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  • Voltage - Test
  • Gain
  • Configuration

Attribute column

Manufacturer

Toshiba Transistors - FETs, MOSFETs - RF

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34 Results

Product

Inventory

Pricing(USD)

Quantity

Datasheet

RoHS

Factory Lead Time

Contact Plating

Mount

Package / Case

Surface Mount

Number of Pins

Supplier Device Package

Material

Number of Terminals

Transistor Element Material

Automotive

Channel Mode

Drain Current-Max (ID)

ECCN (US)

EU RoHS

Factory Pack QuantityFactory Pack Quantity

Id - Continuous Drain Current

Ihs Manufacturer

Manufacturer

Manufacturer Part Number

Maximum Continuous Drain Current (A)

Maximum Drain Source Voltage (V)

Maximum Gate Source Leakage Current (nA)

Maximum Gate Source Voltage (V)

Maximum IDSS (uA)

Maximum Operating Temperature (°C)

Maximum Power Dissipation (mW)

Military

Minimum Operating Temperature (°C)

Mounting

Mounting Styles

Number of Elements

Number of Elements per Chip

Operating Temperature (Max.)

Operating Temperature-Max

Package Body Material

Package Description

Package Height

Package Length

Package Shape

Package Style

Package Width

Part Life Cycle Code

PCB changed

Pd - Power Dissipation

PPAP

Risk Rank

RoHS

Supplier Package

Tab

Transistor Polarity

Typical Drain Efficiency (%)

Typical Forward Transconductance (S)

Typical Input Capacitance @ Vds (pF)

Typical Power Gain (dB)

Typical Reverse Transfer Capacitance @ Vds (pF)

Usage Level

Vds - Drain-Source Breakdown Voltage

Vgs - Gate-Source Voltage

Vgs th - Gate-Source Threshold Voltage

Voltage Rated

Packaging

Published

Series

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Type

Terminal Finish

Max Operating Temperature

Min Operating Temperature

HTS Code

Subcategory

Current Rating (Amps)

Max Power Dissipation

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Reach Compliance Code

Current Rating

Frequency

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Qualification Status

Operating Frequency

Configuration

Element Configuration

Operating Mode

Output Power

Current - Test

Transistor Application

Drain to Source Voltage (Vdss)

Polarity/Channel Type

Transistor Type

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Gain

Max Output Power

Drain Current-Max (Abs) (ID)

DS Breakdown Voltage-Min

Channel Type

Power - Output

FET Technology

Power Dissipation-Max (Abs)

Noise Figure

Voltage - Test

Feedback Cap-Max (Crss)

Highest Frequency Band

Height

Length

Width

Radiation Hardening

RoHS Status

RFM04U6P(TE12L,F)
RFM04U6P(TE12L,F)

Toshiba Semiconductor and Storage

374
-

18 Weeks

-

-

TO-243AA

YES

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

150°C

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Automotive grade

-

-

-

-

Cut Tape (CT)

2003

-

-

Discontinued

1 (Unlimited)

-

EAR99

-

-

-

-

-

-

-

7W

-

-

-

unknown

2A

470MHz

-

-

-

-

-

Single

-

ENHANCEMENT MODE

-

500mA

-

16V

-

N-Channel

2A

3V

13.3dB

-

2A

-

-

4.3W

METAL-OXIDE SEMICONDUCTOR

-

-

6V

-

-

-

-

-

-

RoHS Compliant

2SK3475TE12LF
2SK3475TE12LF

Toshiba Semiconductor and Storage

10090
-

-

-

-

TO-243AA

-

-

SC-62

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

20V

Cut Tape (CT)

2007

-

-

Discontinued

1 (Unlimited)

-

-

-

-

-

-

-

-

1A

-

-

-

-

-

-

520MHz

-

-

-

-

-

-

-

-

-

50mA

-

-

-

N-Channel

-

-

14.9dB

-

-

-

-

630mW

-

-

-

7.2V

-

-

-

-

-

-

RoHS Compliant

3SK291(TE85L,F)
3SK291(TE85L,F)

Toshiba Semiconductor and Storage

In Stock

-

-

52 Weeks

-

-

SC-61AA

YES

4

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

125°C

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Cut Tape (CT)

