Difference Between BS170 N-Channel MOSFET vs. 2N7000 N-Channel MOSFET [Video&FAQ]

Pinout

The BS170 is a well-known N-channel MOSFET in a TO-92 package. Fairchild's patented high-density DMOS cell technology was used to create this product.

This ultra-high-density technology is designed to reduce state resistance while delivering stable, reliable, and quick switching.

It can be used for switching as well as amplification. It can drive a load of 500mA when used as a switch. It has fast switching capabilities and can swap load in roughly 7 nanoseconds, allowing it to be employed in high-speed circuits.

It can also operate at low voltages, making it a suitable MOSFET for use in portable and battery-powered devices. It can also be used as an amplifier, and it can be employed in audio amplifier circuits as well as for other general-purpose signal amplification needs.

Low voltage and low current applications, such as tiny servo motor control, power MOSFET gate drivers, and other switching applications, are also suited for the BS170.

Pinout

The 2N7000  is an N-channel enhancement mode Field-Effect Transistor  made with Fairchild's DMOS technology  , which has a high cell density  . This high-density method was created to reduce on-state resistance while providing durable, dependable, and quick switching performance. It can deliver pulsed current up to 2A and can be used in most applications requiring up to 400mA DC.

BS170 Features

• Pb-Free device

• Low offset and error voltage 

• Easily driven without buffer

• High density cell design to minimize ON-state resistance RDS(ON)

• Voltage controlled small signal switch 

• Particularly suits for low voltage, low current application

• High saturation current capability

• Rugged and Reliable

• Fast switching (TON = 4ns)

2N7000 Features

• Small signal N-Channel MOSFET

• Drain-Source Voltage (VDS) is 60V

• Continuous Drain Current (ID) is 200mA

• Pulsed Drain Current (ID-peak) is 500mA

• Gate threshold voltage (VGS-th) is 3V

• Gate-Source Voltage is (VGS) is ±20V

• Turn ON and Turn off time is 10ns each.

• Available in To-92 Package

BS170 Applications

• Battery operated systems

• Solid-state relays 

• Drivers: Relays,  Solenoids , Lamps, Hammers, Displays, Memories, Transistors, etc.

• Direct Logic-Level Interface:  TTL /CMOS

2N7000 Applications

• Switching High voltage loads 

• Commonly used for small signal switching 

• LED dimmers or flashers

• Low power Analog converters or inverters

BS170 Equivalents

2N7000, 2N7002, VQ1000J, VQ1000P, IRLML2502.

2N7000 Equivalents

BS170, NTE 491, IRF3205, IRF540N, IRF9Z34N, IRFP250N, IRFZ44.

The followings show you the Package of two MOSFETs.

BS170 Package

2N7000 Package

Both the 2N7000 and the BS170 are 60 V devices that come in a TO-92 package. 200 mA can be switched using the 2N7000. With a maximum on-resistance of 5 at 10 V Vgs, the BS170 can switch 500 mA. The 2N7002 is a comparable part to the 2N7000, however, it is packaged differently.

Because their voltage specs, such as terminal voltage and threshold voltage values, are the same, the 2N7000 and BS170 MOSFETs are the most similar devices.

However, in terms of current specifications, the BS170 has a greater load capability; its power dissipation is twice that of the 2N7000.

BS170 Datasheet

2N7000 Datasheet