Nexperia USA Inc. MJD41CJ
Nexperia USA Inc. MJD41CJ
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Nexperia USA Inc. MJD41CJ

Manufacturer No:

MJD41CJ

Manufacturer:

Nexperia USA Inc.

Utmel No:

1729-MJD41CJ

Package:

TO-252-3, DPak (2 Leads + Tab), SC-63

ECAD Model:

Description:

MJD41CJ datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available at Utmel

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Unit Price: $0.597203

Ext Price: $0.60

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In Stock : 120000

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    $250.71

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MJD41CJ information

Specifications
Product Details
Nexperia USA Inc. MJD41CJ technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. MJD41CJ.
  • Type
    Parameter
  • Mounting Type

    The "Mounting Type" in electronic components refers to the method used to attach or connect a component to a circuit board or other substrate, such as through-hole, surface-mount, or panel mount.

    Surface Mount
  • Package / Case

    refers to the protective housing that encases an electronic component, providing mechanical support, electrical connections, and thermal management.

    TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package

    The parameter "Supplier Device Package" in electronic components refers to the physical packaging or housing of the component as provided by the supplier. It specifies the form factor, dimensions, and layout of the component, which are crucial for compatibility and integration into electronic circuits and systems. The supplier device package information typically includes details such as the package type (e.g., DIP, SOP, QFN), number of pins, pitch, and overall size, allowing engineers and designers to select the appropriate component for their specific application requirements. Understanding the supplier device package is essential for proper component selection, placement, and soldering during the manufacturing process to ensure optimal performance and reliability of the electronic system.

    DPAK
  • Mfr
    Nexperia USA Inc.
  • Product Status
    Active
  • Current-Collector (Ic) (Max)
    6 A
  • Number of Elements per Chip
    1
  • Package Type
    DPAK (TO-252)
  • Maximum Collector Emitter Voltage
    100 V
  • Maximum DC Collector Current
    6 A
  • Minimum DC Current Gain
    30
  • MSL
    -
  • Qualification
    -
  • Transistor Polarity
    NPN
  • Emitter- Base Voltage VEBO
    6 V
  • Pd - Power Dissipation
    15 W
  • Maximum Operating Temperature

    the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

    + 150 C
  • DC Collector/Base Gain hfe Min
    30 V at 0.3 mA, 4 V
  • Collector-Emitter Saturation Voltage
    1.5 V
  • Minimum Operating Temperature
    - 55 C
  • Factory Pack QuantityFactory Pack Quantity
    2500
  • Mounting Styles
    SMD/SMT
  • Gain Bandwidth Product fT
    3 MHz
  • Part # Aliases
    934662264118
  • Manufacturer
    Nexperia
  • Brand
    Nexperia
  • RoHS
    Details
  • Collector- Emitter Voltage VCEO Max
    100 V
  • Operating Temperature

    The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

    150°C (TJ)
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    MouseReel
  • Subcategory
    Transistors
  • Technology

    In the context of electronic components, the parameter "Technology" refers to the specific manufacturing process and materials used to create the component. This includes the design, construction, and materials used in the production of the component. The technology used can greatly impact the performance, efficiency, and reliability of the electronic component. Different technologies may be used for different types of components, such as integrated circuits, resistors, capacitors, and more. Understanding the technology behind electronic components is important for selecting the right components for a particular application and ensuring optimal performance.

    Si
  • Configuration

    The parameter "Configuration" in electronic components refers to the specific arrangement or setup of the components within a circuit or system. It encompasses how individual elements are interconnected and their physical layout. Configuration can affect the functionality, performance, and efficiency of the electronic system, and may influence factors such as signal flow, impedance, and power distribution. Understanding the configuration is essential for design, troubleshooting, and optimizing electronic devices.

    Single
  • Power Dissipation

    the process by which an electronic or electrical device produces heat (energy loss or waste) as an undesirable derivative of its primary action.

    15W
  • Power - Max

    Power - Max is a parameter that specifies the maximum amount of power that an electronic component can handle without being damaged. It is typically measured in watts and indicates the upper limit of power that can be safely supplied to the component. Exceeding the maximum power rating can lead to overheating, malfunction, or permanent damage to the component. It is important to consider the power-max rating when designing circuits or systems to ensure proper operation and longevity of the electronic components.

    1.6 W
  • Product Type

    a group of products which fulfill a similar need for a market segment or market as a whole.

    BJTs - Bipolar Transistors
  • Transistor Type

    Transistor type refers to the classification of transistors based on their operation and construction. The two primary types are bipolar junction transistors (BJTs) and field-effect transistors (FETs). BJTs use current to control the flow of current, while FETs utilize voltage to control current flow. Each type has its own subtypes, such as NPN and PNP for BJTs, and MOSFETs and JFETs for FETs, impacting their applications and characteristics in electronic circuits.

