BS170 N-Channel MOSFET: Pinout, Equivalent and Datasheet
N-Channel Bulk 5Ohm @ 200mA, 10V ±20V 40pF @ 10V 60V TO-226-3, TO-92-3 (TO-226AA)









N-Channel Bulk 5Ohm @ 200mA, 10V ±20V 40pF @ 10V 60V TO-226-3, TO-92-3 (TO-226AA)
Hi fellas, I am back to give you a post about electronic components BS170. BS170 is a well-known N channel MOSFET manufactured in the TO-92 package. This article mainly introduces pinout, equivalent, datasheet, and other detailed information about On Semiconductor BS170.

How to make a simple LED light sensor (MOSFET transistor BS170, LEDs as photovoltaic cells)
BS170 Description
BS170 is a well-known N channel MOSFET manufactured in the TO-92 package. produced using Fairchild's proprietary high-density DMOS cell technology.
This ultra-high-density process is designed to minimize resistance in the state while providing robust, reliable, and fast switching performance.
It can be used for both switching and amplification purposes. When used as a switch it can drive a load of 500mA. It is able to perform fast switching and capable to switch load in around 7 nanoseconds due to which it can be used in high-speed circuits.
It can also perform well on low voltage due to which it is an ideal MOSFET to use in portable and battery-operated applications. Other than that it can also be used as an amplifier and you can use it in your audio amplifier circuits and also for any general-purpose signal amplification requirements.
It is also suitable for low voltage and low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.
BS170 Pinout

