Filters
  • Current - Continuous Drain (Id) @ 25℃
  • Drain to Source Voltage (Vdss)
  • FET Type
  • Mounting Type
  • Package / Case
  • Operating Temperature
  • Vgs (Max)
  • Vgs(th) (Max) @ Id
  • Gate Charge (Qg) (Max) @ Vgs
  • Power Dissipation (Max)
  • Input Capacitance (Ciss) (Max) @ Vds
  • Rds On (Max) @ Id, Vgs

Attribute column

Manufacturer

UnitedSiC Transistors - FETs, MOSFETs - Single

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Product

Inventory

Pricing(USD)

Quantity

Datasheet

RoHS

Mounting Type

Package / Case

Supplier Device Package

Base Product Number

Brand

Channel Mode

Current - Continuous Drain (Id) @ 25℃

Drive Voltage (Max Rds On, Min Rds On)

Factory Pack QuantityFactory Pack Quantity

Id - Continuous Drain Current

Manufacturer

Maximum Operating Temperature

Mfr

Minimum Operating Temperature

Moisture Sensitive

Mounting Styles

Package

Pd - Power Dissipation

Power Dissipation (Max)

Product Status

Qg - Gate Charge

Qualification

Rds On - Drain-Source Resistance

RoHS

Tradename

Transistor Polarity

Typical Turn-Off Delay Time

Typical Turn-On Delay Time

Unit Weight

Vds - Drain-Source Breakdown Voltage

Vgs - Gate-Source Voltage

Vgs th - Gate-Source Threshold Voltage

Operating Temperature

Packaging

Series

Size / Dimension

Tolerance

Number of Terminations

Temperature Coefficient

Type

Resistance

Composition

Power (Watts)

Subcategory

Technology

Failure Rate

Configuration

Number of Channels

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drain to Source Voltage (Vdss)

Vgs (Max)

Product Type

Transistor Type

FET Feature

Product

Features

Product Category

Height Seated (Max)

Ratings

UJ4C075033B7S
UJ4C075033B7S

UnitedSiC

In Stock

-

-

Surface Mount

TO-263-8, D2Pak (7 Leads + Tab), TO-263CA

D2PAK-7

UJ4C075

UnitedSiC

-

44A (Tc)

12V

800

44 A

UnitedSiC

+ 175 C

UnitedSiC

- 55 C

-

SMD/SMT

-

197 W

197W (Tc)

Active

-

-

33 mOhms

Details

-

N-Channel

-

-

-

750 V

-

-

-55°C ~ 175°C (TJ)

Cut Tape

-

-

-

-

-

-

-

-

-

Transistors

-

-

-

-

P-Channel

41mOhm @ 30A, 12V

6V @ 10mA

1400 pF @ 400 V

37.8 nC @ 15 V

-

750 V

±20V

JFETs

-

-

-

-

JFET

-

-

UJ4C075033K3S
UJ4C075033K3S

UnitedSiC

In Stock

-

-

Through Hole

TO-247-3

TO-247-3

UJ4C075

UnitedSiC

-

47A (Tc)

12V

30

47 A

UnitedSiC

+ 175 C

UnitedSiC

- 55 C

-

SMD/SMT

Tube

242 W

242W (Tc)

Active

-

AEC-Q101

33 mOhms

Details

-

N-Channel

-

-

-

750 V

-

-

-55°C ~ 175°C (TJ)

Tube

-

-

-

-

-

-

-

-

-

Transistors

-

-

-

-

N-Channel

41mOhm @ 30A, 12V

6V @ 10mA

1400 pF @ 400 V

37.8 nC @ 15 V

-

750 V

±20V

JFETs

-

-

-

-

JFET

-

-

UJ3C120080K3S
UJ3C120080K3S

UnitedSiC

In Stock

-

-

Through Hole

TO-247-3

TO-247-3

UJ3C120080

UnitedSiC

Enhancement

33A (Tc)

12V

30

33 A

UnitedSiC

+ 175 C

UnitedSiC

- 55 C

-

Through Hole

Tube

254.2 W

254.2W (Tc)

