Toshiba Semiconductor and Storage 30JL2C41(F)
Toshiba Semiconductor and Storage 30JL2C41(F)
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Toshiba Semiconductor and Storage 30JL2C41(F)

Manufacturer No:

30JL2C41(F)

Utmel No:

2541-30JL2C41(F)

Package:

TO-3P-3, SC-65-3

ECAD Model:

Description:

Standard Rectifier Diode 1 Pair Common Cathode Fast Recovery =< 500ns, > 200mA (Io) -40°C~150°C 30A 600V-DC TO-3P-3, SC-65-3 Through Hole

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30JL2C41(F) information

Specifications
Product Details
Product Comparison
Toshiba Semiconductor and Storage 30JL2C41(F) technical specifications, attributes, parameters and parts with similar specifications to Toshiba Semiconductor and Storage 30JL2C41(F).
  • Type
    Parameter
  • Package / Case

    refers to the protective housing that encases an electronic component, providing mechanical support, electrical connections, and thermal management.

    TO-3P-3, SC-65-3
  • Mounting Type

    The "Mounting Type" in electronic components refers to the method used to attach or connect a component to a circuit board or other substrate, such as through-hole, surface-mount, or panel mount.

    Through Hole
  • Mount

    In electronic components, the term "Mount" typically refers to the method or process of physically attaching or fixing a component onto a circuit board or other electronic device. This can involve soldering, adhesive bonding, or other techniques to secure the component in place. The mounting process is crucial for ensuring proper electrical connections and mechanical stability within the electronic system. Different components may have specific mounting requirements based on their size, shape, and function, and manufacturers provide guidelines for proper mounting procedures to ensure optimal performance and reliability of the electronic device.

    Through Hole
  • Number of Pins
    3
  • Published
    2005
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Bulk
  • Part Status

    Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.

    Obsolete
  • Moisture Sensitivity Level (MSL)

    Moisture Sensitivity Level (MSL) is a standardized rating that indicates the susceptibility of electronic components, particularly semiconductors, to moisture-induced damage during storage and the soldering process, defining the allowable exposure time to ambient conditions before they require special handling or baking to prevent failures

    1 (Unlimited)
  • Max Operating Temperature

    The Maximum Operating Temperature is the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

    150°C
  • Min Operating Temperature

    The "Min Operating Temperature" parameter in electronic components refers to the lowest temperature at which the component is designed to operate effectively and reliably. This parameter is crucial for ensuring the proper functioning and longevity of the component, as operating below this temperature may lead to performance issues or even damage. Manufacturers specify the minimum operating temperature to provide guidance to users on the environmental conditions in which the component can safely operate. It is important to adhere to this parameter to prevent malfunctions and ensure the overall reliability of the electronic system.

    -40°C
  • Element Configuration

    The distribution of electrons of an atom or molecule (or other physical structure) in atomic or molecular orbitals.

    Common Cathode
  • Speed

    In electronic components, "Speed" typically refers to the rate at which data can be processed or transferred within the component. It is a measure of how quickly the component can perform its functions, such as executing instructions or transmitting signals. Speed is often specified in terms of frequency, such as clock speed in processors or data transfer rate in memory modules. Higher speed components can perform tasks more quickly, leading to improved overall performance in electronic devices. It is an important parameter to consider when designing or selecting electronic components for specific applications.

    Fast Recovery =< 500ns, > 200mA (Io)
  • Diode Type

    In electronic components, the parameter "Diode Type" refers to the specific type or configuration of a diode, which is a semiconductor device that allows current to flow in one direction only. There are various types of diodes, each designed for specific applications and functions. Common diode types include rectifier diodes, zener diodes, light-emitting diodes (LEDs), and Schottky diodes, among others. The diode type determines the diode's characteristics, such as forward voltage drop, reverse breakdown voltage, and maximum current rating, making it crucial for selecting the right diode for a particular circuit or application. Understanding the diode type is essential for ensuring proper functionality and performance in electronic circuits.

    Standard
  • Current - Reverse Leakage @ Vr

    Current - Reverse Leakage @ Vr is a parameter that describes the amount of current that flows in the reverse direction through a diode or other semiconductor component when a reverse voltage (Vr) is applied across it. This leakage current is typically very small, but it is important to consider in electronic circuits as it can affect the overall performance and reliability of the component. The reverse leakage current is influenced by factors such as the material properties of the semiconductor, temperature, and the magnitude of the reverse voltage applied. Manufacturers provide this parameter in datasheets to help engineers and designers understand the behavior of the component in reverse bias conditions.

    50μA @ 600V
  • Voltage - Forward (Vf) (Max) @ If

    The parameter "Voltage - Forward (Vf) (Max) @ If" refers to the maximum voltage drop across a diode when it is forward-biased and conducting a specified forward current (If). It indicates the maximum potential difference the diode can withstand while allowing current to flow in the forward direction without breaking down. This value is crucial for designing circuits as it helps determine how much voltage will be lost across the diode during operation. Higher Vf values can lead to reduced efficiency in power applications, making this parameter essential for optimizing circuit performance.

    2V @ 15A
  • Forward Current

    Current which flows upon application of forward voltage.

    30A
  • Operating Temperature - Junction

    Operating Temperature - Junction refers to the maximum temperature at which the junction of an electronic component can safely operate without causing damage or performance degradation. This parameter is crucial for determining the reliability and longevity of the component, as excessive heat can lead to thermal stress and failure. Manufacturers specify the operating temperature range to ensure that the component functions within safe limits under normal operating conditions. It is important for designers and engineers to consider the operating temperature - junction when selecting and using electronic components to prevent overheating and ensure optimal performance.

