- Ihs Manufacturer
- Part Life Cycle Code
- Reach Compliance Code
- Memory IC Type
- ECCN Code
- HTS Code
- Package Description
- JESD-30 Code
- Memory Density
- Memory Width
- Number of Terminals
- Number of Words
Attribute column
Manufacturer
Taiwan Semiconductor Memory - Modules
Product | Inventory | Pricing(USD) | Quantity | Datasheet | RoHS | Surface Mount | Number of Terminals | Access Time-Max | Clock Frequency-Max (fCLK) | Date Of Intro | Ihs Manufacturer | Moisture Sensitivity Levels | Number of Words | Number of Words Code | Operating Temperature-Max | Operating Temperature-Min | Package Body Material | Package Code | Package Description | Package Equivalence Code | Package Shape | Package Style | Part Life Cycle Code | Rohs Code | Supply Voltage-Nom (Vsup) | ECCN Code | Type | Additional Feature | HTS Code | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Terminal Pitch | Reach Compliance Code | Time@Peak Reflow Temperature-Max (s) | JESD-30 Code | Qualification Status | Supply Voltage-Max (Vsup) | Temperature Grade | Supply Voltage-Min (Vsup) | Operating Mode | Supply Current-Max | Organization | Output Characteristics | Seated Height-Max | Memory Width | Standby Current-Max | Memory Density | Parallel/Serial | Memory IC Type | Programming Voltage | Serial Bus Type | Endurance | Write Cycle Time-Max (tWC) | Data Retention Time-Min | Write Protection | Alternate Memory Width | Data Polling | Toggle Bit | Command User Interface | Number of Sectors/Size | Sector Size | Ready/Busy | Boot Block | Common Flash Interface | Length | Width |
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 EN25S32-104RIP Elite Semiconductor Memory Technology Inc | In Stock | - | Datasheet | YES | 8 | - | 104 MHz | - | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC | - | 4194304 words | 4000000 | 85 °C | -40 °C | PLASTIC/EPOXY | VSOP | VSOP, | - | SQUARE | SMALL OUTLINE, VERY THIN PROFILE | Contact Manufacturer | - | 1.8 V | EAR99 | - | - | 8542.32.00.51 | DUAL | GULL WING | - | 1 | 1.27 mm | unknown | - | S-PDSO-G8 | - | 1.95 V | INDUSTRIAL | 1.65 V | SYNCHRONOUS | - | 4MX8 | - | 1 mm | 8 | - | 33554432 bit | SERIAL | FLASH | 1.8 V | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 5.28 mm | 5.28 mm | ||
EN25F10A-104RBIP Elite Semiconductor Memory Technology Inc | In Stock | - | Datasheet | YES | 8 | - | 104 MHz | - | ELITE SEMICONDUCTOR MICROELECTRONICS TECHNOLOGYINC | - | 131072 words | 128000 | 85 °C | -40 °C | PLASTIC/EPOXY | VSOP | VSOP, SOP8,.25 | SOP8,.25 | RECTANGULAR | SMALL OUTLINE, VERY THIN PROFILE | Contact Manufacturer | Yes | 3 V | EAR99 | NOR TYPE | - | 8542.32.00.51 | DUAL | GULL WING | NOT SPECIFIED | 1 | 1.27 mm | unknown | NOT SPECIFIED | R-PDSO-G8 | - | 3.6 V | INDUSTRIAL | 2.7 V | SYNCHRONOUS | 0.028 mA | 128KX8 | 3-STATE | 0.9 mm | 8 | 0.00002 A | 1048576 bit | SERIAL | FLASH | 2.7 V | SPI | 100000 Write/Erase Cycles | - | 20 | HARDWARE/SOFTWARE | 1 | - | - | - | - | - | - | - | - | 4.9 mm | 3.9 mm | ||
EN29GL064AT-70TIP Elite Semiconductor Memory Technology Inc | In Stock | - | Datasheet | YES | 48 | 70 ns | - | - | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC | - | 4194304 words | 4000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSOP1 | TSOP1, | - | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | - | 3 V | EAR99 | - | - | 8542.32.00.51 | DUAL | GULL WING | - | 1 | 0.5 mm | unknown | - | R-PDSO-G48 | - | 3.6 V | INDUSTRIAL | 2.7 V | ASYNCHRONOUS | - | 4MX16 | - | 1.2 mm | 16 | - | 67108864 bit | PARALLEL | FLASH | 3 V | - | - | - | - | - | 8 | - | - | - | - | - | - | - | - | 18.4 mm | 12 mm | ||
