IRF4905PBF alternative parts: IRF460

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Part Number
Manufacturer:
Description:
MOSFET P-CH 55V 74A TO-220AB
Power Field-Effect Transistor, 21A I(D), 500V, 0.31ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, HERMETIC SEALED, MODIFIED TO-3, 2 PIN
Factory Lead Time:
12 Weeks
-
Mount:
Through Hole
-
Mounting Type:
Through Hole
-
Package / Case:
TO-220-3
-
Number of Pins:
3
-
Transistor Element Material:
SILICON
SILICON
Current - Continuous Drain (Id) @ 25℃:
74A Tc
-
Drive Voltage (Max Rds On, Min Rds On):
10V
-
Number of Elements:
1
1
Power Dissipation (Max):
200W Tc
-
Turn Off Delay Time:
61 ns
-
Operating Temperature:
-55°C~175°C TJ
-
Packaging:
Tube
-
Series:
HEXFET®
-
Published:
1997
-
JESD-609 Code:
e3
e0
Part Status:
Active
-
Moisture Sensitivity Level (MSL):
1 (Unlimited)
-
Number of Terminations:
3
-
Termination:
Through Hole
-
ECCN Code:
EAR99
-
Terminal Finish:
Matte Tin (Sn) - with Nickel (Ni) barrier
TIN LEAD
Additional Feature:
AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
-
Voltage - Rated DC:
-55V
-
Peak Reflow Temperature (Cel):
250
NOT SPECIFIED
Current Rating:
-74A
-
Time@Peak Reflow Temperature-Max (s):
30
-
Lead Pitch:
2.54mm
-
Number of Channels:
1
-
Element Configuration:
Single
-
Operating Mode:
ENHANCEMENT MODE
ENHANCEMENT MODE
Power Dissipation:
200W
-
Case Connection:
DRAIN
DRAIN
Turn On Delay Time:
18 ns
-
FET Type:
P-Channel
-
Transistor Application:
SWITCHING
SWITCHING
Rds On (Max) @ Id, Vgs:
20m Ω @ 38A, 10V
-
Vgs(th) (Max) @ Id:
4V @ 250μA
-
Input Capacitance (Ciss) (Max) @ Vds:
3400pF @ 25V
-
Gate Charge (Qg) (Max) @ Vgs:
180nC @ 10V
-
Rise Time:
99ns
-
Drain to Source Voltage (Vdss):
55V
-
Vgs (Max):
±20V
-
Fall Time (Typ):
96 ns
-
Continuous Drain Current (ID):
-74A
-
Threshold Voltage:
-4V
-
JEDEC-95 Code:
TO-220AB
TO-204AE
Gate to Source Voltage (Vgs):
20V
-
Drain Current-Max (Abs) (ID):
64A
-
Drain-source On Resistance-Max:
0.02Ohm
0.27 Ω
Drain to Source Breakdown Voltage:
-55V
-
Pulsed Drain Current-Max (IDM):
260A
84 A
Dual Supply Voltage:
-55V
-
Recovery Time:
130 ns
-
Max Junction Temperature (Tj):
175°C
-
Nominal Vgs:
-4 V
-
Height:
19.8mm
-
Length:
10.5156mm
-
Width:
4.69mm
-
REACH SVHC:
No SVHC
-
Radiation Hardening:
No
-
RoHS Status:
ROHS3 Compliant
-
Lead Free:
Contains Lead, Lead Free
-
Surface Mount:
-
NO
Number of Terminals:
-
2
Package Style:
-
FLANGE MOUNT
Package Body Material:
-
METAL
Reflow Temperature-Max (s):
-
NOT SPECIFIED
Rohs Code:
-
No
Manufacturer Part Number:
-
IRF460
Package Shape:
-
ROUND
Manufacturer:
-
Rochester Electronics LLC
Part Life Cycle Code:
-
Active
Ihs Manufacturer:
-
ROCHESTER ELECTRONICS LLC
Risk Rank:
-
5.13
Drain Current-Max (ID):
-
21 A
Pbfree Code:
-
No
Terminal Position:
-
BOTTOM
Terminal Form:
-
PIN/PEG
Reach Compliance Code:
-
unknown
JESD-30 Code:
-
O-MBFM-P2
Qualification Status:
-
COMMERCIAL
Configuration:
-
SINGLE WITH BUILT-IN DIODE
Polarity/Channel Type:
-
N-CHANNEL
DS Breakdown Voltage-Min:
-
500 V
Avalanche Energy Rating (Eas):
-
1200 mJ
FET Technology:
-
METAL-OXIDE SEMICONDUCTOR
IRF4905PBF

IRF4905PBF

(In Stock: 1000)

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