Saumitra Jagdale
Saumitra Jagdale is a Backend Developer, Freelance Technical Author, Global AI Ambassador (SwissCognitive), Open-source Contributor in Python projects, Leader of Tensorflow Community India, and Passionate AI/ML Enthusiast
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Si vs SiC Diodes: A Performance Study of Interleaved Boost Converters for PV Applications14 March 2023
Hello everyone, welcome to the new post today.
Methodologies for Increasing Efficiency of Fuel Stack Technology for Energy Generation19 November 2024
Presently, power companies are moving towards renewable energy systems. Conventional energy sources are more expensive because they require a vast network to be maintained and huge human resources. Also, they harm the environment by releasing several harmful gases. As the industry’s focus shifts toward renewable energy sources, energy systems powered by Proton Exchange Membrane Fuel Stacks (PEMFS) are gaining traction.
Improving the Energy Conversion Efficiency of Triboelectric Nanogenerators19 November 2024
There is a huge growth in demand for self-sustaining electronic devices, as the traditional power-generating devices fail in remote and harsh environments due to the periodic requirement of battery changes. Also, these devices are frequency specific; some work only in high frequency and some in low frequency. Triboelectric nanogenerators (TENGs) provide a promising solution by efficiently converting mechanical energy into electricity as they are versatile, compact, and cheap, making them a popular choice.
Advanced Aircraft Power Electronics Systems and Influence of Simulation, Standards, and Wide Band-Gap Devices18 February 2024
Wide bandgap (WBG) devices like Silicon Carbide (SiC) and Gallium Nitride (GaN) are revolutionizing aircraft power electronics by offering higher efficiency, faster switching speeds, and better high-temperature tolerance compared to traditional Silicon-based technologies. These advancements support the transition towards More Electric and All Electric Aircraft by improving power system performance, but challenges in integration, cost, and fabrication processes still require significant research and development efforts.
Using SiC-GaN to Create Two-Phase Interleaved DC-DC Converters for Plug-in Electric Vehicles03 February 2023
Hello everyone, welcome to the new post today. This post will introduyce using SiC-GaN to create two-phase interleaved DC-DC converters for plug-in electric vehicles.
Domestic Induction Solution using SSR-Based Power Semiconductor Devices11 September 2023
Hello everyone, welcome to the new post today. This article describes several solutions for replacing EMRs in household appliances with advanced power semiconductor devices that meet the I-V static characteristics required for BDS functionality.
Discovering New and Advanced Methodology for Determining the Dynamic Characterization of Wide Bandgap Devices15 March 2024
For a long era, silicon has stood out as the primary material for fabricating electronic devices due to its affordability, moderate efficiency, and performance capabilities. Despite its widespread use, silicon faces several limitations that render it unsuitable for applications involving high power and elevated temperatures. As technological advancements continue and the industry demands enhanced efficiency from devices, these limitations become increasingly vivid. In the quest for electronic devices that are more potent, efficient, and compact, wide bandgap materials are emerging as a dominant player. Their superiority over silicon in crucial aspects such as efficiency, higher junction temperatures, power density, thinner drift regions, and faster switching speeds positions them as the preferred materials for the future of power electronics.
Understanding SiC MOSFET Power Modules and Ensuring its Short-Circuit Safety15 March 2024
Although silicon has long been the dominant semiconductor choice for power electronic devices, emerging limitations in terms of power losses, size constraints, and maximum allowable junction temperature have shown the need for Wide-Bandgap semiconductors (WBG) and its research. Among these, Silicon Carbide (SiC) stands out for its combination of high frequency switching capability and performance at high temperatures. Despite its advantages, recent research has shown the challenges SiC devices face, particularly in short-circuit conditions, where its performance falls short compared to traditional silicon devices.
A Practical Methodology to Simulate 4H-SiC and GaN p-n Diodes with Model Parameter Adjustment in Medici07 February 2023
Hello everyone, welcome to the new post today. In this article, we present the simulation of 4H-SiC and GaN p-n diodes using the modified parameters as adjustments in Medici.
A Hybrid SiC and GaN-Based DC-DC Converter for EVs20 September 2024
Across the globe, there is an increase in the usage of EVs, as they are an environmentally friendly way of commuting daily. The performance of these vehicles depends on the power electronics that manage the energy flow efficiently. On this front, there are two types of EVs, BEV (Battery Electric Vehicle) and HEV (Hybrid Electric Vehicle). Both types have a Plug-in variation equipped with a charging port to be connected to the power grid.
Silicon Carbide: The Future of Power Electronics06 March 2023
Silicon-based power-switching devices have made it possible for systems to produce more power while operating at a higher efficiency thanks to the development of MOSFETs and IGBTs. This article mainly introduces the features and advantages of SiC over Si, the operation of SiC devices, and the characteristics of various SiC power devices.
Cryogenic Cooling Technology using SiC and GaN Devices07 July 2023
Hello everyone, welcome to the new post today. This article introduces the characteristics and challenges of WBG devices in cryogenic cooling applications and demonstrates their operation.