1N914 Diode: Alternatives, Features and Datasheet

Sophie

Published: 09 August 2021 | Last Updated: 09 August 2021

8095

1N914

1N914

Microsemi Corporation

Standard Diode Rectifier Small Signal =< 200mA (Io), Any Speed 1.2V @ 50mA -65°C~175°C 500nA @ 75V Bulk DO-204AH, DO-35, Axial Through Hole

Purchase Guide

Standard Diode Rectifier Small Signal =< 200mA (Io), Any Speed 1.2V @ 50mA -65°C~175°C 500nA @ 75V Bulk DO-204AH, DO-35, Axial Through Hole

Hello Everybody! I always love to keep your stomach filled with useful information so you can excel and grow in your professional field. Today, I am going to reveal the details on the Introduction to 1N914.1N914 is a switching/signal diode. This article mainly introduce its alternatives, features and datasheet.

This video will show you how to modify the tubulator using TL082CP and 1N914.

ARION MTE-1 TUBULATOR (Modify) TL082CP 1N914 1:1

1N914 Description

This 1N914 JEDEC registered switching/signal diode features internal metallurgical bonded construction for military grade products per MIL-PRF-19500/116. 


This small low capacitance diode, with very fast switching speeds, is hermetically sealed and bonded into a double-plug DO-35 package. 


It may be used in a variety of very high speed applications including switchers, detectors, transient OR'ing, logic arrays, blocking, as well as low-capacitance steering diodes, etc. 


1N914 Pinout

1N914 Pinout.jpg

1N914 CAD Model

Symbol

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Footprint

Footprint.png

3D Model

1N914 3D Model.jpg


1N914 Features

●Peak repetitive Reverse voltage :100V

●RMS reverse voltage:75V

●Peak forward surge current: 4A

●Forward continuous current If 300mA

●Reverse recovery time 8ns

●Available in DO-35 Package

●Highly reliable and come with low cost.

●Hermetically sealed glass construction.

●Metallurgically bonded.

●Double plug construction.

●Very low capacitance.

●Very fast switching speeds with minimal reverse recovery times.

 


Specifications

Microsemi Corporation 1N914 technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation 1N914.
  • Type
    Parameter
  • Lifecycle Status

    Lifecycle Status refers to the current stage of an electronic component in its product life cycle, indicating whether it is active, obsolete, or transitioning between these states. An active status means the component is in production and available for purchase. An obsolete status indicates that the component is no longer being manufactured or supported, and manufacturers typically provide a limited time frame for support. Understanding the lifecycle status is crucial for design engineers to ensure continuity and reliability in their projects.

    IN PRODUCTION (Last Updated: 1 month ago)
  • Factory Lead Time
    6 Weeks
  • Mount

    In electronic components, the term "Mount" typically refers to the method or process of physically attaching or fixing a component onto a circuit board or other electronic device. This can involve soldering, adhesive bonding, or other techniques to secure the component in place. The mounting process is crucial for ensuring proper electrical connections and mechanical stability within the electronic system. Different components may have specific mounting requirements based on their size, shape, and function, and manufacturers provide guidelines for proper mounting procedures to ensure optimal performance and reliability of the electronic device.

    Through Hole
  • Mounting Type

    The "Mounting Type" in electronic components refers to the method used to attach or connect a component to a circuit board or other substrate, such as through-hole, surface-mount, or panel mount.

    Through Hole
  • Package / Case

    refers to the protective housing that encases an electronic component, providing mechanical support, electrical connections, and thermal management.

    DO-204AH, DO-35, Axial
  • Number of Pins
    2
  • Supplier Device Package

    The parameter "Supplier Device Package" in electronic components refers to the physical packaging or housing of the component as provided by the supplier. It specifies the form factor, dimensions, and layout of the component, which are crucial for compatibility and integration into electronic circuits and systems. The supplier device package information typically includes details such as the package type (e.g., DIP, SOP, QFN), number of pins, pitch, and overall size, allowing engineers and designers to select the appropriate component for their specific application requirements. Understanding the supplier device package is essential for proper component selection, placement, and soldering during the manufacturing process to ensure optimal performance and reliability of the electronic system.

    DO-35 (DO-204AH)
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Bulk
  • Published
    1999
  • Part Status

    Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.

    Active
  • Moisture Sensitivity Level (MSL)

    Moisture Sensitivity Level (MSL) is a standardized rating that indicates the susceptibility of electronic components, particularly semiconductors, to moisture-induced damage during storage and the soldering process, defining the allowable exposure time to ambient conditions before they require special handling or baking to prevent failures

    1 (Unlimited)
  • Max Operating Temperature

    The Maximum Operating Temperature is the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

    175°C
  • Min Operating Temperature

    The "Min Operating Temperature" parameter in electronic components refers to the lowest temperature at which the component is designed to operate effectively and reliably. This parameter is crucial for ensuring the proper functioning and longevity of the component, as operating below this temperature may lead to performance issues or even damage. Manufacturers specify the minimum operating temperature to provide guidance to users on the environmental conditions in which the component can safely operate. It is important to adhere to this parameter to prevent malfunctions and ensure the overall reliability of the electronic system.

