STP55NF06 Power MOSFET: Pinout, Datasheet, Equivalent
N-Channel Tube 18m Ω @ 27.5A, 10V ±20V 1300pF @ 25V 60nC @ 10V TO-220-3
The STP55NF06 MOSFET is an N-channel power MOSFET. This article will cover its pinout, datasheet, equivalent and more detailed information about STP55NF06. Welcome your RFQ!

N-Channel MOSFET as a Switch. Turn ON a 12V Motor with Arduino.
The overview of STP55NF06
The STP55NF06 MOSFET is an N-channel power MOSFET with a wide range of applications. This MOSFET is notable for its high drain current and fast switching speed, as well as its low on-resistance, which boosts the device's efficiency. According to the datasheet, this MOSFET will begin to conduct at a low gate voltage of 10V, but it will reach its maximum drain current at a gate voltage of 20V. This MOSFET can be driven by a microcontroller or a logic-level device because it is designed for high-power applications.
Because this MOSFET has a low gate threshold voltage of only 4V, it can be turned on using just 5V from a GPIO pin on a microcontroller like the Arduino. However, this does not imply that the MOSFET will come on completely with just 5V; it requires roughly 10V to switch on completely and deliver a continuous current of 27A. If you're looking for a MOSFET to utilize with a microcontroller, logic-level MOSFETs like the 2N7002 or IRLZ44N are a good choice. Alternatively, you can use a transistor and a driver circuit to provide 10V to the gate pin of this MOSFET. The frequency response of this MOSFET is quite good hence it can be used in DC-DC converter circuits also.
Because the MOSFET is made up of a capacitor, there will be no voltage in the gate under normal circumstances and without external influence, which is why we need to pull the gate of the MOSFET to the ground to prevent false triggering of the circuit. As we all know, MOSFETs are voltage-controlled devices, which means that to turn them off, we only need to provide voltage to the gate and no current should flow through the MOSFET.
STP55NF06 Pinout

STP55NF06 Pinout
STP55NF06 CAD Model
Symbol

STP55NF06 Symbol
Footprint

STP55NF06 Footprint
3D Model

STP55NF06 3D Model
STP55NF06 Feature
N-Channel Power MOSFET
Continuous Drain Current (ID): 35A
Pulsed Drain Current (ID-peak) is 50A
Drain to Source Breakdown Voltage: 60V
Drain Source Resistance (RDS) is 0.018 Ohms
The gate threshold voltage (VGS-th) is 20V (max)
Rise time and the fall time is 50nS and 15nS
Input Capacitance 1300pF
Output Capacitance 300pF
Available in To-220 package
STP55NF06 Application
Use in Electric Power Steering (EPS)
Use in Anti-locking Braking System (ABS)
Use in Wiper Control
Use in Climate Control
Use in Power Door
STP55NF06 Test Circuit
The following figure shows the test circuit of STP55NF06:

STP55NF06-Switching times test circuit for resistive load

STP55NF06-Gate charge test circuit
How to Use STP55NF06 MOSFET?
Because MOSFETs are voltage-controlled devices, only a minimum voltage is required to switch them on. The gate turn-on voltage for the STP55NF06 MOSFET is just 4V because it is an N-channel MOSFET, which means it will be on when the MOSFET's gate is linked to the supply's VCC and off when it is pulled down or connected to the ground.
The simulated circuit below shows how this MOSFET operates when the basic circuit's gate is connected to the ground and when the power supply's VCC is connected to it.