Not For New Designs

51 nC

AEC-Q101

100 mOhms

Details

SiC FET

N-Channel

61 ns

22 ns

0.211644 oz

1.2 kV

- 25 V, + 25 V

4 V

-55°C ~ 175°C (TJ)

Tube

-

-

-

-

-

-

-

-

-

MOSFETs

-

-

Single

1 Channel

N-Channel

100mOhm @ 20A, 12V

6V @ 10mA

1500 pF @ 100 V

51 nC @ 15 V

14 ns

1200 V

±25V

MOSFET

-

-

-

-

MOSFET

-

-

UF3C120080K4S
UF3C120080K4S

UnitedSiC

In Stock

-

-

Through Hole

TO-247-4

TO-247-4

UF3C120080

UnitedSiC

Enhancement

33A (Tc)

12V

30

33 A

UnitedSiC

+ 175 C

UnitedSiC

- 55 C

-

Through Hole

Tube

254.2 W

254.2W (Tc)

Active

51 nC

AEC-Q101

100 mOhms

Details

SiC FET

N-Channel

43 ns

33 ns

0.211644 oz

1.2 kV

- 25 V, + 25 V

6 V

-55°C ~ 175°C (TJ)

Tube

-

-

-

-

-

-

-

-

-

MOSFETs

-

-

Single

1 Channel

N-Channel

100mOhm @ 20A, 12V

6V @ 10mA

1500 pF @ 100 V

43 nC @ 12 V

13 ns

1200 V

±25V

MOSFET

1 N-Channel

-

-

-

MOSFET

-

-

In Stock

-

-

Surface Mount

TO-263-8, D2Pak (7 Leads + Tab), TO-263CA

D2PAK-7

-

UnitedSiC

Enhancement

62A (Tc)

12V

800

62 A

UnitedSiC

+ 175 C

UnitedSiC

- 55 C

Yes

SMD/SMT

-

214 W

214W (Tc)

Active

43 nC

-

27 mOhms

Details

SiC FET

N-Channel

46 ns

23 ns

0.164906 oz

650 V

- 25 V, + 25 V

6 V

175°C (TJ)

Cut Tape

-

-

-

-

-

SiC FET

-

-

-

MOSFETs

-

-

Single

1 Channel

N-Channel

35mOhm @ 40A, 12V

6V @ 10mA

1500 pF @ 100 V

43 nC @ 12 V

26 ns, 28 ns

650 V

±25V

MOSFET

-

-

SiC FET

-

MOSFET

-

-

UF4C120070K4S
UF4C120070K4S

UnitedSiC

In Stock

-

-

Through Hole

TO-247-4

TO-247-4

-

UnitedSiC

Depletion

27.5A (Tc)

-

30

27.5 A

UnitedSiC

+ 175 C

UnitedSiC

- 55 C

-

Through Hole

Tube

217 W

217W (Tc)

Active

37.8 nC

-

91 mOhms

Details

-

N-Channel

-

-

-

1.2 kV

- 20 V, + 20 V

6 V

-55°C ~ 175°C (TJ)

Tube

-

-

-

-

-

-

-

-

-

MOSFETs

-

-

-

1 Channel

N-Channel

91mOhm @ 20A, 12V

6V @ 10mA

1370 pF @ 800 V

37.8 nC @ 15 V

-

1200 V

±20V

MOSFET

-

-

-

-

MOSFET

-

-

In Stock

-

-

Surface Mount

TO-263-8, D2Pak (7 Leads + Tab), TO-263CA

D2PAK-7

-

UnitedSiC

Enhancement

47A (Tc)

12V

800

47 A

UnitedSiC

+ 175 C

UnitedSiC

- 55 C

Yes

SMD/SMT

-

214 W

214W (Tc)

Active

43 nC

-

35 mOhms

Details

SiC FET

N-Channel

47 ns

37 ns

0.164906 oz

1.2 kV

- 25 V, + 25 V

6 V

-55°C ~ 175°C (TJ)

