Infineon Technologies IRG7PH46UD-EP
Infineon Technologies IRG7PH46UD-EP
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Infineon Technologies IRG7PH46UD-EP

Manufacturer No:

IRG7PH46UD-EP

Utmel No:

1211-IRG7PH46UD-EP

Package:

TO-247-3

ECAD Model:

Description:

IGBT 1200V 108A COPAK247

Quantity:

Unit Price: $6.833934

Ext Price: $6.83

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The following are some common countries' logistic time.transport
  • Prepare productStep1:Prepare product
  • Vacuum packagingStep2:Vacuum packaging
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IRG7PH46UD-EP information

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Infineon Technologies IRG7PH46UD-EP technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRG7PH46UD-EP.
  • Type
    Parameter
  • Factory Lead Time
    14 Weeks
  • Mount

    In electronic components, the term "Mount" typically refers to the method or process of physically attaching or fixing a component onto a circuit board or other electronic device. This can involve soldering, adhesive bonding, or other techniques to secure the component in place. The mounting process is crucial for ensuring proper electrical connections and mechanical stability within the electronic system. Different components may have specific mounting requirements based on their size, shape, and function, and manufacturers provide guidelines for proper mounting procedures to ensure optimal performance and reliability of the electronic device.

    Through Hole
  • Mounting Type

    The "Mounting Type" in electronic components refers to the method used to attach or connect a component to a circuit board or other substrate, such as through-hole, surface-mount, or panel mount.

    Through Hole
  • Package / Case

    refers to the protective housing that encases an electronic component, providing mechanical support, electrical connections, and thermal management.

    TO-247-3
  • Number of Pins
    3
  • Transistor Element Material

    The "Transistor Element Material" parameter in electronic components refers to the material used to construct the transistor within the component. Transistors are semiconductor devices that amplify or switch electronic signals and are a fundamental building block in electronic circuits. The material used for the transistor element can significantly impact the performance and characteristics of the component. Common materials used for transistor elements include silicon, germanium, and gallium arsenide, each with its own unique properties and suitability for different applications. The choice of transistor element material is crucial in designing electronic components to meet specific performance requirements such as speed, power efficiency, and temperature tolerance.

    SILICON
  • Collector-Emitter Breakdown Voltage
    1.2kV
  • Collector-Emitter Saturation Voltage
    2V
  • Number of Elements
    1
  • Test Conditions
    600V, 40A, 10 Ω, 15V
  • Operating Temperature

    The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

    -55°C~150°C TJ
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Tube
  • Published
    2013
  • Part Status

    Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.

    Obsolete
  • Moisture Sensitivity Level (MSL)

    Moisture Sensitivity Level (MSL) is a standardized rating that indicates the susceptibility of electronic components, particularly semiconductors, to moisture-induced damage during storage and the soldering process, defining the allowable exposure time to ambient conditions before they require special handling or baking to prevent failures

    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code

    An ECCN (Export Control Classification Number) is an alphanumeric code used by the U.S. Bureau of Industry and Security to identify and categorize electronic components and other dual-use items that may require an export license based on their technical characteristics and potential for military use.

    EAR99
  • Max Power Dissipation

    The maximum power that the MOSFET can dissipate continuously under the specified thermal conditions.

    390W
  • Peak Reflow Temperature (Cel)

    Peak Reflow Temperature (Cel) is a parameter that specifies the maximum temperature at which an electronic component can be exposed during the reflow soldering process. Reflow soldering is a common method used to attach electronic components to a circuit board. The Peak Reflow Temperature is crucial because it ensures that the component is not damaged or degraded during the soldering process. Exceeding the specified Peak Reflow Temperature can lead to issues such as component failure, reduced performance, or even permanent damage to the component. It is important for manufacturers and assemblers to adhere to the recommended Peak Reflow Temperature to ensure the reliability and functionality of the electronic components.

