International Rectifier DirectFET series High-performance power MOSFETs with low on-state resistance

Features and Applications of DirectFET series High-performance power MOSFETs with low on-state resistance

The purpose of this article is to briefly illustrate what is possible with MOSFETs and the features and applications of these MOSFETs manufactured by International Rectifier under the DirectFET series.

Applications

  • Lighting
  • Motor drives
Associated Products

Part NumberDescriptionStockRFQ
IRF6607Power Field-Effect Transistor, 27A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOMETRIC-30RFQ
IRFD91200RFQ
IRF6691Power Field-Effect Transistor, 32A I(D), 20V, 0.0018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOMETRIC, 2 PIN0RFQ
IRF6626Power Field-Effect Transistor, 16A I(D), 30V, 0.0054ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOMETRIC-30RFQ
IRF7325Small Signal Field-Effect Transistor, 7.8A I(D), 12V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-80RFQ
IRF341IRF341 - 10A, 350V, N-CHANNEL, P3068BUY
Technical Documents

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The OptiMOS™ low voltage MOSFET family demostrate a combination of the industry's lowest on-state resistance R DS(on) and best switching perfomance in Power. This is Infineon's solution on the challenge of growing power demands, higher fficiency and lower SMPS cost, when the available space at the same time is constantly shrinking and leading to higher power density reguirements.

Low voltage power MOSFETS - Infineon Technologies


DirectFET is a series of high-performance power MOSFETs with low on-state resistance developed by an International Rectifier. DirectFET MOSFETs are designed to provide high efficiency and reliability in a variety of applications, including power supplies, motor control, lighting, and automotive systems. The low on-state resistance of the DirectFET MOSFETs results in reduced conduction losses, improving efficiency and reducing heat generation.

Features

The main features of DirectFET series High-performance power MOSFETs with low on-state resistance may be summarized as follows:

1. DirectFET MOSFETs feature a low on-state resistance, making them ideal for high-power applications.

2. They are also designed with a low gate charge, which reduces switching losses and improves efficiency.

3. The package design of the DirectFET allows for better heat dissipation and lower thermal resistance, leading to improved reliability and performance.

4. DirectFET MOSFETs are available in a variety of voltage ratings and current ratings to suit different applications.

5. They are also designed to be easy to use, with a simple and robust package design that is compatible with standard surface-mount technology.

Applications

  • Power supplies

  • Motor control

  • Lighting

  • Electric vehicles

  • Hybrid electric vehicles

  • Battery management systems

  • Synchronous rectification

  • Power factor correction

  • DC-DC converters

DirectFET MOSFETs are commonly used in high-power applications, such as power supplies, motor control, and lighting. They are also used in automotive applications, including electric vehicles, hybrid electric vehicles, and battery management systems. DirectFET MOSFETs can be used in a variety of switching applications, including synchronous rectification, power factor correction, and DC-DC converters. They are also suitable for Class-D audio amplifiers, which require high efficiency and low distortion.


Frequently Asked Questions

What are the benefits of using DirectFET power MOSFETs?

DirectFET power MOSFETs offer several benefits, including improved efficiency, reduced switching losses, and higher power density. They also have a smaller footprint than traditional power MOSFETs, which can help to save board space and reduce system costs.

What are the key specifications of DirectFET power MOSFETs?

The key specifications of DirectFET power MOSFETs include the on-state resistance, gate charge, maximum voltage rating, and maximum current rating.

What are some of the challenges associated with using DirectFET power MOSFETs?

One of the main challenges associated with using DirectFET power MOSFETs is their high switching speeds, which can cause electromagnetic interference (EMI) and noise issues. However, these issues can be addressed through careful design and layout of the circuit board.