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Saumitra Jagdale
Saumitra Jagdale is a Backend Developer, Freelance Technical Author, Global AI Ambassador (SwissCognitive), Open-source Contributor in Python projects, Leader of Tensorflow Community India, and Passionate AI/ML Enthusiast
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Comparative Analysis of Si and SiC Devices for EV Traction Inverters10 March 2023
Hello everyone, welcome to the new post today. In this article, we aim to study the characteristics, compare the methods to calculate the power losses in thermal models and understand the power consumption and chip area required for different Si and SiC devices through the simulation of an NEDC vehicle with set parameters.
GaN-Based Transistors for High-Frequency DC-DC Converter Applications06 July 2023
Hello everyone, welcome to the new post today.
Analysis of Wide Bandgap Devices in Renewable Energy Systems11 April 2023
The article will describe the Analysis of Wide Bandgap Devices in Renewable Energy Systems.
An Analysis of Current-Source Inverters Using High-Frequency WBG Switches09 May 2023
Hello everyone, welcome to the new post today.
Examining the performance of SiC inverter and DC-DC Converter Systems over Si21 March 2023
Hello everyone, welcome to the new post today. This posts introduce the industrial drives used in low-voltage applications (<1000V) for power semiconductors.
LLC Converter with Planar Matrix Transformer for High-Current-High-Power Applications15 March 2024
The rise of data centres in recent years, driven by cloud computing and big data, has caused a significant increase in electricity consumption. In the United States alone, it exceeded 70 billion kWh by 2014, making up 1.8% of total national electricity usage.
Role of Solar Energy in Wide-Band Gap Devices for Photovoltaic Applications15 March 2024
The enhancement of photovoltaic systems is closely linked to advancements in power semiconductor devices. Traditional Silicon-based power devices face challenges in meeting market demands for various applications such as EV, PV systems, and other high-power requirements. Presently, power device boasts enhanced efficiency, higher power density, increased blocking voltage, increased switching frequency, reduced cost, and improved reliability.
BSNPC Inverters in Photovoltaic Applications Using SiC and GaN04 January 2023
Hello everyone, welcome to the new post today. Today I will introduce BSNPC inverters in photovoltaic applications using SiC and GaN.
A Practical Methodology to Simulate 4H-SiC and GaN p-n Diodes with Model Parameter Adjustment in Medici07 February 2023
Hello everyone, welcome to the new post today. In this article, we present the simulation of 4H-SiC and GaN p-n diodes using the modified parameters as adjustments in Medici.
Understanding SiC MOSFET Power Modules and Ensuring its Short-Circuit Safety15 March 2024
Although silicon has long been the dominant semiconductor choice for power electronic devices, emerging limitations in terms of power losses, size constraints, and maximum allowable junction temperature have shown the need for Wide-Bandgap semiconductors (WBG) and its research. Among these, Silicon Carbide (SiC) stands out for its combination of high frequency switching capability and performance at high temperatures. Despite its advantages, recent research has shown the challenges SiC devices face, particularly in short-circuit conditions, where its performance falls short compared to traditional silicon devices.
Domestic Induction Solution using SSR-Based Power Semiconductor Devices11 September 2023
Hello everyone, welcome to the new post today. This article describes several solutions for replacing EMRs in household appliances with advanced power semiconductor devices that meet the I-V static characteristics required for BDS functionality.
Silicon Carbide: The Future of Power Electronics06 March 2023
Silicon-based power-switching devices have made it possible for systems to produce more power while operating at a higher efficiency thanks to the development of MOSFETs and IGBTs. This article mainly introduces the features and advantages of SiC over Si, the operation of SiC devices, and the characteristics of various SiC power devices.