IRLZ44N Power MOSFET: Datasheet, Pinout, IRLZ44N MOSFET

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Published: 24 November 2021 | Last Updated: 24 November 2021

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IRLZ44NPBF

IRLZ44NPBF

Infineon Technologies

N-Channel Tube 22m Ω @ 25A, 10V ±16V 1700pF @ 25V 48nC @ 5V TO-220-3

Purchase Guide

N-Channel Tube 22m Ω @ 25A, 10V ±16V 1700pF @ 25V 48nC @ 5V TO-220-3

The IRLZ44N is a Logic level Mosfet in the TO-220AB package. This post will show you more details about IRLZ44N. There is a huge range of Semiconductors, Capacitors, Resistors and ICs in stock. Welcome RFQ.

Learn about Processing circuit Mosfet IRLZ44N safety from DC 12v to 15v

Processing circuit Mosfet IRLZ44N safety from DC 12v to 15v

IRLZ44N Pinout

IRLZ44N Pinout.jpg

IRLZ44N Pinout

IRLZ44N CAD Model

Symbol

IRLZ44N Symbol.jpg

IRLZ44N Symbol

Footprint

IRLZ44N Footprint.jpg

IRLZ44N Footprint

3D Model

IRLZ44N 3D Model.jpg

IRLZ44N 3D Model


What is IRLZ44N?

The IRLZ44N is a logic level Mosfet with a low gate threshold voltage of 5V, which means it can be fully switched on with just 5V on its gate pin, obviating the requirement for a driving circuit.

IRLZ44N Manufacturer

On April 1, 1999, Siemens Semiconductors officially changed its name to Infineon Technologies. Infineon is a dynamic and flexible company. Success in the highly competitive and ever-changing microelectronics world is our constant goal. As the world's leading designer, manufacturer and supplier, Infineon has a wide range of products used in various microelectronics applications. Our product portfolio includes not only logic products, including digital, mixed-signal and analogue integrated circuits but also discrete semiconductor products.

IRLZ44N Features

  • lanar cell structure for wide SOA

  • Optimized for broadest availability from distribution partners

  • Product qualification according to JEDEC standard

  • Silicon optimized for applications switching below <100kHz

  • Industry-standard through-hole power package

  • High-current rating


IRLZ44N Benefits

  • Increased ruggedness

  • Wide availability from distribution partners

  • Industry-standard qualification

  • High performance in low-frequency applications

  • Standard pin-out allows for drop-in replacement

  • High current capability


IRLZ44N Application

  • High voltage linear regulators

  • Non-resonant switching converters (buck/boost/buck-boost topologies)

  • Resonant switching converters (half-bridge or full-bridge topologies)

  • In these topologies, the IRLZ44N can be used as a high-side switch (non-resonant topologies) or as a gate driver (e.g., an LLC resonant converter) as long as the drain current and VDS breakdown ratings are not exceeded.


IRLZ44N Equivalent

  • IRF1010E

  • IRF1010EZ

  • IRF1010N

  • IRF1010Z

  • IRF1018E

  • IRF1405

  • IRF1405Z

  • IRF1407

  • IRF1607

  • IRF2805

  • IRF2807

  • IRF2807Z

  • IRF2907Z

  • IRF3007

  • IRF3205

  • IRF3205Z

  • IRF3305

  • IRF3710Z

How to trigger IRLZ44N in Power Systems?

The IRLZ44N's main advantage, aside from its temperature rating and high electrical ratings for VDS and drain current, is its low gate voltage threshold. The gate threshold is low enough that an MCU's GPIO pin can drive an IRLZ44N rather far into the ON state. As can be seen from the transfer characteristics, everything from 5 V logic families to LVCMOS logic can generate enough voltage to drive the IRLZ44N with minimal on-state resistance.

Drain current vs. VGS.jpg

Drain current vs. VGS.


How to Use a Mosfet to Drive an Led Circuit?

This project demonstrates how to power an LED with a MOSFET in a straightforward manner. The Arduino can drive LEDs without the use of a MOSFET, but a MOSFET or transistor is necessary when the load on a single pin exceeds 40mA or the combined load on all pins exceeds 200mA. Because the current necessary to drive a 5V mechanical relay is roughly 100mA, which is more than a single pin can deliver, you'll also need a MOSFET.

