IRLB8721PBF Power MOSFET: Pinout, Datasheet, and Test Circutis

Contact plating (finish) provides corrosion protection for base metals and optimizes the mechanical and electrical properties of the contact interfaces.

In electronic components, the term "Mount" typically refers to the method or process of physically attaching or fixing a component onto a circuit board or other electronic device. This can involve soldering, adhesive bonding, or other techniques to secure the component in place. The mounting process is crucial for ensuring proper electrical connections and mechanical stability within the electronic system. Different components may have specific mounting requirements based on their size, shape, and function, and manufacturers provide guidelines for proper mounting procedures to ensure optimal performance and reliability of the electronic device.

The "Mounting Type" in electronic components refers to the method used to attach or connect a component to a circuit board or other substrate, such as through-hole, surface-mount, or panel mount.

refers to the protective housing that encases an electronic component, providing mechanical support, electrical connections, and thermal management.

The "Transistor Element Material" parameter in electronic components refers to the material used to construct the transistor within the component. Transistors are semiconductor devices that amplify or switch electronic signals and are a fundamental building block in electronic circuits. The material used for the transistor element can significantly impact the performance and characteristics of the component. Common materials used for transistor elements include silicon, germanium, and gallium arsenide, each with its own unique properties and suitability for different applications. The choice of transistor element material is crucial in designing electronic components to meet specific performance requirements such as speed, power efficiency, and temperature tolerance.

It is the time from when Vgs drops below 90% of the gate drive voltage to when the drain current drops below 90% of the load current. It is the delay before current starts to transition in the load, and depends on Rg. Ciss.

The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

In electronic components, the "Series" refers to a group of products that share similar characteristics, designs, or functionalities, often produced by the same manufacturer. These components within a series typically have common specifications but may vary in terms of voltage, power, or packaging to meet different application needs. The series name helps identify and differentiate between various product lines within a manufacturer's catalog.

Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.

Moisture Sensitivity Level (MSL) is a standardized rating that indicates the susceptibility of electronic components, particularly semiconductors, to moisture-induced damage during storage and the soldering process, defining the allowable exposure time to ambient conditions before they require special handling or baking to prevent failures

Termination in electronic components refers to the practice of matching the impedance of a circuit to prevent signal reflections and ensure maximum power transfer. It involves the use of resistors or other components at the end of transmission lines or connections. Proper termination is crucial in high-frequency applications to maintain signal integrity and reduce noise.

An ECCN (Export Control Classification Number) is an alphanumeric code used by the U.S. Bureau of Industry and Security to identify and categorize electronic components and other dual-use items that may require an export license based on their technical characteristics and potential for military use.

Resistance is a fundamental property of electronic components that measures their opposition to the flow of electric current. It is denoted by the symbol "R" and is measured in ohms (Ω). Resistance is caused by the collisions of electrons with atoms in a material, which generates heat and reduces the flow of current. Components with higher resistance will impede the flow of current more than those with lower resistance. Resistance plays a crucial role in determining the behavior and functionality of electronic circuits, such as limiting current flow, voltage division, and controlling power dissipation.

The distribution of electrons of an atom or molecule (or other physical structure) in atomic or molecular orbitals.

A phase of operation during the operation and maintenance stages of the life cycle of a facility.

the process by which an electronic or electrical device produces heat (energy loss or waste) as an undesirable derivative of its primary action.

Case Connection refers to the method by which an electronic component's case or housing is connected to the electrical circuit. This connection is important for grounding purposes, mechanical stability, and heat dissipation. The case connection can vary depending on the type of component and its intended application. It is crucial to ensure a secure and reliable case connection to maintain the overall performance and safety of the electronic device.

Turn-on delay, td(on), is the time taken to charge the input capacitance of the device before drain current conduction can start.

"FET Type" refers to the type of Field-Effect Transistor (FET) being used in an electronic component. FETs are three-terminal semiconductor devices that can be classified into different types based on their construction and operation. The main types of FETs include Metal-Oxide-Semiconductor FETs (MOSFETs), Junction FETs (JFETs), and Insulated-Gate Bipolar Transistors (IGBTs).Each type of FET has its own unique characteristics and applications. MOSFETs are commonly used in digital circuits due to their high input impedance and low power consumption. JFETs are often used in low-noise amplifiers and switching circuits. IGBTs combine the high input impedance of MOSFETs with the high current-carrying capability of bipolar transistors, making them suitable for high-power applications like motor control and power inverters.When selecting an electronic component, understanding the FET type is crucial as it determines the device's performance and suitability for a specific application. It is important to consider factors such as voltage ratings, current handling capabilities, switching speeds, and power dissipation when choosing the right FET type for a particular circuit design.

