Infineon Technologies BSZ520N15NS3GATMA1
Infineon Technologies BSZ520N15NS3GATMA1
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Infineon Technologies BSZ520N15NS3GATMA1

Manufacturer No:

BSZ520N15NS3GATMA1

Utmel No:

1211-BSZ520N15NS3GATMA1

Package:

8-PowerTDFN

Datasheet:

BSZ520N15NS3 G

ECAD Model:

Description:

N-Channel Tape & Reel (TR) 52m Ω @ 18A, 10V ±20V 890pF @ 75V 12nC @ 10V 8-PowerTDFN

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In Stock : 400

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BSZ520N15NS3GATMA1 information

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Infineon Technologies BSZ520N15NS3GATMA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies BSZ520N15NS3GATMA1.
  • Type
    Parameter
  • Factory Lead Time
    18 Weeks
  • Package / Case

    refers to the protective housing that encases an electronic component, providing mechanical support, electrical connections, and thermal management.

    8-PowerTDFN
  • Mounting Type

    The "Mounting Type" in electronic components refers to the method used to attach or connect a component to a circuit board or other substrate, such as through-hole, surface-mount, or panel mount.

    Surface Mount
  • Mount

    In electronic components, the term "Mount" typically refers to the method or process of physically attaching or fixing a component onto a circuit board or other electronic device. This can involve soldering, adhesive bonding, or other techniques to secure the component in place. The mounting process is crucial for ensuring proper electrical connections and mechanical stability within the electronic system. Different components may have specific mounting requirements based on their size, shape, and function, and manufacturers provide guidelines for proper mounting procedures to ensure optimal performance and reliability of the electronic device.

    Surface Mount
  • Number of Pins
    8
  • Transistor Element Material

    The "Transistor Element Material" parameter in electronic components refers to the material used to construct the transistor within the component. Transistors are semiconductor devices that amplify or switch electronic signals and are a fundamental building block in electronic circuits. The material used for the transistor element can significantly impact the performance and characteristics of the component. Common materials used for transistor elements include silicon, germanium, and gallium arsenide, each with its own unique properties and suitability for different applications. The choice of transistor element material is crucial in designing electronic components to meet specific performance requirements such as speed, power efficiency, and temperature tolerance.

    SILICON
  • Number of Elements
    1
  • Drive Voltage (Max Rds On, Min Rds On)
    8V 10V
  • Current - Continuous Drain (Id) @ 25℃
    21A Tc
  • Turn Off Delay Time

    It is the time from when Vgs drops below 90% of the gate drive voltage to when the drain current drops below 90% of the load current. It is the delay before current starts to transition in the load, and depends on Rg. Ciss.

    10 ns
  • Power Dissipation (Max)
    57W Tc
  • Operating Temperature

    The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

    -55°C~150°C TJ
  • Published
    2011
  • Series

    In electronic components, the "Series" refers to a group of products that share similar characteristics, designs, or functionalities, often produced by the same manufacturer. These components within a series typically have common specifications but may vary in terms of voltage, power, or packaging to meet different application needs. The series name helps identify and differentiate between various product lines within a manufacturer's catalog.

    OptiMOS™
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Tape & Reel (TR)
  • JESD-609 Code

    The "JESD-609 Code" in electronic components refers to a standardized marking code that indicates the lead-free solder composition and finish of electronic components for compliance with environmental regulations.

    e3
  • Pbfree Code

    The "Pbfree Code" parameter in electronic components refers to the code or marking used to indicate that the component is lead-free. Lead (Pb) is a toxic substance that has been widely used in electronic components for many years, but due to environmental concerns, there has been a shift towards lead-free alternatives. The Pbfree Code helps manufacturers and users easily identify components that do not contain lead, ensuring compliance with regulations and promoting environmentally friendly practices. It is important to pay attention to the Pbfree Code when selecting electronic components to ensure they meet the necessary requirements for lead-free applications.

    no
  • Part Status

    Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.

    Active
  • Moisture Sensitivity Level (MSL)

    Moisture Sensitivity Level (MSL) is a standardized rating that indicates the susceptibility of electronic components, particularly semiconductors, to moisture-induced damage during storage and the soldering process, defining the allowable exposure time to ambient conditions before they require special handling or baking to prevent failures

    1 (Unlimited)
  • Number of Terminations
    5
  • ECCN Code

    An ECCN (Export Control Classification Number) is an alphanumeric code used by the U.S. Bureau of Industry and Security to identify and categorize electronic components and other dual-use items that may require an export license based on their technical characteristics and potential for military use.