EN27SN1G08-45CEIP Elite Semiconductor Memory Technology Inc | In Stock | - | Datasheet | YES | 63 | - | - | - | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC | - | 134217728 words | 128000000 | 85 °C | -40 °C | PLASTIC/EPOXY | VFBGA | VFBGA, | - | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | Contact Manufacturer | - | 1.8 V | EAR99 | - | - | 8542.32.00.51 | BOTTOM | BALL | - | 1 | 0.8 mm | unknown | - | R-PBGA-B63 | - | 1.95 V | INDUSTRIAL | 1.7 V | ASYNCHRONOUS | - | 128MX8 | - | 1 mm | 8 | - | 1073741824 bit | PARALLEL | FLASH | 1.8 V | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 11 mm | 9 mm | ||
F49B002UA-70N Elite Semiconductor Memory Technology Inc | In Stock | - | Datasheet | YES | 32 | 70 ns | - | - | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC | - | 262144 words | 256000 | 70 °C | - | PLASTIC/EPOXY | QCCJ | QCCJ, LDCC32,.5X.6 | LDCC32,.5X.6 | RECTANGULAR | CHIP CARRIER | Obsolete | - | 5 V | EAR99 | NOR TYPE | - | 8542.32.00.51 | QUAD | J BEND | - | 1 | 1.27 mm | unknown | - | R-PQCC-J32 | Not Qualified | 5.5 V | COMMERCIAL | 4.5 V | ASYNCHRONOUS | 0.03 mA | 256KX8 | - | 3.55 mm | 8 | 0.00005 A | 2097152 bit | PARALLEL | FLASH | 5 V | - | - | - | - | - | - | YES | YES | YES | 1,2,1,1 | 16K,8K,96K,128K | - | TOP | - | 13.97 mm | 11.43 mm | ||
ES29LV400DB-70TC Excel (Suzhou) Semiconductor Co Ltd | In Stock | - | Datasheet | YES | 48 | 70 ns | - | - | EXCEL SEMICONDUCTOR INC | 3 | 262144 words | 256000 | 70 °C | - | PLASTIC/EPOXY | TSSOP | TSSOP, TSSOP48,.8,20 | TSSOP48,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | Obsolete | No | - | EAR99 | NOR TYPE | - | 8542.32.00.51 | DUAL | GULL WING | 240 | - | 0.5 mm | unknown | - | R-PDSO-G48 | Not Qualified | - | COMMERCIAL | - | - | 0.03 mA | 256KX16 | - | - | 16 | 0.00001 A | 4194304 bit | PARALLEL | FLASH | - | - | 100000 Write/Erase Cycles | - | - | - | 8 | YES | YES | YES | 1,2,1,7 | 16K,8K,32K,64K | YES | BOTTOM | - | - | - | ||
EN29GL064AT-70BIP Elite Semiconductor Memory Technology Inc | In Stock | - | Datasheet | YES | 48 | 70 ns | - | - | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC | - | 4194304 words | 4000000 | 85 °C | -40 °C | PLASTIC/EPOXY | LFBGA | LFBGA, | - | RECTANGULAR | GRID ARRAY, LOW PROFILE, FINE PITCH | Contact Manufacturer | - | 3 V | EAR99 | - | - | 8542.32.00.51 | BOTTOM | BALL | - | 1 | 0.8 mm | unknown | - | R-PBGA-B48 | - | 3.6 V | INDUSTRIAL | 2.7 V | ASYNCHRONOUS | - | 4MX16 | - | 1.3 mm | 16 | - | 67108864 bit | PARALLEL | FLASH | 3 V | - | - | - | - | - | 8 | - | - | - | - | - | - | - | - | 8 mm | 6 mm | ||
ES29LV800DT-70WGI Excel (Suzhou) Semiconductor Co Ltd | In Stock | - | Datasheet | YES | 48 | 70 ns | - | - | EXCEL SEMICONDUCTOR INC | 3 | 524288 words | 512000 | 85 °C | -40 °C | PLASTIC/EPOXY | FBGA | FBGA, BGA48,6X8,32 | BGA48,6X8,32 | RECTANGULAR | GRID ARRAY, FINE PITCH | Obsolete | Yes | - | EAR99 | NOR TYPE | - | 8542.32.00.51 | BOTTOM | BALL | 260 | - | 0.8 mm | unknown | - | R-PBGA-B48 | Not Qualified | - | INDUSTRIAL | - | - | 0.03 mA | 512KX16 | - | - | 16 | 0.00001 A | 8388608 bit | PARALLEL | FLASH | - | - | 100000 Write/Erase Cycles | - | - | - | 8 | YES | YES | YES | 1,2,1,15 | 16K,8K,32K,64K | YES | TOP | - | - | - | ||