You must need a logic level MOSFET with microcontroller output voltages; these are typically denoted by an L in the part number, such as IRLZ44N or IRL540.

Logic level MOSFETs, such as the IRLZ44N, can be utilized in Arduino projects to switch high currents at voltages greater than 5V. When installed with a sufficient heatsink and de-rated for its projected operational temperature, the International Rectifier device can switch 47A at up to 55V. Consult the associated datasheet for specifics on your device, as not all IRLZ44Ns have the same current limit specs. The gate, drain, and source pins for the TO-220 package are depicted in the diagram above, from left to right.

A 10k pull-down resistor must be placed across the gate and source connections, else the MOSFET will be turned on by even minor electrostatic voltages on the gate - simply touching the bare wire on the gate is enough.

For the IRLZ44N to conduct, the Gate Threshold Voltage, designated as VGS(th) in the electrical characteristics, must be exceeded – this is 2V for the IRLZ44N. The MOSFET, on the other hand, is barely turned on at 2V and can only carry a very modest current, perhaps 1A. Consult the data sheet's charts to see what current you can switch with what gate voltage.

How to Use a Mosfet to Drive an Led Circuit.jpg

How to Use a Mosfet to Drive an Led Circuit


Specifications

Infineon Technologies IRLZ44NPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRLZ44NPBF.
  • Type
    Parameter
  • Factory Lead Time
    12 Weeks
  • Mount

    In electronic components, the term "Mount" typically refers to the method or process of physically attaching or fixing a component onto a circuit board or other electronic device. This can involve soldering, adhesive bonding, or other techniques to secure the component in place. The mounting process is crucial for ensuring proper electrical connections and mechanical stability within the electronic system. Different components may have specific mounting requirements based on their size, shape, and function, and manufacturers provide guidelines for proper mounting procedures to ensure optimal performance and reliability of the electronic device.

    Through Hole
  • Mounting Type

    The "Mounting Type" in electronic components refers to the method used to attach or connect a component to a circuit board or other substrate, such as through-hole, surface-mount, or panel mount.

    Through Hole
  • Package / Case

    refers to the protective housing that encases an electronic component, providing mechanical support, electrical connections, and thermal management.

    TO-220-3
  • Number of Pins
    3
  • Transistor Element Material

    The "Transistor Element Material" parameter in electronic components refers to the material used to construct the transistor within the component. Transistors are semiconductor devices that amplify or switch electronic signals and are a fundamental building block in electronic circuits. The material used for the transistor element can significantly impact the performance and characteristics of the component. Common materials used for transistor elements include silicon, germanium, and gallium arsenide, each with its own unique properties and suitability for different applications. The choice of transistor element material is crucial in designing electronic components to meet specific performance requirements such as speed, power efficiency, and temperature tolerance.

    SILICON
  • Current - Continuous Drain (Id) @ 25℃
    47A Tc
  • Drive Voltage (Max Rds On, Min Rds On)
    4V 10V
  • Number of Elements
    1
  • Power Dissipation (Max)
    3.8W Ta 110W Tc
  • Turn Off Delay Time

    It is the time from when Vgs drops below 90% of the gate drive voltage to when the drain current drops below 90% of the load current. It is the delay before current starts to transition in the load, and depends on Rg. Ciss.

    26 ns
  • Operating Temperature

    The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

    -55°C~175°C TJ
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Tube
  • Series

    In electronic components, the "Series" refers to a group of products that share similar characteristics, designs, or functionalities, often produced by the same manufacturer. These components within a series typically have common specifications but may vary in terms of voltage, power, or packaging to meet different application needs. The series name helps identify and differentiate between various product lines within a manufacturer's catalog.

    HEXFET®
  • Published
    1997
  • JESD-609 Code

    The "JESD-609 Code" in electronic components refers to a standardized marking code that indicates the lead-free solder composition and finish of electronic components for compliance with environmental regulations.

    e3
  • Part Status

    Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.

