STMicroelectronics STGB30M65DF2
STMicroelectronics STGB30M65DF2
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STMicroelectronics STGB30M65DF2

Manufacturer No:

STGB30M65DF2

Manufacturer:

STMicroelectronics

Utmel No:

2381-STGB30M65DF2

Package:

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

ECAD Model:

Description:

IGBT 650V 30A D2PAK

Quantity:

Unit Price: $1.634560

Ext Price: $1.63

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STGB30M65DF2 information

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STMicroelectronics STGB30M65DF2 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STGB30M65DF2.
  • Type
    Parameter
  • Lifecycle Status

    Lifecycle Status refers to the current stage of an electronic component in its product life cycle, indicating whether it is active, obsolete, or transitioning between these states. An active status means the component is in production and available for purchase. An obsolete status indicates that the component is no longer being manufactured or supported, and manufacturers typically provide a limited time frame for support. Understanding the lifecycle status is crucial for design engineers to ensure continuity and reliability in their projects.

    ACTIVE (Last Updated: 7 months ago)
  • Factory Lead Time
    30 Weeks
  • Mount

    In electronic components, the term "Mount" typically refers to the method or process of physically attaching or fixing a component onto a circuit board or other electronic device. This can involve soldering, adhesive bonding, or other techniques to secure the component in place. The mounting process is crucial for ensuring proper electrical connections and mechanical stability within the electronic system. Different components may have specific mounting requirements based on their size, shape, and function, and manufacturers provide guidelines for proper mounting procedures to ensure optimal performance and reliability of the electronic device.

    Surface Mount
  • Mounting Type

    The "Mounting Type" in electronic components refers to the method used to attach or connect a component to a circuit board or other substrate, such as through-hole, surface-mount, or panel mount.

    Surface Mount
  • Package / Case

    refers to the protective housing that encases an electronic component, providing mechanical support, electrical connections, and thermal management.

    TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Number of Pins
    3
  • Collector-Emitter Breakdown Voltage
    650V
  • Collector-Emitter Saturation Voltage
    1.55V
  • Test Conditions
    400V, 30A, 10 Ω, 15V
  • Operating Temperature

    The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

    -55°C~175°C TJ
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Cut Tape (CT)
  • Part Status

    Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.

    Active
  • Moisture Sensitivity Level (MSL)

    Moisture Sensitivity Level (MSL) is a standardized rating that indicates the susceptibility of electronic components, particularly semiconductors, to moisture-induced damage during storage and the soldering process, defining the allowable exposure time to ambient conditions before they require special handling or baking to prevent failures

    1 (Unlimited)
  • ECCN Code

    An ECCN (Export Control Classification Number) is an alphanumeric code used by the U.S. Bureau of Industry and Security to identify and categorize electronic components and other dual-use items that may require an export license based on their technical characteristics and potential for military use.

    EAR99
  • Max Power Dissipation

    The maximum power that the MOSFET can dissipate continuously under the specified thermal conditions.

    258W
  • Peak Reflow Temperature (Cel)

    Peak Reflow Temperature (Cel) is a parameter that specifies the maximum temperature at which an electronic component can be exposed during the reflow soldering process. Reflow soldering is a common method used to attach electronic components to a circuit board. The Peak Reflow Temperature is crucial because it ensures that the component is not damaged or degraded during the soldering process. Exceeding the specified Peak Reflow Temperature can lead to issues such as component failure, reduced performance, or even permanent damage to the component. It is important for manufacturers and assemblers to adhere to the recommended Peak Reflow Temperature to ensure the reliability and functionality of the electronic components.

    NOT SPECIFIED
  • Time@Peak Reflow Temperature-Max (s)

    Time@Peak Reflow Temperature-Max (s) refers to the maximum duration that an electronic component can be exposed to the peak reflow temperature during the soldering process, which is crucial for ensuring reliable solder joint formation without damaging the component.

