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Categories

Transistors - FETs, MOSFETs - RF

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Product

Inventory

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RoHS

Factory Lead Time

Lifecycle Status

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Mount

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Surface Mount

Number of Pins

Supplier Device Package

Weight

Transistor Element Material

Base Product Number

Brand

Breakdown Voltage / V

Continuous Drain Current Id

Factory Pack QuantityFactory Pack Quantity

Forward Transconductance - Min

Id - Continuous Drain Current

Manufacturer

Maximum Operating Temperature

Mfr

Minimum Operating Temperature

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Pd - Power Dissipation

Product Status

Rds On - Drain-Source Resistance

RoHS

Transistor Polarity

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Vgs - Gate-Source Voltage

Vgs th - Gate-Source Threshold Voltage

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Series

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Max Output Power

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FET Technology

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Feedback Cap-Max (Crss)

Highest Frequency Band

Min Breakdown Voltage

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Product Category

Height

Length

Width

Radiation Hardening

REACH SVHC

RoHS Status

Lead Free

MRF8S9200NR3
MRF8S9200NR3

NXP USA Inc.

In Stock

-

Datasheet

10 Weeks

-

-

-

OM-780-2

YES

-

-

-

SILICON

-

-

-

-

-

-

-

-

-

-

-

-

1

225°C

-

-

-

-

-

-

-

-

-

-

-

70V

Tape & Reel (TR)

2009

-

e3

-

Active

3 (168 Hours)

2

-

EAR99

-

Matte Tin (Sn)

-

-

ESD PROTECTED

8541.29.00.75

-

-

-

-

-

DUAL

FLAT

260

-

-

940MHz

40

-

-

R-CDFP-F2

Not Qualified

-

SINGLE

-

-

ENHANCEMENT MODE

-

SOURCE

-

1.4A

AMPLIFIER

-

-

N-CHANNEL

-

LDMOS

-

-

-

19.9dB

-

-

-

-

-

70V

-

58W

METAL-OXIDE SEMICONDUCTOR

-

-

-

28V

-

-

-

-

-

-

-

-

-

-

ROHS3 Compliant

-

MMBFJ310LT1G
MMBFJ310LT1G

ON Semiconductor

In Stock

-

Datasheet

8 Weeks

ACTIVE (Last Updated: 1 day ago)

-

-

TO-236-3, SC-59, SOT-23-3

YES

3

-

1.437803g

-

-

-

25V

-

-

-

-

-

-

-

-

-

1

-

-

-

-

-

-

-

-

Military grade

-

-

-

-

Tape & Reel (TR)

2000

-

e3

yes

Active

1 (Unlimited)

3

-

EAR99

-

Tin (Sn)

150°C

-55°C

-

-

-

25V

-

225mW

-

DUAL

GULL WING

260

-

60mA

-

40

MMBFJ310

3

-

-

-

-

-

Single

DEPLETION MODE

225mW

-

-

10mA

AMPLIFIER

Halogen Free

25V

-

-

N-Channel JFET

-

60mA

25V

12dB

-

-

-

-

-

-

-

-

JUNCTION

-

-

-

10V

2.5 pF

ULTRA HIGH FREQUENCY B

-

-

-

940μm

2.9mm

1.3mm

No

No SVHC

ROHS3 Compliant

Lead Free

BF998E6327HTSA1
BF998E6327HTSA1

Infineon Technologies

In Stock

-

Datasheet

4 Weeks

-

Tin

Surface Mount

TO-253-4, TO-253AA

-

4

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

1

-

-

-

-

-

-

-

-

Military grade

-

-

-

-

Tape & Reel (TR)

2001

-

e3

yes

Not For New Designs

1 (Unlimited)

4

-

EAR99

-

-

150°C

-55°C

-

-

-

12V

-

200mW

-

DUAL

GULL WING

-

-

30mA

45MHz

-

BF998

4

-

-

-

SINGLE

1

-

DUAL GATE, DEPLETION MODE

-

SOURCE

-

10mA

-

Not Halogen Free

-

-

-

N-Channel

-

30mA

8V

28dB

-

0.03A

-

-

1.2pF

-

-

-

METAL-OXIDE SEMICONDUCTOR

-

2.8dB

-

-

-

-

-

-

-

1mm

2.9mm

1.3mm

No

-

ROHS3 Compliant

Lead Free

MMBFJ309LT1G
MMBFJ309LT1G

ON Semiconductor

In Stock

-

Datasheet

8 Weeks

ACTIVE (Last Updated: 1 day ago)