    Active
  • Moisture Sensitivity Level (MSL)

    Moisture Sensitivity Level (MSL) is a standardized rating that indicates the susceptibility of electronic components, particularly semiconductors, to moisture-induced damage during storage and the soldering process, defining the allowable exposure time to ambient conditions before they require special handling or baking to prevent failures

    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code

    An ECCN (Export Control Classification Number) is an alphanumeric code used by the U.S. Bureau of Industry and Security to identify and categorize electronic components and other dual-use items that may require an export license based on their technical characteristics and potential for military use.

    EAR99
  • Resistance

    Resistance is a fundamental property of electronic components that measures their opposition to the flow of electric current. It is denoted by the symbol "R" and is measured in ohms (Ω). Resistance is caused by the collisions of electrons with atoms in a material, which generates heat and reduces the flow of current. Components with higher resistance will impede the flow of current more than those with lower resistance. Resistance plays a crucial role in determining the behavior and functionality of electronic circuits, such as limiting current flow, voltage division, and controlling power dissipation.

    22mOhm
  • Terminal Finish

    Terminal Finish refers to the surface treatment applied to the terminals or leads of electronic components to enhance their performance and longevity. It can improve solderability, corrosion resistance, and overall reliability of the connection in electronic assemblies. Common finishes include nickel, gold, and tin, each possessing distinct properties suitable for various applications. The choice of terminal finish can significantly impact the durability and effectiveness of electronic devices.

    Matte Tin (Sn) - with Nickel (Ni) barrier
  • Additional Feature

    Any Feature, including a modified Existing Feature, that is not an Existing Feature.

    AVALANCHE RATED
  • Voltage - Rated DC

    Voltage - Rated DC is a parameter that specifies the maximum direct current (DC) voltage that an electronic component can safely handle without being damaged. This rating is crucial for ensuring the proper functioning and longevity of the component in a circuit. Exceeding the rated DC voltage can lead to overheating, breakdown, or even permanent damage to the component. It is important to carefully consider this parameter when designing or selecting components for a circuit to prevent any potential issues related to voltage overload.

    55V
  • Current Rating

    Current rating is the maximum current that a fuse will carry for an indefinite period without too much deterioration of the fuse element.

    47A
  • Lead Pitch

    Lead pitch in electronic components refers to the distance between the center of one lead (or pin) of a component to the center of the adjacent lead. It is an important parameter to consider when designing and assembling electronic circuits, as it determines the spacing required on a circuit board for proper placement and soldering of the component. Lead pitch is typically specified in millimeters or inches and can vary depending on the type of component, such as integrated circuits, resistors, capacitors, and connectors. Choosing the correct lead pitch ensures proper alignment and connection of components on a circuit board, ultimately affecting the functionality and reliability of the electronic device.

    2.54mm
  • Number of Channels
    1
  • Element Configuration

    The distribution of electrons of an atom or molecule (or other physical structure) in atomic or molecular orbitals.

    Single
  • Operating Mode

    A phase of operation during the operation and maintenance stages of the life cycle of a facility.

    ENHANCEMENT MODE
  • Power Dissipation

    the process by which an electronic or electrical device produces heat (energy loss or waste) as an undesirable derivative of its primary action.

    83W
  • Case Connection

    Case Connection refers to the method by which an electronic component's case or housing is connected to the electrical circuit. This connection is important for grounding purposes, mechanical stability, and heat dissipation. The case connection can vary depending on the type of component and its intended application. It is crucial to ensure a secure and reliable case connection to maintain the overall performance and safety of the electronic device.

    DRAIN
  • Turn On Delay Time

    Turn-on delay, td(on), is the time taken to charge the input capacitance of the device before drain current conduction can start.

