HITACHI MBB200GS6AW

having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.

The "Transistor Element Material" parameter in electronic components refers to the material used to construct the transistor within the component. Transistors are semiconductor devices that amplify or switch electronic signals and are a fundamental building block in electronic circuits. The material used for the transistor element can significantly impact the performance and characteristics of the component. Common materials used for transistor elements include silicon, germanium, and gallium arsenide, each with its own unique properties and suitability for different applications. The choice of transistor element material is crucial in designing electronic components to meet specific performance requirements such as speed, power efficiency, and temperature tolerance.

Any Feature, including a modified Existing Feature, that is not an Existing Feature.

In electronic components, the term "Terminal Position" refers to the physical location of the connection points on the component where external electrical connections can be made. These connection points, known as terminals, are typically used to attach wires, leads, or other components to the main body of the electronic component. The terminal position is important for ensuring proper connectivity and functionality of the component within a circuit. It is often specified in technical datasheets or component specifications to help designers and engineers understand how to properly integrate the component into their circuit designs.

Occurring at or forming the end of a series, succession, or the like; closing; concluding.

Reach Compliance Code refers to a designation indicating that electronic components meet the requirements set by the Registration, Evaluation, Authorization, and Restriction of Chemicals (REACH) regulation in the European Union. It signifies that the manufacturer has assessed and managed the chemical substances within the components to ensure safety and environmental protection. This code is vital for compliance with regulations aimed at minimizing risks associated with hazardous substances in electronic products.

JESD-30 Code refers to a standardized descriptive designation system established by JEDEC for semiconductor-device packages. This system provides a systematic method for generating designators that convey essential information about the package's physical characteristics, such as size and shape, which aids in component identification and selection. By using JESD-30 codes, manufacturers and engineers can ensure consistency and clarity in the specification of semiconductor packages across various applications and industries.

An indicator of formal certification of qualifications.

The parameter "Configuration" in electronic components refers to the specific arrangement or setup of the components within a circuit or system. It encompasses how individual elements are interconnected and their physical layout. Configuration can affect the functionality, performance, and efficiency of the electronic system, and may influence factors such as signal flow, impedance, and power distribution. Understanding the configuration is essential for design, troubleshooting, and optimizing electronic devices.

Case Connection refers to the method by which an electronic component's case or housing is connected to the electrical circuit. This connection is important for grounding purposes, mechanical stability, and heat dissipation. The case connection can vary depending on the type of component and its intended application. It is crucial to ensure a secure and reliable case connection to maintain the overall performance and safety of the electronic device.

In the context of electronic components, the parameter "Transistor Application" refers to the specific purpose or function for which a transistor is designed and used. Transistors are semiconductor devices that can amplify or switch electronic signals and are commonly used in various electronic circuits. The application of a transistor can vary widely depending on its design and characteristics, such as whether it is intended for audio amplification, digital logic, power control, or radio frequency applications. Understanding the transistor application is important for selecting the right type of transistor for a particular circuit or system to ensure optimal performance and functionality.

In electronic components, the parameter "Polarity/Channel Type" refers to the characteristic that determines the direction of current flow or the type of signal that can be accommodated by the component. For components like diodes and transistors, polarity indicates the direction in which current can flow through the component, such as forward bias or reverse bias for diodes. For components like MOSFETs or JFETs, the channel type refers to whether the component is an N-channel or P-channel device, which determines the type of charge carriers that carry current through the component. Understanding the polarity or channel type of a component is crucial for proper circuit design and ensuring that the component is connected correctly to achieve the desired functionality.

Power Dissipation-Max (Abs) refers to the maximum amount of power that an electronic component can dissipate without undergoing thermal damage or degradation. This value is crucial for ensuring reliable operation, as exceeding it can result in overheating and failure. It is typically specified in watts and serves as a critical parameter for designers to determine proper heat management strategies in circuits. Properly managing the power dissipation is essential for the longevity and performance of electronic devices.

The parameter "Collector Current-Max (IC)" in electronic components refers to the maximum amount of current that can safely flow through the collector terminal of a transistor without causing damage to the component. It is an important specification that indicates the upper limit of current that the transistor can handle under normal operating conditions. Exceeding this maximum current rating can lead to overheating and potentially result in the failure of the transistor. Designers must ensure that the collector current does not exceed this specified limit to prevent damage to the component and ensure reliable operation of the circuit.

Collector-Emitter Voltage-Max, often abbreviated as Vce(max), is a key specification in bipolar junction transistors (BJTs). It represents the maximum voltage that can be applied between the collector and emitter terminals without risking damage to the transistor. Exceeding this voltage can lead to breakdown conditions, resulting in device failure or reliability issues. This parameter is crucial for ensuring safe operation within the specified design limits of electronic circuits using transistors.

The "Gate-Emitter Voltage-Max" parameter is a specification commonly found in field-effect transistors (FETs) and insulated gate bipolar transistors (IGBTs). It refers to the maximum allowable voltage that can be applied between the gate and emitter terminals of the device without causing damage. Exceeding this voltage limit can lead to breakdown of the gate oxide layer or other critical components, resulting in potential device failure.This parameter is crucial for ensuring the reliable operation of the transistor and preventing overvoltage conditions that could compromise its performance or longevity. Designers must carefully consider the Gate-Emitter Voltage-Max specification when selecting and using these components in electronic circuits to avoid exceeding the specified limits and causing damage to the device. It is typically provided in the datasheet of the component and serves as a key parameter for proper device operation within safe operating conditions.

VCEsat-Max refers to the maximum collector-emitter saturation voltage of a bipolar junction transistor (BJT) or an insulated gate bipolar transistor (IGBT). It is a crucial parameter that indicates the minimum voltage drop across the collector-emitter junction when the transistor is in saturation mode. This parameter is important for determining the efficiency and performance of the transistor in switching applications. A lower VCEsat-Max value indicates better performance and reduced power losses in the transistor during operation. Designers often consider this parameter when selecting transistors for applications where minimizing power dissipation is critical.