Pinout

Pin Description
BS170 CAD Model

Symbol

Footprint

3D Model
BS170 Features
-Available in a TO-92 package
-Transistor Type: N Channel
-Voltage Applied From Drain to Source: 60V(Maximum)
-Gate to Source Voltage Should Be: ±20V(Maximum)
-Continues Drain Current is: 500mA(Maximum)
-Pulsed Drain Current is: 500mA(Maximum)
-Power Dissipation is: 830mW(Maximum)
-Voltage Required to Conduct: 0.8V(Minimum)
-Storage & Operating temperature Should Be: -55 to +150 Celsius
-Pb-Free device
-Low Offset and Error Voltage
-Easily Driven Without Buffer
-High-Density Cell Design to Minimize ON-state Resistance-RDS(ON)
-Voltage Controlled Small Signal Switch
-High Saturation Current Capability
-Rugged and Reliable
-Fast Switching (TON = 4ns)
Specifications
- TypeParameter
- Lifecycle Status
Lifecycle Status refers to the current stage of an electronic component in its product life cycle, indicating whether it is active, obsolete, or transitioning between these states. An active status means the component is in production and available for purchase. An obsolete status indicates that the component is no longer being manufactured or supported, and manufacturers typically provide a limited time frame for support. Understanding the lifecycle status is crucial for design engineers to ensure continuity and reliability in their projects.
ACTIVE (Last Updated: 1 day ago) - Factory Lead Time11 Weeks
- Contact Plating
Contact plating (finish) provides corrosion protection for base metals and optimizes the mechanical and electrical properties of the contact interfaces.
Copper, Silver, Tin - Mount
In electronic components, the term "Mount" typically refers to the method or process of physically attaching or fixing a component onto a circuit board or other electronic device. This can involve soldering, adhesive bonding, or other techniques to secure the component in place. The mounting process is crucial for ensuring proper electrical connections and mechanical stability within the electronic system. Different components may have specific mounting requirements based on their size, shape, and function, and manufacturers provide guidelines for proper mounting procedures to ensure optimal performance and reliability of the electronic device.
Through Hole - Mounting Type
The "Mounting Type" in electronic components refers to the method used to attach or connect a component to a circuit board or other substrate, such as through-hole, surface-mount, or panel mount.
Through Hole - Package / Case
refers to the protective housing that encases an electronic component, providing mechanical support, electrical connections, and thermal management.
TO-226-3, TO-92-3 (TO-226AA) - Number of Pins3
- Supplier Device Package
The parameter "Supplier Device Package" in electronic components refers to the physical packaging or housing of the component as provided by the supplier. It specifies the form factor, dimensions, and layout of the component, which are crucial for compatibility and integration into electronic circuits and systems. The supplier device package information typically includes details such as the package type (e.g., DIP, SOP, QFN), number of pins, pitch, and overall size, allowing engineers and designers to select the appropriate component for their specific application requirements. Understanding the supplier device package is essential for proper component selection, placement, and soldering during the manufacturing process to ensure optimal performance and reliability of the electronic system.
TO-92-3 - Weight4.535924g
- Current - Continuous Drain (Id) @ 25℃500mA Ta
- Drive Voltage (Max Rds On, Min Rds On)10V
- Number of Elements1
- Power Dissipation (Max)830mW Ta
- Operating Temperature
The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.
-55°C~150°C TJ - Packaging
Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.
Bulk - Published2005
- Part Status
Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.
Active - Moisture Sensitivity Level (MSL)
Moisture Sensitivity Level (MSL) is a standardized rating that indicates the susceptibility of electronic components, particularly semiconductors, to moisture-induced damage during storage and the soldering process, defining the allowable exposure time to ambient conditions before they require special handling or baking to prevent failures
1 (Unlimited) - Resistance
Resistance is a fundamental property of electronic components that measures their opposition to the flow of electric current. It is denoted by the symbol "R" and is measured in ohms (Ω). Resistance is caused by the collisions of electrons with atoms in a material, which generates heat and reduces the flow of current. Components with higher resistance will impede the flow of current more than those with lower resistance. Resistance plays a crucial role in determining the behavior and functionality of electronic circuits, such as limiting current flow, voltage division, and controlling power dissipation.
5Ohm - Max Operating Temperature
The Maximum Operating Temperature is the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.
150°C - Min Operating Temperature
The "Min Operating Temperature" parameter in electronic components refers to the lowest temperature at which the component is designed to operate effectively and reliably. This parameter is crucial for ensuring the proper functioning and longevity of the component, as operating below this temperature may lead to performance issues or even damage. Manufacturers specify the minimum operating temperature to provide guidance to users on the environmental conditions in which the component can safely operate. It is important to adhere to this parameter to prevent malfunctions and ensure the overall reliability of the electronic system.
-55°C - Voltage - Rated DC
Voltage - Rated DC is a parameter that specifies the maximum direct current (DC) voltage that an electronic component can safely handle without being damaged. This rating is crucial for ensuring the proper functioning and longevity of the component in a circuit. Exceeding the rated DC voltage can lead to overheating, breakdown, or even permanent damage to the component. It is important to carefully consider this parameter when designing or selecting components for a circuit to prevent any potential issues related to voltage overload.
60V - Current Rating
Current rating is the maximum current that a fuse will carry for an indefinite period without too much deterioration of the fuse element.
500mA - Base Part Number
The "Base Part Number" (BPN) in electronic components serves a similar purpose to the "Base Product Number." It refers to the primary identifier for a component that captures the essential characteristics shared by a group of similar components. The BPN provides a fundamental way to reference a family or series of components without specifying all the variations and specific details.
BS170 - Voltage
Voltage is a measure of the electric potential difference between two points in an electrical circuit. It is typically represented by the symbol "V" and is measured in volts. Voltage is a crucial parameter in electronic components as it determines the flow of electric current through a circuit. It is responsible for driving the movement of electrons from one point to another, providing the energy needed for electronic devices to function properly. In summary, voltage is a fundamental concept in electronics that plays a key role in the operation and performance of electronic components.
60V - Element Configuration
