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Examining the performance of SiC inverter and DC-DC Converter Systems over Si21 March 2023
Hello everyone, welcome to the new post today. This posts introduce the industrial drives used in low-voltage applications (<1000V) for power semiconductors.
SiC Power Conversion Devices at High Ambient Temperatures14 March 2023
Recent advancements in semiconductor technology have demonstrated how silicon carbide (SiC) has several unique properties that make it a promising material for semiconductor devices with high temperature, high speed, and high voltage operation capabilities.
Si vs SiC Diodes: A Performance Study of Interleaved Boost Converters for PV Applications14 March 2023
Hello everyone, welcome to the new post today.
Comparative Analysis of Si and SiC Devices for EV Traction Inverters10 March 2023
Hello everyone, welcome to the new post today. In this article, we aim to study the characteristics, compare the methods to calculate the power losses in thermal models and understand the power consumption and chip area required for different Si and SiC devices through the simulation of an NEDC vehicle with set parameters.
Silicon Carbide: The Future of Power Electronics06 March 2023
Silicon-based power-switching devices have made it possible for systems to produce more power while operating at a higher efficiency thanks to the development of MOSFETs and IGBTs. This article mainly introduces the features and advantages of SiC over Si, the operation of SiC devices, and the characteristics of various SiC power devices.
Devices based on Semiconductor Laser Chaos for Optical Communications22 February 2023
In modern electronics, although there have been countless developments in the field of optical communication, determining parameters like attenuation, free space path loss, etc has still been a significant issue.
Clock&Timing - Application Specific: A Dedicated Chip That Helps Produce Signals on the Circuit Board22 February 2023
Static timing analyses include register-to-register analysis, I/O analysis, and asynchronous reset analysis. To verify circuit performance and detect timing violations, the Timing Analyzer uses data required times, data arrival times, and clock arrival times. In order to verify circuit performance and detect possible timing violations, the Timing Analyzer uses data arrival times, data required times, and clock arrival times. For the design to function correctly, the Timing Analyzer determines timing relationships and compares arrival times against required times.
A Practical Methodology to Simulate 4H-SiC and GaN p-n Diodes with Model Parameter Adjustment in Medici07 February 2023
Hello everyone, welcome to the new post today. In this article, we present the simulation of 4H-SiC and GaN p-n diodes using the modified parameters as adjustments in Medici.
Efficiency-Related Issues in GaN and SiC Power Systems06 February 2023
This paper presents the efficiency-related issues of GaN and SiC power systems in two parts: Reliability in GaN Power Devices and Reliability in SiC Power Devices.
Using SiC-GaN to Create Two-Phase Interleaved DC-DC Converters for Plug-in Electric Vehicles03 February 2023
Hello everyone, welcome to the new post today. This post will introduyce using SiC-GaN to create two-phase interleaved DC-DC converters for plug-in electric vehicles.
A Study of the Interelectrode Capacitances of SiC and GaN Power Semiconductor Devices Using Multiple Current Probes01 February 2023
This article describes the study of the interelectrode capacitances of SiC and GaN power semiconductor devices using multiple current probes. It is divided into four parts: two-current-probe method principle, measurement results, three-current-probe method principle, and measurement results.
Transfer Learning Method for detailed defect classification in semiconductor manufacturing based on Convolution Neural Network13 January 2023
Based on certain tests, the convolutional neural network(CNN) transfer learning method (a deep learning technology) was considered the best method for defect classification.

