The LMG1205 is a 100-V, 1.2-A to 5-A, Half Bridge GaN Driver with Integrated Bootstrap Diode. It is designed to drive both the high-side and the low-side enhancement mode Gallium Nitride (GaN) FETs in a synchronous buck, boost, or half-bridge configuration. The device has an integrated 100-V bootstrap diode and independent inputs for the high-side and low-side outputs for maximum control flexibility
Texas Instruments LMG1205 series Gate Drivers ICs
Comprehensive Guide to LMG1205 Integrated Circuits (ICs) Gate Drivers ICs
This post introduces you to the Key Component Features, Diverse Applications, Associated Series Parts, Technical Documents(PDF Datasheets, User Guides), Frequently asked questions, and Related Series of Texas Instruments LMG1205 series Gate Drivers ICs products.
FEATURES
- Independent high-side and low-side TTL logic inputs
- 1.2-A peak source, 5-A sink current
Applications
- Power delivery
- Motor drives
Associated Products
| Part Number | Description | Stock | RFQ |
|---|---|---|---|
| LMG1205YFXR | IC GATE DRVR HALF-BRIDGE 12DSBGA | 9000 | BUY |
| LMG1205YFXT | LMG1205YFXT | 1990 | BUY |
Technical Documents
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Frequently Asked Questions
What are the similar products or Substitute Components of Texas Instruments LMG1205 series Gate Drivers ICs
Infineon Technologies EiceDRIVER™: Infineon offers a range of gate driver ICs suitable for driving GaN power switches, such as the EiceDRIVER™ family. These gate drivers provide high-speed switching, protection features, and compatibility with various GaN devices. Analog Devices (ADI) ADuM4135: ADI's ADuM4135 gate driver is designed for driving GaN power switches. It offers high-speed switching capability, high noise immunity, and protection features. The ADuM4135 is compatible with a wide range of GaN devices and can be used in various power electronics applications. Maxim Integrated MAX22701E: Maxim Integrated's MAX22701E gate driver is specifically designed for GaN power switches. It provides high-speed switching, adjustable dead time control, and protection features. The MAX22701E is suitable for applications requiring high-frequency and high-voltage switching.
Can you tell me more about Gallium Nitride FETs?
Gallium Nitride (GaN) FETs are revolutionizing the power engineering world by enabling high-speed, increased efficiency, and higher power density never before possible with silicon MOSFETs