The distribution of electrons of an atom or molecule (or other physical structure) in atomic or molecular orbitals.
Single - Current
In electronic components, "Current" refers to the flow of electric charge through a conductor or semiconductor material. It is measured in amperes (A) and represents the rate at which electric charge is moving past a specific point in a circuit. Current is a crucial parameter in electronics as it determines the amount of power being consumed or delivered by a component. Understanding and controlling current is essential for designing and operating electronic circuits efficiently and safely. In summary, current is a fundamental electrical quantity that plays a key role in the functionality and performance of electronic components.
5A - Power Dissipation
the process by which an electronic or electrical device produces heat (energy loss or waste) as an undesirable derivative of its primary action.
830mW - FET Type
"FET Type" refers to the type of Field-Effect Transistor (FET) being used in an electronic component. FETs are three-terminal semiconductor devices that can be classified into different types based on their construction and operation. The main types of FETs include Metal-Oxide-Semiconductor FETs (MOSFETs), Junction FETs (JFETs), and Insulated-Gate Bipolar Transistors (IGBTs).Each type of FET has its own unique characteristics and applications. MOSFETs are commonly used in digital circuits due to their high input impedance and low power consumption. JFETs are often used in low-noise amplifiers and switching circuits. IGBTs combine the high input impedance of MOSFETs with the high current-carrying capability of bipolar transistors, making them suitable for high-power applications like motor control and power inverters.When selecting an electronic component, understanding the FET type is crucial as it determines the device's performance and suitability for a specific application. It is important to consider factors such as voltage ratings, current handling capabilities, switching speeds, and power dissipation when choosing the right FET type for a particular circuit design.
N-Channel - Rds On (Max) @ Id, Vgs
Rds On (Max) @ Id, Vgs refers to the maximum on-resistance of a MOSFET or similar transistor when it is fully turned on or in the saturation region. It is specified at a given drain current (Id) and gate-source voltage (Vgs). This parameter indicates how much resistance the component will offer when conducting, impacting power loss and efficiency in a circuit. Lower Rds On values are preferred for better performance in switching applications.
5Ohm @ 200mA, 10V - Vgs(th) (Max) @ Id
The parameter "Vgs(th) (Max) @ Id" in electronic components refers to the maximum gate-source threshold voltage at a specified drain current (Id). This parameter is commonly found in field-effect transistors (FETs) and is used to define the minimum voltage required at the gate terminal to turn on the transistor and allow current to flow from the drain to the source. The maximum value indicates the upper limit of this threshold voltage under specified operating conditions. It is an important parameter for determining the proper biasing and operating conditions of the FET in a circuit to ensure proper functionality and performance.
3V @ 1mA - Input Capacitance (Ciss) (Max) @ Vds
The parameter "Input Capacitance (Ciss) (Max) @ Vds" in electronic components refers to the maximum input capacitance measured at a specific drain-source voltage (Vds). Input capacitance is a crucial parameter in field-effect transistors (FETs) and power MOSFETs, as it represents the total capacitance at the input terminal of the device. This capacitance affects the device's switching speed and overall performance, as it influences the time required for charging and discharging during operation. Manufacturers provide this parameter to help designers understand the device's input characteristics and make informed decisions when integrating it into a circuit.
40pF @ 10V - Drain to Source Voltage (Vdss)
The Drain to Source Voltage (Vdss) is a key parameter in electronic components, particularly in field-effect transistors (FETs) such as MOSFETs. It refers to the maximum voltage that can be applied between the drain and source terminals of the FET without causing damage to the component. Exceeding this voltage limit can lead to breakdown and potentially permanent damage to the device.Vdss is an important specification to consider when designing or selecting components for a circuit, as it determines the operating range and reliability of the FET. It is crucial to ensure that the Vdss rating of the component is higher than the maximum voltage expected in the circuit to prevent failures and ensure proper functionality.In summary, the Drain to Source Voltage (Vdss) is a critical parameter that defines the maximum voltage tolerance of a FET component and plays a significant role in determining the overall performance and reliability of electronic circuits.
60V - Vgs (Max)
Vgs (Max) refers to the maximum gate-source voltage that can be applied to a field-effect transistor (FET) without causing damage to the component. This parameter is crucial in determining the safe operating limits of the FET and helps prevent overvoltage conditions that could lead to device failure. Exceeding the specified Vgs (Max) rating can result in breakdown of the gate oxide layer, leading to permanent damage to the FET. Designers must ensure that the applied gate-source voltage does not exceed the maximum rating to ensure reliable and long-term operation of the electronic component.
±20V - Continuous Drain Current (ID)
Continuous Drain Current (ID) is a key parameter in electronic components, particularly in field-effect transistors (FETs) such as MOSFETs. It refers to the maximum current that can flow continuously through the drain terminal of the FET without causing damage to the component. This parameter is crucial for determining the power handling capability of the FET and is specified by the manufacturer in the component's datasheet. Designers must ensure that the actual operating current does not exceed the specified Continuous Drain Current to prevent overheating and potential failure of the component.
500mA - Threshold Voltage
The threshold voltage is a critical parameter in electronic components, particularly in field-effect transistors (FETs). It refers to the minimum voltage required at the input terminal of the FET to turn it on and allow current to flow between the source and drain terminals. Below the threshold voltage, the FET remains in the off state, acting as an open switch. Once the threshold voltage is exceeded, the FET enters the on state, conducting current between the source and drain.The threshold voltage is a key factor in determining the operating characteristics of FETs, such as their switching speed and power consumption. It is typically specified by the manufacturer and can vary depending on the specific type of FET and its design. Designers must consider the threshold voltage when selecting FETs for a particular application to ensure proper functionality and performance.
2.1V - Gate to Source Voltage (Vgs)
The Gate to Source Voltage (Vgs) is a crucial parameter in electronic components, particularly in field-effect transistors (FETs) such as MOSFETs. It refers to the voltage difference between the gate and source terminals of the FET. This voltage determines the conductivity of the FET and controls the flow of current through the device. By varying the Vgs, the FET can be switched on or off, allowing for precise control of electronic circuits. Understanding and properly managing the Vgs is essential for ensuring the reliable and efficient operation of FET-based circuits.