Cut Tape

-

-

-

-

-

SiC FET

-

-

-

MOSFETs

-

-

Single

1 Channel

N-Channel

45mOhm @ 35A, 12V

6V @ 10mA

1500 pF @ 100 V

43 nC @ 12 V

12 ns, 13 ns

1200 V

±25V

MOSFET

-

-

SiC FET

-

MOSFET

-

-

UF4C120070K3S
UF4C120070K3S

UnitedSiC

In Stock

-

-

Through Hole

TO-247-3

TO-247-3

-

UnitedSiC

Depletion

27.5A (Tc)

-

30

27.5 A

UnitedSiC

+ 175 C

UnitedSiC

- 55 C

-

Through Hole

Tube

217 W

217W (Tc)

Active

37.8 nC

-

91 mOhms

Details

-

N-Channel

-

-

-

1.2 kV

- 20 V, + 20 V

6 V

-55°C ~ 175°C (TJ)

Tube

-

-

-

-

-

-

-

-

-

MOSFETs

-

-

-

1 Channel

N-Channel

91mOhm @ 20A, 12V

6V @ 10mA

1370 pF @ 800 V

37.8 nC @ 15 V

-

1200 V

±20V

MOSFET

-

-

-

-

MOSFET

-

-

In Stock

-

-

Through Hole

TO-247-4

TO-247-4

-

UnitedSiC

Depletion

53A (Tc)

12V

30

53 A

UnitedSiC

+ 175 C

UnitedSiC

- 55 C

-

Through Hole

Tube

385 W

385W (Tc)

Active

37.8 nC

-

29 mOhms

Details

-

N-Channel

-

-

-

1.2 kV

- 20 V, + 20 V

6 V

-55°C ~ 175°C (TJ)

Tube

-

-

-

-

-

-

-

-

-

MOSFETs

-

-

-

1 Channel

N-Channel

29mOhm @ 40A, 12V

6V @ 10mA

1430 pF @ 800 V

37.8 nC @ 15 V

-

1200 V

±20V

MOSFET

-

-

-

-

MOSFET

-

-

UF4C120053K3S
UF4C120053K3S

UnitedSiC

In Stock

-

-

Through Hole

TO-247-3

TO-247-3

-

UnitedSiC

Depletion

34A (Tc)

12V

30

34 A

UnitedSiC

+ 175 C

UnitedSiC

- 55 C

-

Through Hole

Tube

263 W

263W (Tc)

Active

37.8 nC

-

67 mOhms

Details

-

N-Channel

-

-

-

1.2 kV

- 20 V, + 20 V

6 V

-55°C ~ 175°C (TJ)

Tube

-

-

-

-

-

-

-

-

-

MOSFETs

-

-

-

1 Channel

N-Channel

67mOhm @ 20A, 12V

6V @ 10mA

1370 pF @ 800 V

37.8 nC @ 15 V

-

1200 V

±20V

MOSFET

-

-

-

-

MOSFET

-

-

UJ4C075044K4S
UJ4C075044K4S

UnitedSiC

In Stock

-

-

Through Hole

TO-247-4

TO-247-4

UJ4C075

UnitedSiC

-

37.4A (Tc)

12V

30

37.4 A

UnitedSiC

+ 175 C

UnitedSiC

- 55 C

-

SMD/SMT

Tube

203 W

203W (Tc)

Active

-

AEC-Q101

44 mOhms

Details

-

N-Channel

-

-

-

750 V

-

-

-55°C ~ 175°C (TJ)

Tube

-

-

-

-

-

-

-

-

-

Transistors

-

-

-

-

N-Channel

56mOhm @ 25A, 12V

6V @ 10mA

1400 pF @ 400 V

37.8 nC @ 15 V

-

750 V

±20V

JFETs

-

-

-

-

JFET

-

-

UJ4C075044K3S
UJ4C075044K3S

UnitedSiC

In Stock

-

-

Through Hole

TO-247-3

TO-247-3

UJ4C075

-

-

37.4A (Tc)

