

Powerex Power Semiconductors PM20CEA060
Manufacturer No:
PM20CEA060
Tiny WHSLManufacturer:
Utmel No:
1934-PM20CEA060
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Description:
Description: Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES,
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- TypeParameter
- Part Life Cycle CodeActive
- Ihs ManufacturerPOWEREX INC
- Number of Elements1
- Operating Temperature-Max90 °C
- ECCN Code
An ECCN (Export Control Classification Number) is an alphanumeric code used by the U.S. Bureau of Industry and Security to identify and categorize electronic components and other dual-use items that may require an export license based on their technical characteristics and potential for military use.
EAR99 - Reach Compliance Code
Reach Compliance Code refers to a designation indicating that electronic components meet the requirements set by the Registration, Evaluation, Authorization, and Restriction of Chemicals (REACH) regulation in the European Union. It signifies that the manufacturer has assessed and managed the chemical substances within the components to ensure safety and environmental protection. This code is vital for compliance with regulations aimed at minimizing risks associated with hazardous substances in electronic products.
unknown - Power Dissipation-Max (Abs)
Power Dissipation-Max (Abs) refers to the maximum amount of power that an electronic component can dissipate without undergoing thermal damage or degradation. This value is crucial for ensuring reliable operation, as exceeding it can result in overheating and failure. It is typically specified in watts and serves as a critical parameter for designers to determine proper heat management strategies in circuits. Properly managing the power dissipation is essential for the longevity and performance of electronic devices.
50 W - Collector Current-Max (IC)
The parameter "Collector Current-Max (IC)" in electronic components refers to the maximum amount of current that can safely flow through the collector terminal of a transistor without causing damage to the component. It is an important specification that indicates the upper limit of current that the transistor can handle under normal operating conditions. Exceeding this maximum current rating can lead to overheating and potentially result in the failure of the transistor. Designers must ensure that the collector current does not exceed this specified limit to prevent damage to the component and ensure reliable operation of the circuit.
20 A - Collector-Emitter Voltage-Max
Collector-Emitter Voltage-Max, often abbreviated as Vce(max), is a key specification in bipolar junction transistors (BJTs). It represents the maximum voltage that can be applied between the collector and emitter terminals without risking damage to the transistor. Exceeding this voltage can lead to breakdown conditions, resulting in device failure or reliability issues. This parameter is crucial for ensuring safe operation within the specified design limits of electronic circuits using transistors.
600 V - VCEsat-Max
VCEsat-Max refers to the maximum collector-emitter saturation voltage of a bipolar junction transistor (BJT) or an insulated gate bipolar transistor (IGBT). It is a crucial parameter that indicates the minimum voltage drop across the collector-emitter junction when the transistor is in saturation mode. This parameter is important for determining the efficiency and performance of the transistor in switching applications. A lower VCEsat-Max value indicates better performance and reduced power losses in the transistor during operation. Designers often consider this parameter when selecting transistors for applications where minimizing power dissipation is critical.
3.5 V