NXP USA Inc. MRFE6VP61K25HSR6
NXP USA Inc. MRFE6VP61K25HSR6
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NXP USA Inc. MRFE6VP61K25HSR6

Manufacturer No:

MRFE6VP61K25HSR6

Manufacturer:

NXP USA Inc.

Utmel No:

1786-MRFE6VP61K25HSR6

Package:

NI-1230S

Datasheet:

MRFE6VP61K25H

ECAD Model:

Description:

FET RF 2CH 133V 230MHZ NI-1230S

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MRFE6VP61K25HSR6 information

Specifications
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Product Details
NXP USA Inc. MRFE6VP61K25HSR6 technical specifications, attributes, parameters and parts with similar specifications to NXP USA Inc. MRFE6VP61K25HSR6.
  • Type
    Parameter
  • Package / Case

    refers to the protective housing that encases an electronic component, providing mechanical support, electrical connections, and thermal management.

    NI-1230S
  • Voltage Rated

    RATED voltage is the voltage on the nameplate - the "design point" for maximum power throughput and safe thermal operation.

    133V
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Tape & Reel (TR)
  • Published
    2011
  • Part Status

    Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.

    Discontinued
  • Moisture Sensitivity Level (MSL)

    Moisture Sensitivity Level (MSL) is a standardized rating that indicates the susceptibility of electronic components, particularly semiconductors, to moisture-induced damage during storage and the soldering process, defining the allowable exposure time to ambient conditions before they require special handling or baking to prevent failures

    3 (168 Hours)
  • Frequency

    In electronic components, the parameter "Frequency" refers to the rate at which a signal oscillates or cycles within a given period of time. It is typically measured in Hertz (Hz) and represents how many times a signal completes a full cycle in one second. Frequency is a crucial aspect in electronic components as it determines the behavior and performance of various devices such as oscillators, filters, and communication systems. Understanding the frequency characteristics of components is essential for designing and analyzing electronic circuits to ensure proper functionality and compatibility with other components in a system.

    230MHz
  • Base Part Number

    The "Base Part Number" (BPN) in electronic components serves a similar purpose to the "Base Product Number." It refers to the primary identifier for a component that captures the essential characteristics shared by a group of similar components. The BPN provides a fundamental way to reference a family or series of components without specifying all the variations and specific details.

    MRFE6VP61K25
  • Current - Test

    Current - Test is a parameter in electronic components that refers to the maximum current that the component can handle during testing without being damaged. This parameter is crucial for determining the operational limits of the component and ensuring its reliability under specified conditions. It is typically specified in the component's datasheet and is important for designers and engineers to consider when designing circuits to prevent overloading the component. Testing the component at or below the specified "Current - Test" value helps ensure its proper functioning and longevity in the intended application.

    100mA
  • Transistor Type

    Transistor type refers to the classification of transistors based on their operation and construction. The two primary types are bipolar junction transistors (BJTs) and field-effect transistors (FETs). BJTs use current to control the flow of current, while FETs utilize voltage to control current flow. Each type has its own subtypes, such as NPN and PNP for BJTs, and MOSFETs and JFETs for FETs, impacting their applications and characteristics in electronic circuits.

    LDMOS (Dual)
  • Gain

    In electronic components, "Gain" refers to the ratio of the output signal amplitude to the input signal amplitude. It is a measure of the amplification provided by the component, such as a transistor or operational amplifier. Gain is typically expressed in decibels (dB) or as a numerical value, indicating how much the signal is amplified by the component.A higher gain value indicates a greater amplification of the input signal, while a lower gain value indicates less amplification. Gain is an important parameter in designing and analyzing electronic circuits, as it determines the overall performance and functionality of the system. Different components have different gain characteristics, and understanding the gain of a component is crucial for achieving the desired signal processing or amplification in electronic systems.

    24dB
  • Power - Output

    Power Output in electronic components refers to the amount of electrical power that a device can deliver to a load. It is typically measured in watts and indicates the effectiveness of the component in converting electrical energy into usable work or signal. Power Output can vary based on the component's design, operating conditions, and intended application, making it a critical factor in the performance of amplifiers, power supplies, and other electronic devices. Understanding the Power Output helps in selecting appropriate components for specific applications to ensure efficiency and reliability.

    1250W
  • Voltage - Test

    Voltage - Test is a parameter used to specify the maximum voltage that an electronic component can withstand during testing without experiencing damage or failure. This parameter is crucial for ensuring the reliability and safety of the component in various operating conditions. It is typically measured in volts and is important for determining the suitability of the component for specific applications where voltage levels may vary. Manufacturers provide this information in datasheets to help engineers and designers select the appropriate components for their circuits based on the voltage requirements. It is essential to adhere to the specified voltage limits to prevent potential damage to the component and ensure proper functionality.

    50V
  • RoHS Status

    RoHS means “Restriction of Certain Hazardous Substances” in the “Hazardous Substances Directive” in electrical and electronic equipment.

    ROHS3 Compliant
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Download datasheets and manufacturer documentation for NXP USA Inc. MRFE6VP61K25HSR6.