Tin

-

TO-236-3, SC-59, SOT-23-3

YES

3

-

1.437803g

-

-

-

-25V

-

-

-

-

-

-

-

-

-

1

-

-

-

-

-

-

-

-

Military grade

-

-

-

-

Tape & Reel (TR)

2006

-

e3

yes

Active

1 (Unlimited)

3

-

EAR99

-

-

150°C

-55°C

-

-

-

-25V

-

-

-

DUAL

GULL WING

260

-

30mA

-

40

MMBFJ309

3

-

-

-

-

-

Single

DEPLETION MODE

225mW

-

-

-

AMPLIFIER

Halogen Free

25V

-

-

N-Channel JFET

-

10mA

25V

-

-

-

-

-

5pF

-

-

-

JUNCTION

-

-

-

-

-

ULTRA HIGH FREQUENCY B

-

-

-

1.016mm

3.0226mm

1.397mm

No

No SVHC

ROHS3 Compliant

Lead Free

MMBF5484
MMBF5484

ON Semiconductor

In Stock

-

Datasheet

16 Weeks

ACTIVE (Last Updated: 3 days ago)

Tin

Surface Mount

TO-236-3, SC-59, SOT-23-3

-

3

-

30mg

-

-

-

-25V

-

-

-

-

-

-

-

-

-

1

-

-

-

-

-

-

-

-

-

-

-

-

-

Tape & Reel (TR)

2008

-

e3

yes

Active

1 (Unlimited)

3

-

EAR99

-

-

150°C

-55°C

-

8541.21.00.95

-

25V

-

225mW

-

DUAL

GULL WING

-

-

10mA

400MHz

-

MBF5484

-

-

-

-

-

-

Single

DEPLETION MODE

225mW

-

225mW

-

AMPLIFIER

-

-

-

-

N-Channel JFET

-

5mA

-25V

-

-

-

-

-

-

-

-

-

JUNCTION

-

4dB

-

15V

1 pF

-

25V

-

-

930μm

2.92mm

1.3mm

No

No SVHC

ROHS3 Compliant

Lead Free

PD55003L-E
PD55003L-E

STMicroelectronics

In Stock

-

Datasheet

11 Weeks

ACTIVE (Last Updated: 7 months ago)

-

Surface Mount

8-PowerVDFN

-

8

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

1

-

-

-

-

-

-

-

-

-

-

-

-

-

Tape & Reel (TR)

-

-

e3

-

Active

3 (168 Hours)

5

SMD/SMT

EAR99

-

MATTE TIN

150°C

-65°C

HIGH RELIABILITY

-

-

12V

-

14W

-

QUAD

-

260

-

2.5A

500MHz

30

PD55003

5

S-PQCC-N5

-

-

-

-

Single

ENHANCEMENT MODE

-

SOURCE

-

50mA

AMPLIFIER

-

40V

N-CHANNEL

-

LDMOS

-

2.5A

15V

19dB

3W

-

-

40V

34pF

-

-

-

METAL-OXIDE SEMICONDUCTOR

-

-

5 V

12.5V

-

-

-

-

-

880μm

5mm

5mm

No

No SVHC

ROHS3 Compliant

Lead Free

PD54008L-E
PD54008L-E

STMicroelectronics

In Stock

-

Datasheet

12 Weeks

ACTIVE (Last Updated: 7 months ago)

-

Surface Mount

8-PowerVDFN

-

8

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

1

-

-

-

-

-

-

-

-

-

-

-

-

-

Tape & Reel (TR)

-

-

e3

-

Active

3 (168 Hours)

5

-

EAR99

-

MATTE TIN

150°C

-65°C

HIGH RELIABILITY

-

-

3.1V

-

26.7W

-

QUAD

-

260

-

5A

500MHz

30

PD54008

14

S-PQCC-N5

-

-

-

-

Single

ENHANCEMENT MODE

26.7W

SOURCE

-

200mA

AMPLIFIER

-

25V

N-CHANNEL

-

LDMOS

-

5A

15V

-

8W

5A

25V

-

-

-

-

-

METAL-OXIDE SEMICONDUCTOR

-

-

-

7.5V

-

-

-

15dB

-

-

-

-

No

-

ROHS3 Compliant

Lead Free

2SK3557-6-TB-E
2SK3557-6-TB-E

ON Semiconductor

In Stock

-

Datasheet

9 Weeks

ACTIVE (Last Updated: 6 days ago)