    -40°C~150°C
  • Current - Average Rectified (Io)

    The parameter "Current - Average Rectified (Io)" in electronic components refers to the average value of the rectified current flowing through the component. This parameter is important in determining the average power dissipation and thermal considerations of the component. It is typically specified in datasheets for diodes, rectifiers, and other components that handle alternating current (AC) and convert it to direct current (DC). Understanding the average rectified current helps in selecting the appropriate component for a given application to ensure reliable operation and prevent overheating.

    15A
  • Max Reverse Voltage (DC)

    Max Reverse Voltage (DC) refers to the maximum voltage that a semiconductor device, such as a diode, can withstand in the reverse bias direction without failing. Exceeding this voltage can lead to breakdown and potential damage to the component. It is a critical parameter in circuit design to ensure reliability and prevent failure when the device is subjected to reverse voltage conditions.

    600V
  • Average Rectified Current

    Mainly used to characterize alternating voltage and current. It can be computed by averaging the absolute value of a waveform over one full period of the waveform.

    30A
  • Reverse Recovery Time

    Reverse Recovery Time is a key parameter in semiconductor devices, particularly diodes and transistors. It refers to the time taken for a diode or transistor to switch from conducting in the forward direction to blocking in the reverse direction when the polarity of the voltage across the device is reversed. This parameter is crucial in applications where fast switching speeds are required, as a shorter reverse recovery time allows for quicker response times and improved efficiency. Reverse Recovery Time is typically specified in datasheets for electronic components and is an important consideration in circuit design to ensure optimal performance and reliability.

    50 ns
  • Peak Reverse Current

    The maximum voltage that a diode can withstand in the reverse direction without breaking down or avalanching.If this voltage is exceeded the diode may be destroyed. Diodes must have a peak inverse voltage rating that is higher than the maximum voltage that will be applied to them in a given application.

    50μA
  • Max Repetitive Reverse Voltage (Vrrm)

    The Max Repetitive Reverse Voltage (Vrrm) is a crucial parameter in electronic components, particularly in diodes and transistors. It refers to the maximum voltage that can be applied across the component in the reverse direction without causing damage. This parameter is important for ensuring the proper functioning and longevity of the component in circuits where reverse voltage may be present. Exceeding the Vrrm rating can lead to breakdown and failure of the component, so it is essential to carefully consider this specification when designing or selecting components for a circuit.

    600V
  • Peak Non-Repetitive Surge Current

    Peak Non-Repetitive Surge Current is a specification in electronic components that refers to the maximum current that the component can withstand for a short duration without sustaining damage. This surge current typically occurs as a result of sudden voltage spikes or transient events in the circuit. It is important to consider this parameter when designing or selecting components to ensure they can handle occasional high-current surges without failing. The value of Peak Non-Repetitive Surge Current is usually specified in amperes and is crucial for protecting the component and maintaining the overall reliability of the circuit.

    165A
  • Diode Configuration

    Diode configuration refers to the specific arrangement and connection of diodes within an electronic circuit. It can determine how the diode functions, whether as a rectifier, switch, or voltage regulator. Common configurations include series, parallel, and bridge configurations, each with distinct characteristics affecting the flow of current and voltage in the circuit. Proper diode configuration is essential for achieving desired circuit behaviors and performance.

    1 Pair Common Cathode
  • Max Forward Surge Current (Ifsm)

    Max Forward Surge Current (Ifsm) is a parameter used to specify the maximum peak current that a diode or other electronic component can withstand for a short duration during a surge event. Surge currents can occur due to sudden changes in voltage or power supply fluctuations, and the Ifsm rating helps determine the component's ability to handle such transient overloads without being damaged. It is important to consider the Ifsm rating when selecting components for applications where surge currents are expected, such as in power supplies, motor drives, and other high-power circuits. Exceeding the Ifsm rating can lead to overheating, degradation, or failure of the component, so it is crucial to ensure that the chosen component can safely handle the expected surge currents in the circuit.

    165A
  • Width
    4.8mm
  • Length
    15.9mm
  • Height
    19mm
  • RoHS Status

    RoHS means “Restriction of Certain Hazardous Substances” in the “Hazardous Substances Directive” in electrical and electronic equipment.

    RoHS Compliant
  • Radiation Hardening

    Radiation hardening is the process of making electronic components and circuits resistant to damage or malfunction caused by high levels of ionizing radiation, especially for environments in outer space (especially beyond the low Earth orbit), around nuclear reactors and particle accelerators, or during nuclear accidents or nuclear warfare.

    No
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30JL2C41(F) Overview

This device will operate when the forward voltage is set to 30A.A reverse voltage peak of 50μA is used to power devices like this one.

30JL2C41(F) Features

a peak voltage of 50μA
a reverse voltage peak of 50μA

30JL2C41(F) Applications

There are a lot of Toshiba Semiconductor and Storage
30JL2C41(F) applications of rectifier diode array.


  • Rectifier for drives applications
  • Crowbar applications
  • Rectifiers for UBS
  • Battery chargers
  • Rectifiers in switch mode power supplies (SMPS)
  • Free wheeling diode in low voltage converters
  • General Rectification
The three parts on the right have similar specifications to Toshiba Semiconductor and Storage & 30JL2C41(F).
30JL2C41(F) Relevant information

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