EN25S80B-104WIP2S Elite Semiconductor Memory Technology Inc | In Stock | - | Datasheet | YES | 8 | - | 104 MHz | 2017-07-31 | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC | - | 1048576 words | 1000000 | 85 °C | -40 °C | PLASTIC/EPOXY | HVSON | VDFN-8 | SOLCC8,.25 | RECTANGULAR | SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE | Contact Manufacturer | - | 1.8 V | EAR99 | NOR TYPE | - | 8542.32.00.51 | DUAL | NO LEAD | NOT SPECIFIED | 1 | 1.27 mm | unknown | NOT SPECIFIED | R-PDSO-N8 | - | 1.95 V | INDUSTRIAL | 1.65 V | SYNCHRONOUS | 0.0095 mA | 1MX8 | 3-STATE | 0.8 mm | 8 | 0.00001 A | 8388608 bit | SERIAL | FLASH | 1.8 V | QSPI | 100000 Write/Erase Cycles | - | 20 | HARDWARE/SOFTWARE | - | - | - | - | - | - | - | - | - | 6 mm | 5 mm | ||
EN25S20A-104WIP2SF Elite Semiconductor Memory Technology Inc | In Stock | - | Datasheet | YES | 8 | - | 104 MHz | - | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC | - | 262144 words | 256000 | 85 °C | -40 °C | PLASTIC/EPOXY | HVSON | VDFN-8 | SOLCC8,.25 | RECTANGULAR | SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE | Contact Manufacturer | Yes | 1.8 V | EAR99 | NOR TYPE | - | 8542.32.00.51 | DUAL | NO LEAD | NOT SPECIFIED | 1 | 1.27 mm | unknown | NOT SPECIFIED | R-PDSO-N8 | - | 1.95 V | INDUSTRIAL | 1.65 V | SYNCHRONOUS | 0.02 mA | 256KX8 | 3-STATE | 0.8 mm | 8 | 0.00001 A | 2097152 bit | SERIAL | FLASH | 1.8 V | SPI | 100000 Write/Erase Cycles | - | 20 | HARDWARE/SOFTWARE | 1 | - | - | - | - | - | - | - | - | 6 mm | 5 mm | ||
EN29F002ANT-70PCP Elite Semiconductor Memory Technology Inc | In Stock | - | Datasheet | - | - | - | - | - | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC | - | - | - | - | - | - | - | , | - | - | - | Contact Manufacturer | - | - | EAR99 | - | - | 8542.32.00.51 | - | - | - | - | - | unknown | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
EN39SL160AH-70BIP Elite Semiconductor Memory Technology Inc | In Stock | - | Datasheet | YES | 48 | 70 ns | - | - | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC | - | 1048576 words | 1000000 | 85 °C | -40 °C | PLASTIC/EPOXY | VFBGA | TFBGA-48 | - | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | Contact Manufacturer | - | 1.8 V | EAR99 | NOR TYPE | HIGHEST ADDRESS SECTOR PROTECTED | 8542.32.00.51 | BOTTOM | BALL | - | 1 | 0.5 mm | unknown | - | R-PBGA-B48 | - | 1.95 V | INDUSTRIAL | 1.65 V | ASYNCHRONOUS | - | 1MX16 | - | 0.73 mm | 16 | - | 16777216 bit | PARALLEL | FLASH | 1.8 V | - | - | - | - | - | 8 | - | - | - | - | - | - | BOTTOM/TOP | - | 6 mm | 4 mm | ||
EN25F20A-104RBIP Elite Semiconductor Memory Technology Inc | In Stock | - | Datasheet | YES | 8 | - | 104 MHz | - | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC | - | 262144 words | 256000 | 85 °C | -40 °C | PLASTIC/EPOXY | VSOP | VSOP-8 | - | RECTANGULAR | SMALL OUTLINE, VERY THIN PROFILE | Active | - | 3 V | EAR99 | NOR TYPE | - | 8542.32.00.51 | DUAL | GULL WING | - | 1 | 1.27 mm | unknown | - | R-PDSO-G8 | - | 3.6 V | INDUSTRIAL | 2.7 V | SYNCHRONOUS | - | 256KX8 | - | 0.9 mm | 8 | - | 2097152 bit | SERIAL | FLASH | 2.7 V | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 4.9 mm | 3.9 mm | ||
EN25QH128A-104HIP Elite Semiconductor Memory Technology Inc | In Stock | - | Datasheet | YES | 8 | - | 104 MHz | - | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC | - | 16777216 words | 16000000 | 85 °C | -40 °C | PLASTIC/EPOXY | SOP | SOP, | - | SQUARE | SMALL OUTLINE | Contact Manufacturer | Yes | 3 V | EAR99 | NOR TYPE | - | 8542.32.00.51 | DUAL | GULL WING | NOT SPECIFIED | 1 | 1.27 mm | unknown | NOT SPECIFIED | S-PDSO-G8 | - | 3.6 V | INDUSTRIAL | 2.7 V | SYNCHRONOUS | - | 16MX8 | - | 2.2 mm | 8 | - | 134217728 bit | SERIAL | FLASH | 2.7 V | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 5.275 mm | 5.275 mm | ||
