

Dynex Semiconductor DIM1500ASM33-TS001
Manufacturer No:
DIM1500ASM33-TS001
Tiny WHSLManufacturer:
Utmel No:
2436-DIM1500ASM33-TS001
Package:
-
Datasheet:
Description:
Insulated Gate Bipolar Transistor, 1500A I(C), 3300V V(BR)CES
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- TypeParameter
- Rohs CodeYes
- Part Life Cycle CodeContact Manufacturer
- Ihs ManufacturerDYNEX SEMICONDUCTOR LTD
- Package Description,
- Number of Elements3
- Operating Temperature-Max150 °C
- ECCN Code
An ECCN (Export Control Classification Number) is an alphanumeric code used by the U.S. Bureau of Industry and Security to identify and categorize electronic components and other dual-use items that may require an export license based on their technical characteristics and potential for military use.
EAR99 - Reach Compliance Code
Reach Compliance Code refers to a designation indicating that electronic components meet the requirements set by the Registration, Evaluation, Authorization, and Restriction of Chemicals (REACH) regulation in the European Union. It signifies that the manufacturer has assessed and managed the chemical substances within the components to ensure safety and environmental protection. This code is vital for compliance with regulations aimed at minimizing risks associated with hazardous substances in electronic products.
unknown - Power Dissipation-Max (Abs)
Power Dissipation-Max (Abs) refers to the maximum amount of power that an electronic component can dissipate without undergoing thermal damage or degradation. This value is crucial for ensuring reliable operation, as exceeding it can result in overheating and failure. It is typically specified in watts and serves as a critical parameter for designers to determine proper heat management strategies in circuits. Properly managing the power dissipation is essential for the longevity and performance of electronic devices.
15600 W - Collector Current-Max (IC)
The parameter "Collector Current-Max (IC)" in electronic components refers to the maximum amount of current that can safely flow through the collector terminal of a transistor without causing damage to the component. It is an important specification that indicates the upper limit of current that the transistor can handle under normal operating conditions. Exceeding this maximum current rating can lead to overheating and potentially result in the failure of the transistor. Designers must ensure that the collector current does not exceed this specified limit to prevent damage to the component and ensure reliable operation of the circuit.
1500 A - Collector-Emitter Voltage-Max
Collector-Emitter Voltage-Max, often abbreviated as Vce(max), is a key specification in bipolar junction transistors (BJTs). It represents the maximum voltage that can be applied between the collector and emitter terminals without risking damage to the transistor. Exceeding this voltage can lead to breakdown conditions, resulting in device failure or reliability issues. This parameter is crucial for ensuring safe operation within the specified design limits of electronic circuits using transistors.
3300 V - Gate-Emitter Voltage-Max
The "Gate-Emitter Voltage-Max" parameter is a specification commonly found in field-effect transistors (FETs) and insulated gate bipolar transistors (IGBTs). It refers to the maximum allowable voltage that can be applied between the gate and emitter terminals of the device without causing damage. Exceeding this voltage limit can lead to breakdown of the gate oxide layer or other critical components, resulting in potential device failure.This parameter is crucial for ensuring the reliable operation of the transistor and preventing overvoltage conditions that could compromise its performance or longevity. Designers must carefully consider the Gate-Emitter Voltage-Max specification when selecting and using these components in electronic circuits to avoid exceeding the specified limits and causing damage to the device. It is typically provided in the datasheet of the component and serves as a key parameter for proper device operation within safe operating conditions.
20 V