

Diotec Semiconductor PPS1060-3G
Manufacturer No:
PPS1060-3G
Tiny WHSLManufacturer:
Utmel No:
672-PPS1060-3G
Package:
TO-277, 3-PowerDFN
Datasheet:
Description:
Fast Recovery =< 500ns, > 200mA (Io) 590 mV @ 10 A -50°C ~ 150°C 40 μA @ 60 V Bulk TO-277, 3-PowerDFN Surface Mount
Quantity:
Unit Price: $0.222084
Ext Price: $0.22
Delivery:





Payment:











In Stock : 22
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$0.222084
$0.22
10
$0.209513
$2.10
100
$0.197654
$19.77
500
$0.186466
$93.23
1000
$0.175911
$175.91
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- TypeParameter
- Mounting Type
The "Mounting Type" in electronic components refers to the method used to attach or connect a component to a circuit board or other substrate, such as through-hole, surface-mount, or panel mount.
Surface Mount - Package / Case
refers to the protective housing that encases an electronic component, providing mechanical support, electrical connections, and thermal management.
TO-277, 3-PowerDFN - Supplier Device Package
The parameter "Supplier Device Package" in electronic components refers to the physical packaging or housing of the component as provided by the supplier. It specifies the form factor, dimensions, and layout of the component, which are crucial for compatibility and integration into electronic circuits and systems. The supplier device package information typically includes details such as the package type (e.g., DIP, SOP, QFN), number of pins, pitch, and overall size, allowing engineers and designers to select the appropriate component for their specific application requirements. Understanding the supplier device package is essential for proper component selection, placement, and soldering during the manufacturing process to ensure optimal performance and reliability of the electronic system.
TO-277B - MfrDiotec Semiconductor
- Packaging
Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.
Bulk - Part Status
Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.
Active - Speed
In electronic components, "Speed" typically refers to the rate at which data can be processed or transferred within the component. It is a measure of how quickly the component can perform its functions, such as executing instructions or transmitting signals. Speed is often specified in terms of frequency, such as clock speed in processors or data transfer rate in memory modules. Higher speed components can perform tasks more quickly, leading to improved overall performance in electronic devices. It is an important parameter to consider when designing or selecting electronic components for specific applications.
Fast Recovery =< 500ns, > 200mA (Io) - Current - Reverse Leakage @ Vr
Current - Reverse Leakage @ Vr is a parameter that describes the amount of current that flows in the reverse direction through a diode or other semiconductor component when a reverse voltage (Vr) is applied across it. This leakage current is typically very small, but it is important to consider in electronic circuits as it can affect the overall performance and reliability of the component. The reverse leakage current is influenced by factors such as the material properties of the semiconductor, temperature, and the magnitude of the reverse voltage applied. Manufacturers provide this parameter in datasheets to help engineers and designers understand the behavior of the component in reverse bias conditions.
40 μA @ 60 V - Voltage - Forward (Vf) (Max) @ If
The parameter "Voltage - Forward (Vf) (Max) @ If" refers to the maximum voltage drop across a diode when it is forward-biased and conducting a specified forward current (If). It indicates the maximum potential difference the diode can withstand while allowing current to flow in the forward direction without breaking down. This value is crucial for designing circuits as it helps determine how much voltage will be lost across the diode during operation. Higher Vf values can lead to reduced efficiency in power applications, making this parameter essential for optimizing circuit performance.
590 mV @ 10 A - Operating Temperature - Junction
Operating Temperature - Junction refers to the maximum temperature at which the junction of an electronic component can safely operate without causing damage or performance degradation. This parameter is crucial for determining the reliability and longevity of the component, as excessive heat can lead to thermal stress and failure. Manufacturers specify the operating temperature range to ensure that the component functions within safe limits under normal operating conditions. It is important for designers and engineers to consider the operating temperature - junction when selecting and using electronic components to prevent overheating and ensure optimal performance.
-50°C ~ 150°C - Voltage - DC Reverse (Vr) (Max)
Voltage - DC Reverse (Vr) (Max) is a parameter in electronic components that specifies the maximum reverse voltage that the component can withstand without breaking down. This parameter is crucial for components like diodes and transistors that are often subjected to reverse voltage during operation. Exceeding the maximum reverse voltage can lead to the component failing or getting damaged. Designers need to consider this parameter when selecting components to ensure the reliability and longevity of their circuits.
60 V - Current - Average Rectified (Io)
The parameter "Current - Average Rectified (Io)" in electronic components refers to the average value of the rectified current flowing through the component. This parameter is important in determining the average power dissipation and thermal considerations of the component. It is typically specified in datasheets for diodes, rectifiers, and other components that handle alternating current (AC) and convert it to direct current (DC). Understanding the average rectified current helps in selecting the appropriate component for a given application to ensure reliable operation and prevent overheating.
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