Diotec Semiconductor BCP55-16-AQ
Diotec Semiconductor BCP55-16-AQ
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Diotec Semiconductor BCP55-16-AQ

Manufacturer No:

BCP55-16-AQ

Utmel No:

672-BCP55-16-AQ

Package:

TO-261-4, TO-261AA

Datasheet:

bcp55.pdf

ECAD Model:

Description:

BCP55-16-AQ datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diotec Semiconductor stock available at Utmel

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Unit Price: $0.179342

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BCP55-16-AQ information

Specifications
Documents & Media
Product Details
Diotec Semiconductor BCP55-16-AQ technical specifications, attributes, parameters and parts with similar specifications to Diotec Semiconductor BCP55-16-AQ.
  • Type
    Parameter
  • Mounting Type

    The "Mounting Type" in electronic components refers to the method used to attach or connect a component to a circuit board or other substrate, such as through-hole, surface-mount, or panel mount.

    Surface Mount
  • Package / Case

    refers to the protective housing that encases an electronic component, providing mechanical support, electrical connections, and thermal management.

    TO-261-4, TO-261AA
  • Supplier Device Package

    The parameter "Supplier Device Package" in electronic components refers to the physical packaging or housing of the component as provided by the supplier. It specifies the form factor, dimensions, and layout of the component, which are crucial for compatibility and integration into electronic circuits and systems. The supplier device package information typically includes details such as the package type (e.g., DIP, SOP, QFN), number of pins, pitch, and overall size, allowing engineers and designers to select the appropriate component for their specific application requirements. Understanding the supplier device package is essential for proper component selection, placement, and soldering during the manufacturing process to ensure optimal performance and reliability of the electronic system.

    SOT-223
  • Mfr
    Diotec Semiconductor
  • Current-Collector (Ic) (Max)
    1 A
  • Qualification
    AEC-Q101
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Bulk
  • Operating Temperature

    The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

    -55°C ~ 150°C (TJ)
  • Part Status

    Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.

    Active
  • Power - Max

    Power - Max is a parameter that specifies the maximum amount of power that an electronic component can handle without being damaged. It is typically measured in watts and indicates the upper limit of power that can be safely supplied to the component. Exceeding the maximum power rating can lead to overheating, malfunction, or permanent damage to the component. It is important to consider the power-max rating when designing circuits or systems to ensure proper operation and longevity of the electronic components.

    1.3 W
  • Transistor Type

    Transistor type refers to the classification of transistors based on their operation and construction. The two primary types are bipolar junction transistors (BJTs) and field-effect transistors (FETs). BJTs use current to control the flow of current, while FETs utilize voltage to control current flow. Each type has its own subtypes, such as NPN and PNP for BJTs, and MOSFETs and JFETs for FETs, impacting their applications and characteristics in electronic circuits.

    NPN
  • DC Current Gain (hFE) (Min) @ Ic, Vce

    The parameter "DC Current Gain (hFE) (Min) @ Ic, Vce" in electronic components refers to the minimum value of the DC current gain, denoted as hFE, under specific operating conditions of collector current (Ic) and collector-emitter voltage (Vce). The DC current gain hFE represents the ratio of the collector current to the base current in a bipolar junction transistor (BJT), indicating the amplification capability of the transistor. The minimum hFE value at a given Ic and Vce helps determine the transistor's performance and efficiency in amplifying signals within a circuit. Designers use this parameter to ensure proper transistor selection and performance in various electronic applications.

    100 @ 150mA, 2V
  • Current - Collector Cutoff (Max)

    The parameter "Current - Collector Cutoff (Max)" refers to the maximum current at which a transistor or other electronic component will cease to conduct current between the collector and emitter terminals. This parameter is important in determining the maximum current that can flow through the component when it is in the cutoff state. Exceeding this maximum cutoff current can lead to malfunction or damage of the component. It is typically specified in the component's datasheet and is crucial for proper circuit design and operation.

    100nA (ICBO)
  • Vce Saturation (Max) @ Ib, Ic

    The parameter "Vce Saturation (Max) @ Ib, Ic" in electronic components refers to the maximum voltage drop across the collector-emitter junction when the transistor is in saturation mode. This parameter is specified at a certain base current (Ib) and collector current (Ic) levels. It indicates the minimum voltage required to keep the transistor fully conducting in saturation mode, ensuring that the transistor operates efficiently and does not enter the cutoff region. Designers use this parameter to ensure proper transistor operation and to prevent overheating or damage to the component.

    500mV @ 50mA, 500mA
  • Voltage - Collector Emitter Breakdown (Max)

    Voltage - Collector Emitter Breakdown (Max) is a parameter that specifies the maximum voltage that can be applied between the collector and emitter terminals of a transistor or other semiconductor device before it breaks down and allows excessive current to flow. This parameter is crucial for ensuring the safe and reliable operation of the component within its specified limits. Exceeding the maximum breakdown voltage can lead to permanent damage or failure of the device. Designers and engineers must carefully consider this parameter when selecting components for their circuits to prevent potential issues and ensure proper functionality.

    80 V
  • Frequency - Transition

    The parameter "Frequency - Transition" in electronic components refers to the maximum frequency at which a signal transition can occur within the component. It is a crucial specification for digital circuits as it determines the speed at which data can be processed and transmitted. A higher frequency transition allows for faster operation and better performance of the electronic component. It is typically measured in hertz (Hz) or megahertz (MHz) and is specified by the manufacturer to ensure proper functioning of the component within a given frequency range.

    100MHz
  • Grade

    In electronic components, the parameter "Grade" typically refers to the quality or performance level of the component. It is used to classify components based on their specifications, such as accuracy, tolerance, reliability, and operating conditions. Components with higher grades are usually more precise, reliable, and have tighter tolerances compared to lower grade components. Manufacturers often provide different grades of components to meet the varying requirements of different applications, allowing designers to choose the most suitable grade for their specific needs. It is important to consider the grade of electronic components when designing circuits to ensure optimal performance and reliability.

    Automotive
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Download datasheets and manufacturer documentation for Diotec Semiconductor BCP55-16-AQ.

BCP55-16-AQ Overview

As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 150mA, 2V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 50mA, 500mA.This product comes in a SOT-223 device package from the supplier.Device displays Collector Emitter Breakdown (80 V maximal voltage).

BCP55-16-AQ Features

the DC current gain for this device is 100 @ 150mA, 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the supplier device package of SOT-223

BCP55-16-AQ Applications

There are a lot of Diotec Semiconductor
BCP55-16-AQ applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting