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ToolsIRF644 alternative parts: IRF6646TRPBF
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| Part Number | ||
| Manufacturer: | ||
| Description: | MOSFET N-CH 250V 14A TO-220AB | MOSFET N-CH 80V 12A DIRECTFET |
Mount: | Through Hole | Surface Mount |
Mounting Type: | Through Hole | Surface Mount |
Package / Case: | TO-220-3 | DirectFET™ Isometric MN |
Number of Pins: | 3 | 5 |
Supplier Device Package: | TO-220AB | - |
Weight: | 6.000006g | - |
Current - Continuous Drain (Id) @ 25℃: | 14A Tc | 12A Ta 68A Tc |
Drive Voltage (Max Rds On, Min Rds On): | 10V | 10V |
Number of Elements: | 1 | 1 |
Power Dissipation (Max): | 125W Tc | 2.8W Ta 89W Tc |
Turn Off Delay Time: | 53 ns | 31 ns |
Operating Temperature: | -55°C~150°C TJ | -40°C~150°C TJ |
Packaging: | Tube | Tape & Reel (TR) |
Published: | 2011 | 2006 |
Part Status: | Obsolete | Active |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) | 1 (Unlimited) |
Max Operating Temperature: | 150°C | - |
Min Operating Temperature: | -55°C | - |
Voltage - Rated DC: | 250V | 80V |
Current Rating: | 14A | 12A |
Number of Channels: | 1 | - |
Element Configuration: | Single | - |
Power Dissipation: | 125W | 89W |
Turn On Delay Time: | 11 ns | 17 ns |
FET Type: | N-Channel | N-Channel |
Rds On (Max) @ Id, Vgs: | 280mOhm @ 8.4A, 10V | 9.5m Ω @ 12A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250μA | 4.9V @ 150μA |
Input Capacitance (Ciss) (Max) @ Vds: | 1300pF @ 25V | 2060pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs: | 68nC @ 10V | 50nC @ 10V |
Rise Time: | 24ns | 20ns |
Drain to Source Voltage (Vdss): | 250V | - |
Vgs (Max): | ±20V | ±20V |
Fall Time (Typ): | 49 ns | 12 ns |
Continuous Drain Current (ID): | 14A | 12mA |
Gate to Source Voltage (Vgs): | 20V | 20V |
Drain to Source Breakdown Voltage: | 250V | 80V |
Input Capacitance: | 1.3nF | - |
Drain to Source Resistance: | 280mOhm | - |
Rds On Max: | 280 mΩ | - |
Height: | 9.01mm | 506μm |
Length: | 10.41mm | 6.35mm |
Width: | 4.7mm | 5.05mm |
Radiation Hardening: | No | No |
RoHS Status: | Non-RoHS Compliant | ROHS3 Compliant |
Lead Free: | Lead Free | Lead Free |
Factory Lead Time: | - | 12 Weeks |
Transistor Element Material: | - | SILICON |
Series: | - | HEXFET® |
JESD-609 Code: | - | e1 |
Number of Terminations: | - | 3 |
ECCN Code: | - | EAR99 |
Terminal Finish: | - | Tin/Silver/Copper (Sn/Ag/Cu) |
Terminal Position: | - | BOTTOM |
JESD-30 Code: | - | R-XBCC-N3 |
Configuration: | - | SINGLE WITH BUILT-IN DIODE |
Operating Mode: | - | ENHANCEMENT MODE |
Case Connection: | - | DRAIN |
Transistor Application: | - | SWITCHING |
Threshold Voltage: | - | 4.9V |
Drain Current-Max (Abs) (ID): | - | 68A |
Pulsed Drain Current-Max (IDM): | - | 96A |
Avalanche Energy Rating (Eas): | - | 230 mJ |
REACH SVHC: | - | No SVHC |
IRF644
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