- Configuration
- Ihs Manufacturer
- Part Life Cycle Code
- Reach Compliance Code
- Collector Current-Max (IC)
- Collector-Emitter Voltage-Max
- Polarity/Channel Type
- Number of Elements
- Package Description
- Qualification Status
- Surface Mount
- Transistor Element Material
Attribute column
Manufacturer
Toshiba Transistors - IGBTs - Single
Product | Inventory | Pricing(USD) | Quantity | Datasheet | RoHS | Factory Lead Time | Mount | Mounting Type | Package / Case | Surface Mount | Number of Pins | Supplier Device Package | Number of Terminals | Transistor Element Material | Automotive | Base Product Number | Brand | Collector Current (DC) | Collector- Emitter Voltage VCEO Max | Continuous Collector Current Ic Max | Current-Collector (Ic) (Max) | ECCN (US) | EU RoHS | Factory Pack QuantityFactory Pack Quantity | Gate to Emitter Voltage (Max) | Ihs Manufacturer | Manufacturer | Manufacturer Part Number | Maximum Collector-Emitter Voltage (V) | Maximum Continuous Collector Current (A) | Maximum Gate Emitter Leakage Current (uA) | Maximum Gate Emitter Voltage | Maximum Gate Emitter Voltage (V) | Maximum Operating Temperature | Maximum Operating Temperature (°C) | Maximum Power Dissipation (mW) | Mfr | Minimum Operating Temperature | Minimum Operating Temperature (°C) | Mounting | Mounting Styles | Number of Elements | Operating Temperature (Max.) | Operating Temperature (Min.) | Operating Temperature Classification | Operating Temperature-Max | Package | Package Body Material | Package Description | Package Height | Package Length | Package Shape | Package Style | Package Type | Package Width | Part Life Cycle Code | Part Package Code | PCB changed | Pd - Power Dissipation | PPAP | Product Status | Rad Hardened | Risk Rank | RoHS | Rohs Code | Supplier Package | Tab | Test Conditions | Turn-off Time-Nom (toff) | Turn-on Time-Nom (ton) | Typical Collector Emitter Saturation Voltage (V) | Unit Weight | Operating Temperature | Packaging | Series | Part Status | ECCN Code | Max Operating Temperature | Min Operating Temperature | Additional Feature | HTS Code | Subcategory | Technology | Terminal Position | Terminal Form | Reach Compliance Code | Pin Count | JESD-30 Code | Qualification Status | Configuration | Element Configuration | Power Dissipation | Case Connection | Input Type | Power - Max | Transistor Application | Polarity/Channel Type | Product Type | Collector Emitter Voltage (VCEO) | Max Collector Current | Voltage - Collector Emitter Breakdown (Max) | Channel Type | Power Dissipation-Max (Abs) | Vce(on) (Max) @ Vge, Ic | Collector Current-Max (IC) | Continuous Collector Current | IGBT Type | Collector-Emitter Voltage-Max | Gate Charge | Current - Collector Pulsed (Icm) | Td (on/off) @ 25°C | Switching Energy | Gate-Emitter Voltage-Max | VCEsat-Max | Gate-Emitter Thr Voltage-Max | Reverse Recovery Time (trr) | Power Dissipation Ambient-Max | Fall Time-Max (tf) | Product Category | Lead Free |
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 GT50J341,Q Toshiba Semiconductor and Storage | 32 |