    NOT SPECIFIED
  • Time@Peak Reflow Temperature-Max (s)

    Time@Peak Reflow Temperature-Max (s) refers to the maximum duration that an electronic component can be exposed to the peak reflow temperature during the soldering process, which is crucial for ensuring reliable solder joint formation without damaging the component.

    NOT SPECIFIED
  • Qualification Status

    An indicator of formal certification of qualifications.

    Not Qualified
  • Rise Time-Max

    Rise Time-Max is a parameter used in electronic components to indicate the maximum time it takes for a signal to transition from a low state to a high state. It is typically measured from 10% to 90% of the output voltage swing. This parameter is crucial for assessing the speed and performance of circuits, particularly in digital signal applications where fast switching times are essential. A shorter rise time generally signifies better performance and faster response in electronic devices.

    60ns
  • Element Configuration

    The distribution of electrons of an atom or molecule (or other physical structure) in atomic or molecular orbitals.

    Single
  • Case Connection

    Case Connection refers to the method by which an electronic component's case or housing is connected to the electrical circuit. This connection is important for grounding purposes, mechanical stability, and heat dissipation. The case connection can vary depending on the type of component and its intended application. It is crucial to ensure a secure and reliable case connection to maintain the overall performance and safety of the electronic device.

    COLLECTOR
  • Input Type

    Input type in electronic components refers to the classification of the signal or data that a component can accept for processing or conversion. It indicates whether the input is analog, digital, or a specific format such as TTL or CMOS. Understanding input type is crucial for ensuring compatibility between different electronic devices and circuits, as it determines how signals are interpreted and interacted with.

    Standard
  • Power - Max

    Power - Max is a parameter that specifies the maximum amount of power that an electronic component can handle without being damaged. It is typically measured in watts and indicates the upper limit of power that can be safely supplied to the component. Exceeding the maximum power rating can lead to overheating, malfunction, or permanent damage to the component. It is important to consider the power-max rating when designing circuits or systems to ensure proper operation and longevity of the electronic components.

    390W
  • Transistor Application

    In the context of electronic components, the parameter "Transistor Application" refers to the specific purpose or function for which a transistor is designed and used. Transistors are semiconductor devices that can amplify or switch electronic signals and are commonly used in various electronic circuits. The application of a transistor can vary widely depending on its design and characteristics, such as whether it is intended for audio amplification, digital logic, power control, or radio frequency applications. Understanding the transistor application is important for selecting the right type of transistor for a particular circuit or system to ensure optimal performance and functionality.

    POWER CONTROL
  • Polarity/Channel Type

    In electronic components, the parameter "Polarity/Channel Type" refers to the characteristic that determines the direction of current flow or the type of signal that can be accommodated by the component. For components like diodes and transistors, polarity indicates the direction in which current can flow through the component, such as forward bias or reverse bias for diodes. For components like MOSFETs or JFETs, the channel type refers to whether the component is an N-channel or P-channel device, which determines the type of charge carriers that carry current through the component. Understanding the polarity or channel type of a component is crucial for proper circuit design and ensuring that the component is connected correctly to achieve the desired functionality.

    N-CHANNEL
  • Collector Emitter Voltage (VCEO)

    Collector-Emitter Voltage (VCEO) is a key parameter in electronic components, particularly in transistors. It refers to the maximum voltage that can be applied between the collector and emitter terminals of a transistor while the base terminal is open or not conducting. Exceeding this voltage limit can lead to breakdown and potential damage to the transistor. VCEO is crucial for ensuring the safe and reliable operation of the transistor within its specified limits. Designers must carefully consider VCEO when selecting transistors for a circuit to prevent overvoltage conditions that could compromise the performance and longevity of the component.

    2V
  • Max Collector Current

    Max Collector Current is a parameter used to specify the maximum amount of current that can safely flow through the collector terminal of a transistor or other electronic component without causing damage. It is typically expressed in units of amperes (A) and is an important consideration when designing circuits to ensure that the component operates within its safe operating limits. Exceeding the specified max collector current can lead to overheating, degradation of performance, or even permanent damage to the component. Designers must carefully consider this parameter when selecting components and designing circuits to ensure reliable and safe operation.

