

Vishay IRFR9110PBF
Manufacturer No:
IRFR9110PBF
Tiny WHSLManufacturer:
Utmel No:
2668-IRFR9110PBF
Package:
-
Description:
Single P-Channel 100 V 1.2 Ohms Surface Mount Power Mosfet - TO-252
Quantity:
Unit Price: $2.601645
Ext Price: $2.60
Delivery:





Payment:











In Stock : 8158
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$2.601645
$2.60
10
$2.454382
$24.54
100
$2.315455
$231.55
500
$2.184391
$1,092.20
1000
$2.060747
$2,060.75
Want a lower wholesale price? Please send RFQ, we will respond immediately.
RFQ Now
Add to RFQ list
You may place an order without registering to Utmel.
We strongly suggest you sign in before purchasing as you can track your order in real time.
For your convenience, we accept multiple payment methods in USD, including PayPal, Credit Card, and wire transfer.
RFQ (Request for Quotations)It is recommended to request for quotations to get the latest prices and inventories about the part.
Our sales will reply to your request by email within 24 hours.
1. You'll receive an order information email in your inbox. (Please remember to check the spam folder if you didn't hear from us).
2. Since inventories and prices may fluctuate to some extent, the sales manager is going to reconfirm the order and let you know if there are any updates.
- TypeParameter
- Mount
In electronic components, the term "Mount" typically refers to the method or process of physically attaching or fixing a component onto a circuit board or other electronic device. This can involve soldering, adhesive bonding, or other techniques to secure the component in place. The mounting process is crucial for ensuring proper electrical connections and mechanical stability within the electronic system. Different components may have specific mounting requirements based on their size, shape, and function, and manufacturers provide guidelines for proper mounting procedures to ensure optimal performance and reliability of the electronic device.
Surface Mount - Number of Pins3
- Weight1.437803 g
- Voltage Rating (DC)-100 V
- Turn Off Delay Time
It is the time from when Vgs drops below 90% of the gate drive voltage to when the drain current drops below 90% of the load current. It is the delay before current starts to transition in the load, and depends on Rg. Ciss.
15 ns - Schedule B8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
- RoHSCompliant
- Number of Elements1
- Fall Time17 ns
- Case/PackageDPAK
- Resistance
Resistance is a fundamental property of electronic components that measures their opposition to the flow of electric current. It is denoted by the symbol "R" and is measured in ohms (Ω). Resistance is caused by the collisions of electrons with atoms in a material, which generates heat and reduces the flow of current. Components with higher resistance will impede the flow of current more than those with lower resistance. Resistance plays a crucial role in determining the behavior and functionality of electronic circuits, such as limiting current flow, voltage division, and controlling power dissipation.
1.2 Ω - Max Operating Temperature
The Maximum Operating Temperature is the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.
150 °C - Min Operating Temperature
The "Min Operating Temperature" parameter in electronic components refers to the lowest temperature at which the component is designed to operate effectively and reliably. This parameter is crucial for ensuring the proper functioning and longevity of the component, as operating below this temperature may lead to performance issues or even damage. Manufacturers specify the minimum operating temperature to provide guidance to users on the environmental conditions in which the component can safely operate. It is important to adhere to this parameter to prevent malfunctions and ensure the overall reliability of the electronic system.
-55 °C - Max Power Dissipation
The maximum power that the MOSFET can dissipate continuously under the specified thermal conditions.
2.5 W - Current Rating
Current rating is the maximum current that a fuse will carry for an indefinite period without too much deterioration of the fuse element.
-3.1 A - Number of Channels1
- Element Configuration
The distribution of electrons of an atom or molecule (or other physical structure) in atomic or molecular orbitals.
Single - Turn On Delay Time
Turn-on delay, td(on), is the time taken to charge the input capacitance of the device before drain current conduction can start.
10 ns - Rise Time
In electronics, when describing a voltage or current step function, rise time is the time taken by a signal to change from a specified low value to a specified high value.
27 ns - Continuous Drain Current (ID)
Continuous Drain Current (ID) is a key parameter in electronic components, particularly in field-effect transistors (FETs) such as MOSFETs. It refers to the maximum current that can flow continuously through the drain terminal of the FET without causing damage to the component. This parameter is crucial for determining the power handling capability of the FET and is specified by the manufacturer in the component's datasheet. Designers must ensure that the actual operating current does not exceed the specified Continuous Drain Current to prevent overheating and potential failure of the component.
3.1 A - Threshold Voltage
The threshold voltage is a critical parameter in electronic components, particularly in field-effect transistors (FETs). It refers to the minimum voltage required at the input terminal of the FET to turn it on and allow current to flow between the source and drain terminals. Below the threshold voltage, the FET remains in the off state, acting as an open switch. Once the threshold voltage is exceeded, the FET enters the on state, conducting current between the source and drain.The threshold voltage is a key factor in determining the operating characteristics of FETs, such as their switching speed and power consumption. It is typically specified by the manufacturer and can vary depending on the specific type of FET and its design. Designers must consider the threshold voltage when selecting FETs for a particular application to ensure proper functionality and performance.