Tin

-

TO-236-3, SC-59, SOT-23-3

YES

3

-

1.437803g

-

-

-

-

-

-

-

-

-

-

-

-

-

1

-

-

-

-

-

-

-

-

-

-

-

-

-

Tape & Reel (TR)

2007

-

e6

yes

Active

1 (Unlimited)

3

-

EAR99

-

-

150°C

-55°C

LOW NOISE

8541.21.00.95

-

-

-

200mW

-

DUAL

GULL WING

-

-

50mA

1kHz

-

2SK3557

3

-

-

-

-

-

Single

DEPLETION MODE

200mW

-

-

1mA

AMPLIFIER

-

15V

-

-

N-Channel JFET

-

50mA

-15V

-

-

0.05A

-

-

-

-

-

-

JUNCTION

-

1dB

-

5V

-

-

-

-

-

1.1mm

2.9mm

1.5mm

-

-

ROHS3 Compliant

Lead Free

PD55003-E
PD55003-E

STMicroelectronics

In Stock

-

Datasheet

25 Weeks

ACTIVE (Last Updated: 8 months ago)

-

Surface Mount

PowerSO-10 Exposed Bottom Pad

-

3

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

1

-

-

-

-

-

-

-

-

-

-

-

-

-

Tube

-

-

e3

-

Active

3 (168 Hours)

2

-

EAR99

-

Matte Tin (Sn) - annealed

165°C

-65°C

HIGH RELIABILITY

-

-

40V

-

31.7W

-

DUAL

GULL WING

250

-

2.5A

500MHz

30

PD55003

10

R-PDSO-G2

-

-

-

-

Single

ENHANCEMENT MODE

31.7W

SOURCE

-

50mA

AMPLIFIER

-

40V

N-CHANNEL

-

LDMOS

-

2.5A

20V

-

3W

-

40V

-

-

-

-

-

METAL-OXIDE SEMICONDUCTOR

-

-

-

12.5V

-

-

-

17dB

-

3.5mm

7.5mm

9.4mm

No

No SVHC

ROHS3 Compliant

Lead Free

MMBF4416A
MMBF4416A

ON Semiconductor

In Stock

-

Datasheet

16 Weeks

ACTIVE (Last Updated: 1 week ago)

Tin

Surface Mount

TO-236-3, SC-59, SOT-23-3

-

3

-

30mg

-

-

-

-35V

-

-

-

-

-

-

-

-

-

1

-

-

-

-

-

-

-

-

-

-

-

-

-

Tape & Reel (TR)

2005

-

e3

yes

Active

1 (Unlimited)

3

-

EAR99

-

-

150°C

-55°C

-

8541.21.00.95

-

35V

-

225mW

-

DUAL

GULL WING

-

-

10mA

400MHz

-

MMBF4416A

-

-

-

-

-

-

Single

DEPLETION MODE

225mW

-

-

5mA

AMPLIFIER

-

-

-

-

N-Channel JFET

-

15mA

-35V

-

-

-

-

-

-

-

-

-

JUNCTION

-

4dB

-

15V

0.8 pF

-

-

-

-

1.04mm

2.9mm

1.3mm

No

No SVHC

ROHS3 Compliant

Lead Free

MMBF5485
MMBF5485

ON Semiconductor

In Stock

-

Datasheet

42 Weeks

ACTIVE (Last Updated: 1 week ago)

-

Surface Mount

TO-236-3, SC-59, SOT-23-3

-

3

-

30mg

-

-

-

-

-

-

-

-

-

-

-

-

-

1

-

-

-

-

-

-

-

-

-

-

-

-

-

Tape & Reel (TR)

2008

-

e3

yes

Active

1 (Unlimited)

3

-

EAR99

-

Tin (Sn)

150°C

-55°C

-

8541.21.00.95

-

25V

-

225mW

-

DUAL

GULL WING

-

-

10mA

400MHz

-

MMBF5485

-

-

-

-

-

-

Single

DEPLETION MODE

225mW

-

-

-

AMPLIFIER

-

25V

-

-

N-Channel JFET

-

10mA

-25V

-

-

-

-

-

-

-

-

-

METAL-OXIDE SEMICONDUCTOR

-

4dB

-

15V

1 pF

-

-

-

-

930μm

2.92mm

1.3mm

No

No SVHC

ROHS3 Compliant

Lead Free

PD55008TR-E
PD55008TR-E

STMicroelectronics

In Stock

-

Datasheet

25 Weeks

-

-

Surface Mount

PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)