12V

-

37.4 A

-

+ 175 C

UnitedSiC

- 55 C

-

SMD/SMT

Tube

203 W

203W (Tc)

Active

-

-

44 mOhms

-

-

N-Channel

-

-

-

750 V

-

-

-55°C ~ 175°C (TJ)

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

N-Channel

56mOhm @ 25A, 12V

6V @ 10mA

1400 pF @ 400 V

37.8 nC @ 15 V

-

750 V

±20V

-

-

-

-

-

-

-

-

In Stock

-

-

Through Hole

TO-247-4

TO-247-4

UJ4SC075

UnitedSiC

-

120A (Tc)

12V

30

120 A

UnitedSiC

+ 175 C

UnitedSiC

- 55 C

-

SMD/SMT

Tube

714 W

714W (Tc)

Active

-

-

5.9 mOhms

Details

-

N-Channel

-

-

-

750 V

-

-

-55°C ~ 175°C (TJ)

Tube

-

-

-

-

-

-

-

-

-

Transistors

-

-

-

-

N-Channel

7.4mOhm @ 80A, 12V

6V @ 10mA

8374 pF @ 400 V

164 nC @ 15 V

-

750 V

±20V

JFETs

-

-

-

-

JFET

-

-

UF3C120080B7S
UF3C120080B7S

UnitedSiC

In Stock

-

-

Surface Mount

TO-263-8, D2Pak (7 Leads + Tab), TO-263CA

D2PAK-7

UF3C120080

UnitedSiC

Enhancement

28.8A (Tc)

-

800

28.8 A

UnitedSiC

+ 175 C

UnitedSiC

- 55 C

Yes

Through Hole

-

190 W

190W (Tc)

Active

23 nC

-

85 mOhms

Details

SiC FET

N-Channel

30 ns

31 ns, 33 ns

-

1.2 kV

- 25 V, + 25 V

6 V

-55°C ~ 175°C (TJ)

Cut Tape

-

-

-

-

-

-

-

-

-

MOSFETs

-

-

Single

1 Channel

N-Channel

105mOhm @ 20A, 12V

6V @ 10mA

754 pF @ 100 V

23 nC @ 12 V

7 ns, 6 ns

1200 V

±25V

MOSFET

-

-

-

-

MOSFET

-

-

UJ4C075018K4S
UJ4C075018K4S

UnitedSiC

In Stock

-

-

Through Hole

TO-247-4

TO-247-4

UJ4C075

UnitedSiC

-

81A (Tc)

-

30

81 A

UnitedSiC

+ 175 C

UnitedSiC

- 55 C

-

Through Hole

Tube

385 W

385W (Tc)

Active

-

AEC-Q101

23 mOhms

Details

SiC FET

N-Channel

-

-

0.211644 oz

750 V

-

-

-55°C ~ 175°C (TJ)

Tube

-

-

-

-

-

-

-

-

-

Transistors

-

-

Single

-

N-Channel

23mOhm @ 20A, 12V

6V @ 10mA

1422 pF @ 100 V

37.8 nC @ 15 V

-

750 V

±20V

JFETs

-

-

-

-

JFET

-

-

UF4C120053K4S
UF4C120053K4S

UnitedSiC

In Stock

-

-

Through Hole

TO-247-4

TO-247-4

-

UnitedSiC

Depletion

34A (Tc)

12V

30

34 A

UnitedSiC

+ 175 C

UnitedSiC

- 55 C

-

Through Hole

Tube

263 W

263W (Tc)

Active

37.8 nC

-

67 mOhms

Details

-

N-Channel

-

-

-

1.2 kV

- 20 V, + 20 V

6 V

-55°C ~ 175°C (TJ)

Tube

-

-

-

-

-

-

-

-

-

MOSFETs

-

-

-

1 Channel

N-Channel

67mOhm @ 20A, 12V

6V @ 10mA

1370 pF @ 800 V

37.8 nC @ 15 V

-

1200 V

±20V

MOSFET

-

-

-

-

MOSFET

-

-

In Stock

-

-

Through Hole

TO-247-4

TO-247-4

-

UnitedSiC

Depletion

53A (Tc)

