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Saumitra Jagdale
Saumitra Jagdale is a Backend Developer, Freelance Technical Author, Global AI Ambassador (SwissCognitive), Open-source Contributor in Python projects, Leader of Tensorflow Community India, and Passionate AI/ML Enthusiast
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Improving the Energy Conversion Efficiency of Triboelectric Nanogenerators19 November 2024
There is a huge growth in demand for self-sustaining electronic devices, as the traditional power-generating devices fail in remote and harsh environments due to the periodic requirement of battery changes. Also, these devices are frequency specific; some work only in high frequency and some in low frequency. Triboelectric nanogenerators (TENGs) provide a promising solution by efficiently converting mechanical energy into electricity as they are versatile, compact, and cheap, making them a popular choice.
A Study of the Interelectrode Capacitances of SiC and GaN Power Semiconductor Devices Using Multiple Current Probes01 February 2023
This article describes the study of the interelectrode capacitances of SiC and GaN power semiconductor devices using multiple current probes. It is divided into four parts: two-current-probe method principle, measurement results, three-current-probe method principle, and measurement results.
Advanced Aircraft Power Electronics Systems and Influence of Simulation, Standards, and Wide Band-Gap Devices18 February 2024
Wide bandgap (WBG) devices like Silicon Carbide (SiC) and Gallium Nitride (GaN) are revolutionizing aircraft power electronics by offering higher efficiency, faster switching speeds, and better high-temperature tolerance compared to traditional Silicon-based technologies. These advancements support the transition towards More Electric and All Electric Aircraft by improving power system performance, but challenges in integration, cost, and fabrication processes still require significant research and development efforts.
Using SiC-GaN to Create Two-Phase Interleaved DC-DC Converters for Plug-in Electric Vehicles03 February 2023
Hello everyone, welcome to the new post today. This post will introduyce using SiC-GaN to create two-phase interleaved DC-DC converters for plug-in electric vehicles.
A Hybrid SiC and GaN-Based DC-DC Converter for EVs20 September 2024
Across the globe, there is an increase in the usage of EVs, as they are an environmentally friendly way of commuting daily. The performance of these vehicles depends on the power electronics that manage the energy flow efficiently. On this front, there are two types of EVs, BEV (Battery Electric Vehicle) and HEV (Hybrid Electric Vehicle). Both types have a Plug-in variation equipped with a charging port to be connected to the power grid.
Discovering New and Advanced Methodology for Determining the Dynamic Characterization of Wide Bandgap Devices15 March 2024
For a long era, silicon has stood out as the primary material for fabricating electronic devices due to its affordability, moderate efficiency, and performance capabilities. Despite its widespread use, silicon faces several limitations that render it unsuitable for applications involving high power and elevated temperatures. As technological advancements continue and the industry demands enhanced efficiency from devices, these limitations become increasingly vivid. In the quest for electronic devices that are more potent, efficient, and compact, wide bandgap materials are emerging as a dominant player. Their superiority over silicon in crucial aspects such as efficiency, higher junction temperatures, power density, thinner drift regions, and faster switching speeds positions them as the preferred materials for the future of power electronics.
Increasing the Efficiency through Wide-Bandgap Semiconductors (SiC & GaN)24 October 2022
In recent times, complexity has been increasing in the devices due to the involvement of a huge number of components, which in turn invokes the need for more efficient power conversion. If devices are more efficient then it will reduce the cost of power input to the components and the environmental impact would be less.
Effect Of Target Physical Properties And Energetic Ions When Doping Thin-Body Semiconductor19 October 2022
Multi-gate FET system has undergone tremendous advancements over the last decade and the biggest challenge for this system has been doping thin-body silicon. Ion implantation is a crucial enabler for multi-gate devices in the production of power semiconductor devices.
Cryogenic Cooling Technology using SiC and GaN Devices07 July 2023
Hello everyone, welcome to the new post today. This article introduces the characteristics and challenges of WBG devices in cryogenic cooling applications and demonstrates their operation.
Devices based on Semiconductor Laser Chaos for Optical Communications22 February 2023
In modern electronics, although there have been countless developments in the field of optical communication, determining parameters like attenuation, free space path loss, etc has still been a significant issue.
Three-Phase WBG Resonant Converter Integrated with PCB Winding Transformer20 October 2023
Hello everyone, welcome to the new post today. An experiment was conducted to evaluate the performance of a three-phase CLLC bi-directional resonant converter designed for a 12.5 kW off-board charger in this article.
Power Converter with Inbuilt Charging technology using WBG Devices18 January 2024
Although plug-in electric vehicles (PEVs) have gained traction globally, reducing cost, weight, and volume, while enhancing power conversion efficiency in chargers remains crucial. PEVs, recognized by governments for curbing fossil fuel consumption and emissions, rely on sizable battery packs for substantial all-electric range coverage.