Toshiba Semiconductor and Storage TTC1949-Y,LF

The "Mounting Type" in electronic components refers to the method used to attach or connect a component to a circuit board or other substrate, such as through-hole, surface-mount, or panel mount.

refers to the protective housing that encases an electronic component, providing mechanical support, electrical connections, and thermal management.

The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.

Moisture Sensitivity Level (MSL) is a standardized rating that indicates the susceptibility of electronic components, particularly semiconductors, to moisture-induced damage during storage and the soldering process, defining the allowable exposure time to ambient conditions before they require special handling or baking to prevent failures

Power - Max is a parameter that specifies the maximum amount of power that an electronic component can handle without being damaged. It is typically measured in watts and indicates the upper limit of power that can be safely supplied to the component. Exceeding the maximum power rating can lead to overheating, malfunction, or permanent damage to the component. It is important to consider the power-max rating when designing circuits or systems to ensure proper operation and longevity of the electronic components.

Transistor type refers to the classification of transistors based on their operation and construction. The two primary types are bipolar junction transistors (BJTs) and field-effect transistors (FETs). BJTs use current to control the flow of current, while FETs utilize voltage to control current flow. Each type has its own subtypes, such as NPN and PNP for BJTs, and MOSFETs and JFETs for FETs, impacting their applications and characteristics in electronic circuits.

The parameter "DC Current Gain (hFE) (Min) @ Ic, Vce" in electronic components refers to the minimum value of the DC current gain, denoted as hFE, under specific operating conditions of collector current (Ic) and collector-emitter voltage (Vce). The DC current gain hFE represents the ratio of the collector current to the base current in a bipolar junction transistor (BJT), indicating the amplification capability of the transistor. The minimum hFE value at a given Ic and Vce helps determine the transistor's performance and efficiency in amplifying signals within a circuit. Designers use this parameter to ensure proper transistor selection and performance in various electronic applications.

The parameter "Current - Collector Cutoff (Max)" refers to the maximum current at which a transistor or other electronic component will cease to conduct current between the collector and emitter terminals. This parameter is important in determining the maximum current that can flow through the component when it is in the cutoff state. Exceeding this maximum cutoff current can lead to malfunction or damage of the component. It is typically specified in the component's datasheet and is crucial for proper circuit design and operation.

The parameter "Vce Saturation (Max) @ Ib, Ic" in electronic components refers to the maximum voltage drop across the collector-emitter junction when the transistor is in saturation mode. This parameter is specified at a certain base current (Ib) and collector current (Ic) levels. It indicates the minimum voltage required to keep the transistor fully conducting in saturation mode, ensuring that the transistor operates efficiently and does not enter the cutoff region. Designers use this parameter to ensure proper transistor operation and to prevent overheating or damage to the component.

Voltage - Collector Emitter Breakdown (Max) is a parameter that specifies the maximum voltage that can be applied between the collector and emitter terminals of a transistor or other semiconductor device before it breaks down and allows excessive current to flow. This parameter is crucial for ensuring the safe and reliable operation of the component within its specified limits. Exceeding the maximum breakdown voltage can lead to permanent damage or failure of the device. Designers and engineers must carefully consider this parameter when selecting components for their circuits to prevent potential issues and ensure proper functionality.

The parameter "Frequency - Transition" in electronic components refers to the maximum frequency at which a signal transition can occur within the component. It is a crucial specification for digital circuits as it determines the speed at which data can be processed and transmitted. A higher frequency transition allows for faster operation and better performance of the electronic component. It is typically measured in hertz (Hz) or megahertz (MHz) and is specified by the manufacturer to ensure proper functioning of the component within a given frequency range.

RoHS means “Restriction of Certain Hazardous Substances” in the “Hazardous Substances Directive” in electrical and electronic equipment.