ROHM Semiconductor 2SA2029T2L

having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.

The "Transistor Element Material" parameter in electronic components refers to the material used to construct the transistor within the component. Transistors are semiconductor devices that amplify or switch electronic signals and are a fundamental building block in electronic circuits. The material used for the transistor element can significantly impact the performance and characteristics of the component. Common materials used for transistor elements include silicon, germanium, and gallium arsenide, each with its own unique properties and suitability for different applications. The choice of transistor element material is crucial in designing electronic components to meet specific performance requirements such as speed, power efficiency, and temperature tolerance.

In electronic components, the term "Terminal Position" refers to the physical location of the connection points on the component where external electrical connections can be made. These connection points, known as terminals, are typically used to attach wires, leads, or other components to the main body of the electronic component. The terminal position is important for ensuring proper connectivity and functionality of the component within a circuit. It is often specified in technical datasheets or component specifications to help designers and engineers understand how to properly integrate the component into their circuit designs.

Occurring at or forming the end of a series, succession, or the like; closing; concluding.

Peak Reflow Temperature (Cel) is a parameter that specifies the maximum temperature at which an electronic component can be exposed during the reflow soldering process. Reflow soldering is a common method used to attach electronic components to a circuit board. The Peak Reflow Temperature is crucial because it ensures that the component is not damaged or degraded during the soldering process. Exceeding the specified Peak Reflow Temperature can lead to issues such as component failure, reduced performance, or even permanent damage to the component. It is important for manufacturers and assemblers to adhere to the recommended Peak Reflow Temperature to ensure the reliability and functionality of the electronic components.

Reach Compliance Code refers to a designation indicating that electronic components meet the requirements set by the Registration, Evaluation, Authorization, and Restriction of Chemicals (REACH) regulation in the European Union. It signifies that the manufacturer has assessed and managed the chemical substances within the components to ensure safety and environmental protection. This code is vital for compliance with regulations aimed at minimizing risks associated with hazardous substances in electronic products.

JESD-30 Code refers to a standardized descriptive designation system established by JEDEC for semiconductor-device packages. This system provides a systematic method for generating designators that convey essential information about the package's physical characteristics, such as size and shape, which aids in component identification and selection. By using JESD-30 codes, manufacturers and engineers can ensure consistency and clarity in the specification of semiconductor packages across various applications and industries.

The parameter "Configuration" in electronic components refers to the specific arrangement or setup of the components within a circuit or system. It encompasses how individual elements are interconnected and their physical layout. Configuration can affect the functionality, performance, and efficiency of the electronic system, and may influence factors such as signal flow, impedance, and power distribution. Understanding the configuration is essential for design, troubleshooting, and optimizing electronic devices.

In the context of electronic components, the parameter "Transistor Application" refers to the specific purpose or function for which a transistor is designed and used. Transistors are semiconductor devices that can amplify or switch electronic signals and are commonly used in various electronic circuits. The application of a transistor can vary widely depending on its design and characteristics, such as whether it is intended for audio amplification, digital logic, power control, or radio frequency applications. Understanding the transistor application is important for selecting the right type of transistor for a particular circuit or system to ensure optimal performance and functionality.

In electronic components, the parameter "Polarity/Channel Type" refers to the characteristic that determines the direction of current flow or the type of signal that can be accommodated by the component. For components like diodes and transistors, polarity indicates the direction in which current can flow through the component, such as forward bias or reverse bias for diodes. For components like MOSFETs or JFETs, the channel type refers to whether the component is an N-channel or P-channel device, which determines the type of charge carriers that carry current through the component. Understanding the polarity or channel type of a component is crucial for proper circuit design and ensuring that the component is connected correctly to achieve the desired functionality.

Power Dissipation-Max (Abs) refers to the maximum amount of power that an electronic component can dissipate without undergoing thermal damage or degradation. This value is crucial for ensuring reliable operation, as exceeding it can result in overheating and failure. It is typically specified in watts and serves as a critical parameter for designers to determine proper heat management strategies in circuits. Properly managing the power dissipation is essential for the longevity and performance of electronic devices.

The parameter "Collector Current-Max (IC)" in electronic components refers to the maximum amount of current that can safely flow through the collector terminal of a transistor without causing damage to the component. It is an important specification that indicates the upper limit of current that the transistor can handle under normal operating conditions. Exceeding this maximum current rating can lead to overheating and potentially result in the failure of the transistor. Designers must ensure that the collector current does not exceed this specified limit to prevent damage to the component and ensure reliable operation of the circuit.

The parameter "DC Current Gain-Min (hFE)" in electronic components refers to the minimum value of the DC current gain of a bipolar junction transistor (BJT). It is a measure of how much the transistor amplifies the input current to produce the output current. The hFE value indicates the ratio of the output current to the input current when the transistor is operating in the active region. A higher hFE value signifies a higher current gain and better amplification capabilities of the transistor. It is an important parameter to consider when designing and analyzing transistor circuits for various electronic applications.

Collector-Emitter Voltage-Max, often abbreviated as Vce(max), is a key specification in bipolar junction transistors (BJTs). It represents the maximum voltage that can be applied between the collector and emitter terminals without risking damage to the transistor. Exceeding this voltage can lead to breakdown conditions, resulting in device failure or reliability issues. This parameter is crucial for ensuring safe operation within the specified design limits of electronic circuits using transistors.

VCEsat-Max refers to the maximum collector-emitter saturation voltage of a bipolar junction transistor (BJT) or an insulated gate bipolar transistor (IGBT). It is a crucial parameter that indicates the minimum voltage drop across the collector-emitter junction when the transistor is in saturation mode. This parameter is important for determining the efficiency and performance of the transistor in switching applications. A lower VCEsat-Max value indicates better performance and reduced power losses in the transistor during operation. Designers often consider this parameter when selecting transistors for applications where minimizing power dissipation is critical.

The parameter "Collector-Base Capacitance-Max" refers to the maximum capacitance that can exist between the collector and base terminals of a semiconductor device, such as a transistor. This capacitance is a result of the physical structure and material properties of the device and can have an impact on its performance in high-frequency applications. In practical terms, this parameter represents the maximum amount of charge that can be stored in the collector-base junction when a voltage is applied between the collector and base terminals. It is an important consideration in circuit design, especially in applications where high-speed switching or high-frequency operation is required, as excessive capacitance can lead to signal distortion or reduced performance.Manufacturers provide this specification to help engineers and designers understand the behavior of the device in different operating conditions and to ensure that the component meets the requirements of the intended application. It is typically measured in picofarads (pF) and is an essential parameter to consider when selecting components for high-frequency circuits.