2SC2229 BJT NPN Transistor: Datasheet pdf, Pinout and 2SC2229 Equivalents
TRANS NPN 50MA 150V TO226-3
2SC2229 is a BJT NPN transistor available in TO-92L or TO-92MOD package but with some manufacturers, it is also available in the TO-92 package. This article is going to explain details about the 2SC2229 transistor.

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What is 2SC2229?
2SC2229 is a BJT NPN transistor available in TO-92L or TO-92MOD package but with some manufacturers, it is also available in the TO-92 package. It's an NPN triple diffused transistor; they are transistors that are manufactured by diffusing dopants. The transistor has several desirable characteristics, including the ability to operate at high voltage s of up to 150V, a low output capacitance, and a transition frequency of up to 120MHz.
The transistor's collector current maximum is 50mA. To drive a 50mA load, the maximum voltage required for transistor saturation at its base is merely 0.5V with only 5mA of base current. The output capacitance at the collector is 3.5pF to 5pF, with an 800 mill watt collector dissipation maximum.
2SC2229 Pinout

2SC2229 Pinout
2SC2229 CAD Model

2SC2229 Footprint
Specifications
- TypeParameter
- Mounting Type
The "Mounting Type" in electronic components refers to the method used to attach or connect a component to a circuit board or other substrate, such as through-hole, surface-mount, or panel mount.
Through Hole - Package / Case
refers to the protective housing that encases an electronic component, providing mechanical support, electrical connections, and thermal management.
TO-226-3, TO-92-3 Long Body - Current-Collector (Ic) (Max)50mA
- Operating Temperature
The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.
150°C TJ - Packaging
Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.
Bulk - Published2009
- Part Status
Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.
Obsolete - Moisture Sensitivity Level (MSL)
Moisture Sensitivity Level (MSL) is a standardized rating that indicates the susceptibility of electronic components, particularly semiconductors, to moisture-induced damage during storage and the soldering process, defining the allowable exposure time to ambient conditions before they require special handling or baking to prevent failures
1 (Unlimited) - Power - Max
Power - Max is a parameter that specifies the maximum amount of power that an electronic component can handle without being damaged. It is typically measured in watts and indicates the upper limit of power that can be safely supplied to the component. Exceeding the maximum power rating can lead to overheating, malfunction, or permanent damage to the component. It is important to consider the power-max rating when designing circuits or systems to ensure proper operation and longevity of the electronic components.
800mW - Transistor Type
Transistor type refers to the classification of transistors based on their operation and construction. The two primary types are bipolar junction transistors (BJTs) and field-effect transistors (FETs). BJTs use current to control the flow of current, while FETs utilize voltage to control current flow. Each type has its own subtypes, such as NPN and PNP for BJTs, and MOSFETs and JFETs for FETs, impacting their applications and characteristics in electronic circuits.
NPN - DC Current Gain (hFE) (Min) @ Ic, Vce
The parameter "DC Current Gain (hFE) (Min) @ Ic, Vce" in electronic components refers to the minimum value of the DC current gain, denoted as hFE, under specific operating conditions of collector current (Ic) and collector-emitter voltage (Vce). The DC current gain hFE represents the ratio of the collector current to the base current in a bipolar junction transistor (BJT), indicating the amplification capability of the transistor. The minimum hFE value at a given Ic and Vce helps determine the transistor's performance and efficiency in amplifying signals within a circuit. Designers use this parameter to ensure proper transistor selection and performance in various electronic applications.
70 @ 10mA 5V - Current - Collector Cutoff (Max)
The parameter "Current - Collector Cutoff (Max)" refers to the maximum current at which a transistor or other electronic component will cease to conduct current between the collector and emitter terminals. This parameter is important in determining the maximum current that can flow through the component when it is in the cutoff state. Exceeding this maximum cutoff current can lead to malfunction or damage of the component. It is typically specified in the component's datasheet and is crucial for proper circuit design and operation.
