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  • Reach Compliance Code
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  • Part Life Cycle Code
  • Configuration
  • Number of Elements
  • Polarity/Channel Type
  • Package Description
  • Transistor Element Material
  • Surface Mount
  • Collector Current-Max (IC)
  • DC Current Gain-Min (hFE)
  • Pin Count

Attribute column

Manufacturer

Toshiba Transistors - Bipolar (BJT) - Single

View Mode:
1136 Results

Product

Inventory

Pricing(USD)

Quantity

Datasheet

RoHS

Factory Lead Time

Contact Plating

Mount

Mounting Type

Package / Case

Surface Mount

Number of Pins

Supplier Device Package

Number of Terminals

Transistor Element Material

Brand

Collector- Emitter Voltage VCEO Max

Collector-Emitter Breakdown Voltage

Current-Collector (Ic) (Max)

DC Collector/Base Gain hfe Min

DC Current Gain hFE Max

Emitter- Base Voltage VEBO

Factory Pack QuantityFactory Pack Quantity

Gain Bandwidth Product fT

hFEMin

Ihs Manufacturer

Manufacturer

Manufacturer Part Number

Maximum DC Collector Current

Maximum Operating Temperature

Mfr

Minimum Operating Temperature

Mounting Styles

Number of Elements

Operating Temperature-Max

Package

Package Body Material

Package Description

Package Shape

Package Style

Part Life Cycle Code

Pd - Power Dissipation

Product Status

Reflow Temperature-Max (s)

Risk Rank

RoHS

Rohs Code

Transistor Polarity

Transition Frequency-Nom (fT)

Unit Weight

Operating Temperature

Packaging

Published

Series

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Max Operating Temperature

Min Operating Temperature

Additional Feature

Subcategory

Voltage - Rated DC

Max Power Dissipation

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Reach Compliance Code

Current Rating

Frequency

Time@Peak Reflow Temperature-Max (s)

Base Part Number

JESD-30 Code

Polarity

Configuration

Element Configuration

Power Dissipation

Case Connection

Power - Max

Transistor Application

Gain Bandwidth Product

Polarity/Channel Type

Product Type

Transistor Type

Collector Emitter Voltage (VCEO)

Max Collector Current

DC Current Gain (hFE) (Min) @ Ic, Vce

Current - Collector Cutoff (Max)

Vce Saturation (Max) @ Ib, Ic

Voltage - Collector Emitter Breakdown (Max)

Max Frequency

Transition Frequency

Max Breakdown Voltage

Frequency - Transition

Collector Base Voltage (VCBO)

Power Dissipation-Max (Abs)

Emitter Base Voltage (VEBO)

Collector Current-Max (IC)

DC Current Gain-Min (hFE)

Continuous Collector Current

Collector-Emitter Voltage-Max

VCEsat-Max

Power Dissipation Ambient-Max

Product Category

Height

Length

Width

Radiation Hardening

RoHS Status

Lead Free

2SA1943-O(Q)
2SA1943-O(Q)

Toshiba Semiconductor and Storage

5000

-

Datasheet

12 Weeks

Copper, Silver, Tin

Through Hole

Through Hole

TO-3PL

-

3

-

-

-

-

-

230V

-

-

-

-

-

-

80

-

-

-

-

-

-

-

-

1

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

150°C TJ

Tube

2000

-

-

Active

Not Applicable

-

-

-

-

-

-

-230V

150W

-

-

-

-

-

-15A

30MHz

-

2SA1943

-

-

-

Single

150W

-

-

-

30MHz

-

-

PNP

230V

15A

80 @ 1A 5V

5μA ICBO

3V @ 800mA, 8A

-

-

-

-

-

230V

-

5V

-

-

-

-

-

-

-

26mm

20.5mm

5.2mm

No

RoHS Compliant

Lead Free

2SC5200-O(Q)
2SC5200-O(Q)

Toshiba Semiconductor and Storage

5000

-

-

16 Weeks

Copper, Silver, Tin

Through Hole

Through Hole

TO-3PL

-

3

-

-

-

-

-

230V

-

-

-

-

-

-

80

-

-

-

-

-

-

-

-

1

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

150°C TJ

Tube

2004

-

-

Active

Not Applicable

-

EAR99

-

-

-

-

230V

150W

-

-

-

-

-

15A

30MHz

-

2SC5200

-

-

-

Single

150W

-

-

-

30MHz

NPN

-

NPN

230V

15A

80 @ 1A 5V

5μA ICBO

3V @ 800mA, 8A

-

-

-

-

-

230V

-

5V

-

-

-

-

-

-

-

-

-

-

No

RoHS Compliant

Lead Free

TTC5200(Q)
TTC5200(Q)