    -65°C
  • Element Configuration

    The distribution of electrons of an atom or molecule (or other physical structure) in atomic or molecular orbitals.

    Single
  • Speed

    In electronic components, "Speed" typically refers to the rate at which data can be processed or transferred within the component. It is a measure of how quickly the component can perform its functions, such as executing instructions or transmitting signals. Speed is often specified in terms of frequency, such as clock speed in processors or data transfer rate in memory modules. Higher speed components can perform tasks more quickly, leading to improved overall performance in electronic devices. It is an important parameter to consider when designing or selecting electronic components for specific applications.

    Small Signal =< 200mA (Io), Any Speed
  • Diode Type

    In electronic components, the parameter "Diode Type" refers to the specific type or configuration of a diode, which is a semiconductor device that allows current to flow in one direction only. There are various types of diodes, each designed for specific applications and functions. Common diode types include rectifier diodes, zener diodes, light-emitting diodes (LEDs), and Schottky diodes, among others. The diode type determines the diode's characteristics, such as forward voltage drop, reverse breakdown voltage, and maximum current rating, making it crucial for selecting the right diode for a particular circuit or application. Understanding the diode type is essential for ensuring proper functionality and performance in electronic circuits.

    Standard
  • Current - Reverse Leakage @ Vr

    Current - Reverse Leakage @ Vr is a parameter that describes the amount of current that flows in the reverse direction through a diode or other semiconductor component when a reverse voltage (Vr) is applied across it. This leakage current is typically very small, but it is important to consider in electronic circuits as it can affect the overall performance and reliability of the component. The reverse leakage current is influenced by factors such as the material properties of the semiconductor, temperature, and the magnitude of the reverse voltage applied. Manufacturers provide this parameter in datasheets to help engineers and designers understand the behavior of the component in reverse bias conditions.

    500nA @ 75V
  • Voltage - Forward (Vf) (Max) @ If

    The parameter "Voltage - Forward (Vf) (Max) @ If" refers to the maximum voltage drop across a diode when it is forward-biased and conducting a specified forward current (If). It indicates the maximum potential difference the diode can withstand while allowing current to flow in the forward direction without breaking down. This value is crucial for designing circuits as it helps determine how much voltage will be lost across the diode during operation. Higher Vf values can lead to reduced efficiency in power applications, making this parameter essential for optimizing circuit performance.

    1.2V @ 50mA
  • Operating Temperature - Junction

    Operating Temperature - Junction refers to the maximum temperature at which the junction of an electronic component can safely operate without causing damage or performance degradation. This parameter is crucial for determining the reliability and longevity of the component, as excessive heat can lead to thermal stress and failure. Manufacturers specify the operating temperature range to ensure that the component functions within safe limits under normal operating conditions. It is important for designers and engineers to consider the operating temperature - junction when selecting and using electronic components to prevent overheating and ensure optimal performance.

    -65°C~175°C
  • Voltage - DC Reverse (Vr) (Max)

    Voltage - DC Reverse (Vr) (Max) is a parameter in electronic components that specifies the maximum reverse voltage that the component can withstand without breaking down. This parameter is crucial for components like diodes and transistors that are often subjected to reverse voltage during operation. Exceeding the maximum reverse voltage can lead to the component failing or getting damaged. Designers need to consider this parameter when selecting components to ensure the reliability and longevity of their circuits.

    75V
  • Current - Average Rectified (Io)

    The parameter "Current - Average Rectified (Io)" in electronic components refers to the average value of the rectified current flowing through the component. This parameter is important in determining the average power dissipation and thermal considerations of the component. It is typically specified in datasheets for diodes, rectifiers, and other components that handle alternating current (AC) and convert it to direct current (DC). Understanding the average rectified current helps in selecting the appropriate component for a given application to ensure reliable operation and prevent overheating.

    200mA
  • Forward Voltage

    the amount of voltage needed to get current to flow across a diode.

    1.2V
  • Max Reverse Voltage (DC)

    Max Reverse Voltage (DC) refers to the maximum voltage that a semiconductor device, such as a diode, can withstand in the reverse bias direction without failing. Exceeding this voltage can lead to breakdown and potential damage to the component. It is a critical parameter in circuit design to ensure reliability and prevent failure when the device is subjected to reverse voltage conditions.

    75V
  • Average Rectified Current

    Mainly used to characterize alternating voltage and current. It can be computed by averaging the absolute value of a waveform over one full period of the waveform.