| - | 12 Weeks | - | Through Hole | TO-3P-3, SC-65-3 | - | - | TO-3P(N) | - | - | - | - | Toshiba | - | 600 V | 100 A | 50 A | - | - | 50 | - | TOSHIBA CORP | Toshiba | GT50J341,Q | - | - | - | - 25 V, + 25 V | - | + 175 C | - | - | Toshiba Semiconductor and Storage | - 55 C | - | - | Through Hole | - | - | - | - | - | Tube | - | , | - | - | - | - | - | - | Active | - | - | 200 W | - | Active | - | 5.67 | Details | - | - | - | - | - | - | - | - | 175°C (TJ) | Tube | - | - | - | - | - | - | - | IGBTs | Si | - | - | unknown | - | - | - | Single | - | - | - | Standard | 200 W | - | - | IGBT Transistors | - | - | 600 V | - | - | 2.2V @ 15V, 50A | - | - | - | - | - | 100 A | - | - | - | - | - | - | - | - | IGBT Transistors | - | ||
GT20J341,S4X(S Toshiba Semiconductor and Storage | 100 |
| - | - | - | Through Hole | TO-220-3 Full Pack | NO | - | TO-220SIS | - | - | - | - | Toshiba | 20(A) | 600 V | 80 A | 20 A | - | - | 50 | ±25(V) | TOSHIBA CORP | Toshiba | GT20J341,S4X(S | - | - | - | - 25 V, + 25 V | - | + 150 C | - | - | Toshiba Semiconductor and Storage | - 55 C | - | Through Hole | Through Hole | - | 150C | -55C | Military | 150 °C | Tube | - | - | - | - | - | - | TO-220SIS | - | Active | - | - | 45 W | - | Active | No | 2.3 | Details | Yes | - | - | 300V, 20A, 33Ohm, 15V | - | - | - | - | 150°C (TJ) | Magazine | - | - | EAR99 | - | - | - | - | IGBTs | Si | - | - | unknown | 3 +Tab | - | - | Single | - | 45 | - | Standard | 45 W | - | N-CHANNEL | IGBT Transistors | - | - | 600 V | N | 45 W | 2V @ 15V, 20A | 20 A | 20 | - | 600 V | - | 80 A | 60ns/240ns | 500μJ (on), 400μJ (off) | 25 V | - | - | 90 ns | - | - | IGBT Transistors | - | ||
GT40RR21(STA1,E Toshiba Semiconductor and Storage | 11 |
| - | - | - | Through Hole | TO-3P-3, SC-65-3 | - | - | TO-3P(N) | - | - | - | GT40RR21 | Toshiba | - | 1.35 kV | 200 A | 40 A | - | - | 25 | - | - | Toshiba | - | - | - | - | - 25 V, + 25 V | - | + 175 C | - | - | Toshiba Semiconductor and Storage | - 55 C | - | - | Through Hole | - | - | - | - | - | Tube | - | - | - | - | - | - | - | - | - | - | - | 230 W | - | Active | - | - | Details | - | - | - | 280V, 40A, 10Ohm, 20V | - | - | - | - | 175°C (TJ) | Tube | - | - | - | - | - | - | - | IGBTs | Si | - | - | - | - | - | - | Single | - | - | - | Standard | 230 W | - | - | IGBT Transistors | - | - | 1200 V | - | - | 2.8V @ 15V, 40A | - | - | - | - | - | 200 A | - | -, 540μJ (off) | - | - | - | 600 ns | - | - | IGBT Transistors | - | ||
GT50JR22(STA1,E,S) Toshiba Semiconductor and Storage | 200 | - | - | - | Through Hole | Through Hole | TO-3P-3, SC-65-3 | - | 3 | TO-3P(N) | - | - | - | - | Toshiba | - | 600 V | - | 50 A | - | - | 25 | - | - | Toshiba | - | - | - | - | - 25 V, + 25 V | - | + 175 C | - | - | Toshiba Semiconductor and Storage | - 55 C | - | - | Through Hole | - | - | - | - | - | Tube | - | - | - | - | - | - | - | - | - | - | - | 230 W | - | Active | - | - | Compliant | - | - | - | - | - | - | - | 0.162260 oz | 175°C (TJ) | Tube | - | - | - | 175 °C | -55 °C | - | - | IGBTs | Si | - | - | - | - | - | - | Single | Single | 230 | - | Standard | 230 W | - | - | IGBT Transistors | 600 V | 50 A | 600 V | - | - | 2.2V @ 15V, 50A | - | 50 | - | - | - | 100 A | - | - | - | - | - | - | - | - | IGBT Transistors | Lead Free | ||
GT30J341,Q Toshiba Semiconductor and Storage | 27 |
| - | 12 Weeks | - | Through Hole | TO-3P-3, SC-65-3 | - | - | TO-3P(N) | - | - | - | GT30J341 | Toshiba | - | 600 V | 120 A | 59 A | - | - | 100 | - | TOSHIBA CORP | Toshiba | GT30J341,Q | - | - | - | - 25 V, + 25 V | - | + 175 C | - | - | Toshiba Semiconductor and Storage | - 55 C | - | - | Through Hole | - | - | - | - | - | Tray | - | , | - | - | - | - | - | - | Active | - | - | 230 W | - | Active | - | 5.67 | Details | - | - | - | 300V, 30A, 24Ohm, 15V | - | - | - | - | 175°C (TJ) | Tray | - | - | - | - | - | - | - | IGBTs | Si | - | - | unknown | - | - | - | Single | - | - | - | Standard | 230 W | - | - | IGBT Transistors | - | - | 600 V | - | - | 2V @ 15V, 30A | - | - | - | - | - | 120 A | 80ns/280ns | 800μJ (on), 600μJ (off) | - | - | - | 50 ns | - | - | IGBT Transistors | - | ||
