Taiwan Semiconductor BZT52B8V2
Taiwan Semiconductor BZT52B8V2
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Taiwan Semiconductor BZT52B8V2

Manufacturer No:

BZT52B8V2

Utmel No:

2436-BZT52B8V2

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ECAD Model:

Description:

8.2 V 500 mW

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BZT52B8V2 information

Specifications
Product Details
Taiwan Semiconductor BZT52B8V2 technical specifications, attributes, parameters and parts with similar specifications to Taiwan Semiconductor BZT52B8V2.
  • Type
    Parameter
  • Lifecycle Status

    Lifecycle Status refers to the current stage of an electronic component in its product life cycle, indicating whether it is active, obsolete, or transitioning between these states. An active status means the component is in production and available for purchase. An obsolete status indicates that the component is no longer being manufactured or supported, and manufacturers typically provide a limited time frame for support. Understanding the lifecycle status is crucial for design engineers to ensure continuity and reliability in their projects.

    Production (Last Updated: 2 years ago)
  • Mount

    In electronic components, the term "Mount" typically refers to the method or process of physically attaching or fixing a component onto a circuit board or other electronic device. This can involve soldering, adhesive bonding, or other techniques to secure the component in place. The mounting process is crucial for ensuring proper electrical connections and mechanical stability within the electronic system. Different components may have specific mounting requirements based on their size, shape, and function, and manufacturers provide guidelines for proper mounting procedures to ensure optimal performance and reliability of the electronic device.

    Surface Mount
  • Number of Pins
    2
  • Breakdown Voltage / V
    51 V
  • Reverse Stand-off Voltage
    43.6 V
  • Manufacturer Lifecycle Status
    ACTIVE (Last Updated: 2 years ago)
  • RoHS
    Non-Compliant
  • Rohs Code
    Yes
  • Manufacturer Part Number
    BZT52B8V2
  • Manufacturer
    Diotec Semiconductor AG
  • Part Life Cycle Code
    Active
  • Ihs Manufacturer
    DIOTEC SEMICONDUCTOR AG
  • Risk Rank
    5.13
  • ECCN Code

    An ECCN (Export Control Classification Number) is an alphanumeric code used by the U.S. Bureau of Industry and Security to identify and categorize electronic components and other dual-use items that may require an export license based on their technical characteristics and potential for military use.

    EAR99
  • Max Operating Temperature

    The Maximum Operating Temperature is the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

    150 °C
  • Min Operating Temperature

    The "Min Operating Temperature" parameter in electronic components refers to the lowest temperature at which the component is designed to operate effectively and reliably. This parameter is crucial for ensuring the proper functioning and longevity of the component, as operating below this temperature may lead to performance issues or even damage. Manufacturers specify the minimum operating temperature to provide guidance to users on the environmental conditions in which the component can safely operate. It is important to adhere to this parameter to prevent malfunctions and ensure the overall reliability of the electronic system.

    -65 °C
  • HTS Code

    HTS (Harmonized Tariff Schedule) codes are product classification codes between 8-1 digits. The first six digits are an HS code, and the countries of import assign the subsequent digits to provide additional classification. U.S. HTS codes are 1 digits and are administered by the U.S. International Trade Commission.

    8541.10.00.50
  • Max Power Dissipation

    The maximum power that the MOSFET can dissipate continuously under the specified thermal conditions.

    500 mW
  • Reach Compliance Code

    Reach Compliance Code refers to a designation indicating that electronic components meet the requirements set by the Registration, Evaluation, Authorization, and Restriction of Chemicals (REACH) regulation in the European Union. It signifies that the manufacturer has assessed and managed the chemical substances within the components to ensure safety and environmental protection. This code is vital for compliance with regulations aimed at minimizing risks associated with hazardous substances in electronic products.

    compliant
  • Impedance

    In electrical engineering, impedance is the opposition to alternating current presented by the combined effect of resistance and reactance in a circuit.

    15 Ω
  • Element Configuration

    The distribution of electrons of an atom or molecule (or other physical structure) in atomic or molecular orbitals.

    Single
  • Power Dissipation

    the process by which an electronic or electrical device produces heat (energy loss or waste) as an undesirable derivative of its primary action.

    500 mW
  • Max Reverse Leakage Current

    Max Reverse Leakage Current refers to the maximum amount of current that can flow through a semiconductor device, such as a diode or transistor, when it is reverse biased. This current is an important parameter as it indicates the level of unintended current that can flow when the device is not conducting in the forward direction. High values of reverse leakage current can lead to power loss, reduced efficiency, and may affect the performance and reliability of electronic circuits. It is particularly critical in applications where precise current control and low power consumption are necessary.

    1 µA
  • Clamping Voltage

    Clamping voltage is a term used in electronic components, particularly in devices like diodes and transient voltage suppressors. It refers to the maximum voltage level at which the component can effectively limit or clamp the voltage across its terminals. When the voltage across the component exceeds the clamping voltage, the component conducts and effectively limits the voltage to that level, protecting the circuit from overvoltage conditions. Clamping voltage is an important parameter to consider when selecting components for applications where voltage spikes or surges may occur, as it determines the level at which the component will start to protect the circuit.