Toshiba Semiconductor and Storage

15000

-

-

12 Weeks

-

Through Hole

Through Hole

TO-3PL

-

3

-

-

-

-

-

230V

-

-

-

-

-

-

80

-

-

-

-

-

-

-

-

1

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

150°C TJ

Tray

2009

-

-

Active

1 (Unlimited)

-

-

-

-

-

-

-

150W

-

-

-

-

-

-

30MHz

-

-

-

-

-

Single

150W

-

-

-

30MHz

-

-

NPN

230V

15A

80 @ 1A 5V

5μA ICBO

3V @ 800mA, 8A

-

-

-

-

-

230V

-

5V

-

-

-

-

-

-

-

26mm

20.5mm

5.2mm

No

RoHS Compliant

Lead Free

TTA1943(Q)
TTA1943(Q)

Toshiba Semiconductor and Storage

17000
-

16 Weeks

-

Through Hole

Through Hole

TO-3PL

-

3

-

-

-

-

-

230V

-

-

-

-

-

-

80

-

-

-

-

-

-

-

-

1

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

150°C TJ

Tube

2009

-

-

Active

1 (Unlimited)

-

-

-

-

-

-

-

150W

-

-

-

-

-

-

30MHz

-

-

-

-

-

Single

150W

-

-

-

30MHz

-

-

PNP

230V

15A

80 @ 1A 5V

5μA ICBO

3V @ 800mA, 8A

-

-

-

-

-

230V

-

-5V

-

-

-

-

-

-

-

26mm

20.5mm

5.2mm

No

RoHS Compliant

-

2SA2061(TE85L,F)
2SA2061(TE85L,F)

Toshiba Semiconductor and Storage

3041
-

12 Weeks

-

-

Surface Mount

TO-236-3, SC-59, SOT-23-3

YES

-

TSM

-

-

Toshiba

20 V

-

2.5 A

200

500

7 V

3000

-

-

TOSHIBA CORP

Toshiba

2SA2061(TE85L,F)

2.5 A

+ 150 C

Toshiba Semiconductor and Storage

-

SMD/SMT

-

150 °C

-

-

,

-

-

Active

625 mW

Active

-

5.57

Details

Yes

PNP

-

0.000353 oz

150°C (TJ)

MouseReel

-

-

-

-

-

-

-

-

-

-

Transistors

-

-

-

-

-

-

unknown

-

-

-

-

-

-

Single

-

-

-

625 mW

-

-

PNP

BJTs - Bipolar Transistors

PNP

-

-

200 @ 500mA, 2V

100nA (ICBO)

190mV @ 53mA, 1.6A

20 V

-

-

-

-

20 V

1 W

-

2.5 A

200

- 2.5 A

-

-

-

Bipolar Transistors - BJT

-

-

-

-

-

-

2SC2881-Y(TE12L,ZC
2SC2881-Y(TE12L,ZC

Toshiba Semiconductor and Storage

43000
-

12 Weeks

-

-

Surface Mount

TO-243AA

YES

-

PW-MINI

3

SILICON

Toshiba

120 V

-

800 mA

80

240

5 V

1000

120 MHz

-

TOSHIBA CORP

Toshiba

2SC2881-Y(TE12L,ZC

800 mA

+ 150 C

Toshiba Semiconductor and Storage

-

SMD/SMT

1

150 °C

-

PLASTIC/EPOXY

SMALL OUTLINE, R-PSSO-F3

RECTANGULAR

SMALL OUTLINE

Active

1 W

Active

NOT SPECIFIED

5.36

Non-Compliant

Yes

NPN

120 MHz

0.001764 oz

150°C (TJ)

MouseReel

-

-

-

-

-

-

-

-

-

-

Transistors

-

-

-

SINGLE

FLAT

NOT SPECIFIED

unknown

-

-

-

-

R-PSSO-F3

-

Single

-

1

COLLECTOR

500 mW

AMPLIFIER

-

NPN

BJTs - Bipolar Transistors

NPN

-

-

120 @ 100mA, 5V

100nA (ICBO)