GT40WR21,Q Toshiba Semiconductor and Storage | 24 |
| - | - | - | Through Hole | TO-3P-3, SC-65-3 | - | - | TO-3P(N) | - | - | - | - | Toshiba | - | 1.8 kV | 80 A | 40 A | - | - | 100 | - | - | Toshiba | - | - | - | - | - 25 V, + 25 V | - | + 175 C | - | - | Toshiba Semiconductor and Storage | - 55 C | - | - | Through Hole | - | - | - | - | - | Tray | - | - | - | - | - | - | - | - | - | - | - | 375 W | - | Active | - | - | Details | - | - | - | - | - | - | - | - | 175°C (TJ) | Tray | - | - | - | - | - | - | - | IGBTs | Si | - | - | - | - | - | - | Single | - | - | - | Standard | 375 W | - | - | IGBT Transistors | - | - | 1350 V | - | - | 5.9V @ 15V, 40A | - | - | - | - | - | 80 A | - | - | - | - | - | - | - | - | IGBT Transistors | - | ||
GT50JR21(STA1,E,S) Toshiba Semiconductor and Storage | 11 |
| - | - | - | Through Hole | TO-3P-3, SC-65-3 | - | - | TO-3P(N) | - | - | - | - | - | - | - | - | 50 A | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Toshiba Semiconductor and Storage | - | - | - | - | - | - | - | - | - | Tube | - | - | - | - | - | - | - | - | - | - | - | - | - | Active | - | - | Compliant | - | - | - | - | - | - | - | - | 175°C (TJ) | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 230 | - | Standard | 230 W | - | - | - | - | - | 600 V | - | - | 2V @ 15V, 50A | - | 50 | - | - | - | 100 A | - | - | - | - | - | - | - | - | - | - | ||
GT20N135SRA,S1E Toshiba Semiconductor and Storage | 32 |
| - | - | - | Through Hole | TO-247-3 | - | - | TO-247 | - | - | - | - | Toshiba | - | 1.35 kV | - | 40 A | - | - | 30 | - | - | Toshiba | - | - | - | - | - 25 V, + 25 V | - | + 175 C | - | - | Toshiba Semiconductor and Storage | - 55 C | - | - | Through Hole | - | - | - | - | - | Tube | - | - | - | - | - | - | - | - | - | - | - | 312 W | - | Active | - | - | Details | - | - | - | 300V, 40A, 39Ohm, 15V | - | - | - | 0.000217 oz | 175°C (TJ) | Tube | - | - | - | - | - | - | - | IGBTs | Si | - | - | - | - | - | - | Single | - | - | - | Standard | 312 W | - | - | IGBT Transistors | - | - | 1350 V | - | - | 2.4V @ 15V, 40A | - | - | - | - | 185 nC | 80 A | - | -, 700μJ (off) | - | - | - | - | - | - | IGBT Transistors | - | ||
GT30N135SRA,S1E Toshiba Semiconductor and Storage | 52 |
| - | - | - | Through Hole | TO-247-3 | - | - | TO-247 | - | - | - | - | - | - | 1.35 kV | - | 60 A | - | - | - | - | - | - | - | - | - | - | - 25 V, 25 V | - | + 175 C | - | - | Toshiba Semiconductor and Storage | - 55 C | - | - | Through Hole | - | - | - | - | - | Tube | - | - | - | - | - | - | - | - | - | - | - | 348 W | - | Active | - | - | - | - | - | - | 300V, 60A, 39Ohm, 15V | - | - | - | - | 175°C (TJ) | - | - | - | - | - | - | - | - | - | Si | - | - | - | - | - | - | Single | - | - | - | Standard | 348 W | - | - | - | - | - | 1350 V | - | - | 2.6V @ 15V, 60A | - | - | - | - | 270 nC | 120 A | - | -, 1.3mJ (off) | - | - | - | - | - | - | - | - | ||