2009

-

-

Active

1 (Unlimited)

-

-

-

-

-

-

-

-

-

150mW

-

-

-

-

30mA

800MHz

-

-

-

-

-

Single

-

-

-

10mA

-

12.5V

-

N-Channel Dual Gate

30mA

-

22.5dB

-

0.03A

-

-

-

METAL-OXIDE SEMICONDUCTOR

-

2.5dB

6V

-

-

-

-

-

-

RoHS Compliant

In Stock

-

-

-

-

-

SOT-343-4

-

-

-

-

-

-

-

-

-

-

-

3000

100 mA

-

-

-

-

-

-

-

-

-

-

-

-

-

SMD/SMT

-

-

-

-

-

-

-

-

-

-

-

-

-

250 mW

-

-

Details

-

-

N-Channel

-

-

-

-

-

-

20 V

10 V

1.3 V

-

Reel

-

RFM00

-

-

-

-

-

RF Power MOSFET

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

520 MHz

Dual

-

-

200 mW

-

-

-

-

-

-

-

13 dB

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

In Stock

-

-

-

-

-

-

-

-

-

Si

-

-

No

Enhancement

-

EAR99

Compliant

-

-

-

-

-

1

10

-

±6

-

150

500

-

-55

Surface Mount

-

-

1

-

-

-

-

1.6(Max)

4.6(Max)

-

-

2.5

-

3

-

No

-

-

PW-Mini

Tab

-

55(Min)

-

-

-

-

-

-

-

-

-

Tape and Reel

-

-

-

Obsolete

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

4

-

-

-

Single Dual Source

-

-

-

-

-

-

-

-

-

-

-

-

-

-

N

-

-

-

-

-

-

-

-

-

-

-

-

2SK3078A(TE12L,F)
2SK3078A(TE12L,F)

Toshiba Semiconductor and Storage

300000

-

-

-

-

Surface Mount

TO-243AA

-

3

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

1

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Automotive grade

-

-

-

-

Cut Tape (CT)

2007

-

-

Discontinued

1 (Unlimited)

-

EAR99

-

-

150°C

-45°C

-

-

-

3W

-

-

-

unknown

500mA

470MHz

-

-

-

-

-

-

-

-

-

50mA

-

10V

-

N-Channel

500mA

5V

8dB

-

-

-

-

28dbm

-

-

-

4.5V

-

-

-

-

-

-

RoHS Compliant

3SK294(TE85L,F)
3SK294(TE85L,F)

Toshiba Semiconductor and Storage

120000
-

52 Weeks

-

Surface Mount

SC-82A, SOT-343

-

4

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

1

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Military grade

-

-

-

-

Tape & Reel (TR)

2003

-

-

Active

1 (Unlimited)

-

-

-

-

125°C

-55°C

-

-

-

100mW

-

-

-

-

30mA

500MHz

-

-

-

-

-

-

Single

-

-

10mA

-

12.5V

-

N-Channel

30mA

8V

26dB

-

-

-

-

-

-

-

1.4dB

6V

-

-

-

-

-

-

RoHS Compliant

3SK293(TE85L,F)
3SK293(TE85L,F)

Toshiba Semiconductor and Storage

405000

-

-

52 Weeks

-

Surface Mount

SC-82A, SOT-343

-

4

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Military grade

-

-

-

-

Cut Tape (CT)

2010

-

-

Active

1 (Unlimited)

-

-

-

-

125°C

-55°C

-

-

-

100mW

-

-

-

unknown

30mA

800MHz

-

-

-

-

-

-

-

-

-

10mA

-

12.5V

-

N-Channel Dual Gate

30mA

8V

22dB

-

-

-

-

-

-

-

2.5dB

6V

-

-

-

-

-

-

RoHS Compliant

2SK3075(TE12L,Q)
2SK3075(TE12L,Q)

Toshiba Semiconductor and Storage

817

-

-

-

-

Surface Mount

TO-271AA

-

3

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

1

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Cut Tape (CT)

2009

-

-

Discontinued

1 (Unlimited)

