STMicroelectronics STB21NM50N-1
STMicroelectronics STB21NM50N-1
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STMicroelectronics STB21NM50N-1

Manufacturer No:

STB21NM50N-1

Manufacturer:

STMicroelectronics

Utmel No:

2381-STB21NM50N-1

Package:

TO-262-3 Long Leads, I2Pak, TO-262AA

Datasheet:

STx21NM50N(-1)

ECAD Model:

Description:

N-Channel Tube 190m Ω @ 9A, 10V ±25V 1950pF @ 25V 65nC @ 10V TO-262-3 Long Leads, I2Pak, TO-262AA

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In Stock : 15000

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STB21NM50N-1 information

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STMicroelectronics STB21NM50N-1 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STB21NM50N-1.
  • Type
    Parameter
  • Mount

    In electronic components, the term "Mount" typically refers to the method or process of physically attaching or fixing a component onto a circuit board or other electronic device. This can involve soldering, adhesive bonding, or other techniques to secure the component in place. The mounting process is crucial for ensuring proper electrical connections and mechanical stability within the electronic system. Different components may have specific mounting requirements based on their size, shape, and function, and manufacturers provide guidelines for proper mounting procedures to ensure optimal performance and reliability of the electronic device.

    Through Hole
  • Mounting Type

    The "Mounting Type" in electronic components refers to the method used to attach or connect a component to a circuit board or other substrate, such as through-hole, surface-mount, or panel mount.

    Through Hole
  • Package / Case

    refers to the protective housing that encases an electronic component, providing mechanical support, electrical connections, and thermal management.

    TO-262-3 Long Leads, I2Pak, TO-262AA
  • Number of Pins
    3
  • Transistor Element Material

    The "Transistor Element Material" parameter in electronic components refers to the material used to construct the transistor within the component. Transistors are semiconductor devices that amplify or switch electronic signals and are a fundamental building block in electronic circuits. The material used for the transistor element can significantly impact the performance and characteristics of the component. Common materials used for transistor elements include silicon, germanium, and gallium arsenide, each with its own unique properties and suitability for different applications. The choice of transistor element material is crucial in designing electronic components to meet specific performance requirements such as speed, power efficiency, and temperature tolerance.

    SILICON
  • Current - Continuous Drain (Id) @ 25℃
    18A Tc
  • Drive Voltage (Max Rds On, Min Rds On)
    10V
  • Number of Elements
    1
  • Power Dissipation (Max)
    140W Tc
  • Turn Off Delay Time

    It is the time from when Vgs drops below 90% of the gate drive voltage to when the drain current drops below 90% of the load current. It is the delay before current starts to transition in the load, and depends on Rg. Ciss.

    90 ns
  • Operating Temperature

    The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

    150°C TJ
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Tube
  • Series

    In electronic components, the "Series" refers to a group of products that share similar characteristics, designs, or functionalities, often produced by the same manufacturer. These components within a series typically have common specifications but may vary in terms of voltage, power, or packaging to meet different application needs. The series name helps identify and differentiate between various product lines within a manufacturer's catalog.

    MDmesh™ II
  • JESD-609 Code

    The "JESD-609 Code" in electronic components refers to a standardized marking code that indicates the lead-free solder composition and finish of electronic components for compliance with environmental regulations.

    e3
  • Part Status

    Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.

    Obsolete
  • Moisture Sensitivity Level (MSL)

    Moisture Sensitivity Level (MSL) is a standardized rating that indicates the susceptibility of electronic components, particularly semiconductors, to moisture-induced damage during storage and the soldering process, defining the allowable exposure time to ambient conditions before they require special handling or baking to prevent failures

    1 (Unlimited)
  • Number of Terminations
    3
  • Resistance

    Resistance is a fundamental property of electronic components that measures their opposition to the flow of electric current. It is denoted by the symbol "R" and is measured in ohms (Ω). Resistance is caused by the collisions of electrons with atoms in a material, which generates heat and reduces the flow of current. Components with higher resistance will impede the flow of current more than those with lower resistance. Resistance plays a crucial role in determining the behavior and functionality of electronic circuits, such as limiting current flow, voltage division, and controlling power dissipation.