    11 ns
  • FET Type

    "FET Type" refers to the type of Field-Effect Transistor (FET) being used in an electronic component. FETs are three-terminal semiconductor devices that can be classified into different types based on their construction and operation. The main types of FETs include Metal-Oxide-Semiconductor FETs (MOSFETs), Junction FETs (JFETs), and Insulated-Gate Bipolar Transistors (IGBTs).Each type of FET has its own unique characteristics and applications. MOSFETs are commonly used in digital circuits due to their high input impedance and low power consumption. JFETs are often used in low-noise amplifiers and switching circuits. IGBTs combine the high input impedance of MOSFETs with the high current-carrying capability of bipolar transistors, making them suitable for high-power applications like motor control and power inverters.When selecting an electronic component, understanding the FET type is crucial as it determines the device's performance and suitability for a specific application. It is important to consider factors such as voltage ratings, current handling capabilities, switching speeds, and power dissipation when choosing the right FET type for a particular circuit design.

    N-Channel
  • Transistor Application

    In the context of electronic components, the parameter "Transistor Application" refers to the specific purpose or function for which a transistor is designed and used. Transistors are semiconductor devices that can amplify or switch electronic signals and are commonly used in various electronic circuits. The application of a transistor can vary widely depending on its design and characteristics, such as whether it is intended for audio amplification, digital logic, power control, or radio frequency applications. Understanding the transistor application is important for selecting the right type of transistor for a particular circuit or system to ensure optimal performance and functionality.

    SWITCHING
  • Rds On (Max) @ Id, Vgs

    Rds On (Max) @ Id, Vgs refers to the maximum on-resistance of a MOSFET or similar transistor when it is fully turned on or in the saturation region. It is specified at a given drain current (Id) and gate-source voltage (Vgs). This parameter indicates how much resistance the component will offer when conducting, impacting power loss and efficiency in a circuit. Lower Rds On values are preferred for better performance in switching applications.

    22m Ω @ 25A, 10V
  • Vgs(th) (Max) @ Id

    The parameter "Vgs(th) (Max) @ Id" in electronic components refers to the maximum gate-source threshold voltage at a specified drain current (Id). This parameter is commonly found in field-effect transistors (FETs) and is used to define the minimum voltage required at the gate terminal to turn on the transistor and allow current to flow from the drain to the source. The maximum value indicates the upper limit of this threshold voltage under specified operating conditions. It is an important parameter for determining the proper biasing and operating conditions of the FET in a circuit to ensure proper functionality and performance.

    2V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds

    The parameter "Input Capacitance (Ciss) (Max) @ Vds" in electronic components refers to the maximum input capacitance measured at a specific drain-source voltage (Vds). Input capacitance is a crucial parameter in field-effect transistors (FETs) and power MOSFETs, as it represents the total capacitance at the input terminal of the device. This capacitance affects the device's switching speed and overall performance, as it influences the time required for charging and discharging during operation. Manufacturers provide this parameter to help designers understand the device's input characteristics and make informed decisions when integrating it into a circuit.

    1700pF @ 25V
  • Gate Charge (Qg) (Max) @ Vgs

    Gate Charge (Qg) (Max) @ Vgs refers to the maximum amount of charge that must be supplied to the gate of a MOSFET or similar device to fully turn it on, measured at a specific gate-source voltage (Vgs). This parameter is crucial for understanding the switching characteristics of the device, as it influences the speed at which the gate can charge and discharge. A higher gate charge value often implies slower switching speeds, which can impact the efficiency of high-frequency applications. This parameter is typically specified in nanocoulombs (nC) in the component's datasheet.

    48nC @ 5V
  • Rise Time

    In electronics, when describing a voltage or current step function, rise time is the time taken by a signal to change from a specified low value to a specified high value.

    84ns
  • Vgs (Max)

    Vgs (Max) refers to the maximum gate-source voltage that can be applied to a field-effect transistor (FET) without causing damage to the component. This parameter is crucial in determining the safe operating limits of the FET and helps prevent overvoltage conditions that could lead to device failure. Exceeding the specified Vgs (Max) rating can result in breakdown of the gate oxide layer, leading to permanent damage to the FET. Designers must ensure that the applied gate-source voltage does not exceed the maximum rating to ensure reliable and long-term operation of the electronic component.