    40A
  • Reverse Recovery Time

    Reverse Recovery Time is a key parameter in semiconductor devices, particularly diodes and transistors. It refers to the time taken for a diode or transistor to switch from conducting in the forward direction to blocking in the reverse direction when the polarity of the voltage across the device is reversed. This parameter is crucial in applications where fast switching speeds are required, as a shorter reverse recovery time allows for quicker response times and improved efficiency. Reverse Recovery Time is typically specified in datasheets for electronic components and is an important consideration in circuit design to ensure optimal performance and reliability.

    140 ns
  • JEDEC-95 Code

    JEDEC-95 Code is a standardized identification system used by the Joint Electron Device Engineering Council to categorize and describe semiconductor devices. This code provides a unique alphanumeric identifier for various memory components, ensuring consistency in documentation and communication across the electronics industry. The format includes information about the type, capacity, and technology of the device, facilitating easier specification and understanding for manufacturers and engineers.

    TO-247AD
  • Voltage - Collector Emitter Breakdown (Max)

    Voltage - Collector Emitter Breakdown (Max) is a parameter that specifies the maximum voltage that can be applied between the collector and emitter terminals of a transistor or other semiconductor device before it breaks down and allows excessive current to flow. This parameter is crucial for ensuring the safe and reliable operation of the component within its specified limits. Exceeding the maximum breakdown voltage can lead to permanent damage or failure of the device. Designers and engineers must carefully consider this parameter when selecting components for their circuits to prevent potential issues and ensure proper functionality.

    1200V
  • Turn On Time

    The time that it takes a gate circuit to allow a current to reach its full value.

    80 ns
  • Vce(on) (Max) @ Vge, Ic

    The parameter "Vce(on) (Max) @ Vge, Ic" in electronic components refers to the maximum voltage drop across the collector-emitter junction of a power transistor when it is in the on-state. This parameter is specified at a certain gate-emitter voltage (Vge) and collector current (Ic). It indicates the maximum voltage that can be sustained across the collector-emitter terminals while the transistor is conducting current. This parameter is important for determining the power dissipation and efficiency of the transistor in a circuit, as well as for ensuring proper operation and reliability of the component.

    2V @ 15V, 40A
  • Turn Off Time-Nom (toff)

    Turn Off Time-Nom (toff) is a parameter in electronic components, particularly in devices like transistors and diodes. It refers to the time taken for the device to switch from the on state to the off state when a control signal is applied. This parameter is crucial in determining the switching speed and efficiency of the component. A shorter turn-off time generally indicates faster switching speeds, which can be important in applications where rapid response times are required. Manufacturers provide this specification to help engineers and designers select the right components for their specific needs and ensure optimal performance in their circuits.

    680 ns
  • IGBT Type

    IGBT Type refers to the specific classification of Insulated Gate Bipolar Transistors, which are semiconductor devices used for switching and amplifying electronic signals. IGBT types can vary based on their voltage ratings, current handling capabilities, switching speeds, and packaging configurations. Different IGBT types are designed to optimize performance in various applications, including motor drives, power inverters, and high-frequency switching circuits. Understanding the IGBT type is crucial for selecting the appropriate component for a particular electronic design or application.

    Trench
  • Gate Charge

    the amount of charge that needs to be injected into the gate electrode to turn ON (drive) the MOSFET.

    220nC
  • Current - Collector Pulsed (Icm)

    The parameter "Current - Collector Pulsed (Icm)" in electronic components refers to the maximum allowable collector current that the component can handle when operating in a pulsed mode. This parameter is crucial for devices such as transistors and power amplifiers that may experience short bursts of high current during operation. Exceeding the specified Icm rating can lead to overheating, device failure, or even permanent damage. Designers must carefully consider this parameter when selecting components to ensure reliable and safe operation within the specified limits.