    200mA
  • Reverse Recovery Time

    Reverse Recovery Time is a key parameter in semiconductor devices, particularly diodes and transistors. It refers to the time taken for a diode or transistor to switch from conducting in the forward direction to blocking in the reverse direction when the polarity of the voltage across the device is reversed. This parameter is crucial in applications where fast switching speeds are required, as a shorter reverse recovery time allows for quicker response times and improved efficiency. Reverse Recovery Time is typically specified in datasheets for electronic components and is an important consideration in circuit design to ensure optimal performance and reliability.

    20 ns
  • Peak Reverse Current

    The maximum voltage that a diode can withstand in the reverse direction without breaking down or avalanching.If this voltage is exceeded the diode may be destroyed. Diodes must have a peak inverse voltage rating that is higher than the maximum voltage that will be applied to them in a given application.

    500nA
  • Max Repetitive Reverse Voltage (Vrrm)

    The Max Repetitive Reverse Voltage (Vrrm) is a crucial parameter in electronic components, particularly in diodes and transistors. It refers to the maximum voltage that can be applied across the component in the reverse direction without causing damage. This parameter is important for ensuring the proper functioning and longevity of the component in circuits where reverse voltage may be present. Exceeding the Vrrm rating can lead to breakdown and failure of the component, so it is essential to carefully consider this specification when designing or selecting components for a circuit.

    75V
  • Capacitance @ Vr, F

    Capacitance @ Vr, F refers to the capacitance value of a capacitor measured at a specified rated voltage (Vr). It indicates how much electrical charge the capacitor can store per volt when subjected to this voltage. This parameter is essential for understanding the behavior of capacitors in circuits, particularly under different voltage conditions, and ensures that the component operates within its safe limits. The unit of measurement is Farads (F), which quantifies the capacitor's ability to hold an electrical charge.

    4pF @ 0V 1MHz
  • Peak Non-Repetitive Surge Current

    Peak Non-Repetitive Surge Current is a specification in electronic components that refers to the maximum current that the component can withstand for a short duration without sustaining damage. This surge current typically occurs as a result of sudden voltage spikes or transient events in the circuit. It is important to consider this parameter when designing or selecting components to ensure they can handle occasional high-current surges without failing. The value of Peak Non-Repetitive Surge Current is usually specified in amperes and is crucial for protecting the component and maintaining the overall reliability of the circuit.

    2A
  • Radiation Hardening

    Radiation hardening is the process of making electronic components and circuits resistant to damage or malfunction caused by high levels of ionizing radiation, especially for environments in outer space (especially beyond the low Earth orbit), around nuclear reactors and particle accelerators, or during nuclear accidents or nuclear warfare.

    No
  • RoHS Status

    RoHS means “Restriction of Certain Hazardous Substances” in the “Hazardous Substances Directive” in electrical and electronic equipment.

    Non-RoHS Compliant
0 Similar Products Remaining

1N914 Alternatives

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1N914 VS 1N914TR

1N914 VS 1N914TR.png

1N914 Applications

●Prevent reverse polarity problem

●Half Wave and Full Wave rectifiers

●Protection device

●Current flow regulators

●Industrial applications.

●Power management and portable devices  

●It is useful for the demodulation of AM (amplitude modulated) radio signal.

●Temperature sensing device


1N914 Manufacturer

Microsemi Corporation was an Aliso Viejo, California-based provider of semiconductor and system solutions for aerospace & defense, communications, data center and industrial markets. Products include high-performance and radiation-hardened analog mixed-signal integrated circuits, FPGAs, SoCs and ASICs; power management products; timing and synchronization devices and precise time solutions, setting the world's standard for time; voice processing devices; RF solutions; discrete components; enterprise storage and communication solutions, security technologies and scalable anti-tamper products; Ethernet solutions; Power-over-Ethernet ICs and midspans; as well as custom design capabilities and services.


Datasheet PDF

Download datasheets and manufacturer documentation for Microsemi Corporation 1N914.
Frequently Asked Questions

1.What diode can replace 1N914?

1N914 is a switching diode, which can be replaced by 1N4148 and 1N5819.

2.How to prevent reverse charging when charging lithium batteries?

Just connect a diode (1N914 or 1N4148) in series between the charging and the battery to be charged. The anode of the diode is connected to the positive electrode of the rechargeable battery, and the negative electrode is connected to the positive electrode of the rechargeable battery. The rechargeable battery and the negative electrode of the rechargeable battery are directly connected with a wire. When the voltage is higher than the rechargeable battery, the diode will be reversely cut off, which can prevent the current from flowing backward.

3.What is the leakage current in a PN junction diode?

The leakage current is a small current that flows when a diode is back biased. For a small signal diode such as a 1N914, it’s around 1 micro amp or less. For a power diode such as a 1N4004, it’s maybe 10 to 100 micro amps. It is highly temperature dependent.
1N914

Microsemi Corporation

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