20V - Drain to Source Breakdown Voltage
Drain to Source Breakdown Voltage, often denoted as V(BR) D-S, is a critical parameter in electronic components, particularly in field-effect transistors (FETs) and metal-oxide-semiconductor FETs (MOSFETs). It represents the maximum voltage that can be applied between the drain and source terminals of the device without causing breakdown or permanent damage. Exceeding this voltage can lead to excessive current flow, resulting in thermal failure or destruction of the component. It is essential for ensuring reliable operation in circuit designs where high voltages may be encountered.
60V - Input Capacitance
The capacitance between the input terminals of an op amp with either input grounded. It is expressed in units of farads.
24pF - Drain to Source Resistance
The Drain to Source Resistance, often denoted as RDS(on), is a crucial parameter in electronic components, particularly in field-effect transistors (FETs) such as MOSFETs. It represents the resistance between the drain and source terminals when the FET is in its on-state, conducting current. A lower RDS(on) value indicates better conductivity and efficiency, as it results in less power dissipation and heat generation in the component. Designers often aim to minimize RDS(on) to improve the performance and overall efficiency of electronic circuits, especially in power applications where minimizing losses is critical.
5Ohm - Rds On Max
Rds On Max refers to the maximum on-state resistance of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) when it is fully conducting. This parameter indicates the resistance that the MOSFET presents when it is in the ON state, allowing current to flow through. A lower Rds On Max value indicates that the MOSFET can conduct more current with less resistance, leading to higher efficiency and lower power dissipation. Designers often look for MOSFETs with a lower Rds On Max value to minimize power losses and improve overall performance in electronic circuits.
5 Ω - Nominal Vgs
Nominal Vgs refers to the standard or expected gate-source voltage in field-effect transistors (FETs) and other related electronic components. It represents the voltage level at which the transistor operates optimally, ensuring proper switching characteristics and performance. This parameter is crucial for designers to determine the appropriate control signals required for efficient operation of the device in circuits. Variations from the nominal Vgs can affect the performance and reliability of the component.
2.1 V - Height5.33mm
- Length5.2mm
- Width4.19mm
- REACH SVHC
The parameter "REACH SVHC" in electronic components refers to the compliance with the Registration, Evaluation, Authorization, and Restriction of Chemicals (REACH) regulation regarding Substances of Very High Concern (SVHC). SVHCs are substances that may have serious effects on human health or the environment, and their use is regulated under REACH to ensure their safe handling and minimize their impact.Manufacturers of electronic components need to declare if their products contain any SVHCs above a certain threshold concentration and provide information on the safe use of these substances. This information allows customers to make informed decisions about the potential risks associated with using the components and take appropriate measures to mitigate any hazards.Ensuring compliance with REACH SVHC requirements is essential for electronics manufacturers to meet regulatory standards, protect human health and the environment, and maintain transparency in their supply chain. It also demonstrates a commitment to sustainability and responsible manufacturing practices in the electronics industry.
No SVHC - Radiation Hardening
Radiation hardening is the process of making electronic components and circuits resistant to damage or malfunction caused by high levels of ionizing radiation, especially for environments in outer space (especially beyond the low Earth orbit), around nuclear reactors and particle accelerators, or during nuclear accidents or nuclear warfare.
No - RoHS Status
RoHS means “Restriction of Certain Hazardous Substances” in the “Hazardous Substances Directive” in electrical and electronic equipment.
ROHS3 Compliant - Lead Free
Lead Free is a term used to describe electronic components that do not contain lead as part of their composition. Lead is a toxic material that can have harmful effects on human health and the environment, so the electronics industry has been moving towards lead-free components to reduce these risks. Lead-free components are typically made using alternative materials such as silver, copper, and tin. Manufacturers must comply with regulations such as the Restriction of Hazardous Substances (RoHS) directive to ensure that their products are lead-free and environmentally friendly.
Lead Free
BS170 Alternatives
| Part Number | Description | Manufacturer |
| ND2406L-TR1TRANSISTORS | Small Signal Field-Effect Transistor, 0.23A I(D), 240V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-226AA, TO-92, 3 PIN | Vishay Siliconix |
| BSN20BKTRANSISTORS | Small Signal Field-Effect Transistor, 0.265A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB | Nexperia |
| VN1310N3P015TRANSISTORS | Small Signal Field-Effect Transistor, 0.25A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 | Supertex Inc |
| VN1710LP018TRANSISTORS | Small Signal Field-Effect Transistor, 0.22A I(D), 170V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 | Supertex Inc |
| MPF6659TRANSISTORS | 2000mA, 35V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 | Motorola Mobility LLC |
| SST4118T1TRANSISTORS | Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, PLASTIC PACKAGE-3 | Calogic Inc |
| BS208-AMMOTRANSISTORS | TRANSISTOR 200 mA, 200 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92, FET General Purpose Small Signal | NXP Semiconductors |
| SD1106DDTRANSISTORS | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | Topaz Semiconductor |
| BSS7728E6327TRANSISTORS | Small Signal Field-Effect Transistor, 0.15A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 3 PIN | Infineon Technologies AG |
| 2SK1585-T2TRANSISTORS | Small Signal Field-Effect Transistor, 1A I(D), 16V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, POWER, MINI MOLD, SC-62, 3 PIN | NEC Electronics Group |
BS170 Equivalent
-2N7000
-2N7002
-VQ1000J
-VQ1000P
-IRLML2502
Where to use BS170?
BS170 can be used for any general-purpose switching and amplification purposes, it can be used as a switch to drive loads under 500mA which is enough drain current to drive most of the relays, lamps, LEDs, etc. Additionally, it can also be used at the output of microcontrollers and platforms like Arduino and raspberry pi to drive loads.
On the other hand, it can also be used as an audio amplifier, in audio amplifier stages, low-level signal amplification, etc. Wiring the MOSFETs are almost the same as we wire BJT transistors. In MOSFETs, the Gate is used to control the transistor whereas in BJT it is Base, but the BJTs are current control devices and MOSFETs are voltage control devices. And the gate in MOSFETs requires a small amount of voltage to control current through its Drain to Source.
How to use BS170?