    70.1 V
  • Peak Pulse Current

    The peak pulse power rating of a TVS diode is defined as the instantaneous power dissipated by a device for a given pulse condition, and is a measure of the power that is dissipated in the TVS junction during a given transient event.

    21.4 A
  • Peak Pulse Power

    Peak Pulse Power is a parameter used to specify the maximum amount of power that an electronic component can handle during a transient event, such as a surge or spike in voltage or current. It indicates the maximum power dissipation capability of the component for a short duration. This parameter is important for protecting electronic circuits from damage caused by sudden high-energy events. Peak Pulse Power is typically expressed in watts and is crucial for selecting components that can withstand transient overloads without failing. It helps ensure the reliability and longevity of electronic systems in various applications.

    1.5 kW
  • Test Current

    Test Current refers to a specified amount of electrical current applied to an electronic component during testing to evaluate its performance and characteristics. This current is typically defined by manufacturers to ensure that the component operates within its designed parameters. By measuring how the component reacts to this test current, engineers can determine its reliability, efficiency, and suitability for specific applications.

    5 mA
  • Forward Voltage

    the amount of voltage needed to get current to flow across a diode.

    1 V
  • Zener Voltage

    The Zener voltage is a crucial parameter in Zener diodes, which are specialized semiconductor devices designed to maintain a constant voltage across their terminals when operated in the reverse-biased mode. The Zener voltage, also known as the breakdown voltage, is the voltage at which the Zener diode starts conducting in the reverse direction. This voltage is carefully controlled during the manufacturing process and is a key characteristic that determines the diode's functionality in voltage regulation and protection circuits. Zener diodes are commonly used in various electronic applications to stabilize voltage levels and protect sensitive components from voltage spikes.

    8.2 V
  • Reverse Recovery Time

    Reverse Recovery Time is a key parameter in semiconductor devices, particularly diodes and transistors. It refers to the time taken for a diode or transistor to switch from conducting in the forward direction to blocking in the reverse direction when the polarity of the voltage across the device is reversed. This parameter is crucial in applications where fast switching speeds are required, as a shorter reverse recovery time allows for quicker response times and improved efficiency. Reverse Recovery Time is typically specified in datasheets for electronic components and is an important consideration in circuit design to ensure optimal performance and reliability.

    50 ns
  • Max Repetitive Reverse Voltage (Vrrm)

    The Max Repetitive Reverse Voltage (Vrrm) is a crucial parameter in electronic components, particularly in diodes and transistors. It refers to the maximum voltage that can be applied across the component in the reverse direction without causing damage. This parameter is important for ensuring the proper functioning and longevity of the component in circuits where reverse voltage may be present. Exceeding the Vrrm rating can lead to breakdown and failure of the component, so it is essential to carefully consider this specification when designing or selecting components for a circuit.

    250 V
  • Voltage Tolerance

    The voltage tolerance level for the electrical auxiliaries is defined by the standard. The maximum and minimum nominal voltages are defined by the tolerance level.

    2 %
  • Max Breakdown Voltage

    The "Max Breakdown Voltage" of an electronic component refers to the maximum voltage that the component can withstand across its terminals before it breaks down and allows current to flow uncontrollably. This parameter is crucial in determining the operating limits and safety margins of the component in a circuit. Exceeding the maximum breakdown voltage can lead to permanent damage or failure of the component. It is typically specified by the manufacturer in datasheets to guide engineers and designers in selecting the appropriate components for their applications.

    53.6 V
  • Max Forward Surge Current (Ifsm)

    Max Forward Surge Current (Ifsm) is a parameter used to specify the maximum peak current that a diode or other electronic component can withstand for a short duration during a surge event. Surge currents can occur due to sudden changes in voltage or power supply fluctuations, and the Ifsm rating helps determine the component's ability to handle such transient overloads without being damaged. It is important to consider the Ifsm rating when selecting components for applications where surge currents are expected, such as in power supplies, motor drives, and other high-power circuits. Exceeding the Ifsm rating can lead to overheating, degradation, or failure of the component, so it is crucial to ensure that the chosen component can safely handle the expected surge currents in the circuit.

    2.5 A
  • Max Junction Temperature (Tj)

    Max Junction Temperature (Tj) refers to the maximum allowable temperature at the junction of a semiconductor device, such as a transistor or integrated circuit. It is a critical parameter that influences the performance, reliability, and lifespan of the component. Exceeding this temperature can lead to thermal runaway, breakdown, or permanent damage to the device. Proper thermal management is essential to ensure the junction temperature remains within safe operating limits during device operation.

    150 °C
  • Min Breakdown Voltage

    Min Breakdown Voltage is the minimum voltage at which an electronic component, typically a diode or transistor, begins to conduct electricity in the reverse direction. When the applied voltage exceeds this threshold, the component can undergo breakdown, leading to a significant increase in reverse current. This parameter is crucial for ensuring that components operate safely within their designed voltage limits to prevent damage or malfunction.

    48.5 V
  • Width
    1.7 mm
  • Height
    1 mm
  • Length
    2.7 mm
0 Similar Products Remaining

BZT52B8V2 Overview

Reverse leakage currents can reach 1 µA.

BZT52B8V2 Features

Reverse leakage current reaches 1 µA

BZT52B8V2 Applications

There are a lot of Taiwan Semiconductor
BZT52B8V2 applications of zener single diodes.