    NOT SPECIFIED
  • Base Part Number

    The "Base Part Number" (BPN) in electronic components serves a similar purpose to the "Base Product Number." It refers to the primary identifier for a component that captures the essential characteristics shared by a group of similar components. The BPN provides a fundamental way to reference a family or series of components without specifying all the variations and specific details.

    STGB30
  • Element Configuration

    The distribution of electrons of an atom or molecule (or other physical structure) in atomic or molecular orbitals.

    Single
  • Input Type

    Input type in electronic components refers to the classification of the signal or data that a component can accept for processing or conversion. It indicates whether the input is analog, digital, or a specific format such as TTL or CMOS. Understanding input type is crucial for ensuring compatibility between different electronic devices and circuits, as it determines how signals are interpreted and interacted with.

    Standard
  • Power - Max

    Power - Max is a parameter that specifies the maximum amount of power that an electronic component can handle without being damaged. It is typically measured in watts and indicates the upper limit of power that can be safely supplied to the component. Exceeding the maximum power rating can lead to overheating, malfunction, or permanent damage to the component. It is important to consider the power-max rating when designing circuits or systems to ensure proper operation and longevity of the electronic components.

    258W
  • Collector Emitter Voltage (VCEO)

    Collector-Emitter Voltage (VCEO) is a key parameter in electronic components, particularly in transistors. It refers to the maximum voltage that can be applied between the collector and emitter terminals of a transistor while the base terminal is open or not conducting. Exceeding this voltage limit can lead to breakdown and potential damage to the transistor. VCEO is crucial for ensuring the safe and reliable operation of the transistor within its specified limits. Designers must carefully consider VCEO when selecting transistors for a circuit to prevent overvoltage conditions that could compromise the performance and longevity of the component.

    2V
  • Max Collector Current

    Max Collector Current is a parameter used to specify the maximum amount of current that can safely flow through the collector terminal of a transistor or other electronic component without causing damage. It is typically expressed in units of amperes (A) and is an important consideration when designing circuits to ensure that the component operates within its safe operating limits. Exceeding the specified max collector current can lead to overheating, degradation of performance, or even permanent damage to the component. Designers must carefully consider this parameter when selecting components and designing circuits to ensure reliable and safe operation.

    60A
  • Reverse Recovery Time

    Reverse Recovery Time is a key parameter in semiconductor devices, particularly diodes and transistors. It refers to the time taken for a diode or transistor to switch from conducting in the forward direction to blocking in the reverse direction when the polarity of the voltage across the device is reversed. This parameter is crucial in applications where fast switching speeds are required, as a shorter reverse recovery time allows for quicker response times and improved efficiency. Reverse Recovery Time is typically specified in datasheets for electronic components and is an important consideration in circuit design to ensure optimal performance and reliability.

    140 ns
  • Max Breakdown Voltage

    The "Max Breakdown Voltage" of an electronic component refers to the maximum voltage that the component can withstand across its terminals before it breaks down and allows current to flow uncontrollably. This parameter is crucial in determining the operating limits and safety margins of the component in a circuit. Exceeding the maximum breakdown voltage can lead to permanent damage or failure of the component. It is typically specified by the manufacturer in datasheets to guide engineers and designers in selecting the appropriate components for their applications.

    650V
  • Vce(on) (Max) @ Vge, Ic

    The parameter "Vce(on) (Max) @ Vge, Ic" in electronic components refers to the maximum voltage drop across the collector-emitter junction of a power transistor when it is in the on-state. This parameter is specified at a certain gate-emitter voltage (Vge) and collector current (Ic). It indicates the maximum voltage that can be sustained across the collector-emitter terminals while the transistor is conducting current. This parameter is important for determining the power dissipation and efficiency of the transistor in a circuit, as well as for ensuring proper operation and reliability of the component.