STP55NF06 Circuit
When we connect the gate to the supply to switch on the MOSFET, it will stay on until the gate voltage of the MOSFET falls below the threshold voltage of the MOSFET. This voltage is less than 4V for this STP55NF06 MOSFET; below this voltage, the MOSFET will be in its ohmic state, and no current will flow through the device. As previously stated, the gate of the MOSFET should be linked to the ground using a pull-down resistor. In the example circuit, a 10K resistor is used to pull down the MOSFET's gate to the ground.
Specifications
- TypeParameter
- Lifecycle Status
Lifecycle Status refers to the current stage of an electronic component in its product life cycle, indicating whether it is active, obsolete, or transitioning between these states. An active status means the component is in production and available for purchase. An obsolete status indicates that the component is no longer being manufactured or supported, and manufacturers typically provide a limited time frame for support. Understanding the lifecycle status is crucial for design engineers to ensure continuity and reliability in their projects.
ACTIVE (Last Updated: 8 months ago) - Factory Lead Time12 Weeks
- Mount
In electronic components, the term "Mount" typically refers to the method or process of physically attaching or fixing a component onto a circuit board or other electronic device. This can involve soldering, adhesive bonding, or other techniques to secure the component in place. The mounting process is crucial for ensuring proper electrical connections and mechanical stability within the electronic system. Different components may have specific mounting requirements based on their size, shape, and function, and manufacturers provide guidelines for proper mounting procedures to ensure optimal performance and reliability of the electronic device.
Through Hole - Mounting Type
The "Mounting Type" in electronic components refers to the method used to attach or connect a component to a circuit board or other substrate, such as through-hole, surface-mount, or panel mount.
Through Hole - Package / Case
refers to the protective housing that encases an electronic component, providing mechanical support, electrical connections, and thermal management.
TO-220-3 - Number of Pins3
- Weight4.535924g
- Transistor Element Material
The "Transistor Element Material" parameter in electronic components refers to the material used to construct the transistor within the component. Transistors are semiconductor devices that amplify or switch electronic signals and are a fundamental building block in electronic circuits. The material used for the transistor element can significantly impact the performance and characteristics of the component. Common materials used for transistor elements include silicon, germanium, and gallium arsenide, each with its own unique properties and suitability for different applications. The choice of transistor element material is crucial in designing electronic components to meet specific performance requirements such as speed, power efficiency, and temperature tolerance.
SILICON - Current - Continuous Drain (Id) @ 25℃50A Tc
- Drive Voltage (Max Rds On, Min Rds On)10V
- Number of Elements1
- Power Dissipation (Max)110W Tc
- Turn Off Delay Time
It is the time from when Vgs drops below 90% of the gate drive voltage to when the drain current drops below 90% of the load current. It is the delay before current starts to transition in the load, and depends on Rg. Ciss.
36 ns - Operating Temperature
The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.
-55°C~175°C TJ - Packaging
Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.
Tube - Series
In electronic components, the "Series" refers to a group of products that share similar characteristics, designs, or functionalities, often produced by the same manufacturer. These components within a series typically have common specifications but may vary in terms of voltage, power, or packaging to meet different application needs. The series name helps identify and differentiate between various product lines within a manufacturer's catalog.
STripFET™ II - JESD-609 Code
The "JESD-609 Code" in electronic components refers to a standardized marking code that indicates the lead-free solder composition and finish of electronic components for compliance with environmental regulations.
e3 - Part Status
Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.
Active - Moisture Sensitivity Level (MSL)
Moisture Sensitivity Level (MSL) is a standardized rating that indicates the susceptibility of electronic components, particularly semiconductors, to moisture-induced damage during storage and the soldering process, defining the allowable exposure time to ambient conditions before they require special handling or baking to prevent failures
1 (Unlimited) - Number of Terminations3
- ECCN Code
An ECCN (Export Control Classification Number) is an alphanumeric code used by the U.S. Bureau of Industry and Security to identify and categorize electronic components and other dual-use items that may require an export license based on their technical characteristics and potential for military use.
EAR99 - Resistance
Resistance is a fundamental property of electronic components that measures their opposition to the flow of electric current. It is denoted by the symbol "R" and is measured in ohms (Ω). Resistance is caused by the collisions of electrons with atoms in a material, which generates heat and reduces the flow of current. Components with higher resistance will impede the flow of current more than those with lower resistance. Resistance plays a crucial role in determining the behavior and functionality of electronic circuits, such as limiting current flow, voltage division, and controlling power dissipation.
