Toshiba Semiconductor and Storage 2SK2145-BL(TE85L,F
Toshiba Semiconductor and Storage 2SK2145-BL(TE85L,F
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Toshiba Semiconductor and Storage 2SK2145-BL(TE85L,F

Manufacturer No:

2SK2145-BL(TE85L,F

Utmel No:

2541-2SK2145-BL(TE85L,F

Package:

SC-74A, SOT-753

ECAD Model:

Description:

JFET N-Ch Junction FET 10mA -50V VGDS

Quantity:

Unit Price: $0.787267

Ext Price: $0.79

Delivery:

DHLTNTUPSFedExSF-Express

Payment:

paypalvisadiscovermastercard

In Stock : 1817

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.787267

    $0.79

  • 10

    $0.742705

    $7.43

  • 100

    $0.700665

    $70.07

  • 500

    $0.661005

    $330.50

  • 1000

    $0.623589

    $623.59

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.transport
  • Prepare productStep1:Prepare product
  • Vacuum packagingStep2:Vacuum packaging
  • Anti-static bagStep3:Anti-static bag
  • Individual packageStep4:Individual package
  • Packaging boxStep5:Packaging box
  • Barcode shipping labelStep6:Barcode shipping label
2SK2145-BL(TE85L,F information

Specifications
Toshiba Semiconductor and Storage 2SK2145-BL(TE85L,F technical specifications, attributes, parameters and parts with similar specifications to Toshiba Semiconductor and Storage 2SK2145-BL(TE85L,F.
  • Type
    Parameter
  • Factory Lead Time
    52 Weeks
  • Mount

    In electronic components, the term "Mount" typically refers to the method or process of physically attaching or fixing a component onto a circuit board or other electronic device. This can involve soldering, adhesive bonding, or other techniques to secure the component in place. The mounting process is crucial for ensuring proper electrical connections and mechanical stability within the electronic system. Different components may have specific mounting requirements based on their size, shape, and function, and manufacturers provide guidelines for proper mounting procedures to ensure optimal performance and reliability of the electronic device.

    Surface Mount
  • Mounting Type

    The "Mounting Type" in electronic components refers to the method used to attach or connect a component to a circuit board or other substrate, such as through-hole, surface-mount, or panel mount.

    Surface Mount
  • Package / Case

    refers to the protective housing that encases an electronic component, providing mechanical support, electrical connections, and thermal management.

    SC-74A, SOT-753
  • Operating Temperature

    The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

    125°C TJ
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Cut Tape (CT)
  • Published
    2014
  • Pbfree Code

    The "Pbfree Code" parameter in electronic components refers to the code or marking used to indicate that the component is lead-free. Lead (Pb) is a toxic substance that has been widely used in electronic components for many years, but due to environmental concerns, there has been a shift towards lead-free alternatives. The Pbfree Code helps manufacturers and users easily identify components that do not contain lead, ensuring compliance with regulations and promoting environmentally friendly practices. It is important to pay attention to the Pbfree Code when selecting electronic components to ensure they meet the necessary requirements for lead-free applications.

    yes
  • Part Status

    Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.

    Active
  • Moisture Sensitivity Level (MSL)

    Moisture Sensitivity Level (MSL) is a standardized rating that indicates the susceptibility of electronic components, particularly semiconductors, to moisture-induced damage during storage and the soldering process, defining the allowable exposure time to ambient conditions before they require special handling or baking to prevent failures

    1 (Unlimited)
  • Max Power Dissipation

    The maximum power that the MOSFET can dissipate continuously under the specified thermal conditions.

    300mW
  • Element Configuration

    The distribution of electrons of an atom or molecule (or other physical structure) in atomic or molecular orbitals.

    Dual
  • FET Type

    "FET Type" refers to the type of Field-Effect Transistor (FET) being used in an electronic component. FETs are three-terminal semiconductor devices that can be classified into different types based on their construction and operation. The main types of FETs include Metal-Oxide-Semiconductor FETs (MOSFETs), Junction FETs (JFETs), and Insulated-Gate Bipolar Transistors (IGBTs).Each type of FET has its own unique characteristics and applications. MOSFETs are commonly used in digital circuits due to their high input impedance and low power consumption. JFETs are often used in low-noise amplifiers and switching circuits. IGBTs combine the high input impedance of MOSFETs with the high current-carrying capability of bipolar transistors, making them suitable for high-power applications like motor control and power inverters.When selecting an electronic component, understanding the FET type is crucial as it determines the device's performance and suitability for a specific application. It is important to consider factors such as voltage ratings, current handling capabilities, switching speeds, and power dissipation when choosing the right FET type for a particular circuit design.

    2 N-Channel (Dual)
  • Input Capacitance (Ciss) (Max) @ Vds

    The parameter "Input Capacitance (Ciss) (Max) @ Vds" in electronic components refers to the maximum input capacitance measured at a specific drain-source voltage (Vds). Input capacitance is a crucial parameter in field-effect transistors (FETs) and power MOSFETs, as it represents the total capacitance at the input terminal of the device. This capacitance affects the device's switching speed and overall performance, as it influences the time required for charging and discharging during operation. Manufacturers provide this parameter to help designers understand the device's input characteristics and make informed decisions when integrating it into a circuit.

    13pF @ 10V
  • Continuous Drain Current (ID)

    Continuous Drain Current (ID) is a key parameter in electronic components, particularly in field-effect transistors (FETs) such as MOSFETs. It refers to the maximum current that can flow continuously through the drain terminal of the FET without causing damage to the component. This parameter is crucial for determining the power handling capability of the FET and is specified by the manufacturer in the component's datasheet. Designers must ensure that the actual operating current does not exceed the specified Continuous Drain Current to prevent overheating and potential failure of the component.

    14mA
  • Gate to Source Voltage (Vgs)

    The Gate to Source Voltage (Vgs) is a crucial parameter in electronic components, particularly in field-effect transistors (FETs) such as MOSFETs. It refers to the voltage difference between the gate and source terminals of the FET. This voltage determines the conductivity of the FET and controls the flow of current through the device. By varying the Vgs, the FET can be switched on or off, allowing for precise control of electronic circuits. Understanding and properly managing the Vgs is essential for ensuring the reliable and efficient operation of FET-based circuits.

    -1.5V
  • Current - Drain (Idss) @ Vds (Vgs=0)

    The parameter "Current - Drain (Idss) @ Vds (Vgs=0)" in electronic components refers to the maximum drain current that flows through the device when the gate-source voltage (Vgs) is zero. This parameter is typically specified for field-effect transistors (FETs) and is an important characteristic that indicates the device's maximum current-carrying capacity in the off state. It helps in determining the saturation current of the FET and is crucial for designing circuits where high current handling capability is required. Manufacturers provide this parameter in the datasheet of the component to assist engineers and designers in selecting the appropriate component for their applications.

    6mA @ 10V
  • Voltage - Cutoff (VGS off) @ Id

    Voltage - Cutoff (VGS off) @ Id refers to the gate-source voltage at which a field-effect transistor (FET) or similar device ceases to conduct, effectively turning it off. This parameter indicates the threshold voltage that separates the conducting state from the cutoff state for a specified drain current (Id). It is crucial for determining the operating characteristics of the device in various applications, ensuring efficient switching and control in electronic circuits.

    200mV @ 100nA
  • RoHS Status

    RoHS means “Restriction of Certain Hazardous Substances” in the “Hazardous Substances Directive” in electrical and electronic equipment.

    RoHS Compliant
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