In this circuit, we are just turning ON/OFF an LED using BS170 n-channel MOSFET. Here, the Gate and Drain terminal is connected through a 5v DC source, and LED is connected to the Source. As the gate pulse is applied by turning ON the switch, MOSFET conducts current through Drain to Source, and LED starts glowing. LED remains ON until the gate pulse is applied. As the gate pulse is removed LED turns OFF.
BS170 Applications
-Used in Fast Switching
-Used in Switching or driving loads under 500mA
-Used in Audio Amplification & Pre Amplification
-Used in Output of Microcontrollers
-Used in Output of ICS
-Used in Various types of signal amplification
-Used in Electronic Equipment — Industrial Automation (Machine Controls, Light Barriers, Vision Controls)
-Used in Battery operated systems
-Used in Solid-state relays
-Used in Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc.
-Used in Direct Logic-Level Interface: TTL/CMOS
BS170 Package

TO-92(TO-226) Package
BS170 Manufacturer
ON Semiconductor is a semiconductor supplier company. Products include power and signal management, logic, discrete, and custom devices for automotive, communications, computing, consumer, industrial, LED lighting, medical, military/aerospace, and power applications. ON Semiconductor runs a network of manufacturing facilities, sales offices, and design centers in North America, Europe, and the Asia Pacific regions. Its headquarter is in Phoenix, Arizona.
Datasheet PDF
- PCN Obsolescence/ EOL :
- Datasheets :
BS170-ON-Semiconductor-datasheet-86684434.pdf
BS170-Fairchild-Semiconductor-datasheet-78861866.pdf
BS170.....-Fairchild-Semiconductor-datasheet-68602643.pdf
BS170-ON-Semiconductor-datasheet-10979123.pdf
BS170...-Fairchild-Semiconductor-datasheet-8325695.pdf
BS170...-Fairchild-Semiconductor-datasheet-8190284.pdf
BS170-ON-Semiconductor-datasheet-156233.pdf
- PCN Assembly/Origin :
- PCN Packaging :
- Environmental Information :
- ReachStatement :
- PCN Design/Specification :
Parts with Similar Specs
- ImagePart NumberManufacturerMountPackage / CaseDrain to Source Voltage (Vdss)Continuous Drain Current (ID)Current - Continuous Drain (Id) @ 25°CThreshold VoltageRds On MaxGate to Source Voltage (Vgs)Power DissipationPower Dissipation-MaxView Compare
BS170
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
60V
500 mA
500mA (Ta)
2.1 V
5 Ω
20 V
830 mW
830mW (Ta)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
-
400 mA
400mA (Ta)
2.1 V
-
20 V
630 mW
625mW (Ta)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
60V
200 mA
200mA (Ta)
2.1 V
5 Ω
20 V
400 mW
400mW (Ta)
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