    ±16V
  • Fall Time (Typ)

    Fall Time (Typ) is a parameter used to describe the time it takes for a signal to transition from a high level to a low level in an electronic component, such as a transistor or an integrated circuit. It is typically measured in nanoseconds or microseconds and is an important characteristic that affects the performance of the component in digital circuits. A shorter fall time indicates faster switching speeds and can result in improved overall circuit performance, such as reduced power consumption and increased data transmission rates. Designers often consider the fall time specification when selecting components for their circuits to ensure proper functionality and efficiency.

    15 ns
  • Continuous Drain Current (ID)

    Continuous Drain Current (ID) is a key parameter in electronic components, particularly in field-effect transistors (FETs) such as MOSFETs. It refers to the maximum current that can flow continuously through the drain terminal of the FET without causing damage to the component. This parameter is crucial for determining the power handling capability of the FET and is specified by the manufacturer in the component's datasheet. Designers must ensure that the actual operating current does not exceed the specified Continuous Drain Current to prevent overheating and potential failure of the component.

    47A
  • Threshold Voltage

    The threshold voltage is a critical parameter in electronic components, particularly in field-effect transistors (FETs). It refers to the minimum voltage required at the input terminal of the FET to turn it on and allow current to flow between the source and drain terminals. Below the threshold voltage, the FET remains in the off state, acting as an open switch. Once the threshold voltage is exceeded, the FET enters the on state, conducting current between the source and drain.The threshold voltage is a key factor in determining the operating characteristics of FETs, such as their switching speed and power consumption. It is typically specified by the manufacturer and can vary depending on the specific type of FET and its design. Designers must consider the threshold voltage when selecting FETs for a particular application to ensure proper functionality and performance.

    2V
  • JEDEC-95 Code

    JEDEC-95 Code is a standardized identification system used by the Joint Electron Device Engineering Council to categorize and describe semiconductor devices. This code provides a unique alphanumeric identifier for various memory components, ensuring consistency in documentation and communication across the electronics industry. The format includes information about the type, capacity, and technology of the device, facilitating easier specification and understanding for manufacturers and engineers.

    TO-220AB
  • Gate to Source Voltage (Vgs)

    The Gate to Source Voltage (Vgs) is a crucial parameter in electronic components, particularly in field-effect transistors (FETs) such as MOSFETs. It refers to the voltage difference between the gate and source terminals of the FET. This voltage determines the conductivity of the FET and controls the flow of current through the device. By varying the Vgs, the FET can be switched on or off, allowing for precise control of electronic circuits. Understanding and properly managing the Vgs is essential for ensuring the reliable and efficient operation of FET-based circuits.

    16V
  • Drain to Source Breakdown Voltage

    Drain to Source Breakdown Voltage, often denoted as V(BR) D-S, is a critical parameter in electronic components, particularly in field-effect transistors (FETs) and metal-oxide-semiconductor FETs (MOSFETs). It represents the maximum voltage that can be applied between the drain and source terminals of the device without causing breakdown or permanent damage. Exceeding this voltage can lead to excessive current flow, resulting in thermal failure or destruction of the component. It is essential for ensuring reliable operation in circuit designs where high voltages may be encountered.

    55V
  • Dual Supply Voltage

    Dual Supply Voltage refers to an electronic component's requirement for two separate power supply voltages, typically one positive and one negative. This configuration is commonly used in operational amplifiers, analog circuits, and certain digital devices to allow for greater signal handling capabilities and improved performance. The use of dual supply voltages enables the device to process bipolar signals, thereby enhancing its functionality in various applications.

    55V
  • Recovery Time

    Recovery time in electronic components refers to the time it takes for a device to return to its normal operating state after being subjected to a specific stimulus or disturbance. This parameter is particularly important in devices such as diodes, transistors, and capacitors, where the recovery time can impact the overall performance and reliability of the component. A shorter recovery time indicates that the component can quickly recover from a transient event, ensuring proper functionality and minimizing any potential disruptions in the circuit. Manufacturers typically provide recovery time specifications to help engineers and designers select components that meet the requirements of their specific applications.

