Filters
  • Configuration
  • Current Drain (Id) - Max
  • Drain to Source Voltage (Vdss)
  • FET Type
  • Id - Continuous Drain Current
  • Input Capacitance (Ciss) (Max) @ Vds
  • Maximum Operating Temperature
  • Mfr
  • Minimum Operating Temperature
  • Mounting Styles
  • Mounting Type
  • Operating Temperature

Attribute column

Manufacturer

UnitedSiC Transistors - JFETs

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6 Results

Product

Inventory

Pricing(USD)

Quantity

Datasheet

RoHS

Mounting Type

Package / Case

Supplier Device Package

Base Product Number

Brand

Drain-Source Current at Vgs=0

Factory Pack QuantityFactory Pack Quantity

Gate-Source Cutoff Voltage

Id - Continuous Drain Current

Manufacturer

Maximum Operating Temperature

Mfr

Minimum Operating Temperature

Mounting Styles

Package

Pd - Power Dissipation

Product Status

Qualification

Rds On - Drain-Source Resistance

RoHS

Tradename

Transistor Polarity

Unit Weight

Vds - Drain-Source Breakdown Voltage

Vgs - Gate-Source Breakdown Voltage

Operating Temperature

Packaging

Series

Subcategory

Technology

Configuration

Power - Max

FET Type

Input Capacitance (Ciss) (Max) @ Vds

Drain to Source Voltage (Vdss)

Product Type

Current - Drain (Idss) @ Vds (Vgs=0)

Voltage - Breakdown (V(BR)GSS)

Resistance - RDS(On)

Current Drain (Id) - Max

Product Category

UJ3N120065K3S
UJ3N120065K3S

UnitedSiC

In Stock

-

-

Through Hole

TO-247-3

TO-247-3

UJ3N120065

UnitedSiC

5 uA

30

-

34 A

UnitedSiC

+ 175 C

UnitedSiC

- 55 C

Through Hole

Tube

254 W

Active

AEC-Q101

90 mOhms

Details

Sic JFET

N-Channel

-

1200 V

- 20 V to 3 V

-55°C ~ 175°C (TJ)

Tube

-

Transistors

SiC

Single

254 W

N-Channel

1008pF @ 100V

1.2 V

JFETs

5 μA @ 1.2 V

1.2 V

55 mOhms

34 A

JFET

UJ3N065080K3S
UJ3N065080K3S

UnitedSiC

In Stock

-

-

Through Hole

TO-247-3

TO-247-3

UJ3N065080

UnitedSiC

-

30

-

32 A

UnitedSiC

+ 175 C

UnitedSiC

- 55 C

Through Hole

Tube

190 W

Active

AEC-Q101

80 mOhms

Details

Sic JFET

N-Channel

0.546358 oz

650 V

20 V

-55°C ~ 175°C (TJ)

Tube

-

Transistors

SiC

Single

190 W

N-Channel

630pF @ 100V

650 V

JFETs

-

650 V

95 mOhms

32 A

JFET

UJ3N120070K3S
UJ3N120070K3S

UnitedSiC

In Stock

-

-

Through Hole

TO-247-3

TO-247-3

UJ3N120070

UnitedSiC

-

30

-

33.5 A

UnitedSiC

+ 175 C

UnitedSiC

- 55 C

Through Hole

Tube

254 W

Active

AEC-Q101

70 mOhms

Details

Sic JFET

N-Channel

0.387214 oz

1200 V

20 V

-55°C ~ 175°C (TJ)

Tube

-

Transistors

SiC

Single

254 W

N-Channel

985pF @ 100V

1200 V

JFETs

-

1200 V

90 mOhms

33.5 A

JFET

UF3N170400B7S
UF3N170400B7S

UnitedSiC

In Stock

-

-

Surface Mount

TO-263-8, D2Pak (7 Leads + Tab), TO-263CA

D2PAK-7

-

-

-

-

- 20 V to 3 V

6.8 A

-

+ 175 C

UnitedSiC

- 55 C

SMD/SMT

-

68 W

Active

-

400 mOhms

-

-

N-Channel

-

1.7 kV

-

-55°C ~ 175°C (TJ)

-

-

-

SiC

Single

68 W

N-Channel

225pF @ 100V

1.7 V

-

2.2 μA @ 1.7 V

1.7 V

500 mOhms

6.8 A

-

UJ3N120035K3S
UJ3N120035K3S

UnitedSiC

In Stock

-

-

Through Hole

TO-247-3

TO-247-3

UJ3N120035

UnitedSiC

-

30

-

63 A

UnitedSiC

+ 175 C

UnitedSiC

- 55 C

Through Hole

Tube

429 W

Active

AEC-Q101

35 mOhms

Details

Sic JFET

N-Channel

0.480890 oz

1200 V

20 V

-55°C ~ 175°C (TJ)

Tube

-

Transistors

SiC

Single

429 W

N-Channel

2145pF @ 100V

1200 V

JFETs

-

1200 V

45 mOhms

63 A

JFET

UJ3N065025K3S
UJ3N065025K3S

UnitedSiC

In Stock

-

-

Through Hole

TO-247-3

TO-247-3

UJ3N065025

UnitedSiC

-

30

-

85 A

UnitedSiC

+ 175 C

UnitedSiC

- 55 C

Through Hole

Tube

441 W

Active

AEC-Q101

25 mOhms

Details

Sic JFET

N-Channel

0.338401 oz

650 V

20 V

-55°C ~ 175°C (TJ)

Tube

-

Transistors

SiC

Single

441 W

N-Channel

2360pF @ 100V

650 V

JFETs

-

650 V

33 mOhms

85 A

JFET