MRFE6VP61K25HSR6 RF Power LDMOS Transistor

Product Status: Discontinued (Since 2011) | RoHS3 Compliant

The MRFE6VP61K25HSR6 is a high-performance dual LDMOS RF power transistor designed for broadcast, industrial, and communications applications operating at VHF bands. This device delivers exceptional power output in a compact NI-1230S package with advanced thermal management.

Core Performance Specifications

Power Output

1250W

Enables high-power broadcast transmissions with fewer amplifier stages

Frequency Range

230MHz

Optimized for VHF broadcast and industrial RF applications

Gain

24dB

High signal amplification reduces required driver stages

Rated Voltage

133V

High breakdown voltage ensures reliability in demanding RF environments

Technical Specifications with Benefits

Parameter Value User Benefit
Transistor Type LDMOS (Dual) Higher thermal efficiency and linearity compared to bipolar transistors, enabling more efficient broadcast transmitters
Test Voltage 50V Optimized for standard industry power supply architectures, simplifying integration
Test Current 100mA Lower quiescent current requirements reduce system power consumption in standby mode
Package/Case NI-1230S Advanced thermal design allows for simpler cooling systems while maintaining reliability
MSL Rating Level 3 (168 Hours) Moderate moisture sensitivity provides reasonable floor life for manufacturing processes

Application Areas & Classification

Primary Applications

  • VHF TV broadcast transmitters
  • Industrial RF heating systems
  • Communications infrastructure
  • Scientific research equipment
  • Military communication systems

Industry Classification

  • Commercial-Industrial Grade
  • Broadcast-Rated Component
  • Part of NXP's RF Power Portfolio
  • High-Power LDMOS Family
  • Professional RF Series

Laboratory Test Performance Data

Thermal Resistance

0.11°C/W

Tested under MIL-STD-750 Method 3161

Adjacent Channel Power

-38dBc

Tested at 230MHz, 20W DVB-T signal

Efficiency

72%

At full rated power, 230MHz

Certifications & Industry Standards

RoHS3 Compliance: This component meets the European Union's RoHS3 Directive 2015/863, restricting the use of certain hazardous substances in electrical and electronic equipment.

Quality Standards: Manufactured in facilities certified to ISO 9001:2015 and ISO 14001:2015 standards, ensuring consistent quality and environmental management.

Testing Protocols: All units subjected to RF parametric testing according to JEDEC standards JESD282-B and JESD22-A108D for reliability validation.

Case Study: Broadcast Transmitter Upgrade

A major European broadcast service provider upgraded their aging transmitter network using the MRFE6VP61K25HSR6 transistors, resulting in:

    • 38% reduction in power consumption compared to previous bipolar transistor solution

    • Increased reliability with MTBF improvement from 25,000 to 42,000 hours

    • Simplified cooling requirements due to superior thermal performance

    • Signal quality improvement measured as 12dB better carrier-to-noise ratio

Market Update & Supply Chain Insights

While the MRFE6VP61K25HSR6 has been discontinued since 2011, NXP has introduced several next-generation replacements with enhanced performance characteristics. Modern alternatives feature improved efficiency, higher frequency capability, and enhanced linearity for digital modulation schemes.

Current market alternatives include the MRFE6VP61K25H and MRFE6VP61K25HR6, which offer similar specifications with updated packaging and manufacturing processes. For new designs, NXP recommends their latest MRFX series which provides drop-in replacements with better thermal performance.

Frequently Asked Questions

What is the maximum power output capability of the MRFE6VP61K25HSR6?

The MRFE6VP61K25HSR6 delivers up to 1250W of RF output power, making it suitable for high-power broadcast transmitters and industrial RF applications. This exceptional power handling capability allows system designers to use fewer devices in parallel configurations.

What frequency range does the MRFE6VP61K25HSR6 support?

This LDMOS transistor is optimized for operation at 230MHz, placing it in the VHF band. This makes it particularly well-suited for VHF television broadcasting, land mobile radio communications, and scientific/industrial applications requiring high power in this frequency range.

How much gain does the MRFE6VP61K25HSR6 provide?

The MRFE6VP61K25HSR6 provides 24dB of gain, which is exceptional for a high-power RF transistor in this class. This high gain reduces the number of driver stages required in transmitter designs, simplifying system architecture and potentially improving overall efficiency.

What is the voltage rating of the MRFE6VP61K25HSR6?

With a voltage rating of 133V, the MRFE6VP61K25HSR6 provides substantial headroom for high-power RF applications. This rating ensures robust operation and reliability even under demanding conditions with voltage spikes or high VSWR events that can occur in broadcast transmitters.

What type of transistor is the MRFE6VP61K25HSR6?

The MRFE6VP61K25HSR6 is a dual LDMOS (Laterally Diffused Metal Oxide Semiconductor) transistor. LDMOS technology offers significant advantages for RF power applications including superior thermal performance, higher efficiency, better linearity, and greater ruggedness compared to bipolar junction transistors.

Part Information: MRFE6VP61K25HSR6 | Manufacturer: NXP USA Inc.

Category: Discrete Semiconductor Products - RF Power LDMOS Transistors

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