    EAR99
  • Terminal Finish

    Terminal Finish refers to the surface treatment applied to the terminals or leads of electronic components to enhance their performance and longevity. It can improve solderability, corrosion resistance, and overall reliability of the connection in electronic assemblies. Common finishes include nickel, gold, and tin, each possessing distinct properties suitable for various applications. The choice of terminal finish can significantly impact the durability and effectiveness of electronic devices.

    Matte Tin (Sn)
  • Terminal Position

    In electronic components, the term "Terminal Position" refers to the physical location of the connection points on the component where external electrical connections can be made. These connection points, known as terminals, are typically used to attach wires, leads, or other components to the main body of the electronic component. The terminal position is important for ensuring proper connectivity and functionality of the component within a circuit. It is often specified in technical datasheets or component specifications to help designers and engineers understand how to properly integrate the component into their circuit designs.

    DUAL
  • Pin Count

    a count of all of the component leads (or pins)

    8
  • JESD-30 Code

    JESD-30 Code refers to a standardized descriptive designation system established by JEDEC for semiconductor-device packages. This system provides a systematic method for generating designators that convey essential information about the package's physical characteristics, such as size and shape, which aids in component identification and selection. By using JESD-30 codes, manufacturers and engineers can ensure consistency and clarity in the specification of semiconductor packages across various applications and industries.

    S-PDSO-N5
  • Configuration

    The parameter "Configuration" in electronic components refers to the specific arrangement or setup of the components within a circuit or system. It encompasses how individual elements are interconnected and their physical layout. Configuration can affect the functionality, performance, and efficiency of the electronic system, and may influence factors such as signal flow, impedance, and power distribution. Understanding the configuration is essential for design, troubleshooting, and optimizing electronic devices.

    SINGLE WITH BUILT-IN DIODE
  • Operating Mode

    A phase of operation during the operation and maintenance stages of the life cycle of a facility.

    ENHANCEMENT MODE
  • Power Dissipation

    the process by which an electronic or electrical device produces heat (energy loss or waste) as an undesirable derivative of its primary action.

    57W
  • Case Connection

    Case Connection refers to the method by which an electronic component's case or housing is connected to the electrical circuit. This connection is important for grounding purposes, mechanical stability, and heat dissipation. The case connection can vary depending on the type of component and its intended application. It is crucial to ensure a secure and reliable case connection to maintain the overall performance and safety of the electronic device.

    DRAIN
  • Turn On Delay Time

    Turn-on delay, td(on), is the time taken to charge the input capacitance of the device before drain current conduction can start.

    7 ns
  • FET Type

    "FET Type" refers to the type of Field-Effect Transistor (FET) being used in an electronic component. FETs are three-terminal semiconductor devices that can be classified into different types based on their construction and operation. The main types of FETs include Metal-Oxide-Semiconductor FETs (MOSFETs), Junction FETs (JFETs), and Insulated-Gate Bipolar Transistors (IGBTs).Each type of FET has its own unique characteristics and applications. MOSFETs are commonly used in digital circuits due to their high input impedance and low power consumption. JFETs are often used in low-noise amplifiers and switching circuits. IGBTs combine the high input impedance of MOSFETs with the high current-carrying capability of bipolar transistors, making them suitable for high-power applications like motor control and power inverters.When selecting an electronic component, understanding the FET type is crucial as it determines the device's performance and suitability for a specific application. It is important to consider factors such as voltage ratings, current handling capabilities, switching speeds, and power dissipation when choosing the right FET type for a particular circuit design.

    N-Channel
  • Transistor Application

    In the context of electronic components, the parameter "Transistor Application" refers to the specific purpose or function for which a transistor is designed and used. Transistors are semiconductor devices that can amplify or switch electronic signals and are commonly used in various electronic circuits. The application of a transistor can vary widely depending on its design and characteristics, such as whether it is intended for audio amplification, digital logic, power control, or radio frequency applications. Understanding the transistor application is important for selecting the right type of transistor for a particular circuit or system to ensure optimal performance and functionality.

    SWITCHING
  • Rds On (Max) @ Id, Vgs

    Rds On (Max) @ Id, Vgs refers to the maximum on-resistance of a MOSFET or similar transistor when it is fully turned on or in the saturation region. It is specified at a given drain current (Id) and gate-source voltage (Vgs). This parameter indicates how much resistance the component will offer when conducting, impacting power loss and efficiency in a circuit. Lower Rds On values are preferred for better performance in switching applications.

    52m Ω @ 18A, 10V
  • Vgs(th) (Max) @ Id

    The parameter "Vgs(th) (Max) @ Id" in electronic components refers to the maximum gate-source threshold voltage at a specified drain current (Id). This parameter is commonly found in field-effect transistors (FETs) and is used to define the minimum voltage required at the gate terminal to turn on the transistor and allow current to flow from the drain to the source. The maximum value indicates the upper limit of this threshold voltage under specified operating conditions. It is an important parameter for determining the proper biasing and operating conditions of the FET in a circuit to ensure proper functionality and performance.