18mOhm - Terminal Finish
Terminal Finish refers to the surface treatment applied to the terminals or leads of electronic components to enhance their performance and longevity. It can improve solderability, corrosion resistance, and overall reliability of the connection in electronic assemblies. Common finishes include nickel, gold, and tin, each possessing distinct properties suitable for various applications. The choice of terminal finish can significantly impact the durability and effectiveness of electronic devices.
Matte Tin (Sn) - Voltage - Rated DC
Voltage - Rated DC is a parameter that specifies the maximum direct current (DC) voltage that an electronic component can safely handle without being damaged. This rating is crucial for ensuring the proper functioning and longevity of the component in a circuit. Exceeding the rated DC voltage can lead to overheating, breakdown, or even permanent damage to the component. It is important to carefully consider this parameter when designing or selecting components for a circuit to prevent any potential issues related to voltage overload.
60V - Current Rating
Current rating is the maximum current that a fuse will carry for an indefinite period without too much deterioration of the fuse element.
50A - Base Part Number
The "Base Part Number" (BPN) in electronic components serves a similar purpose to the "Base Product Number." It refers to the primary identifier for a component that captures the essential characteristics shared by a group of similar components. The BPN provides a fundamental way to reference a family or series of components without specifying all the variations and specific details.
STP55N - Pin Count
a count of all of the component leads (or pins)
3 - Element Configuration
The distribution of electrons of an atom or molecule (or other physical structure) in atomic or molecular orbitals.
Single - Operating Mode
A phase of operation during the operation and maintenance stages of the life cycle of a facility.
ENHANCEMENT MODE - Power Dissipation
the process by which an electronic or electrical device produces heat (energy loss or waste) as an undesirable derivative of its primary action.
30W - Turn On Delay Time
Turn-on delay, td(on), is the time taken to charge the input capacitance of the device before drain current conduction can start.
20 ns - FET Type
"FET Type" refers to the type of Field-Effect Transistor (FET) being used in an electronic component. FETs are three-terminal semiconductor devices that can be classified into different types based on their construction and operation. The main types of FETs include Metal-Oxide-Semiconductor FETs (MOSFETs), Junction FETs (JFETs), and Insulated-Gate Bipolar Transistors (IGBTs).Each type of FET has its own unique characteristics and applications. MOSFETs are commonly used in digital circuits due to their high input impedance and low power consumption. JFETs are often used in low-noise amplifiers and switching circuits. IGBTs combine the high input impedance of MOSFETs with the high current-carrying capability of bipolar transistors, making them suitable for high-power applications like motor control and power inverters.When selecting an electronic component, understanding the FET type is crucial as it determines the device's performance and suitability for a specific application. It is important to consider factors such as voltage ratings, current handling capabilities, switching speeds, and power dissipation when choosing the right FET type for a particular circuit design.
N-Channel - Transistor Application
In the context of electronic components, the parameter "Transistor Application" refers to the specific purpose or function for which a transistor is designed and used. Transistors are semiconductor devices that can amplify or switch electronic signals and are commonly used in various electronic circuits. The application of a transistor can vary widely depending on its design and characteristics, such as whether it is intended for audio amplification, digital logic, power control, or radio frequency applications. Understanding the transistor application is important for selecting the right type of transistor for a particular circuit or system to ensure optimal performance and functionality.
SWITCHING - Rds On (Max) @ Id, Vgs
Rds On (Max) @ Id, Vgs refers to the maximum on-resistance of a MOSFET or similar transistor when it is fully turned on or in the saturation region. It is specified at a given drain current (Id) and gate-source voltage (Vgs). This parameter indicates how much resistance the component will offer when conducting, impacting power loss and efficiency in a circuit. Lower Rds On values are preferred for better performance in switching applications.
18m Ω @ 27.5A, 10V - Vgs(th) (Max) @ Id
The parameter "Vgs(th) (Max) @ Id" in electronic components refers to the maximum gate-source threshold voltage at a specified drain current (Id). This parameter is commonly found in field-effect transistors (FETs) and is used to define the minimum voltage required at the gate terminal to turn on the transistor and allow current to flow from the drain to the source. The maximum value indicates the upper limit of this threshold voltage under specified operating conditions. It is an important parameter for determining the proper biasing and operating conditions of the FET in a circuit to ensure proper functionality and performance.
4V @ 250μA - Input Capacitance (Ciss) (Max) @ Vds
The parameter "Input Capacitance (Ciss) (Max) @ Vds" in electronic components refers to the maximum input capacitance measured at a specific drain-source voltage (Vds). Input capacitance is a crucial parameter in field-effect transistors (FETs) and power MOSFETs, as it represents the total capacitance at the input terminal of the device. This capacitance affects the device's switching speed and overall performance, as it influences the time required for charging and discharging during operation. Manufacturers provide this parameter to help designers understand the device's input characteristics and make informed decisions when integrating it into a circuit.
1300pF @ 25V - Gate Charge (Qg) (Max) @ Vgs
Gate Charge (Qg) (Max) @ Vgs refers to the maximum amount of charge that must be supplied to the gate of a MOSFET or similar device to fully turn it on, measured at a specific gate-source voltage (Vgs). This parameter is crucial for understanding the switching characteristics of the device, as it influences the speed at which the gate can charge and discharge. A higher gate charge value often implies slower switching speeds, which can impact the efficiency of high-frequency applications. This parameter is typically specified in nanocoulombs (nC) in the component's datasheet.
60nC @ 10V - Rise Time
In electronics, when describing a voltage or current step function, rise time is the time taken by a signal to change from a specified low value to a specified high value.
50ns - Vgs (Max)
Vgs (Max) refers to the maximum gate-source voltage that can be applied to a field-effect transistor (FET) without causing damage to the component. This parameter is crucial in determining the safe operating limits of the FET and helps prevent overvoltage conditions that could lead to device failure. Exceeding the specified Vgs (Max) rating can result in breakdown of the gate oxide layer, leading to permanent damage to the FET. Designers must ensure that the applied gate-source voltage does not exceed the maximum rating to ensure reliable and long-term operation of the electronic component.
±20V - Fall Time (Typ)
Fall Time (Typ) is a parameter used to describe the time it takes for a signal to transition from a high level to a low level in an electronic component, such as a transistor or an integrated circuit. It is typically measured in nanoseconds or microseconds and is an important characteristic that affects the performance of the component in digital circuits. A shorter fall time indicates faster switching speeds and can result in improved overall circuit performance, such as reduced power consumption and increased data transmission rates. Designers often consider the fall time specification when selecting components for their circuits to ensure proper functionality and efficiency.
15 ns - Continuous Drain Current (ID)
Continuous Drain Current (ID) is a key parameter in electronic components, particularly in field-effect transistors (FETs) such as MOSFETs. It refers to the maximum current that can flow continuously through the drain terminal of the FET without causing damage to the component. This parameter is crucial for determining the power handling capability of the FET and is specified by the manufacturer in the component's datasheet. Designers must ensure that the actual operating current does not exceed the specified Continuous Drain Current to prevent overheating and potential failure of the component.
50A - Threshold Voltage
The threshold voltage is a critical parameter in electronic components, particularly in field-effect transistors (FETs). It refers to the minimum voltage required at the input terminal of the FET to turn it on and allow current to flow between the source and drain terminals. Below the threshold voltage, the FET remains in the off state, acting as an open switch. Once the threshold voltage is exceeded, the FET enters the on state, conducting current between the source and drain.The threshold voltage is a key factor in determining the operating characteristics of FETs, such as their switching speed and power consumption. It is typically specified by the manufacturer and can vary depending on the specific type of FET and its design. Designers must consider the threshold voltage when selecting FETs for a particular application to ensure proper functionality and performance.
3V - JEDEC-95 Code
JEDEC-95 Code is a standardized identification system used by the Joint Electron Device Engineering Council to categorize and describe semiconductor devices. This code provides a unique alphanumeric identifier for various memory components, ensuring consistency in documentation and communication across the electronics industry. The format includes information about the type, capacity, and technology of the device, facilitating easier specification and understanding for manufacturers and engineers.
TO-220AB - Gate to Source Voltage (Vgs)
The Gate to Source Voltage (Vgs) is a crucial parameter in electronic components, particularly in field-effect transistors (FETs) such as MOSFETs. It refers to the voltage difference between the gate and source terminals of the FET. This voltage determines the conductivity of the FET and controls the flow of current through the device. By varying the Vgs, the FET can be switched on or off, allowing for precise control of electronic circuits. Understanding and properly managing the Vgs is essential for ensuring the reliable and efficient operation of FET-based circuits.
20V - Drain Current-Max (Abs) (ID)
The parameter "Drain Current-Max (Abs) (ID)" in electronic components refers to the maximum current that can flow from the drain to the source terminal of a field-effect transistor (FET) or a similar device. It is a crucial specification that indicates the maximum current handling capability of the component before it reaches its saturation point or gets damaged. This parameter is typically specified in amperes (A) and helps designers ensure that the component can safely handle the expected current levels in a circuit without exceeding its limits. It is important to consider this parameter when designing circuits to prevent overloading the component and ensure reliable operation.
