Qorvo T1G2028536-FL
Qorvo T1G2028536-FL
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Qorvo T1G2028536-FL

Manufacturer No:

T1G2028536-FL

Manufacturer:

Qorvo

Utmel No:

1980-T1G2028536-FL

Package:

NI-780

ECAD Model:

Description:

RF JFET Transistors DC-2GHz P3dB 260W Gain 18dB@1.2GHz GaN

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User Guide

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Shipping Cost

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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.transport
  • Prepare productStep1:Prepare product
  • Vacuum packagingStep2:Vacuum packaging
  • Anti-static bagStep3:Anti-static bag
  • Individual packageStep4:Individual package
  • Packaging boxStep5:Packaging box
  • Barcode shipping labelStep6:Barcode shipping label
T1G2028536-FL information

Specifications
Qorvo T1G2028536-FL technical specifications, attributes, parameters and parts with similar specifications to Qorvo T1G2028536-FL.
  • Type
    Parameter
  • Package / Case

    refers to the protective housing that encases an electronic component, providing mechanical support, electrical connections, and thermal management.

    NI-780
  • RoHS
    Details
  • Transistor Polarity
    N-Channel
  • Vds - Drain-Source Breakdown Voltage
    36 V
  • Vgs - Gate-Source Breakdown Voltage
    145 V
  • Id - Continuous Drain Current
    24 A
  • Maximum Drain Gate Voltage
    48 V
  • Maximum Operating Temperature

    the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

    + 275 C
  • Pd - Power Dissipation
    288 W
  • Mounting Styles
    SMD/SMT
  • Moisture Sensitive
    Yes
  • Factory Pack QuantityFactory Pack Quantity
    25
  • Part # Aliases
    T1G2028536 1111394
  • Unit Weight
    0.526067 oz
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Tray
  • Series

    In electronic components, the "Series" refers to a group of products that share similar characteristics, designs, or functionalities, often produced by the same manufacturer. These components within a series typically have common specifications but may vary in terms of voltage, power, or packaging to meet different application needs. The series name helps identify and differentiate between various product lines within a manufacturer's catalog.

    T1G2028536
  • Type
    GaN SiC HEMT
  • Operating Frequency

    Operating frequency is the frequency at which the communications are being made with the total bandwidth occupied by the carrier signal with modulation. Usually bandwidth of the antenna will be wider than the bandwidth of the signal so that more than one center frequency the antenna can be put in to effective use.

    2 GHz
  • Configuration

    The parameter "Configuration" in electronic components refers to the specific arrangement or setup of the components within a circuit or system. It encompasses how individual elements are interconnected and their physical layout. Configuration can affect the functionality, performance, and efficiency of the electronic system, and may influence factors such as signal flow, impedance, and power distribution. Understanding the configuration is essential for design, troubleshooting, and optimizing electronic devices.

    Single
  • Output Power

    That power available at a specified output of a device under specified conditions of operation.

    260 W
  • Transistor Type

    Transistor type refers to the classification of transistors based on their operation and construction. The two primary types are bipolar junction transistors (BJTs) and field-effect transistors (FETs). BJTs use current to control the flow of current, while FETs utilize voltage to control current flow. Each type has its own subtypes, such as NPN and PNP for BJTs, and MOSFETs and JFETs for FETs, impacting their applications and characteristics in electronic circuits.

    HEMT
  • Gain

    In electronic components, "Gain" refers to the ratio of the output signal amplitude to the input signal amplitude. It is a measure of the amplification provided by the component, such as a transistor or operational amplifier. Gain is typically expressed in decibels (dB) or as a numerical value, indicating how much the signal is amplified by the component.A higher gain value indicates a greater amplification of the input signal, while a lower gain value indicates less amplification. Gain is an important parameter in designing and analyzing electronic circuits, as it determines the overall performance and functionality of the system. Different components have different gain characteristics, and understanding the gain of a component is crucial for achieving the desired signal processing or amplification in electronic systems.

    20.8 dB
  • Product

    In the context of electronic components, the parameter "Product" typically refers to the specific item or device being discussed or analyzed. It can refer to a physical electronic component such as a resistor, capacitor, transistor, or integrated circuit. The product parameter may also encompass more complex electronic devices like sensors, displays, microcontrollers, or communication modules.Understanding the product parameter is crucial in electronics as it helps identify the characteristics, specifications, and functionality of the component or device in question. This information is essential for selecting the right components for a circuit design, troubleshooting issues, or comparing different products for a particular application. Manufacturers often provide detailed product datasheets that outline key specifications, performance characteristics, and application guidelines to assist engineers and designers in utilizing the component effectively.

    RF Power Transistor
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