    190mOhm
  • Terminal Finish

    Terminal Finish refers to the surface treatment applied to the terminals or leads of electronic components to enhance their performance and longevity. It can improve solderability, corrosion resistance, and overall reliability of the connection in electronic assemblies. Common finishes include nickel, gold, and tin, each possessing distinct properties suitable for various applications. The choice of terminal finish can significantly impact the durability and effectiveness of electronic devices.

    TIN
  • Voltage - Rated DC

    Voltage - Rated DC is a parameter that specifies the maximum direct current (DC) voltage that an electronic component can safely handle without being damaged. This rating is crucial for ensuring the proper functioning and longevity of the component in a circuit. Exceeding the rated DC voltage can lead to overheating, breakdown, or even permanent damage to the component. It is important to carefully consider this parameter when designing or selecting components for a circuit to prevent any potential issues related to voltage overload.

    500V
  • Peak Reflow Temperature (Cel)

    Peak Reflow Temperature (Cel) is a parameter that specifies the maximum temperature at which an electronic component can be exposed during the reflow soldering process. Reflow soldering is a common method used to attach electronic components to a circuit board. The Peak Reflow Temperature is crucial because it ensures that the component is not damaged or degraded during the soldering process. Exceeding the specified Peak Reflow Temperature can lead to issues such as component failure, reduced performance, or even permanent damage to the component. It is important for manufacturers and assemblers to adhere to the recommended Peak Reflow Temperature to ensure the reliability and functionality of the electronic components.

    NOT SPECIFIED
  • Reach Compliance Code

    Reach Compliance Code refers to a designation indicating that electronic components meet the requirements set by the Registration, Evaluation, Authorization, and Restriction of Chemicals (REACH) regulation in the European Union. It signifies that the manufacturer has assessed and managed the chemical substances within the components to ensure safety and environmental protection. This code is vital for compliance with regulations aimed at minimizing risks associated with hazardous substances in electronic products.

    unknown
  • Current Rating

    Current rating is the maximum current that a fuse will carry for an indefinite period without too much deterioration of the fuse element.

    18A
  • Time@Peak Reflow Temperature-Max (s)

    Time@Peak Reflow Temperature-Max (s) refers to the maximum duration that an electronic component can be exposed to the peak reflow temperature during the soldering process, which is crucial for ensuring reliable solder joint formation without damaging the component.

    NOT SPECIFIED
  • Pin Count

    a count of all of the component leads (or pins)

    3
  • Qualification Status

    An indicator of formal certification of qualifications.

    Not Qualified
  • Element Configuration

    The distribution of electrons of an atom or molecule (or other physical structure) in atomic or molecular orbitals.

    Single
  • Operating Mode

    A phase of operation during the operation and maintenance stages of the life cycle of a facility.

    ENHANCEMENT MODE
  • Power Dissipation

    the process by which an electronic or electrical device produces heat (energy loss or waste) as an undesirable derivative of its primary action.

    140W
  • FET Type

    "FET Type" refers to the type of Field-Effect Transistor (FET) being used in an electronic component. FETs are three-terminal semiconductor devices that can be classified into different types based on their construction and operation. The main types of FETs include Metal-Oxide-Semiconductor FETs (MOSFETs), Junction FETs (JFETs), and Insulated-Gate Bipolar Transistors (IGBTs).Each type of FET has its own unique characteristics and applications. MOSFETs are commonly used in digital circuits due to their high input impedance and low power consumption. JFETs are often used in low-noise amplifiers and switching circuits. IGBTs combine the high input impedance of MOSFETs with the high current-carrying capability of bipolar transistors, making them suitable for high-power applications like motor control and power inverters.When selecting an electronic component, understanding the FET type is crucial as it determines the device's performance and suitability for a specific application. It is important to consider factors such as voltage ratings, current handling capabilities, switching speeds, and power dissipation when choosing the right FET type for a particular circuit design.