    4V @ 35μA
  • Halogen Free

    The term "Halogen Free" in electronic components refers to a specific characteristic of the materials used in the manufacturing of the component. Halogens are a group of elements that include fluorine, chlorine, bromine, iodine, and astatine. These elements are commonly used in flame retardants and other materials in electronics. However, the presence of halogens can pose environmental and health risks when the components are disposed of or recycled.Therefore, electronic components labeled as "Halogen Free" are manufactured without the use of halogenated materials. This designation indicates that the components do not contain any halogens, making them safer for the environment and human health. Halogen-free components are becoming increasingly popular in the electronics industry due to the growing awareness of environmental concerns and regulations regarding hazardous substances in electronic products.

    Halogen Free
  • Input Capacitance (Ciss) (Max) @ Vds

    The parameter "Input Capacitance (Ciss) (Max) @ Vds" in electronic components refers to the maximum input capacitance measured at a specific drain-source voltage (Vds). Input capacitance is a crucial parameter in field-effect transistors (FETs) and power MOSFETs, as it represents the total capacitance at the input terminal of the device. This capacitance affects the device's switching speed and overall performance, as it influences the time required for charging and discharging during operation. Manufacturers provide this parameter to help designers understand the device's input characteristics and make informed decisions when integrating it into a circuit.

    890pF @ 75V
  • Gate Charge (Qg) (Max) @ Vgs

    Gate Charge (Qg) (Max) @ Vgs refers to the maximum amount of charge that must be supplied to the gate of a MOSFET or similar device to fully turn it on, measured at a specific gate-source voltage (Vgs). This parameter is crucial for understanding the switching characteristics of the device, as it influences the speed at which the gate can charge and discharge. A higher gate charge value often implies slower switching speeds, which can impact the efficiency of high-frequency applications. This parameter is typically specified in nanocoulombs (nC) in the component's datasheet.

    12nC @ 10V
  • Rise Time

    In electronics, when describing a voltage or current step function, rise time is the time taken by a signal to change from a specified low value to a specified high value.

    5ns
  • Vgs (Max)

    Vgs (Max) refers to the maximum gate-source voltage that can be applied to a field-effect transistor (FET) without causing damage to the component. This parameter is crucial in determining the safe operating limits of the FET and helps prevent overvoltage conditions that could lead to device failure. Exceeding the specified Vgs (Max) rating can result in breakdown of the gate oxide layer, leading to permanent damage to the FET. Designers must ensure that the applied gate-source voltage does not exceed the maximum rating to ensure reliable and long-term operation of the electronic component.

    ±20V
  • Fall Time (Typ)

    Fall Time (Typ) is a parameter used to describe the time it takes for a signal to transition from a high level to a low level in an electronic component, such as a transistor or an integrated circuit. It is typically measured in nanoseconds or microseconds and is an important characteristic that affects the performance of the component in digital circuits. A shorter fall time indicates faster switching speeds and can result in improved overall circuit performance, such as reduced power consumption and increased data transmission rates. Designers often consider the fall time specification when selecting components for their circuits to ensure proper functionality and efficiency.

    3 ns
  • Continuous Drain Current (ID)

    Continuous Drain Current (ID) is a key parameter in electronic components, particularly in field-effect transistors (FETs) such as MOSFETs. It refers to the maximum current that can flow continuously through the drain terminal of the FET without causing damage to the component. This parameter is crucial for determining the power handling capability of the FET and is specified by the manufacturer in the component's datasheet. Designers must ensure that the actual operating current does not exceed the specified Continuous Drain Current to prevent overheating and potential failure of the component.

    21A
  • Gate to Source Voltage (Vgs)

    The Gate to Source Voltage (Vgs) is a crucial parameter in electronic components, particularly in field-effect transistors (FETs) such as MOSFETs. It refers to the voltage difference between the gate and source terminals of the FET. This voltage determines the conductivity of the FET and controls the flow of current through the device. By varying the Vgs, the FET can be switched on or off, allowing for precise control of electronic circuits. Understanding and properly managing the Vgs is essential for ensuring the reliable and efficient operation of FET-based circuits.

    20V
  • Max Dual Supply Voltage

    A Dual power supply is a regular direct current power supply. It can provide a positive as well as negative voltage. It ensures stable power supply to the device as well as it helps to prevent system damage.