-

-

-

-

150°C

-45°C

-

-

-

20W

-

-

-

unknown

5A

520MHz

-

-

-

-

-

-

-

-

-

50mA

-

30V

-

N-Channel

5A

25V

11.7dB

7.5W

-

-

-

-

-

-

-

9.6V

-

-

-

-

-

-

RoHS Compliant

In Stock

-

Datasheet

-

-

-

-

-

-

-

Si

-

-

-

Depletion

-

EAR99

-

-

-

-

-

-

0.03

15

-

±9

-

125

150

No

-55

Surface Mount

-

-

1

-

-

-

-

1.1

2.9

-

-

1.5

-

3

-

-

-

-

2-3J1A

Tab

-

-

-

4.25@6V

25

-

-

-

-

-

-

Tape and Reel

-

-

-

Obsolete

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

4

-

-

-

Single Dual Gate

-

-

-

-

-

-

-

-

-

-

-

-

-

-

N

-

-

-

-

-

-

-

-

-

-

-

RoHS Compliant

RFM01U7P(TE12L,F)
RFM01U7P(TE12L,F)

Toshiba Semiconductor and Storage

3000
-

-

-

-

TO-243AA

YES

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

150°C

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Cut Tape (CT)

2009

-

-

Discontinued

1 (Unlimited)

-

-

-

-

-

-

-

-

-

3W

-

-

-

unknown

1A

520MHz

-

-

-

-

-

Single

-

ENHANCEMENT MODE

-

100mA

-

20V

-

N-Channel

1A

10V

10.8dB

-

1A

-

-

1.2W

METAL-OXIDE SEMICONDUCTOR

-

-

7.2V

-

-

-

-

-

-

RoHS Compliant

2SK3074TE12LF
2SK3074TE12LF

Toshiba Semiconductor and Storage

872
-

-

-

-

TO-243AA

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

30V

Cut Tape (CT)

2014

-

-

Discontinued

1 (Unlimited)

-

-

-

-

-

-

-

-

1A

-

-

-

-

unknown

-

520MHz

-

-

-

-

-

-

-

-

-

50mA

-

-

-

N-Channel

-

-

14.9dB

-

-

-

-

630mW

-

-

-

9.6V

-

-

-

-

-

-

RoHS Compliant

3SK292(TE85R,F)
3SK292(TE85R,F)

Toshiba Semiconductor and Storage

In Stock

-

-

52 Weeks

-

-

SC-61AA

YES

4

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

1

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Tape & Reel (TR)

2014

-

-

Active

1 (Unlimited)

4

-

-

-

125°C

-55°C

-

-

-

150mW

-

GULL WING

NOT SPECIFIED

-

30mA

500MHz

NOT SPECIFIED

-

-

-

-

-

Single

DUAL GATE, DEPLETION MODE

-

10mA

AMPLIFIER

12.5V

-

N-Channel Dual Gate

30mA

8V

26dB

-

0.03A

-

-

-

METAL-OXIDE SEMICONDUCTOR

-

1.4dB

6V

-

-

-

-

-

-

RoHS Compliant

2SK3079ATE12LQ
2SK3079ATE12LQ

Toshiba Semiconductor and Storage

12000

-

-

-

-

-

TO-271AA

-

-

PW-X

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

10V

Cut Tape (CT)

2009

-

-

Discontinued

1 (Unlimited)

-

-

-

-

-

-

-

-

3A

-

-

-

-

-

-

470MHz

-

-

-

-

-

-

-

-

-

50mA

-

-

-

N-Channel

-

-

13.5dB

-

-

-

-

33.5dBmW

-

-

-

4.5V

-

-

-

-

-

-

RoHS Compliant

RFM03U3CT(TE12L)
RFM03U3CT(TE12L)

Toshiba Semiconductor and Storage

90000

-

-

-

-

-

2-SMD, No Lead Exposed Pad

-

-

RF-CST3

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

16V

Cut Tape (CT)

2009

-

-

Discontinued

1 (Unlimited)