EN25T16A-75QIP Elite Semiconductor Memory Technology Inc | In Stock | - | Datasheet | NO | 8 | - | 75 MHz | - | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC | - | 2097152 words | 2000000 | 85 °C | -40 °C | PLASTIC/EPOXY | DIP | DIP, | - | RECTANGULAR | IN-LINE | Contact Manufacturer | - | 3 V | EAR99 | NOR TYPE | - | 8542.32.00.51 | DUAL | THROUGH-HOLE | - | 1 | 2.54 mm | unknown | - | R-PDIP-T8 | - | 3.6 V | INDUSTRIAL | 2.7 V | SYNCHRONOUS | - | 2MX8 | - | 5.334 mm | 8 | - | 16777216 bit | SERIAL | FLASH | 2.7 V | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 9.271 mm | 7.62 mm | ||
EN25QH64A-104HIP Elite Semiconductor Memory Technology Inc | In Stock | - | Datasheet | YES | 8 | - | 104 MHz | - | ELITE SEMICONDUCTOR MICROELECTRONICS TECHNOLOGYINC | - | 8388608 words | 8000000 | 85 °C | -40 °C | PLASTIC/EPOXY | SOP | SOP, SOP8,.3 | SOP8,.3 | SQUARE | SMALL OUTLINE | Active | Yes | 3 V | EAR99 | NOR TYPE | - | 8542.32.00.51 | DUAL | GULL WING | NOT SPECIFIED | 1 | 1.27 mm | unknown | NOT SPECIFIED | S-PDSO-G8 | - | 3.6 V | INDUSTRIAL | 2.7 V | SYNCHRONOUS | 0.035 mA | 8MX8 | 3-STATE | 2.2 mm | 8 | 0.00002 A | 67108864 bit | SERIAL | FLASH | 3 V | SPI | 100000 Write/Erase Cycles | - | 20 | HARDWARE/SOFTWARE | 1 | - | - | - | - | - | - | - | - | 5.275 mm | 5.275 mm | ||
EN25QH16B-104HIP Elite Semiconductor Memory Technology Inc | In Stock | - | Datasheet | YES | 8 | - | 104 MHz | - | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC | - | 2097152 words | 2000000 | 85 °C | -40 °C | PLASTIC/EPOXY | SOP | SOP-8 | - | SQUARE | SMALL OUTLINE | Active | Yes | 3 V | EAR99 | - | - | 8542.32.00.51 | DUAL | GULL WING | NOT SPECIFIED | 1 | 1.27 mm | unknown | NOT SPECIFIED | S-PDSO-G8 | - | 3.6 V | INDUSTRIAL | 2.7 V | SYNCHRONOUS | - | 2MX8 | - | 2.2 mm | 8 | - | 16777216 bit | SERIAL | FLASH | 3 V | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 5.275 mm | 5.275 mm | ||
M29W160ET70N6 SGS Semiconductor Ltd | In Stock | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
EN29LV800DB-70TIP2A Elite Semiconductor Memory Technology Inc | In Stock | - | Datasheet | YES | 48 | 70 ns | - | 2020-09-11 | ELITE SEMICONDUCTOR MICROELECTRONICS TECHNOLOGYINC | - | 524288 words | 512000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSOP1 | , | TSSOP48,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Active | Yes | 3 V | EAR99 | NOR TYPE | - | 8542.32.00.51 | DUAL | GULL WING | - | 1 | 0.5 mm | unknown | - | R-PDSO-G48 | - | 3.6 V | - | 2.7 V | ASYNCHRONOUS | 0.016 mA | 512KX16 | 3-STATE | 1.2 mm | 16 | 0.000005 A | 8388608 bit | PARALLEL | FLASH | 3 V | - | 100000 Write/Erase Cycles | 0.00007 ms | 20 | - | 8 | YES | YES | YES | 1,2,1,15 | 16K,8K,32K,64K | YES | BOTTOM | YES | 18.4 mm | 12 mm | ||
ES29LV800ET-70TGI Excel (Suzhou) Semiconductor Co Ltd | In Stock | - | Datasheet | YES | 48 | 70 ns | - | - | EXCEL SEMICONDUCTOR INC | - | 524288 words | 512000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSSOP | TSSOP, TSSOP48,.8,20 | TSSOP48,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | Obsolete | Yes | - | EAR99 | NOR TYPE | - | 8542.32.00.51 | DUAL | GULL WING | - | - | 0.5 mm | unknown | - | R-PDSO-G48 | Not Qualified | - | INDUSTRIAL | - | - | 0.03 mA | 512KX16 | - | - | 16 | 0.00001 A | 8388608 bit | PARALLEL | FLASH | - | - | 100000 Write/Erase Cycles | - | - | - | 8 | YES | YES | YES | 1,2,1,15 | 16K,8K,32K,64K | YES | TOP | - | - | - |