

Renesas RJK0222DNS-00#J5
Manufacturer No:
RJK0222DNS-00#J5
Tiny WHSLManufacturer:
Utmel No:
2038-RJK0222DNS-00#J5
Package:
8-WDFN Exposed Pad
Description:
2 N-Channel (Half Bridge) 9.2mOhm @ 7A, 10V 810pF @ 10V 6.2nC @ 4.5V 25V 8-WDFN Exposed Pad
Quantity:
Unit Price: $1.416079
Ext Price: $1.42
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Payment:











In Stock : 14774
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$1.416079
$1.42
10
$1.335923
$13.36
100
$1.260305
$126.03
500
$1.188967
$594.48
1000
$1.121667
$1,121.67
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- TypeParameter
- Mounting Type
The "Mounting Type" in electronic components refers to the method used to attach or connect a component to a circuit board or other substrate, such as through-hole, surface-mount, or panel mount.
Surface Mount - Package / Case
refers to the protective housing that encases an electronic component, providing mechanical support, electrical connections, and thermal management.
8-WDFN Exposed Pad - Supplier Device Package
The parameter "Supplier Device Package" in electronic components refers to the physical packaging or housing of the component as provided by the supplier. It specifies the form factor, dimensions, and layout of the component, which are crucial for compatibility and integration into electronic circuits and systems. The supplier device package information typically includes details such as the package type (e.g., DIP, SOP, QFN), number of pins, pitch, and overall size, allowing engineers and designers to select the appropriate component for their specific application requirements. Understanding the supplier device package is essential for proper component selection, placement, and soldering during the manufacturing process to ensure optimal performance and reliability of the electronic system.
8-DFN (5x6) - PackageBulk
- Current - Continuous Drain (Id) @ 25℃14A, 16A
- MfrRenesas Electronics America Inc
- Product StatusActive
- Operating Temperature
The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.
150°C (TJ) - Series
In electronic components, the "Series" refers to a group of products that share similar characteristics, designs, or functionalities, often produced by the same manufacturer. These components within a series typically have common specifications but may vary in terms of voltage, power, or packaging to meet different application needs. The series name helps identify and differentiate between various product lines within a manufacturer's catalog.
- - Power - Max
Power - Max is a parameter that specifies the maximum amount of power that an electronic component can handle without being damaged. It is typically measured in watts and indicates the upper limit of power that can be safely supplied to the component. Exceeding the maximum power rating can lead to overheating, malfunction, or permanent damage to the component. It is important to consider the power-max rating when designing circuits or systems to ensure proper operation and longevity of the electronic components.
8W, 10W - FET Type
"FET Type" refers to the type of Field-Effect Transistor (FET) being used in an electronic component. FETs are three-terminal semiconductor devices that can be classified into different types based on their construction and operation. The main types of FETs include Metal-Oxide-Semiconductor FETs (MOSFETs), Junction FETs (JFETs), and Insulated-Gate Bipolar Transistors (IGBTs).Each type of FET has its own unique characteristics and applications. MOSFETs are commonly used in digital circuits due to their high input impedance and low power consumption. JFETs are often used in low-noise amplifiers and switching circuits. IGBTs combine the high input impedance of MOSFETs with the high current-carrying capability of bipolar transistors, making them suitable for high-power applications like motor control and power inverters.When selecting an electronic component, understanding the FET type is crucial as it determines the device's performance and suitability for a specific application. It is important to consider factors such as voltage ratings, current handling capabilities, switching speeds, and power dissipation when choosing the right FET type for a particular circuit design.
2 N-Channel (Half Bridge) - Rds On (Max) @ Id, Vgs
Rds On (Max) @ Id, Vgs refers to the maximum on-resistance of a MOSFET or similar transistor when it is fully turned on or in the saturation region. It is specified at a given drain current (Id) and gate-source voltage (Vgs). This parameter indicates how much resistance the component will offer when conducting, impacting power loss and efficiency in a circuit. Lower Rds On values are preferred for better performance in switching applications.
9.2mOhm @ 7A, 10V - Vgs(th) (Max) @ Id
The parameter "Vgs(th) (Max) @ Id" in electronic components refers to the maximum gate-source threshold voltage at a specified drain current (Id). This parameter is commonly found in field-effect transistors (FETs) and is used to define the minimum voltage required at the gate terminal to turn on the transistor and allow current to flow from the drain to the source. The maximum value indicates the upper limit of this threshold voltage under specified operating conditions. It is an important parameter for determining the proper biasing and operating conditions of the FET in a circuit to ensure proper functionality and performance.
- - Input Capacitance (Ciss) (Max) @ Vds
The parameter "Input Capacitance (Ciss) (Max) @ Vds" in electronic components refers to the maximum input capacitance measured at a specific drain-source voltage (Vds). Input capacitance is a crucial parameter in field-effect transistors (FETs) and power MOSFETs, as it represents the total capacitance at the input terminal of the device. This capacitance affects the device's switching speed and overall performance, as it influences the time required for charging and discharging during operation. Manufacturers provide this parameter to help designers understand the device's input characteristics and make informed decisions when integrating it into a circuit.
810pF @ 10V - Gate Charge (Qg) (Max) @ Vgs
Gate Charge (Qg) (Max) @ Vgs refers to the maximum amount of charge that must be supplied to the gate of a MOSFET or similar device to fully turn it on, measured at a specific gate-source voltage (Vgs). This parameter is crucial for understanding the switching characteristics of the device, as it influences the speed at which the gate can charge and discharge. A higher gate charge value often implies slower switching speeds, which can impact the efficiency of high-frequency applications. This parameter is typically specified in nanocoulombs (nC) in the component's datasheet.
6.2nC @ 4.5V - Drain to Source Voltage (Vdss)
The Drain to Source Voltage (Vdss) is a key parameter in electronic components, particularly in field-effect transistors (FETs) such as MOSFETs. It refers to the maximum voltage that can be applied between the drain and source terminals of the FET without causing damage to the component. Exceeding this voltage limit can lead to breakdown and potentially permanent damage to the device.Vdss is an important specification to consider when designing or selecting components for a circuit, as it determines the operating range and reliability of the FET. It is crucial to ensure that the Vdss rating of the component is higher than the maximum voltage expected in the circuit to prevent failures and ensure proper functionality.In summary, the Drain to Source Voltage (Vdss) is a critical parameter that defines the maximum voltage tolerance of a FET component and plays a significant role in determining the overall performance and reliability of electronic circuits.
25V - Channel Type
In electronic components, the parameter "Channel Type" refers to the type of channel through which electrical signals or current flow within the component. This parameter is commonly associated with field-effect transistors (FETs) and other semiconductor devices. The channel type can be categorized as either N-channel or P-channel, depending on the polarity of the majority charge carriers (electrons or holes) that carry the current within the channel. N-channel devices have an electron-conducting channel, while P-channel devices have a hole-conducting channel. Understanding the channel type is crucial for proper circuit design and component selection to ensure compatibility and optimal performance.
Dual N - FET Feature
FET Feature refers to the specific characteristics or attributes of a Field-Effect Transistor (FET) that distinguish it from other types of transistors. FETs are semiconductor devices commonly used in electronic circuits for amplification or switching purposes. Some common features of FETs include high input impedance, low output impedance, and voltage-controlled operation. These features make FETs suitable for various applications where precise control of current and voltage is required. Understanding the FET features is essential for selecting the right transistor for a particular circuit design and ensuring optimal performance.
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