-4 V - Gate to Source Voltage (Vgs)
The Gate to Source Voltage (Vgs) is a crucial parameter in electronic components, particularly in field-effect transistors (FETs) such as MOSFETs. It refers to the voltage difference between the gate and source terminals of the FET. This voltage determines the conductivity of the FET and controls the flow of current through the device. By varying the Vgs, the FET can be switched on or off, allowing for precise control of electronic circuits. Understanding and properly managing the Vgs is essential for ensuring the reliable and efficient operation of FET-based circuits.
20 V - Drain to Source Breakdown Voltage
Drain to Source Breakdown Voltage, often denoted as V(BR) D-S, is a critical parameter in electronic components, particularly in field-effect transistors (FETs) and metal-oxide-semiconductor FETs (MOSFETs). It represents the maximum voltage that can be applied between the drain and source terminals of the device without causing breakdown or permanent damage. Exceeding this voltage can lead to excessive current flow, resulting in thermal failure or destruction of the component. It is essential for ensuring reliable operation in circuit designs where high voltages may be encountered.
-100 V - Input Capacitance
The capacitance between the input terminals of an op amp with either input grounded. It is expressed in units of farads.
200 pF - Recovery Time
Recovery time in electronic components refers to the time it takes for a device to return to its normal operating state after being subjected to a specific stimulus or disturbance. This parameter is particularly important in devices such as diodes, transistors, and capacitors, where the recovery time can impact the overall performance and reliability of the component. A shorter recovery time indicates that the component can quickly recover from a transient event, ensuring proper functionality and minimizing any potential disruptions in the circuit. Manufacturers typically provide recovery time specifications to help engineers and designers select components that meet the requirements of their specific applications.
160 ns - Drain to Source Resistance
The Drain to Source Resistance, often denoted as RDS(on), is a crucial parameter in electronic components, particularly in field-effect transistors (FETs) such as MOSFETs. It represents the resistance between the drain and source terminals when the FET is in its on-state, conducting current. A lower RDS(on) value indicates better conductivity and efficiency, as it results in less power dissipation and heat generation in the component. Designers often aim to minimize RDS(on) to improve the performance and overall efficiency of electronic circuits, especially in power applications where minimizing losses is critical.
1.2 Ω - Rds On Max
Rds On Max refers to the maximum on-state resistance of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) when it is fully conducting. This parameter indicates the resistance that the MOSFET presents when it is in the ON state, allowing current to flow through. A lower Rds On Max value indicates that the MOSFET can conduct more current with less resistance, leading to higher efficiency and lower power dissipation. Designers often look for MOSFETs with a lower Rds On Max value to minimize power losses and improve overall performance in electronic circuits.
1.2 Ω - Width6.22 mm
- Length6.73 mm
- Height2.39 mm
- REACH SVHC
The parameter "REACH SVHC" in electronic components refers to the compliance with the Registration, Evaluation, Authorization, and Restriction of Chemicals (REACH) regulation regarding Substances of Very High Concern (SVHC). SVHCs are substances that may have serious effects on human health or the environment, and their use is regulated under REACH to ensure their safe handling and minimize their impact.Manufacturers of electronic components need to declare if their products contain any SVHCs above a certain threshold concentration and provide information on the safe use of these substances. This information allows customers to make informed decisions about the potential risks associated with using the components and take appropriate measures to mitigate any hazards.Ensuring compliance with REACH SVHC requirements is essential for electronics manufacturers to meet regulatory standards, protect human health and the environment, and maintain transparency in their supply chain. It also demonstrates a commitment to sustainability and responsible manufacturing practices in the electronics industry.
Unknown - Radiation Hardening
Radiation hardening is the process of making electronic components and circuits resistant to damage or malfunction caused by high levels of ionizing radiation, especially for environments in outer space (especially beyond the low Earth orbit), around nuclear reactors and particle accelerators, or during nuclear accidents or nuclear warfare.
No - Lead Free
Lead Free is a term used to describe electronic components that do not contain lead as part of their composition. Lead is a toxic material that can have harmful effects on human health and the environment, so the electronics industry has been moving towards lead-free components to reduce these risks. Lead-free components are typically made using alternative materials such as silver, copper, and tin. Manufacturers must comply with regulations such as the Restriction of Hazardous Substances (RoHS) directive to ensure that their products are lead-free and environmentally friendly.
Lead Free