    NPN
  • DC Current Gain (hFE) (Min) @ Ic, Vce

    The parameter "DC Current Gain (hFE) (Min) @ Ic, Vce" in electronic components refers to the minimum value of the DC current gain, denoted as hFE, under specific operating conditions of collector current (Ic) and collector-emitter voltage (Vce). The DC current gain hFE represents the ratio of the collector current to the base current in a bipolar junction transistor (BJT), indicating the amplification capability of the transistor. The minimum hFE value at a given Ic and Vce helps determine the transistor's performance and efficiency in amplifying signals within a circuit. Designers use this parameter to ensure proper transistor selection and performance in various electronic applications.

    30 @ 300μA, 4V
  • Current - Collector Cutoff (Max)

    The parameter "Current - Collector Cutoff (Max)" refers to the maximum current at which a transistor or other electronic component will cease to conduct current between the collector and emitter terminals. This parameter is important in determining the maximum current that can flow through the component when it is in the cutoff state. Exceeding this maximum cutoff current can lead to malfunction or damage of the component. It is typically specified in the component's datasheet and is crucial for proper circuit design and operation.

    1μA
  • Vce Saturation (Max) @ Ib, Ic

    The parameter "Vce Saturation (Max) @ Ib, Ic" in electronic components refers to the maximum voltage drop across the collector-emitter junction when the transistor is in saturation mode. This parameter is specified at a certain base current (Ib) and collector current (Ic) levels. It indicates the minimum voltage required to keep the transistor fully conducting in saturation mode, ensuring that the transistor operates efficiently and does not enter the cutoff region. Designers use this parameter to ensure proper transistor operation and to prevent overheating or damage to the component.

    1.5V @ 600mA, 6A
  • Voltage - Collector Emitter Breakdown (Max)

    Voltage - Collector Emitter Breakdown (Max) is a parameter that specifies the maximum voltage that can be applied between the collector and emitter terminals of a transistor or other semiconductor device before it breaks down and allows excessive current to flow. This parameter is crucial for ensuring the safe and reliable operation of the component within its specified limits. Exceeding the maximum breakdown voltage can lead to permanent damage or failure of the device. Designers and engineers must carefully consider this parameter when selecting components for their circuits to prevent potential issues and ensure proper functionality.

    100 V
  • Transition Frequency

    Transition Frequency in electronic components refers to the frequency at which a device can transition from one state to another, typically defining the upper limit of its operating frequency. It is a critical parameter in determining the speed and performance of active components like transistors and integrated circuits. This frequency is influenced by factors such as capacitance, resistance, and the inherent characteristics of the materials used in the component's construction. Understanding transition frequency is essential for optimizing circuit designs and ensuring reliable signal processing in various applications.

    3MHz
  • Frequency - Transition

    The parameter "Frequency - Transition" in electronic components refers to the maximum frequency at which a signal transition can occur within the component. It is a crucial specification for digital circuits as it determines the speed at which data can be processed and transmitted. A higher frequency transition allows for faster operation and better performance of the electronic component. It is typically measured in hertz (Hz) or megahertz (MHz) and is specified by the manufacturer to ensure proper functioning of the component within a given frequency range.

    3MHz
  • Collector Base Voltage (VCBO)

    Collector Base Voltage (VCBO) is the maximum allowable voltage that can be applied between the collector and base terminals of a bipolar junction transistor when the emitter is open. It is a critical parameter that determines the voltage rating of the transistor and helps prevent breakdown in the collector-base junction. Exceeding this voltage can lead to permanent damage or failure of the component.

    -
  • Continuous Collector Current

    Continuous Collector Current is the maximum amount of current that a transistor can continuously carry through its collector terminal without overheating or being damaged. This parameter is crucial for designing circuits as it determines the suitability of a transistor for specific applications. Exceeding this value can lead to reduced performance or failure of the component. It is typically specified in amperes (A) and varies based on the transistor's construction and cooling conditions.

    6A
  • Product Category

    a particular group of related products.

    Bipolar Transistors - BJT
0 Similar Products Remaining

MJD41CJ Overview

In this device, the DC current gain is 30 @ 300μA, 4V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.5V @ 600mA, 6A.Maintaining the continuous collector voltage at 6A is essential for high efficiency.3MHz is present in the transition frequency.Supplier device package DPAK comes with the product.The device exhibits a collector-emitter breakdown at 100 V.

MJD41CJ Features

the DC current gain for this device is 30 @ 300μA, 4V
the vce saturation(Max) is 1.5V @ 600mA, 6A
a transition frequency of 3MHz
the supplier device package of DPAK

MJD41CJ Applications

There are a lot of Nexperia USA Inc.
MJD41CJ applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
MJD41CJ Relevant information

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