GT60M105 Toshiba America Electronic Components | In Stock | - | Datasheet | - | - | - | - | NO | - | - | 3 | SILICON | - | - | - | - | - | - | - | - | - | - | - | TOSHIBA CORP | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 1 | - | - | - | - | - | PLASTIC/EPOXY | - | - | - | RECTANGULAR | FLANGE MOUNT | - | - | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | 800 ns | 500 ns | - | - | - | - | - | - | - | - | - | HIGH SPEED | - | - | - | SINGLE | THROUGH-HOLE | unknown | - | R-PSFM-T3 | Not Qualified | SINGLE | - | - | COLLECTOR | - | - | POWER CONTROL | N-CHANNEL | - | - | - | - | - | - | - | 60 A | - | - | 900 V | - | - | - | - | - | - | - | - | - | - | - | - | ||
 MIG10J805H Toshiba America Electronic Components | In Stock | - | Datasheet | - | - | - | - | NO | - | - | 20 | SILICON | - | - | - | - | - | - | - | - | - | - | - | TOSHIBA CORP | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 6 | - | - | - | - | - | UNSPECIFIED | IN-LINE, R-XDIP-T20 | - | - | RECTANGULAR | IN-LINE | - | - | Obsolete | MODULE | - | - | - | - | - | - | - | - | - | - | - | 500 ns | 150 ns | - | - | - | - | - | - | EAR99 | - | - | HIGH SPEED | - | - | - | DUAL | THROUGH-HOLE | unknown | 20 | R-XDIP-T20 | Not Qualified | BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THREE PHASE DIODE BRIDGE | - | - | ISOLATED | - | - | MOTOR CONTROL | N-CHANNEL | - | - | - | - | - | - | - | 10 A | - | - | 600 V | - | - | - | - | - | - | - | - | - | - | - | - | ||
GT50G102 Toshiba America Electronic Components | In Stock | - | Datasheet | - | - | - | - | NO | - | - | 3 | SILICON | - | - | - | - | - | - | - | - | - | - | - | TOSHIBA CORP | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 1 | - | - | - | - | - | PLASTIC/EPOXY | 2-16C1C, 3 PIN | - | - | RECTANGULAR | FLANGE MOUNT | - | - | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | 1800 ns | 400 ns | - | - | - | - | - | - | - | - | - | HIGH SPEED SWITCHING | - | - | - | SINGLE | THROUGH-HOLE | unknown | 3 | R-PSFM-T3 | Not Qualified | SINGLE | - | - | COLLECTOR | - | - | POWER CONTROL | N-CHANNEL | - | - | - | - | - | - | - | 50 A | - | - | 400 V | - | - | - | - | - | - | - | - | - | - | - | - | ||
GT60M103 Toshiba America Electronic Components | In Stock | - | Datasheet | - | - | - | - | - | - | - | - | SILICON | - | - | - | - | - | - | - | - | - | - | - | TOSHIBA CORP | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 1 | - | - | - | - | - | - | - | - | - | - | - | - | - | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | unknown | - | - | Not Qualified | SINGLE | - | - | - | - | - | - | N-CHANNEL | - | - | - | - | - | - | - | 60 A | - | - | 900 V | - | - | - | - | - | - | - | - | - | - | - | - | ||
MG15Q2YS9 Toshiba America Electronic Components | In Stock | - | Datasheet | - | - | - | - | - | - | - | - | SILICON | - | - | - | - | - | - | - | - | - | - | - | TOSHIBA CORP | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 2 | - | - | - | - | - | - | , | - | - | - | - | - | - | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | EAR99 | - | - | - | - | - | - | - | - | unknown | - | - | Not Qualified | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | - | - | - | - | - | - | N-CHANNEL | - | - | - | - | - | - | - | 15 A | - | - | 1200 V | - | - | - | - | - | - | - | - | - | - | - | - | ||