1V @ 50mA, 500mA

120 V

-

120

-

120MHz

120 V

-

-

0.8 A

120

800

120 V

-

-

Bipolar Transistors - BJT

-

-

-

-

-

-

2SC3324-BL(TE85L,F
2SC3324-BL(TE85L,F

Toshiba Semiconductor and Storage

125600

-

-

12 Weeks

-

Surface Mount

Surface Mount

TO-236-3, SC-59, SOT-23-3

-

3

-

-

-

-

-

120V

-

-

-

-

-

-

200

-

-

-

-

-

-

-

-

1

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

125°C TJ

Cut Tape (CT)

2009

-

-

Discontinued

1 (Unlimited)

-

-

-

-

-

-

-

150mW

-

-

-

-

-

-

100MHz

-

-

-

-

-

Single

150mW

-

-

-

100MHz

-

-

NPN

300mV

100mA

350 @ 2mA 6V

100nA ICBO

300mV @ 1mA, 10mA

-

-

-

120V

-

120V

-

5V

-

-

-

-

-

-

-

-

-

-

No

RoHS Compliant

-

2SC2655-Y(TE6,F,M)
2SC2655-Y(TE6,F,M)

Toshiba Semiconductor and Storage

24000

-

Datasheet

-

-

Through Hole

Through Hole

TO-226-3, TO-92-3 Long Body

-

3

TO-92MOD

-

-

-

-

-

2A

-

-

-

-

-

70

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

150°C TJ

Bulk

2006

-

-

Obsolete

1 (Unlimited)

-

-

150°C

-55°C

-

-

-

900mW

-

-

-

-

-

-

-

-

-

-

NPN

-

Single

-

-

900mW

-

100MHz

-

-

NPN

50V

2A

70 @ 500mA 2V

1μA ICBO

500mV @ 50mA, 1A

50V

-

-

-

100MHz

50V

-

5V

-

-

-

-

-

-

-

-

-

-

No

RoHS Compliant

-

2SA1832-Y,LF
2SA1832-Y,LF

Toshiba Semiconductor and Storage

2561
-

16 Weeks

Silver, Tin

Surface Mount

Surface Mount

SC-75, SOT-416

-

-

-

-

-

-

-

50V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

125°C TJ

Cut Tape (CT)

2007

-

yes

Discontinued

1 (Unlimited)

-

-

-

-

-

-

-

100mW

-

-

-

-

unknown

-

-

-

-

-

-

-

-

-

-

100mW

-

-

-

-

PNP

300mV

150mA

120 @ 2mA 6V

100nA ICBO

300mV @ 10mA, 100mA

-

-

-

50V

80MHz

50V

-

5V

-

-

-

-

-

-

-

-

-

-

-

RoHS Compliant

-

2SA2142(TE16L1,NQ)
2SA2142(TE16L1,NQ)

Toshiba Semiconductor and Storage

31979
-

18 Weeks

-

-

Surface Mount

TO-252-3, DPak (2 Leads + Tab), SC-63

YES

-

PW-MOLD

2

SILICON

Toshiba

-

-

500 mA

-

-

-

2000

-

-

TOSHIBA CORP

Toshiba

2SA2142(TE16L1,NQ)

-

-

Toshiba Semiconductor and Storage

-

-

1

150 °C

Tape & Reel (TR)

PLASTIC/EPOXY

SMALL OUTLINE, R-PSSO-G2

RECTANGULAR

SMALL OUTLINE

Active

-

Active

-

1.57

Details

-

PNP

35 MHz

-

150°C (TJ)

Reel

-

-

-

-

-

-

-

-

-

-

Transistors

-

-

Si

SINGLE

GULL WING

-

unknown

-

-

-

-

R-PSSO-G2

-

SINGLE

-

15

COLLECTOR

1 W

SWITCHING

-

PNP

BJTs - Bipolar Transistors

PNP

-

-

100 @ 50mA, 5V

10μA (ICBO)

1V @ 10mA, 100mA

600 V

-

35

-

35MHz

-

15 W

-

0.5 A

100

500

600 V

1 V

1 W

Bipolar Transistors - BJT

-

-

-

-

-

-

2SC5712(TE12L,F)
2SC5712(TE12L,F)

Toshiba Semiconductor and Storage

25000

-

-

-

-

Surface Mount

Surface Mount

TO-243AA

-

4

-

-

-

-

-

50V

-

-

-

-

-

-

400

-

-

-

-

-

-

-

-

1

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

150°C TJ

Tape & Reel (TR)

2013

-

-

Active

1 (Unlimited)

