IRF5210PBF alternative parts: IRF5801TRPBF
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| Part Number | ||
| Manufacturer: | ||
| Description: | MOSFET P-CH 100V 40A TO-220AB | MOSFET N-CH 200V 600MA 6-TSOP |
Factory Lead Time: | 12 Weeks | 12 Weeks |
Contact Plating: | Tin | - |
Package / Case: | TO-220-3 | SOT-23-6 Thin, TSOT-23-6 |
Mount: | Through Hole | Surface Mount |
Mounting Type: | Through Hole | Surface Mount |
Number of Pins: | 3 | 6 |
Transistor Element Material: | SILICON | SILICON |
Number of Elements: | 1 | 1 |
Power Dissipation (Max): | 200W Tc | 2W Ta |
Turn Off Delay Time: | 79 ns | 8.8 ns |
Drive Voltage (Max Rds On, Min Rds On): | 10V | 10V |
Current - Continuous Drain (Id) @ 25℃: | 40A Tc | 600mA Ta |
Operating Temperature: | -55°C~175°C TJ | -55°C~150°C TJ |
Packaging: | Tube | Tape & Reel (TR) |
Series: | HEXFET® | HEXFET® |
Published: | 1998 | 2002 |
JESD-609 Code: | e3 | e3 |
Part Status: | Active | Active |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) | 1 (Unlimited) |
Number of Terminations: | 3 | 6 |
Termination: | Through Hole | SMD/SMT |
ECCN Code: | EAR99 | EAR99 |
Resistance: | 60mOhm | 2.2Ohm |
Additional Feature: | AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE | - |
Voltage - Rated DC: | -100V | 200V |
Peak Reflow Temperature (Cel): | 250 | - |
Current Rating: | -40A | 600mA |
Time@Peak Reflow Temperature-Max (s): | 30 | - |
Lead Pitch: | 2.54mm | - |
Number of Channels: | 1 | - |
Element Configuration: | Single | Single |
Operating Mode: | ENHANCEMENT MODE | ENHANCEMENT MODE |
Power Dissipation: | 200W | 2W |
Case Connection: | DRAIN | - |
Turn On Delay Time: | 17 ns | 6.5 ns |
FET Type: | P-Channel | N-Channel |
Transistor Application: | SWITCHING | SWITCHING |
Rds On (Max) @ Id, Vgs: | 60m Ω @ 24A, 10V | 2.2 Ω @ 360mA, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250μA | 5.5V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds: | 2700pF @ 25V | 88pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs: | 180nC @ 10V | 3.9nC @ 10V |
Rise Time: | 86ns | 8ns |
Drain to Source Voltage (Vdss): | 100V | - |
Vgs (Max): | ±20V | ±30V |
Fall Time (Typ): | 81 ns | 19 ns |
Continuous Drain Current (ID): | -40A | 600mA |
Threshold Voltage: | -4V | 5.5V |
JEDEC-95 Code: | TO-220AB | - |
Gate to Source Voltage (Vgs): | 20V | 30V |
Drain to Source Breakdown Voltage: | -100V | 200V |
Dual Supply Voltage: | -100V | 200V |
Avalanche Energy Rating (Eas): | 780 mJ | 9.9 mJ |
Recovery Time: | 260 ns | - |
Max Junction Temperature (Tj): | 175°C | - |
Nominal Vgs: | -4 V | 5.5 V |
Width: | 4.69mm | 1.7mm |
Length: | 10.5156mm | 2.9972mm |
Height: | 19.8mm | 990.6μm |
REACH SVHC: | No SVHC | No SVHC |
Radiation Hardening: | No | No |
RoHS Status: | ROHS3 Compliant | ROHS3 Compliant |
Lead Free: | Lead Free | Contains Lead |
Terminal Finish: | - | Matte Tin (Sn) |
Terminal Position: | - | DUAL |
Terminal Form: | - | GULL WING |
Pulsed Drain Current-Max (IDM): | - | 4.8A |
IRF5210PBF
(In Stock: 1019)
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