12V

30

53 A

UnitedSiC

+ 175 C

UnitedSiC

- 55 C

-

Through Hole

Tube

341 W

341W (Tc)

Active

37.8 nC

-

39 mOhms

Details

-

N-Channel

-

-

-

1.2 kV

- 20 V, + 20 V

6 V

-55°C ~ 175°C (TJ)

Tube

-

-

-

-

-

-

-

-

-

MOSFETs

-

-

-

1 Channel

N-Channel

39mOhm @ 20A, 12V

6V @ 10mA

1450 pF @ 15 V

37.8 nC @ 800 V

-

1200 V

±20V

MOSFET

-

-

-

-

MOSFET

-

-

UF3C120040K4S
UF3C120040K4S

UnitedSiC

In Stock

-

-

Through Hole

TO-247-4

TO-247-4

UF3C120040

UnitedSiC

Enhancement

65A (Tc)

12V

30

65 A

UnitedSiC

+ 175 C

UnitedSiC

- 55 C

-

Through Hole

Tube

429 W

429W (Tc)

Active

51 nC

AEC-Q101

45 mOhms

Details

SiC FET

N-Channel

50 ns

24 ns

0.211644 oz

1.2 kV

- 25 V, + 25 V

4 V

-55°C ~ 175°C (TJ)

Tube

-

-

-

-

-

-

-

-

-

MOSFETs

-

-

Single

1 Channel

N-Channel

45mOhm @ 40A, 12V

6V @ 10mA

1500 pF @ 100 V

43 nC @ 12 V

27 ns

1200 V

±25V

MOSFET

1 N-Channel

-

-

-

MOSFET

-

-

UF3C120150B7S
UF3C120150B7S

UnitedSiC

In Stock

-

-

Surface Mount

TO-263-8, D2Pak (7 Leads + Tab), TO-263CA

D2PAK-7

-

UnitedSiC

Enhancement

17A (Tc)

12V

800

17 A

UnitedSiC

+ 175 C

UnitedSiC

- 55 C

Yes

Through Hole

-

136 W

136W (Tc)

Active

25.7 nC

-

150 mOhms

Details

SiC FET

N-Channel

32 ns

32 ns

-

1.2 kV

- 25 V, + 25 V

4.4 V

-55°C ~ 175°C (TJ)

Cut Tape

-

-

-

-

-

-

-

-

-

MOSFETs

-

-

Single

1 Channel

N-Channel

180mOhm @ 5A, 12V

5.5V @ 10mA

738 pF @ 100 V

25.7 nC @ 12 V

6 ns

1200 V

±25V

MOSFET

1 N-Channel

Super Junction

-

-

MOSFET

-

-

UF3C120400B7S
UF3C120400B7S

UnitedSiC

In Stock

-

-

Surface Mount

1206 (3216 Metric)

1206

RS73G2BRT

-

Enhancement

7.6A (Tc)

12V

-

5.9 A

-

+ 175 C

KOA Speer Electronics, Inc.

- 55 C

-

SMD/SMT

Tape & Reel (TR)

100 W

100W (Tc)

Active

22.5 nC

-

400 mOhms

-

-

N-Channel

-

-

-

1.2 kV

- 25 V, + 25 V

6 V

-55°C ~ 155°C

-

RS73-RT

0.126 L x 0.063 W (3.20mm x 1.60mm)

±0.25%

2

±50ppm/°C

-

78.7 kOhms

Thick Film

0.333W, 1/3W

-

SiCFET (Silicon Carbide)

-

-

1 Channel

P-Channel

515mOhm @ 5A, 12V

6V @ 10mA

739 pF @ 800 V

22.5 nC @ 15 V

-

1200 V

±25V

-

-

-

-

Automotive AEC-Q200

-

0.028 (0.70mm)

AEC-Q200