55A - Drain to Source Breakdown Voltage
Drain to Source Breakdown Voltage, often denoted as V(BR) D-S, is a critical parameter in electronic components, particularly in field-effect transistors (FETs) and metal-oxide-semiconductor FETs (MOSFETs). It represents the maximum voltage that can be applied between the drain and source terminals of the device without causing breakdown or permanent damage. Exceeding this voltage can lead to excessive current flow, resulting in thermal failure or destruction of the component. It is essential for ensuring reliable operation in circuit designs where high voltages may be encountered.
60V - Pulsed Drain Current-Max (IDM)
The parameter "Pulsed Drain Current-Max (IDM)" in electronic components refers to the maximum current that the device can handle when operated under pulsed conditions. This specification is important for understanding the device's capability to handle short bursts of high current without causing damage. It is typically measured in amperes and is specified for a specific pulse width and duty cycle. Designers use this parameter to ensure that the component can withstand transient current spikes without failing, making it crucial for applications where pulsed operation is common, such as in power electronics and RF circuits.
200A - Dual Supply Voltage
Dual Supply Voltage refers to an electronic component's requirement for two separate power supply voltages, typically one positive and one negative. This configuration is commonly used in operational amplifiers, analog circuits, and certain digital devices to allow for greater signal handling capabilities and improved performance. The use of dual supply voltages enables the device to process bipolar signals, thereby enhancing its functionality in various applications.
60V - Nominal Vgs
Nominal Vgs refers to the standard or expected gate-source voltage in field-effect transistors (FETs) and other related electronic components. It represents the voltage level at which the transistor operates optimally, ensuring proper switching characteristics and performance. This parameter is crucial for designers to determine the appropriate control signals required for efficient operation of the device in circuits. Variations from the nominal Vgs can affect the performance and reliability of the component.
3 V - Height9.15mm
- Length10.4mm
- Width4.6mm
- REACH SVHC
The parameter "REACH SVHC" in electronic components refers to the compliance with the Registration, Evaluation, Authorization, and Restriction of Chemicals (REACH) regulation regarding Substances of Very High Concern (SVHC). SVHCs are substances that may have serious effects on human health or the environment, and their use is regulated under REACH to ensure their safe handling and minimize their impact.Manufacturers of electronic components need to declare if their products contain any SVHCs above a certain threshold concentration and provide information on the safe use of these substances. This information allows customers to make informed decisions about the potential risks associated with using the components and take appropriate measures to mitigate any hazards.Ensuring compliance with REACH SVHC requirements is essential for electronics manufacturers to meet regulatory standards, protect human health and the environment, and maintain transparency in their supply chain. It also demonstrates a commitment to sustainability and responsible manufacturing practices in the electronics industry.
No SVHC - Radiation Hardening
Radiation hardening is the process of making electronic components and circuits resistant to damage or malfunction caused by high levels of ionizing radiation, especially for environments in outer space (especially beyond the low Earth orbit), around nuclear reactors and particle accelerators, or during nuclear accidents or nuclear warfare.
No - RoHS Status
RoHS means “Restriction of Certain Hazardous Substances” in the “Hazardous Substances Directive” in electrical and electronic equipment.
ROHS3 Compliant - Lead Free
Lead Free is a term used to describe electronic components that do not contain lead as part of their composition. Lead is a toxic material that can have harmful effects on human health and the environment, so the electronics industry has been moving towards lead-free components to reduce these risks. Lead-free components are typically made using alternative materials such as silver, copper, and tin. Manufacturers must comply with regulations such as the Restriction of Hazardous Substances (RoHS) directive to ensure that their products are lead-free and environmentally friendly.
Lead Free
Parts with Similar Specs
- ImagePart NumberManufacturerMountPackage / CaseContinuous Drain Current (ID)Current - Continuous Drain (Id) @ 25°CThreshold VoltageGate to Source Voltage (Vgs)Power DissipationPower Dissipation-MaxView Compare
STP55NF06
Through Hole
TO-220-3
50 A
50A (Tc)
3 V
20 V
30 W
110W (Tc)
Through Hole
TO-220-3
60 A
60A (Tc)
1 V
15 V
110 W
110W (Tc)
Through Hole
TO-220-3
55 A
55A (Tc)
2 V
25 V
114 W
114W (Tc)
Through Hole
TO-220-3
60 A
60A (Tc)
4 V
20 V
110 W
110W (Tc)
-
TO-220-3
-
60A (Tc)
-
-
-
110W (Tc)
STP55NF06 Package

STP55NF06 Package
STP55NF06 Manufacturer
STMicroelectronics is a global independent semiconductor company and is a leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivalled combination of silicon and system expertise, manufacturing strength, Intellectual Property (IP) portfolio and strategic partners positions the Company at the forefront of System-on-Chip (SoC) technology and its products play a key role in enabling today's convergence trends.
Datasheet PDF
- Datasheets :
- Simulation Models :
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