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Saumitra Jagdale
Saumitra Jagdale is a Backend Developer, Freelance Technical Author, Global AI Ambassador (SwissCognitive), Open-source Contributor in Python projects, Leader of Tensorflow Community India, and Passionate AI/ML Enthusiast
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Using SiC-GaN to Create Two-Phase Interleaved DC-DC Converters for Plug-in Electric Vehicles03 February 2023
Hello everyone, welcome to the new post today. This post will introduyce using SiC-GaN to create two-phase interleaved DC-DC converters for plug-in electric vehicles.
A Hybrid SiC and GaN-Based DC-DC Converter for EVs20 September 2024
Across the globe, there is an increase in the usage of EVs, as they are an environmentally friendly way of commuting daily. The performance of these vehicles depends on the power electronics that manage the energy flow efficiently. On this front, there are two types of EVs, BEV (Battery Electric Vehicle) and HEV (Hybrid Electric Vehicle). Both types have a Plug-in variation equipped with a charging port to be connected to the power grid.
Real-time Cloud Analytics in Semiconductor Manufacturing01 November 2022
Ever since technologies like Artificial Intelligence, Machine Learning, the Internet of Things (IoT), etc have been introduced into industries, the manufacturing sector has undergone a revolution in the mass production of various systems and devices.
SiC Power Conversion Devices at High Ambient Temperatures14 March 2023
Recent advancements in semiconductor technology have demonstrated how silicon carbide (SiC) has several unique properties that make it a promising material for semiconductor devices with high temperature, high speed, and high voltage operation capabilities.
A Study of the Interelectrode Capacitances of SiC and GaN Power Semiconductor Devices Using Multiple Current Probes01 February 2023
This article describes the study of the interelectrode capacitances of SiC and GaN power semiconductor devices using multiple current probes. It is divided into four parts: two-current-probe method principle, measurement results, three-current-probe method principle, and measurement results.
Three-Phase WBG Resonant Converter Integrated with PCB Winding Transformer20 October 2023
Hello everyone, welcome to the new post today. An experiment was conducted to evaluate the performance of a three-phase CLLC bi-directional resonant converter designed for a 12.5 kW off-board charger in this article.
Power Converter with Inbuilt Charging technology using WBG Devices18 January 2024
Although plug-in electric vehicles (PEVs) have gained traction globally, reducing cost, weight, and volume, while enhancing power conversion efficiency in chargers remains crucial. PEVs, recognized by governments for curbing fossil fuel consumption and emissions, rely on sizable battery packs for substantial all-electric range coverage.
GaN-Based liquid-level UVsensors for Direct and Continuous Measurement10 May 2023
Hello everyone, welcome to the new post today. This post introduce an experiment which aim was to develop a liquid-level sensor using a GaN UV photodetector.
Discovering New and Advanced Methodology for Determining the Dynamic Characterization of Wide Bandgap Devices15 March 2024
For a long era, silicon has stood out as the primary material for fabricating electronic devices due to its affordability, moderate efficiency, and performance capabilities. Despite its widespread use, silicon faces several limitations that render it unsuitable for applications involving high power and elevated temperatures. As technological advancements continue and the industry demands enhanced efficiency from devices, these limitations become increasingly vivid. In the quest for electronic devices that are more potent, efficient, and compact, wide bandgap materials are emerging as a dominant player. Their superiority over silicon in crucial aspects such as efficiency, higher junction temperatures, power density, thinner drift regions, and faster switching speeds positions them as the preferred materials for the future of power electronics.
Increasing the Efficiency through Wide-Bandgap Semiconductors (SiC & GaN)24 October 2022
In recent times, complexity has been increasing in the devices due to the involvement of a huge number of components, which in turn invokes the need for more efficient power conversion. If devices are more efficient then it will reduce the cost of power input to the components and the environmental impact would be less.
Cryogenic Cooling Technology using SiC and GaN Devices07 July 2023
Hello everyone, welcome to the new post today. This article introduces the characteristics and challenges of WBG devices in cryogenic cooling applications and demonstrates their operation.
Effect Of Target Physical Properties And Energetic Ions When Doping Thin-Body Semiconductor19 October 2022
Multi-gate FET system has undergone tremendous advancements over the last decade and the biggest challenge for this system has been doping thin-body silicon. Ion implantation is a crucial enabler for multi-gate devices in the production of power semiconductor devices.