    N-Channel
  • Transistor Application

    In the context of electronic components, the parameter "Transistor Application" refers to the specific purpose or function for which a transistor is designed and used. Transistors are semiconductor devices that can amplify or switch electronic signals and are commonly used in various electronic circuits. The application of a transistor can vary widely depending on its design and characteristics, such as whether it is intended for audio amplification, digital logic, power control, or radio frequency applications. Understanding the transistor application is important for selecting the right type of transistor for a particular circuit or system to ensure optimal performance and functionality.

    SWITCHING
  • Rds On (Max) @ Id, Vgs

    Rds On (Max) @ Id, Vgs refers to the maximum on-resistance of a MOSFET or similar transistor when it is fully turned on or in the saturation region. It is specified at a given drain current (Id) and gate-source voltage (Vgs). This parameter indicates how much resistance the component will offer when conducting, impacting power loss and efficiency in a circuit. Lower Rds On values are preferred for better performance in switching applications.

    190m Ω @ 9A, 10V
  • Vgs(th) (Max) @ Id

    The parameter "Vgs(th) (Max) @ Id" in electronic components refers to the maximum gate-source threshold voltage at a specified drain current (Id). This parameter is commonly found in field-effect transistors (FETs) and is used to define the minimum voltage required at the gate terminal to turn on the transistor and allow current to flow from the drain to the source. The maximum value indicates the upper limit of this threshold voltage under specified operating conditions. It is an important parameter for determining the proper biasing and operating conditions of the FET in a circuit to ensure proper functionality and performance.

    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds

    The parameter "Input Capacitance (Ciss) (Max) @ Vds" in electronic components refers to the maximum input capacitance measured at a specific drain-source voltage (Vds). Input capacitance is a crucial parameter in field-effect transistors (FETs) and power MOSFETs, as it represents the total capacitance at the input terminal of the device. This capacitance affects the device's switching speed and overall performance, as it influences the time required for charging and discharging during operation. Manufacturers provide this parameter to help designers understand the device's input characteristics and make informed decisions when integrating it into a circuit.

    1950pF @ 25V
  • Gate Charge (Qg) (Max) @ Vgs

    Gate Charge (Qg) (Max) @ Vgs refers to the maximum amount of charge that must be supplied to the gate of a MOSFET or similar device to fully turn it on, measured at a specific gate-source voltage (Vgs). This parameter is crucial for understanding the switching characteristics of the device, as it influences the speed at which the gate can charge and discharge. A higher gate charge value often implies slower switching speeds, which can impact the efficiency of high-frequency applications. This parameter is typically specified in nanocoulombs (nC) in the component's datasheet.

    65nC @ 10V
  • Rise Time

    In electronics, when describing a voltage or current step function, rise time is the time taken by a signal to change from a specified low value to a specified high value.

    18ns
  • Vgs (Max)

    Vgs (Max) refers to the maximum gate-source voltage that can be applied to a field-effect transistor (FET) without causing damage to the component. This parameter is crucial in determining the safe operating limits of the FET and helps prevent overvoltage conditions that could lead to device failure. Exceeding the specified Vgs (Max) rating can result in breakdown of the gate oxide layer, leading to permanent damage to the FET. Designers must ensure that the applied gate-source voltage does not exceed the maximum rating to ensure reliable and long-term operation of the electronic component.

    ±25V
  • Fall Time (Typ)

    Fall Time (Typ) is a parameter used to describe the time it takes for a signal to transition from a high level to a low level in an electronic component, such as a transistor or an integrated circuit. It is typically measured in nanoseconds or microseconds and is an important characteristic that affects the performance of the component in digital circuits. A shorter fall time indicates faster switching speeds and can result in improved overall circuit performance, such as reduced power consumption and increased data transmission rates. Designers often consider the fall time specification when selecting components for their circuits to ensure proper functionality and efficiency.