-

3

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

1

-

-

-

-

-

-

-

-

-

-

-

-

-

Tape & Reel (TR)

-

-

e3

-

Active

3 (168 Hours)

2

-

EAR99

-

Matte Tin (Sn) - annealed

165°C

-65°C

HIGH RELIABILITY

-

-

-

-

52.8W

-

DUAL

GULL WING

250

-

4A

500MHz

30

PD55008

10

R-PDSO-G2

-

-

-

-

Single

ENHANCEMENT MODE

52.8W

SOURCE

-

150mA

AMPLIFIER

-

40V

N-CHANNEL

-

LDMOS

-

4A

20V

17dB

8W

4A

40V

-

-

-

-

-

METAL-OXIDE SEMICONDUCTOR

-

-

-

12.5V

-

-

-

-

-

-

-

-

No

-

ROHS3 Compliant

-

BF999E6327HTSA1
BF999E6327HTSA1

Infineon Technologies

In Stock

-

Datasheet

6 Weeks

-

Tin

Surface Mount

TO-236-3, SC-59, SOT-23-3

-

3

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

1

-

-

-

-

-

-

-

-

Military grade

-

-

-

-

Tape & Reel (TR)

2007

-

e3

yes

Not For New Designs

1 (Unlimited)

3

-

EAR99

-

-

150°C

-55°C

-

-

-

20V

-

200mW

-

DUAL

GULL WING

-

-

30mA

45MHz

-

-

-

-

-

-

SINGLE

1

-

DEPLETION MODE

-

-

-

10mA

-

Not Halogen Free

-

-

-

N-Channel

-

30mA

12V

27dB

-

-

-

-

-

-

-

-

METAL-OXIDE SEMICONDUCTOR

-

2.1dB

-

10V

-

-

-

-

-

-

-

-

No

-

ROHS3 Compliant

Lead Free

VRF152GMP
VRF152GMP

Microchip Technology

In Stock

-

-

-

-

-

-

-

-

-

-

-

-

VRF152

Microchip Technology / Atmel

-

-

1

-

-

Microchip

-

Microchip Technology

-

-

-

-

Bulk

-

Active

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

MOSFETs

-

-

-

Si

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

RF MOSFET Transistors

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

RF MOSFET Transistors

-

-

-

-

-

-

-

SMMBFJ310LT1G
SMMBFJ310LT1G

ON Semiconductor

In Stock

-

Datasheet

8 Weeks

ACTIVE (Last Updated: 4 days ago)

Tin

-

TO-236-3, SC-59, SOT-23-3

YES

3

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Tape & Reel (TR)

2006

Automotive, AEC-Q101

e3

yes

Active

1 (Unlimited)

-

-

EAR99

-

-

150°C

-55°C

-

-

-

-

60mA

-

-

-

-

-

-

-

-

-

MMBFJ310

3

-

-

-

-

-

Single

-

-

-

-

10mA

-

Halogen Free

-

-

-

N-Channel JFET

-

-

25V

12dB

-

-

-

-

-

-

-

-

JUNCTION

0.225W

-

-

10V

-

-

-

-

-

-

-

-

-

-

ROHS3 Compliant

Lead Free

PD20010-E
PD20010-E

STMicroelectronics

In Stock

-

Datasheet

25 Weeks

ACTIVE (Last Updated: 7 months ago)

-

Surface Mount

PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)

-

3

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

1

-

-

-

-

-

-

-

-

-

-

-

-

-

Tube

-

-

-

-

Active

3 (168 Hours)

2

-

EAR99

-

-

165°C

-65°C

ESD PROTECTION, HIGH RELIABILITY

-

-

-

-

59W

-

DUAL

GULL WING

NOT SPECIFIED

-

5A

2GHz

NOT SPECIFIED

PD20010

10

R-PDSO-G2

Not Qualified

-

-

-

Single

ENHANCEMENT MODE

59W

SOURCE

-

150mA

AMPLIFIER

-

40V

N-CHANNEL

-

LDMOS

-

5A

15V

11dB

15W

5A

40V

-

-

-

-

10W

METAL-OXIDE SEMICONDUCTOR

-

-

-

13.6V

-

-

-

-

-

-

-

-

-

-

ROHS3 Compliant

-

MW6S004NT1
MW6S004NT1

NXP USA Inc.