-

-

-

-

-

-

-

-

3A

7W

-

-

-

-

3A

520MHz

-

-

-

-

-

-

-

-

-

500mA

-

16V

-

N-Channel

2.5A

3V

14.8dB

-

-

-

-

3W

-

-

-

3.6V

-

-

-

-

-

-

RoHS Compliant

RFM12U7X(TE12L,Q)
RFM12U7X(TE12L,Q)

Toshiba Semiconductor and Storage

4000

-

-

-

-

-

TO-271AA

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Cut Tape (CT)

2009

-

-

Discontinued

1 (Unlimited)

-

-

-

-

-

-

-

-

-

20W

-

-

-

unknown

4A

520MHz

-

-

-

-

-

-

-

-

-

750mA

-

20V

-

N-Channel

4A

10V

10.8dB

-

-

-

-

12W

-

-

-

7.2V

-

-

-

-

-

-

RoHS Compliant

2SK241-GR
2SK241-GR

Toshiba

6000

-

Datasheet

-

-

-

-

NO

-

-

Si

3

SILICON

-

Depletion

0.03 A

EAR99

-

-

-

TOSHIBA CORP

Toshiba America Electronic Components

2SK241-GR

0.03

20

50

±5

14000

125

200

No

-55

Through Hole

-

1

1

-

125 °C

PLASTIC/EPOXY

IN-LINE, R-PSIP-T3

3.2(Max)

4.2(Max)

RECTANGULAR

IN-LINE

2.6(Max)

Obsolete

3

-

-

5.69

-

2-4E1D

-

-

-

0.01

3@10V

28

0.035@10V

-

-

-

-

-

-

-

-

e0

Obsolete

-

-

EAR99

-

TIN LEAD

-

-

8541.21.00.95

FET General Purpose Power

-

-

SINGLE

THROUGH-HOLE

-

unknown

-

-

-

3

R-PSIP-T3

Not Qualified

-

Single

-

DEPLETION MODE

-

-

AMPLIFIER

-

N-CHANNEL

-

-

-

-

-

0.03 A

20 V

N

-

METAL-OXIDE SEMICONDUCTOR

0.2 W

-

-

0.05 pF

VERY HIGH FREQUENCY BAND

-

-

-

-

RoHS non-compliant

2SK209-GR(TE85L,F)
2SK209-GR(TE85L,F)

Toshiba Semiconductor and Storage

732000

-

-

52 Weeks

Copper, Silver, Tin

Surface Mount

TO-236-3, SC-59, SOT-23-3

-

3

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

1

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Cut Tape (CT)

2009

-

-

Active

1 (Unlimited)

3

-

-

-

125°C

-55°C

-

-

-

150mW

DUAL

GULL WING

-

-

-

1kHz

-

-

-

-

-

-

Single

DEPLETION MODE

-

500μA

AMPLIFIER

-

-

N-Channel JFET

6.5mA

-1.5V

-

-

-

-

-

-

JUNCTION

-

1dB

10V

-

-

-

-

-

No

RoHS Compliant

2SK4037(TE12L,Q)
2SK4037(TE12L,Q)

Toshiba Semiconductor and Storage

47
-

-

-

-

SC-70, SOT-323

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Cut Tape (CT)

2009

-

-

Discontinued

1 (Unlimited)

-

-

-

-

-

-

-

-

-

20W

-

-

-

-

3A

470MHz

-

-

-

-

-

-

-

-

-

250mA

-

12V

-

N-Channel

3A

3V

11.5dB

-

-

-

-

36.5dBmW

-

-

-

6V

-

-

-

-

-

-

RoHS Compliant

2SK209-Y(TE85L,F)
2SK209-Y(TE85L,F)

Toshiba Semiconductor and Storage

309000

-

Datasheet

52 Weeks

-

Surface Mount

TO-236-3, SC-59, SOT-23-3

-

3

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Cut Tape (CT)

2009

-

-

Active

1 (Unlimited)

-

-

-

-

125°C

-55°C

-

-

-

150mW

-

-

-

-

-

1kHz

-

-

-

-

-

-

Single

-

-

500μA

-

-

-

N-Channel JFET

3mA

-30V

-

-

-

-

-

-

-

-

1dB

10V

-

-

1.1mm

2.9mm

1.5mm

No

RoHS Compliant