    2V @ 15V, 30A
  • IGBT Type

    IGBT Type refers to the specific classification of Insulated Gate Bipolar Transistors, which are semiconductor devices used for switching and amplifying electronic signals. IGBT types can vary based on their voltage ratings, current handling capabilities, switching speeds, and packaging configurations. Different IGBT types are designed to optimize performance in various applications, including motor drives, power inverters, and high-frequency switching circuits. Understanding the IGBT type is crucial for selecting the appropriate component for a particular electronic design or application.

    Trench Field Stop
  • Gate Charge

    the amount of charge that needs to be injected into the gate electrode to turn ON (drive) the MOSFET.

    80nC
  • Current - Collector Pulsed (Icm)

    The parameter "Current - Collector Pulsed (Icm)" in electronic components refers to the maximum allowable collector current that the component can handle when operating in a pulsed mode. This parameter is crucial for devices such as transistors and power amplifiers that may experience short bursts of high current during operation. Exceeding the specified Icm rating can lead to overheating, device failure, or even permanent damage. Designers must carefully consider this parameter when selecting components to ensure reliable and safe operation within the specified limits.

    120A
  • Td (on/off) @ 25°C

    The parameter "Td (on/off) @ 25°C" in electronic components refers to the thermal resistance between the device junction and the ambient environment when the device is in the on or off state at a temperature of 25°C. This parameter helps to quantify how efficiently the device can dissipate heat generated during operation. A lower thermal resistance value indicates better heat dissipation capabilities, which is crucial for maintaining the device's performance and reliability. Designers use this parameter to ensure proper thermal management and prevent overheating issues that can affect the component's functionality and lifespan.

    31.6ns/115ns
  • Switching Energy

    Switching energy is a parameter used to describe the amount of energy consumed by an electronic component during the process of switching from one state to another. It is typically measured in joules and is an important consideration in the design and evaluation of electronic devices, especially in terms of power efficiency and heat generation. Switching energy is influenced by factors such as the operating frequency, voltage levels, and the specific characteristics of the component itself. Minimizing switching energy is crucial for improving the overall performance and reliability of electronic systems.

    300μJ (on), 960μJ (off)
  • REACH SVHC

    The parameter "REACH SVHC" in electronic components refers to the compliance with the Registration, Evaluation, Authorization, and Restriction of Chemicals (REACH) regulation regarding Substances of Very High Concern (SVHC). SVHCs are substances that may have serious effects on human health or the environment, and their use is regulated under REACH to ensure their safe handling and minimize their impact.Manufacturers of electronic components need to declare if their products contain any SVHCs above a certain threshold concentration and provide information on the safe use of these substances. This information allows customers to make informed decisions about the potential risks associated with using the components and take appropriate measures to mitigate any hazards.Ensuring compliance with REACH SVHC requirements is essential for electronics manufacturers to meet regulatory standards, protect human health and the environment, and maintain transparency in their supply chain. It also demonstrates a commitment to sustainability and responsible manufacturing practices in the electronics industry.

    No SVHC
  • RoHS Status

    RoHS means “Restriction of Certain Hazardous Substances” in the “Hazardous Substances Directive” in electrical and electronic equipment.

    ROHS3 Compliant
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STGB30M65DF2 Description


The STGB30M65DF2 is an IGBT that was created using a proprietary trench gate field-stop topology. The STGB30M65DF2 is part of the M family of IGBTs, which provide the best blend of performance and efficiency in inverter systems where low-loss and short-circuit functionality are critical. In addition, the positive VCE(sat) temperature coefficient and narrow parameter distribution make paralleling safer.



STGB30M65DF2 Features


  • Short-circuit withstand time of 6 seconds

  • @ IC = 30 A, VCE(sat) = 1.55 V (typ.)

  • a tight distribution of parameters

  • Paralleling is safer, and the thermal resistance is lower.

  • Antiparallel diode with a soft and quick recovery time



STGB30M65DF2 Applications


  • Motor control

  • UPS

  • PFC


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