In Stock

-

Datasheet

10 Weeks

-

-

-

PLD-1.5

YES

-

-

-

SILICON

-

-

-

-

-

-

-

-

-

-

-

-

1

150°C

-

-

-

-

-

-

-

Military grade

-

-

-

68V

Tape & Reel (TR)

2009

-

e3

-

Active

3 (168 Hours)

4

-

EAR99

-

Matte Tin (Sn)

-

-

-

8541.29.00.75

-

-

-

-

-

QUAD

NO LEAD

260

-

-

1.96GHz

40

MW6S004

-

R-PQSO-N4

Not Qualified

-

SINGLE

-

-

ENHANCEMENT MODE

-

SOURCE

-

50mA

AMPLIFIER

-

-

N-CHANNEL

-

LDMOS

-

-

-

18dB

-

-

-

-

-

68V

-

4W

METAL-OXIDE SEMICONDUCTOR

-

-

-

28V

-

-

-

-

-

-

-

-

-

-

ROHS3 Compliant

-

MRF6V2010NR1
MRF6V2010NR1

NXP USA Inc.

In Stock

-

Datasheet

10 Weeks

-

-

-

TO-270AA

YES

-

-

-

SILICON

-

-

-

-

-

-

-

-

-

-

-

-

1

225°C

-

-

-

-

-

-

-

-

-

-

-

110V

Tape & Reel (TR)

2006

-

e3

-

Active

3 (168 Hours)

2

-

EAR99

-

Tin (Sn)

-

-

-

8541.29.00.75

-

-

-

-

-

DUAL

FLAT

260

not_compliant

-

220MHz

40

MRF6V2010

-

R-PDFM-F2

Not Qualified

-

SINGLE

-

-

ENHANCEMENT MODE

-

SOURCE

-

30mA

AMPLIFIER

-

-

N-CHANNEL

-

LDMOS

-

-

-

23.9dB

-

-

-

-

-

110V

-

10W

METAL-OXIDE SEMICONDUCTOR

-

-

-

50V

-

-

-

-

-

-

-

-

-

-

ROHS3 Compliant

-

PD55008-E
PD55008-E

STMicroelectronics

In Stock

-

Datasheet

25 Weeks

ACTIVE (Last Updated: 8 months ago)

-

Surface Mount

PowerSO-10 Exposed Bottom Pad

-

3

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

1

-

-

-

-

-

-

-

-

Military grade

-

-

-

-

Tube

-

-

e3

-

Active

3 (168 Hours)

2

-

EAR99

-

Matte Tin (Sn) - annealed

165°C

-65°C

HIGH RELIABILITY

-

-

40V

-

52.8W

-

DUAL

GULL WING

250

-

4A

500MHz

30

PD55008

10

R-PDSO-G2

-

-

-

-

Single

ENHANCEMENT MODE

52.8W

SOURCE

-

150mA

AMPLIFIER

-

40V

N-CHANNEL

-

LDMOS

-

4A

20V

-

8W

4A

40V

-

58pF

-

-

-

METAL-OXIDE SEMICONDUCTOR

-

-

-

12.5V

-

-

40V

17dB

-

3.5mm

7.5mm

9.4mm

No

-

ROHS3 Compliant

Lead Free

VRF151
VRF151

Microchip Technology

In Stock

-

-

-

-

-

-

M174

-

-

M174

-

-

VRF151

-

-

16

1

5 mS

16 A

-

+ 150 C

Microchip Technology

- 65 C

Flange Mount

-

-

Tube

300 W

Active

-

Details

N-Channel

0.566059 oz

-

180 V

40 V

3.6 V

170 V

-

-

-

-

-

-

-

-

-

-

RF Power MOSFET

-

-

-

-

-

-

-

1mA

-

-

-

-

-

-

-

175MHz

-

-

-

-

-

175 MHz

N-Channel

-

-

-

300

-

150 W

250 mA

-

-

-

-

-

-

- 65 C to + 150 C

-

-

22 dB

-

-

-

-

-

-

N

150W

-

-

-

-

50 V

-

-

-

-

-

-

-

-

-

-

-

-

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