MP7003 Toshiba America Electronic Components | In Stock | - | Datasheet | - | - | - | - | NO | - | - | 7 | SILICON | - | - | - | - | - | - | - | - | - | - | - | TOSHIBA CORP | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 1 | - | - | - | 125 °C | - | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T7 | - | - | RECTANGULAR | FLANGE MOUNT | - | - | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | 700 ns | 700 ns | - | - | - | - | - | - | EAR99 | - | - | - | - | - | - | SINGLE | THROUGH-HOLE | unknown | - | R-PSFM-T7 | Not Qualified | SINGLE WITH BUILT-IN DIODE | - | - | - | - | - | - | N-CHANNEL | - | - | - | - | - | 37 W | - | 40 A | - | - | 600 V | - | - | - | - | 20 V | 2.7 V | - | - | - | - | - | - | ||
GT60M101 Toshiba America Electronic Components | In Stock | - | Datasheet | - | - | - | - | NO | - | - | 3 | SILICON | - | - | - | - | - | - | - | - | - | - | - | TOSHIBA CORP | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 1 | - | - | - | - | - | PLASTIC/EPOXY | 2-21F1C, 3 PIN | - | - | RECTANGULAR | FLANGE MOUNT | - | - | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | 1000 ns | 400 ns | - | - | - | - | - | - | - | - | - | HIGH SPEED SWITCHING | - | - | - | SINGLE | THROUGH-HOLE | unknown | 3 | R-PSFM-T3 | Not Qualified | SINGLE | - | - | COLLECTOR | - | - | POWER CONTROL | N-CHANNEL | - | - | - | - | - | - | - | 60 A | - | - | 900 V | - | - | - | - | - | - | - | - | - | - | - | - | ||
MG360V1US41 Toshiba America Electronic Components | In Stock | - | Datasheet | - | - | - | - | NO | - | - | 5 | SILICON | - | - | - | - | - | - | - | - | - | - | - | TOSHIBA CORP | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 1 | - | - | - | 150 °C | - | UNSPECIFIED | FLANGE MOUNT, R-XUFM-X5 | - | - | RECTANGULAR | FLANGE MOUNT | - | - | Obsolete | - | - | - | - | - | - | - | - | No | - | - | - | 1000 ns | 500 ns | - | - | - | - | - | - | EAR99 | - | - | HIGH SPEED | 8541.29.00.95 | - | - | UPPER | UNSPECIFIED | unknown | 5 | R-XUFM-X5 | Not Qualified | SINGLE WITH BUILT-IN DIODE | - | - | ISOLATED | - | - | MOTOR CONTROL | N-CHANNEL | - | - | - | - | - | 3600 W | - | 360 A | - | - | 1700 V | - | - | - | - | 20 V | 4.5 V | 8 V | - | 3600 W | 1500 ns | - | - | ||
GT50MR21,Q(O Toshiba | In Stock | - | - | - | - | - | - | - | - | - | - | - | No | - | - | - | - | - | - | - | Compliant | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Through Hole | - | - | - | - | - | - | - | - | - | 20 | 15.5 | - | - | - | 4.5 | - | - | 3 | - | No | - | - | - | Non-Compliant | - | TO-3PN | Tab | - | - | - | - | - | - | - | - | Obsolete | - | - | - | - | - | - | - | - | - | - | 3 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
GT30J122A(STA1，E Toshiba | In Stock | - | - | - | - | - | - | - | - | - | - | - | - | - | Toshiba | - | - | - | - | - | - | - | - | - | Toshiba | - | - | - | - | - 20 V, + 20 V | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | IGBTs | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | IGBT Transistors | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | IGBT Transistors | - | ||
GT50J342,Q(O Toshiba | In Stock | - | - | - | - | - | - | - | - | - | - | - | No | - | - | - | - | - | - | EAR99 | Compliant | - | - | - | - | - | 600 | 80 | 0.1 | - | ±25 | - | 175 | 394 | - | - | -55 | Through Hole | - | - | - | - | - | - | - | - | - | 19 | 15.5 | - | - | - | 4.5 | - | - | 3 | - | No | - | - | - | Compliant | - | TO-3PN | Tab | - | - | - | 1.5 | - | - | - | - | Obsolete | - | - | - | - | - | - | - | - | - | - | 3 | - | - | Single | - | - | - | - | - | - | - | - | - | - | - | N | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |