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STMicroelectronics MDmesh™ series Transistors - FETs, MOSFETs - Single

Introduction, stock information and FAQs of MDmesh™ series Single MOSFETs Transistors

In this post, you will learn features, applications, PDF datasheets, substitute products and the latest stock and pricing information of STMicroelectronics MDmesh™ series Single MOSFETs Transistors.

Applications

Lighting
Advanced driver assistance systems (ADAS)

Associated Products

Part Number	Description	Stock	RFQ
STFU24N60M2	MOSFET N-CH 600V 18A TO-220FP	400	RFQ
STI24N60M6	NCHANNEL 600 V 105 MOHM TYP. 22	151	RFQ
STW38N65M5-4	MOSFET N-CH 650V 30A TO247-4L	1334	RFQ
STWA75N60M6	N-CHANNEL 600 V 32 MOHM TYP. 72	10	RFQ
STWA68N60M6	N-CHANNEL 600 V 35 MOHM TYP. 63	9000	RFQ
STP130N8F7	MOSFET N-CHANNEL 80V 80A TO220	1000	RFQ
STWA70N65DM6	N-CHANNEL 650 V, 0.035 OHM TYP.,	53	RFQ
STH260N6F6-6	MOSFET POWER MOSFET	20000	RFQ
STFI13N95K3	MOSFET N CH 950V 10A I2PAKFP	4000	RFQ
STI34N65M5	MOSFET N-CH 650V 28A I2PAK	905	RFQ
STFI24NM60N	MOSFET N-Ch 600V 0.168 Ohm 17A MDmesh II	1207	RFQ
STI400N4F6	MOSFET N-CH 40V 120A I2PAK	913	RFQ
STP17N62K3	MOSFET N-CH 620V 15A TO-220	1002	RFQ
STWA75N60DM6	N-CHANNEL 600 V, 0.032 OHM TYP.,	40	RFQ
STL33N60DM6	N-CHANNEL 600 V, 125 MOHM TYP.,	0	RFQ
STH265N6F6-6AG	MOSFET N-CH 60V 180A H2PAK-6	20000	RFQ
STP140N4F6	MOSFET N-CHANNEL 40V 80A TO220	0	RFQ
STI20N60M2-EP	MOSFET N-CHANNEL 600V 13A TO220	0	RFQ
STW20N60M2-EP	MOSFET N-CHANNEL 600V 13A TO247	20000	RFQ
STFU14N80K5	N-CHANNEL 800 V, 0.400 OHM TYP.,	166000	RFQ

Technical Documents

Description

STMicroelectronics MDmesh™ series Transistors are a family of high-performance, low-voltage, low-on-resistance, and low-gate-charge MOSFETs and FETs. These transistors are designed to provide superior performance in a wide range of applications, including power management, motor control, and lighting. The MDmesh™ series transistors feature a unique structure that combines the best of both MOSFET and FET technologies, resulting in a device that offers superior performance and reliability. The MDmesh™ series transistors are available in a variety of packages, including TO-220, TO-252, and DPAK, and are suitable for a wide range of applications.

Features

1. Low on-resistance and low gate charge

2. High current capability

3. Low gate-source capacitance

4. Low gate-drain capacitance

5. Low input capacitance

6. Low output capacitance

7. High frequency operation

8. High avalanche energy capability

Applications

1. Switching power supplies

2. Motor control

3. Lighting control

4. Automotive applications

5. Battery management

6. DC-DC converters

7. Uninterruptible power supplies

8. Solar inverters

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Frequently Asked Questions

What are the Alternative Products of STMicroelectronics MDmesh™ series Transistors - FETs, MOSFETs - Single?

"1. Infineon OptiMOS™ series Transistors - FETs, MOSFETs - Single 2. ON Semiconductor N-Channel MOSFETs - Single 3. Vishay Siliconix N-Channel MOSFETs - Single 4. Texas Instruments NexFET™ Power MOSFETs - Single 5. Fairchild Semiconductor N-Channel MOSFETs - Single 6. ROHM Semiconductor N-Channel MOSFETs - Single 7. Diodes Incorporated N-Channel MOSFETs - Single 8. Toshiba N-Channel MOSFETs - Single 9. Renesas Electronics N-Channel MOSFETs - Single 10. STMicroelectronics N-Channel MOSFETs - Single"

What are the differences between the types of STMicroelectronics MDmesh™ series Transistors - FETs, MOSFETs - Single?

"STMicroelectronics MDmesh™ FETs are a family of high-voltage, low-on-resistance, low-gate-charge, low-capacitance, and low-inductance power MOSFETs. They are designed to provide superior performance in high-frequency switching applications.  STMicroelectronics MDmesh™ MOSFETs are a family of high-voltage, low-on-resistance, low-gate-charge, low-capacitance, and low-inductance power MOSFETs. They are designed to provide superior performance in high-frequency switching applications.  The main difference between the two types of STMicroelectronics MDmesh™ series transistors is that FETs are Field Effect Transistors, while MOSFETs are Metal Oxide Semiconductor Field Effect Transistors. FETs are unipolar devices, meaning they only conduct current in one direction, while MOSFETs are bipolar devices, meaning they can conduct current in both directions. FETs are also more efficient than MOSFETs, as they require less power to operate. Additionally, FETs are more suitable for high-frequency switching applications, while MOSFETs are better suited for low-frequency switching applications."