    120 ns
  • Max Junction Temperature (Tj)

    Max Junction Temperature (Tj) refers to the maximum allowable temperature at the junction of a semiconductor device, such as a transistor or integrated circuit. It is a critical parameter that influences the performance, reliability, and lifespan of the component. Exceeding this temperature can lead to thermal runaway, breakdown, or permanent damage to the device. Proper thermal management is essential to ensure the junction temperature remains within safe operating limits during device operation.

    175°C
  • Nominal Vgs

    Nominal Vgs refers to the standard or expected gate-source voltage in field-effect transistors (FETs) and other related electronic components. It represents the voltage level at which the transistor operates optimally, ensuring proper switching characteristics and performance. This parameter is crucial for designers to determine the appropriate control signals required for efficient operation of the device in circuits. Variations from the nominal Vgs can affect the performance and reliability of the component.

    2 V
  • Height
    19.8mm
  • Length
    10.5156mm
  • Width
    4.69mm
  • REACH SVHC

    The parameter "REACH SVHC" in electronic components refers to the compliance with the Registration, Evaluation, Authorization, and Restriction of Chemicals (REACH) regulation regarding Substances of Very High Concern (SVHC). SVHCs are substances that may have serious effects on human health or the environment, and their use is regulated under REACH to ensure their safe handling and minimize their impact.Manufacturers of electronic components need to declare if their products contain any SVHCs above a certain threshold concentration and provide information on the safe use of these substances. This information allows customers to make informed decisions about the potential risks associated with using the components and take appropriate measures to mitigate any hazards.Ensuring compliance with REACH SVHC requirements is essential for electronics manufacturers to meet regulatory standards, protect human health and the environment, and maintain transparency in their supply chain. It also demonstrates a commitment to sustainability and responsible manufacturing practices in the electronics industry.

    No SVHC
  • Radiation Hardening

    Radiation hardening is the process of making electronic components and circuits resistant to damage or malfunction caused by high levels of ionizing radiation, especially for environments in outer space (especially beyond the low Earth orbit), around nuclear reactors and particle accelerators, or during nuclear accidents or nuclear warfare.

    No
  • RoHS Status

    RoHS means “Restriction of Certain Hazardous Substances” in the “Hazardous Substances Directive” in electrical and electronic equipment.

    ROHS3 Compliant
  • Lead Free

    Lead Free is a term used to describe electronic components that do not contain lead as part of their composition. Lead is a toxic material that can have harmful effects on human health and the environment, so the electronics industry has been moving towards lead-free components to reduce these risks. Lead-free components are typically made using alternative materials such as silver, copper, and tin. Manufacturers must comply with regulations such as the Restriction of Hazardous Substances (RoHS) directive to ensure that their products are lead-free and environmentally friendly.

    Lead Free
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Frequently Asked Questions

How do I use IRLZ44N?

To use a MOSFET as a switch, you have to have its gate voltage (Vgs) higher than the source. If you connect the gate to the source (Vgs=0) it is turned off. For example, we have an IRFZ44N which is a “standard” MOSFET and only turns on when Vgs=10V – 20V.

What is IRFZ44N?

The IRFZ44N is an N-channel MOSFET with a high drain current of 49A and a low Rds value of 17.5 mΩ. It also has a low threshold voltage of 4V at which the MOSFET will start conducting. Hence it is commonly used with microcontrollers to drive with 5V.

What difference is between IRLZ44N and IRFZ44N MOSFET?

The IRLZ44N and IRFZ44N MOSFETs are frequently misunderstood and misapplied. The IRLZ44N is a logic level Mosfet with a low gate threshold voltage of 5V, which means it can be fully switched on with just 5V on its gate pin, obviating the requirement for a driving circuit.

If the MOSFET is to be turned on entirely using a microcontroller like Arduino, the IRFZ44N requires a gate driver circuit. However, straight 5V from an I/O pin will turn it on partially, but the output drain current will be limited.

You can see the spec. comparison above.

What is gate threshold voltage?

The gate threshold voltage is the lowest VGS at which a specified small amount of ID flows. The test is run with VGS = VDS. On the curve tracer, the Collector Supply provides VDS. Patch cords are used to short the gate to the drain so that VGS=VDS.
IRLZ44NPBF

Infineon Technologies

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