2SC2240 Transistor: 2SC2240, Pinout, Equivalents
2SC2240 datasheet pdf and Unclassified product details from Foshan Blue Rocket Elec stock available at Utmel
We will discuss the 2SC2240 transistor today. This post covers the 2SC2240’s pinout, datasheet, equivalent and more detailed information about 2SC2240.
2SC2240 Pinout
2SC2240 Pinout
2SC2240 CAD Model
2SC2240 Symbol
2SC2240 Symbol
2SC2240 Footprint
2SC2240 Footprint
2SC2240 3D Model
2SC2240 3D Model
2SC2240 Overview
The NPN transistor family includes the 2SC2240 bipolar junction transistor.
This component, which comes in a TO-92 package, is primarily used for switching and amplification.
2SC2240 has three layers, with one p-doped layer sandwiched between two n-doped layers. The p-doped layer represents the base side, while the two n-doped layers represent the connector and emitter, respectively.
The base, collector, and emitter terminals are located on this device. The base terminal is used to bias the device, while the collector and emitter terminals collect electrons from the base side and emit electrons into the base terminal.
NPN transistors have two junctions: the collector-base junction and the emitter-base junction.
2SC2240 Equivalent
The equivalents for 2SC2240:
2SC3201
2SC3245A
2SC3200
2SC3245
2SC2459
KTC3200
2SC2240 Working Principle
The transistor's action is controlled by the base. When a voltage is applied to the base terminal, the device is biased, and current flows from the collector to the emitter terminal. Because this is an NPN transistor, current will flow from the collector to the emitter side, whereas current will flow from the emitter to the collector side in the case of a PNP transistor.
The nature of these bipolar devices is not symmetrical. If we swap the emitter and collector pins in this project, the terminals will start working in reverse active mode and stop working in forward active mode. This device lacks symmetry due to the different doping concentrations of these pins.
2SC2240 Safe Operating Guidelines
To ensure safe operation, avoid driving the 2SC2240 transistor to its maximum ratings and instead stay 20% below. Because the maximum collector-emitter voltage is 120V, do not drive a load greater than 96V. Because the maximum collector current is 100mA, do not drive loads greater than 80mA and always store or operate the transistor at temperatures greater than -55 °C and less than +125 °C.
2SC2240 Dimensions
2SC2240 Dimensions
Specifications
- TypeParameter
- Package / Case
refers to the protective housing that encases an electronic component, providing mechanical support, electrical connections, and thermal management.
TO-92 - Current-Collector (Ic) (Max)100mA
- Packaging
Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.
Tape & Reel (TR) - Power - Max
Power - Max is a parameter that specifies the maximum amount of power that an electronic component can handle without being damaged. It is typically measured in watts and indicates the upper limit of power that can be safely supplied to the component. Exceeding the maximum power rating can lead to overheating, malfunction, or permanent damage to the component. It is important to consider the power-max rating when designing circuits or systems to ensure proper operation and longevity of the electronic components.
300mW - Transistor Type
Transistor type refers to the classification of transistors based on their operation and construction. The two primary types are bipolar junction transistors (BJTs) and field-effect transistors (FETs). BJTs use current to control the flow of current, while FETs utilize voltage to control current flow. Each type has its own subtypes, such as NPN and PNP for BJTs, and MOSFETs and JFETs for FETs, impacting their applications and characteristics in electronic circuits.
NPN - Voltage - Collector Emitter Breakdown (Max)
Voltage - Collector Emitter Breakdown (Max) is a parameter that specifies the maximum voltage that can be applied between the collector and emitter terminals of a transistor or other semiconductor device before it breaks down and allows excessive current to flow. This parameter is crucial for ensuring the safe and reliable operation of the component within its specified limits. Exceeding the maximum breakdown voltage can lead to permanent damage or failure of the device. Designers and engineers must carefully consider this parameter when selecting components for their circuits to prevent potential issues and ensure proper functionality.
120V - RoHS Status
RoHS means “Restriction of Certain Hazardous Substances” in the “Hazardous Substances Directive” in electrical and electronic equipment.
RoHS Compliant
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