-

-

-

-

-

-

-

1W

-

-

-

-

-

-

-

-

-

-

-

-

-

1W

-

-

-

-

-

-

NPN

50V

3A

400 @ 300mA 2V

100nA ICBO

140mV @ 20mA, 1A

-

-

-

-

-

100V

-

7V

-

-

-

-

-

-

-

-

-

-

-

RoHS Compliant

-

2SC2712-Y,LF
2SC2712-Y,LF

Toshiba Semiconductor and Storage

3000
-

12 Weeks

-

Surface Mount

Surface Mount

TO-236-3, SC-59, SOT-23-3

-

-

-

-

SILICON

-

-

50V

-

-

-

-

-

-

70

-

-

-

-

-

-

-

-

1

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

125°C TJ

Tape & Reel (TR)

2011

-

-

Active

1 (Unlimited)

3

-

-

-

LOW NOISE

-

-

150mW

-

DUAL

GULL WING

NOT SPECIFIED

unknown

-

-

NOT SPECIFIED

2SC2712

R-PDSO-G3

-

-

Single

-

-

-

AMPLIFIER

80MHz

NPN

-

NPN

50V

150mA

120 @ 2mA 6V

100nA ICBO

250mV @ 10mA, 100mA

-

-

80MHz

50V

-

60V

-

5V

-

-

150mA

-

-

-

-

-

-

-

-

RoHS Compliant

-

2SA1837(F,M)
2SA1837(F,M)

Toshiba Semiconductor and Storage

200

-

Datasheet

-

Copper, Silver, Tin

Through Hole

Through Hole

TO-220-3 Full Pack

-

3

TO-220NIS

-

-

-

-

230V

1A

-

-

-

-

-

100

-

-

-

-

-

-

-

-

1

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

150°C TJ

Bulk

2007

-

-

Obsolete

1 (Unlimited)

-

-

150°C

-55°C

-

-

-230V

2W

-

-

-

-

-

-1A

70MHz

-

2SA1837

-

PNP

-

Single

2W

-

2W

-

70MHz

-

-

PNP

230V

1A

100 @ 100mA 5V

1μA ICBO

1.5V @ 50mA, 500mA

230V

70MHz

-

-

70MHz

230V

-

5V

-

-

-

-

-

-

-

-

-

-

No

RoHS Compliant

Lead Free

2SA1201-Y(TE12L,ZC
2SA1201-Y(TE12L,ZC

Toshiba Semiconductor and Storage

64897

-

-

-

-

-

Surface Mount

TO-243AA

-

-

PW-MINI

-

-

Toshiba

120 V

-

800 mA

80

240

5 V

1000

120 MHz

-

TOSHIBA CORP

Toshiba

2SA1201-Y(TE12L,ZC

800 mA

+ 150 C

Toshiba Semiconductor and Storage

-

SMD/SMT

-

-

-

-

,

-

-

Active

1 W

Active

-

5.16

Details

-

PNP

-

0.001764 oz

150°C (TJ)

MouseReel

-

-

-

-

-

-

EAR99

-

-

-

Transistors

-

-

Si

-

-

-

unknown

-

-

-

-

-

-

Single

-

1

-

500 mW

-

-

-

BJTs - Bipolar Transistors

PNP

-

-

80 @ 100mA, 5V

100nA (ICBO)

1V @ 50mA, 500mA

120 V

-

120

-

120MHz

120 V

-

-

-

-

800

-

-

-

Bipolar Transistors - BJT

-

-

-

-

-

-

2SA1298-Y,LF
2SA1298-Y,LF

Toshiba Semiconductor and Storage

1808
-

12 Weeks

-

Surface Mount

Surface Mount

TO-236-3, SC-59, SOT-23-3

-

-

-

-

-

-

-

25V

-

-

-

-

-

-

40

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

150°C TJ

Tape & Reel (TR)

2014

-

yes

Active

1 (Unlimited)

-

-

-

-

-

-

-

200mW

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

200mW

-

120MHz

-

-

PNP

400mV

800mA

160 @ 100mA 1V

100nA ICBO

400mV @ 20mA, 500mA

-

-

-

25V

-

-30V

-

-5V

-

-

-800mA

-

-

-

-

-

-

-

-

RoHS Compliant

-

2SA1587-GR,LF
2SA1587-GR,LF

Toshiba Semiconductor and Storage

3752
-

12 Weeks

Silver, Tin

Surface Mount

Surface Mount

SC-70, SOT-323

-

3

-

-

-

-

-

120V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

125°C TJ

Cut Tape (CT)