    160A
  • Td (on/off) @ 25°C

    The parameter "Td (on/off) @ 25°C" in electronic components refers to the thermal resistance between the device junction and the ambient environment when the device is in the on or off state at a temperature of 25°C. This parameter helps to quantify how efficiently the device can dissipate heat generated during operation. A lower thermal resistance value indicates better heat dissipation capabilities, which is crucial for maintaining the device's performance and reliability. Designers use this parameter to ensure proper thermal management and prevent overheating issues that can affect the component's functionality and lifespan.

    45ns/410ns
  • Switching Energy

    Switching energy is a parameter used to describe the amount of energy consumed by an electronic component during the process of switching from one state to another. It is typically measured in joules and is an important consideration in the design and evaluation of electronic devices, especially in terms of power efficiency and heat generation. Switching energy is influenced by factors such as the operating frequency, voltage levels, and the specific characteristics of the component itself. Minimizing switching energy is crucial for improving the overall performance and reliability of electronic systems.

    2.61mJ (on), 1.85mJ (off)
  • Gate-Emitter Thr Voltage-Max

    Gate-Emitter Threshold Voltage-Max refers to the maximum voltage required between the gate and emitter terminals of a transistor to begin conducting. It is a critical parameter in defining the operating characteristics of transistors, particularly in field-effect transistors and bipolar junction transistors. This threshold voltage indicates the point at which the transistor will start to turn on and allows current to flow from the collector to the emitter. Understanding this parameter is essential for ensuring proper biasing and operation in electronic circuits.

    6V
  • Fall Time-Max (tf)

    The parameter "Fall Time-Max (tf)" in electronic components refers to the maximum time it takes for a signal to transition from a high level to a low level. It is a crucial specification in digital circuits as it determines the speed at which the output signal can change states. Fall time is influenced by various factors such as the internal capacitance of the component, the load connected to the output, and the driving capability of the circuit. A shorter fall time indicates faster signal transitions and can be important for ensuring proper operation and timing in electronic systems.

    60ns
  • REACH SVHC

    The parameter "REACH SVHC" in electronic components refers to the compliance with the Registration, Evaluation, Authorization, and Restriction of Chemicals (REACH) regulation regarding Substances of Very High Concern (SVHC). SVHCs are substances that may have serious effects on human health or the environment, and their use is regulated under REACH to ensure their safe handling and minimize their impact.Manufacturers of electronic components need to declare if their products contain any SVHCs above a certain threshold concentration and provide information on the safe use of these substances. This information allows customers to make informed decisions about the potential risks associated with using the components and take appropriate measures to mitigate any hazards.Ensuring compliance with REACH SVHC requirements is essential for electronics manufacturers to meet regulatory standards, protect human health and the environment, and maintain transparency in their supply chain. It also demonstrates a commitment to sustainability and responsible manufacturing practices in the electronics industry.

    No SVHC
  • RoHS Status

    RoHS means “Restriction of Certain Hazardous Substances” in the “Hazardous Substances Directive” in electrical and electronic equipment.

    ROHS3 Compliant
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IRG7PH46UD-EP                    Description

 

IGBTs are widely used as switching devices in the inverter circuit (for DC-to-AC conversion) for driving small to large motors. IGBTs for inverter applications are used in home appliances such as air conditioners and refrigerators, industrial motors, and automotive main motor controllers to improve their efficiency.



IRG7PH46UD-EP                 Features


? Low VCE (ON) trench IGBT technology

? Low switching losses

? Square RBSOA

? 100% of the parts tested for ILM

? Positive VCE (ON) temperature co-efficient

? Ultra fast soft recovery co-pak diode

? Tight parameter distribution

? Lead-Free

 

IRG7PH46UD-EP                Applications


? U.P.S.

? Welding

? Solar Inverter

? Induction Heating

 


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