    30 ns
  • Continuous Drain Current (ID)

    Continuous Drain Current (ID) is a key parameter in electronic components, particularly in field-effect transistors (FETs) such as MOSFETs. It refers to the maximum current that can flow continuously through the drain terminal of the FET without causing damage to the component. This parameter is crucial for determining the power handling capability of the FET and is specified by the manufacturer in the component's datasheet. Designers must ensure that the actual operating current does not exceed the specified Continuous Drain Current to prevent overheating and potential failure of the component.

    18A
  • Gate to Source Voltage (Vgs)

    The Gate to Source Voltage (Vgs) is a crucial parameter in electronic components, particularly in field-effect transistors (FETs) such as MOSFETs. It refers to the voltage difference between the gate and source terminals of the FET. This voltage determines the conductivity of the FET and controls the flow of current through the device. By varying the Vgs, the FET can be switched on or off, allowing for precise control of electronic circuits. Understanding and properly managing the Vgs is essential for ensuring the reliable and efficient operation of FET-based circuits.

    25V
  • Drain to Source Breakdown Voltage

    Drain to Source Breakdown Voltage, often denoted as V(BR) D-S, is a critical parameter in electronic components, particularly in field-effect transistors (FETs) and metal-oxide-semiconductor FETs (MOSFETs). It represents the maximum voltage that can be applied between the drain and source terminals of the device without causing breakdown or permanent damage. Exceeding this voltage can lead to excessive current flow, resulting in thermal failure or destruction of the component. It is essential for ensuring reliable operation in circuit designs where high voltages may be encountered.

    500V
  • Pulsed Drain Current-Max (IDM)

    The parameter "Pulsed Drain Current-Max (IDM)" in electronic components refers to the maximum current that the device can handle when operated under pulsed conditions. This specification is important for understanding the device's capability to handle short bursts of high current without causing damage. It is typically measured in amperes and is specified for a specific pulse width and duty cycle. Designers use this parameter to ensure that the component can withstand transient current spikes without failing, making it crucial for applications where pulsed operation is common, such as in power electronics and RF circuits.

    72A
  • Avalanche Energy Rating (Eas)

    Avalanche Energy Rating (Eas) is a parameter that quantifies the energy handling capability of a semiconductor device, particularly during avalanche breakdown conditions. It indicates the maximum energy that the device can withstand without being damaged when it experiences an avalanche effect. This rating is crucial for applications where devices might be exposed to over-voltage or other conditions that could cause unintended breakdown, ensuring reliability and longevity in operation. The Eas value helps designers select appropriate components for circuits that may encounter transient events.

    480 mJ
  • RoHS Status

    RoHS means “Restriction of Certain Hazardous Substances” in the “Hazardous Substances Directive” in electrical and electronic equipment.

    ROHS3 Compliant
  • Lead Free

    Lead Free is a term used to describe electronic components that do not contain lead as part of their composition. Lead is a toxic material that can have harmful effects on human health and the environment, so the electronics industry has been moving towards lead-free components to reduce these risks. Lead-free components are typically made using alternative materials such as silver, copper, and tin. Manufacturers must comply with regulations such as the Restriction of Hazardous Substances (RoHS) directive to ensure that their products are lead-free and environmentally friendly.

    Lead Free
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STB21NM50N-1 Overview

There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 480 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1950pF @ 25V.This device conducts a continuous drain current (ID) of 18A, which is the maximum continuous current transistor can conduct.Using VGS=500V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 500V (that is, no charge flow from drain to source).Pulsed drain current is maximum rated peak drain current 72A.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 25V.

STB21NM50N-1 Features

the avalanche energy rating (Eas) is 480 mJ
a continuous drain current (ID) of 18A
a drain-to-source breakdown voltage of 500V voltage
based on its rated peak drain current 72A.

STB21NM50N-1 Applications

There are a lot of STMicroelectronics
STB21NM50N-1 applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
The three parts on the right have similar specifications to STMicroelectronics & STB21NM50N-1.
STB21NM50N-1 Relevant information

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