2014

-

yes

Active

1 (Unlimited)

-

-

-

-

-

-

-

100mW

-

-

-

-

unknown

-

-

-

-

-

-

-

-

-

-

100mW

-

-

-

-

PNP

300mV

100mA

200 @ 2mA 6V

100nA ICBO

300mV @ 1mA, 10mA

-

-

-

120V

100MHz

120V

-

5V

-

-

-

-

-

-

-

-

-

-

-

RoHS Compliant

-

2SC5359-O(Q)
2SC5359-O(Q)

Toshiba Semiconductor and Storage

1016

-

Datasheet

14 Weeks

-

Through Hole

Through Hole

TO-3PL

-

3

-

-

-

-

-

230V

-

-

-

-

-

-

80

-

-

-

-

-

-

-

-

1

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

150°C TJ

Bulk

2007

-

-

Active

Not Applicable

-

EAR99

-

-

-

-

-

180W

-

-

-

-

-

-

30MHz

-

-

-

-

-

Single

180W

-

-

-

30MHz

NPN

-

NPN

230V

15A

80 @ 1A 5V

5μA ICBO

3V @ 800mA, 8A

-

-

-

-

-

230V

-

5V

-

-

-

-

-

-

-

26mm

20.5mm

5.2mm

No

RoHS Compliant

Lead Free

TTC011B,Q
TTC011B,Q

Toshiba Semiconductor and Storage

455
-

-

-

-

Through Hole

TO-225AA, TO-126-3

-

-

TO-126N

-

-

Toshiba

230 V

-

1 A

100

320

5 V

250

100 MHz

-

-

Toshiba

-

2 A

+ 150 C

Toshiba Semiconductor and Storage

-

Through Hole

-

-

Tray

-

-

-

-

-

1.5 W

Active

-

-

Details

-

NPN

-

0.029630 oz

150°C (TJ)

Tray

-

-

-

-

-

-

-

-

-

-

Transistors

-

-

Si

-

-

-

-

-

-

-

-

-

-

Single

-

-

-

1.5 W

-

-

-

BJTs - Bipolar Transistors

NPN

-

-

100 @ 100mA, 5V

200nA (ICBO)

1.5V @ 50mA, 500mA

230 V

-

-

-

100MHz

230 V

-

-

-

-

1 A

-

-

-

Bipolar Transistors - BJT

-

-

-

-

-

-

TTA006B,Q
TTA006B,Q

Toshiba Semiconductor and Storage

11000
-

-

-

-

Through Hole

TO-225AA, TO-126-3

-

-

TO-126N

-

-

Toshiba

230 V

-

1 A

100

320

5 V

250

70 MHz

-

-

Toshiba

-

2 A

+ 150 C

Toshiba Semiconductor and Storage

-

Through Hole

-

-

Tray

-

-

-

-

-

1.5 W

Active

-

-

Details

-

PNP

-

0.029630 oz

150°C (TJ)

Tray

-

-

-

-

-

-

-

-

-

-

Transistors

-

-

Si

-

-

-

-

-

-

-

-

-

-

Single

-

-

-

1.5 W

-

-

-

BJTs - Bipolar Transistors

PNP

-

-

100 @ 100mA, 5V

200nA (ICBO)

1.5V @ 50mA, 500mA

230 V

-

-

-

70MHz

230 V

-

-

-

-

- 1 A

-

-

-

Bipolar Transistors - BJT

-

-

-

-

-

-

2SC4793(F,M)
2SC4793(F,M)

Toshiba Semiconductor and Storage

30000

-

Datasheet

-

Copper, Silver, Tin

Through Hole

Through Hole

TO-220-3 Full Pack

-

3

TO-220NIS

-

-

-

-

230V

1A

-

-

-

-

-

100

-

-

-

-

-

-

-

-

1

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

150°C TJ

Tube

2004

-

-

Obsolete

1 (Unlimited)

-

-

150°C

-55°C

-

-

230V

2W

-

-

-

-

-

1A

100MHz

-

-

-

NPN

-

Single

2W

-

2W

-

100MHz

-

-

NPN

230V

1A

100 @ 100mA 5V

1μA ICBO

1.5V @ 50mA, 500mA

230V

100MHz

-

-

100MHz

230V

-

5V

-

-

1A

-

-

-

-

-

-

-

No

RoHS Compliant

Lead Free