Infineon IGP03N120H2
Infineon IGP03N120H2
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Infineon IGP03N120H2

Manufacturer No:

IGP03N120H2

Manufacturer:

Infineon

Utmel No:

1211-IGP03N120H2

Package:

TO-220-3

ECAD Model:

Description:

Insulated Gate Bipolar Transistor

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  • Vacuum packagingStep2:Vacuum packaging
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IGP03N120H2 information

Specifications
Documents & Media
Infineon IGP03N120H2 technical specifications, attributes, parameters and parts with similar specifications to Infineon IGP03N120H2.
  • Type
    Parameter
  • Package / Case

    refers to the protective housing that encases an electronic component, providing mechanical support, electrical connections, and thermal management.

    TO-220-3
  • Mounting Type

    The "Mounting Type" in electronic components refers to the method used to attach or connect a component to a circuit board or other substrate, such as through-hole, surface-mount, or panel mount.

    Through Hole
  • Supplier Device Package

    The parameter "Supplier Device Package" in electronic components refers to the physical packaging or housing of the component as provided by the supplier. It specifies the form factor, dimensions, and layout of the component, which are crucial for compatibility and integration into electronic circuits and systems. The supplier device package information typically includes details such as the package type (e.g., DIP, SOP, QFN), number of pins, pitch, and overall size, allowing engineers and designers to select the appropriate component for their specific application requirements. Understanding the supplier device package is essential for proper component selection, placement, and soldering during the manufacturing process to ensure optimal performance and reliability of the electronic system.

    PG-TO220-3-1
  • Test Conditions
    800V, 3A, 82Ohm, 15V
  • Product Status
    Active
  • Mfr
    Infineon Technologies
  • Current-Collector (Ic) (Max)
    9.6 A
  • Package
    Bulk
  • Series

    In electronic components, the "Series" refers to a group of products that share similar characteristics, designs, or functionalities, often produced by the same manufacturer. These components within a series typically have common specifications but may vary in terms of voltage, power, or packaging to meet different application needs. The series name helps identify and differentiate between various product lines within a manufacturer's catalog.

    -
  • Operating Temperature

    The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

    -40°C ~ 150°C (TJ)
  • Input Type

    Input type in electronic components refers to the classification of the signal or data that a component can accept for processing or conversion. It indicates whether the input is analog, digital, or a specific format such as TTL or CMOS. Understanding input type is crucial for ensuring compatibility between different electronic devices and circuits, as it determines how signals are interpreted and interacted with.

    Standard
  • Power - Max

    Power - Max is a parameter that specifies the maximum amount of power that an electronic component can handle without being damaged. It is typically measured in watts and indicates the upper limit of power that can be safely supplied to the component. Exceeding the maximum power rating can lead to overheating, malfunction, or permanent damage to the component. It is important to consider the power-max rating when designing circuits or systems to ensure proper operation and longevity of the electronic components.

    62.5 W
  • Voltage - Collector Emitter Breakdown (Max)

    Voltage - Collector Emitter Breakdown (Max) is a parameter that specifies the maximum voltage that can be applied between the collector and emitter terminals of a transistor or other semiconductor device before it breaks down and allows excessive current to flow. This parameter is crucial for ensuring the safe and reliable operation of the component within its specified limits. Exceeding the maximum breakdown voltage can lead to permanent damage or failure of the device. Designers and engineers must carefully consider this parameter when selecting components for their circuits to prevent potential issues and ensure proper functionality.

    1200 V
  • Vce(on) (Max) @ Vge, Ic

    The parameter "Vce(on) (Max) @ Vge, Ic" in electronic components refers to the maximum voltage drop across the collector-emitter junction of a power transistor when it is in the on-state. This parameter is specified at a certain gate-emitter voltage (Vge) and collector current (Ic). It indicates the maximum voltage that can be sustained across the collector-emitter terminals while the transistor is conducting current. This parameter is important for determining the power dissipation and efficiency of the transistor in a circuit, as well as for ensuring proper operation and reliability of the component.

    2.8V @ 15V, 3A
  • IGBT Type

    IGBT Type refers to the specific classification of Insulated Gate Bipolar Transistors, which are semiconductor devices used for switching and amplifying electronic signals. IGBT types can vary based on their voltage ratings, current handling capabilities, switching speeds, and packaging configurations. Different IGBT types are designed to optimize performance in various applications, including motor drives, power inverters, and high-frequency switching circuits. Understanding the IGBT type is crucial for selecting the appropriate component for a particular electronic design or application.

    -
  • Gate Charge

    the amount of charge that needs to be injected into the gate electrode to turn ON (drive) the MOSFET.

    22 nC
  • Current - Collector Pulsed (Icm)

    The parameter "Current - Collector Pulsed (Icm)" in electronic components refers to the maximum allowable collector current that the component can handle when operating in a pulsed mode. This parameter is crucial for devices such as transistors and power amplifiers that may experience short bursts of high current during operation. Exceeding the specified Icm rating can lead to overheating, device failure, or even permanent damage. Designers must carefully consider this parameter when selecting components to ensure reliable and safe operation within the specified limits.

    9.9 A
  • Td (on/off) @ 25°C

    The parameter "Td (on/off) @ 25°C" in electronic components refers to the thermal resistance between the device junction and the ambient environment when the device is in the on or off state at a temperature of 25°C. This parameter helps to quantify how efficiently the device can dissipate heat generated during operation. A lower thermal resistance value indicates better heat dissipation capabilities, which is crucial for maintaining the device's performance and reliability. Designers use this parameter to ensure proper thermal management and prevent overheating issues that can affect the component's functionality and lifespan.

    9.2ns/281ns
  • Switching Energy

    Switching energy is a parameter used to describe the amount of energy consumed by an electronic component during the process of switching from one state to another. It is typically measured in joules and is an important consideration in the design and evaluation of electronic devices, especially in terms of power efficiency and heat generation. Switching energy is influenced by factors such as the operating frequency, voltage levels, and the specific characteristics of the component itself. Minimizing switching energy is crucial for improving the overall performance and reliability of electronic systems.

    290µJ
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