    150V
  • Drain-source On Resistance-Max

    Drain-source On Resistance-Max, commonly referred to as RDS(on) max, is a specification for MOSFETs that indicates the maximum resistance between the drain and source terminals when the device is turned on. This parameter is critical for assessing the efficiency of a MOSFET in a circuit, as lower values result in reduced power loss and heat generation during operation. It is measured in ohms and is influenced by factors such as temperature and gate-to-source voltage. Understanding RDS(on) max is essential for optimizing performance in power management and switching applications.

    0.052Ohm
  • Avalanche Energy Rating (Eas)

    Avalanche Energy Rating (Eas) is a parameter that quantifies the energy handling capability of a semiconductor device, particularly during avalanche breakdown conditions. It indicates the maximum energy that the device can withstand without being damaged when it experiences an avalanche effect. This rating is crucial for applications where devices might be exposed to over-voltage or other conditions that could cause unintended breakdown, ensuring reliability and longevity in operation. The Eas value helps designers select appropriate components for circuits that may encounter transient events.

    60 mJ
  • RoHS Status

    RoHS means “Restriction of Certain Hazardous Substances” in the “Hazardous Substances Directive” in electrical and electronic equipment.

    ROHS3 Compliant
  • Radiation Hardening

    Radiation hardening is the process of making electronic components and circuits resistant to damage or malfunction caused by high levels of ionizing radiation, especially for environments in outer space (especially beyond the low Earth orbit), around nuclear reactors and particle accelerators, or during nuclear accidents or nuclear warfare.

    No
  • Lead Free

    Lead Free is a term used to describe electronic components that do not contain lead as part of their composition. Lead is a toxic material that can have harmful effects on human health and the environment, so the electronics industry has been moving towards lead-free components to reduce these risks. Lead-free components are typically made using alternative materials such as silver, copper, and tin. Manufacturers must comply with regulations such as the Restriction of Hazardous Substances (RoHS) directive to ensure that their products are lead-free and environmentally friendly.

    Contains Lead
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Product Description:

The BSZ520N15NS3GATMA1 is a high-performance N-channel enhancement mode power MOSFET from Infineon Technologies, designed for switching applications. This surface-mount device features a built-in diode and is packaged in an 8-PowerTDFN case with a matte tin (Sn) finish.

Features:

  • High Current Handling: The BSZ520N15NS3GATMA1 can handle continuous drain currents of up to 21A at a temperature of 25°C.
  • Low On-Resistance: The device has a maximum drain-source on-resistance of 0.052Ω, making it suitable for high-frequency switching applications.
  • High Avalanche Energy Rating: The device has an avalanche energy rating of 60mJ, ensuring reliable operation in harsh environments.
  • Fast Switching Times: The BSZ520N15NS3GATMA1 features a fall time of 3ns and a rise time of 5ns, allowing for fast switching and reduced switching losses.
  • Wide Operating Temperature Range: The device operates from -55°C to 150°C, making it suitable for use in a wide range of applications.

Applications:

  • Primary Applications: The BSZ520N15NS3GATMA1 is designed for use in switching applications such as DC-DC converters, motor drives, and power supplies.
  • Secondary Applications: The device can also be used in other applications such as LED drivers, solar inverters, and power factor correction circuits.

Alternative Parts:

  • BSZ520N15NS3GATMA1: This is the primary part number for the BSZ520N15NS3GATMA1.
  • BSZ520N15NS3GATMA2: This is an alternative part number for the BSZ520N15NS3GATMA1.

Embedded Modules:

  • DC-DC Converters: The BSZ520N15NS3GATMA1 is used in DC-DC converters to switch high currents and provide efficient power conversion.
  • Motor Drives: The device is used in motor drives to switch high currents and provide efficient motor control.
  • Power Supplies: The BSZ520N15NS3GATMA1 is used in power supplies to switch high currents and provide efficient power conversion.

FAQs:

Q: What is the maximum continuous drain current of the BSZ520N15NS3GATMA1? A: The maximum continuous drain current of the BSZ520N15NS3GATMA1 is 21A at a temperature of 25°C.

Q: What is the maximum drain-source on-resistance of the BSZ520N15NS3GATMA1? A: The maximum drain-source on-resistance of the BSZ520N15NS3GATMA1 is 0.052Ω.

Q: What is the avalanche energy rating of the BSZ520N15NS3GATMA1? A: The avalanche energy rating of the BSZ520N15NS3GATMA1 is 60mJ.

Q: What is the operating temperature range of the BSZ520N15NS3GATMA1? A: The operating temperature range of the BSZ520N15NS3GATMA1 is -55°C to 150°C.

Q: Is the BSZ520N15NS3GATMA1 ROHS compliant? A: Yes, the BSZ520N15NS3GATMA1 is ROHS3 compliant.

The three parts on the right have similar specifications to Infineon Technologies & BSZ520N15NS3GATMA1.
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