100nA ICBO - Vce Saturation (Max) @ Ib, Ic
The parameter "Vce Saturation (Max) @ Ib, Ic" in electronic components refers to the maximum voltage drop across the collector-emitter junction when the transistor is in saturation mode. This parameter is specified at a certain base current (Ib) and collector current (Ic) levels. It indicates the minimum voltage required to keep the transistor fully conducting in saturation mode, ensuring that the transistor operates efficiently and does not enter the cutoff region. Designers use this parameter to ensure proper transistor operation and to prevent overheating or damage to the component.
500mV @ 1mA, 10mA - Voltage - Collector Emitter Breakdown (Max)
Voltage - Collector Emitter Breakdown (Max) is a parameter that specifies the maximum voltage that can be applied between the collector and emitter terminals of a transistor or other semiconductor device before it breaks down and allows excessive current to flow. This parameter is crucial for ensuring the safe and reliable operation of the component within its specified limits. Exceeding the maximum breakdown voltage can lead to permanent damage or failure of the device. Designers and engineers must carefully consider this parameter when selecting components for their circuits to prevent potential issues and ensure proper functionality.
150V - Frequency - Transition
The parameter "Frequency - Transition" in electronic components refers to the maximum frequency at which a signal transition can occur within the component. It is a crucial specification for digital circuits as it determines the speed at which data can be processed and transmitted. A higher frequency transition allows for faster operation and better performance of the electronic component. It is typically measured in hertz (Hz) or megahertz (MHz) and is specified by the manufacturer to ensure proper functioning of the component within a given frequency range.
120MHz
2SC2229 Features
Type: NPN
Collector-Emitter Voltage: 150 V
Collector-Base Voltage: 200 V
Emitter-Base Voltage: 5 V
Collector Current: 0.05 A
Collector Dissipation: 0.8 W
DC Current Gain (hfe): 70 to 240
Transition Frequency: 120 MHz
Operating and Storage Junction Temperature Range: -55 to +150 °C
Package: TO-92MOD
High breakdown voltage : VCEO = 150 V (min)
Low output capacitance: Cob = 5.0 pF (max)
High transition frequency : fT = 120 MHz (typ.)
Equivalents and Replacements for 2SC2229
2SC2310, 2SC3467, 2SC3468, 3DG2229, KSC2310, KTC1026, 2SC3228, BF422, KSC1506, KTC3206
2SC2229 Applications
Audio Amplifiers
Audio Amplifier Driver Stages
High Voltage Applications
Radio and RF Circuits
Switching loads under 50mA
Where and how to use 2SC2229
The 2SC2229 transistor can be utilized for a wide range of applications. It can be employed in high voltage applications due to its high collector to emitter voltage, It's also suitable for a wide range of audio amplification and driver circuits. It's also suitable for use in black-and-white video circuits. This transistor. with a maximum transition frequency of 120MHz, can also be used in RF circuits below 120MHz, such as AM and FM broadcast and receiving circuits.
How to run 2SC2229 circuit safely?
It is recommended that when using the 2SC2229 transistor. you do not use it to its absolute maximum ratings and instead, stay 20 percent below these maximum ratings. The transistor's maximum collector current is 50mA. so do not drive loads that draw more than 40mA. The transistor's maximum collector to emitter voltage is 150V, so the load voltage should be under 120V, and the transistor should always be used or stored at temperatures between -55 and +150 degrees Celsius.
2SC2229 Package Outline

2SC2229 Package Outline
2SC2229 Manufacturer
Toshiba Semiconductor & Storage offers a broad range of enabling technology solutions that allow OEMs, ODMs, CMs, and fabless chip companies to develop advanced integrated products for computing, networking, and communications, and digital consumer, automotive, and other markets.
Datasheet PDF
- Datasheets :
What is 2SC2229 used for?
The 2SC2229 is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring equipment, industrial robots, and home electronics appliances) or for specific applications as expressly stated in this document.
The 2SC2229 is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document.
Its voltage is 200v.
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