In the context of electronic components, the parameter "Transistor Application" refers to the specific purpose or function for which a transistor is designed and used. Transistors are semiconductor devices that can amplify or switch electronic signals and are commonly used in various electronic circuits. The application of a transistor can vary widely depending on its design and characteristics, such as whether it is intended for audio amplification, digital logic, power control, or radio frequency applications. Understanding the transistor application is important for selecting the right type of transistor for a particular circuit or system to ensure optimal performance and functionality.

Rds On (Max) @ Id, Vgs refers to the maximum on-resistance of a MOSFET or similar transistor when it is fully turned on or in the saturation region. It is specified at a given drain current (Id) and gate-source voltage (Vgs). This parameter indicates how much resistance the component will offer when conducting, impacting power loss and efficiency in a circuit. Lower Rds On values are preferred for better performance in switching applications.

The parameter "Vgs(th) (Max) @ Id" in electronic components refers to the maximum gate-source threshold voltage at a specified drain current (Id). This parameter is commonly found in field-effect transistors (FETs) and is used to define the minimum voltage required at the gate terminal to turn on the transistor and allow current to flow from the drain to the source. The maximum value indicates the upper limit of this threshold voltage under specified operating conditions. It is an important parameter for determining the proper biasing and operating conditions of the FET in a circuit to ensure proper functionality and performance.

The parameter "Input Capacitance (Ciss) (Max) @ Vds" in electronic components refers to the maximum input capacitance measured at a specific drain-source voltage (Vds). Input capacitance is a crucial parameter in field-effect transistors (FETs) and power MOSFETs, as it represents the total capacitance at the input terminal of the device. This capacitance affects the device's switching speed and overall performance, as it influences the time required for charging and discharging during operation. Manufacturers provide this parameter to help designers understand the device's input characteristics and make informed decisions when integrating it into a circuit.

Gate Charge (Qg) (Max) @ Vgs refers to the maximum amount of charge that must be supplied to the gate of a MOSFET or similar device to fully turn it on, measured at a specific gate-source voltage (Vgs). This parameter is crucial for understanding the switching characteristics of the device, as it influences the speed at which the gate can charge and discharge. A higher gate charge value often implies slower switching speeds, which can impact the efficiency of high-frequency applications. This parameter is typically specified in nanocoulombs (nC) in the component's datasheet.

In electronics, when describing a voltage or current step function, rise time is the time taken by a signal to change from a specified low value to a specified high value.

Vgs (Max) refers to the maximum gate-source voltage that can be applied to a field-effect transistor (FET) without causing damage to the component. This parameter is crucial in determining the safe operating limits of the FET and helps prevent overvoltage conditions that could lead to device failure. Exceeding the specified Vgs (Max) rating can result in breakdown of the gate oxide layer, leading to permanent damage to the FET. Designers must ensure that the applied gate-source voltage does not exceed the maximum rating to ensure reliable and long-term operation of the electronic component.

Fall Time (Typ) is a parameter used to describe the time it takes for a signal to transition from a high level to a low level in an electronic component, such as a transistor or an integrated circuit. It is typically measured in nanoseconds or microseconds and is an important characteristic that affects the performance of the component in digital circuits. A shorter fall time indicates faster switching speeds and can result in improved overall circuit performance, such as reduced power consumption and increased data transmission rates. Designers often consider the fall time specification when selecting components for their circuits to ensure proper functionality and efficiency.

Continuous Drain Current (ID) is a key parameter in electronic components, particularly in field-effect transistors (FETs) such as MOSFETs. It refers to the maximum current that can flow continuously through the drain terminal of the FET without causing damage to the component. This parameter is crucial for determining the power handling capability of the FET and is specified by the manufacturer in the component's datasheet. Designers must ensure that the actual operating current does not exceed the specified Continuous Drain Current to prevent overheating and potential failure of the component.

The threshold voltage is a critical parameter in electronic components, particularly in field-effect transistors (FETs). It refers to the minimum voltage required at the input terminal of the FET to turn it on and allow current to flow between the source and drain terminals. Below the threshold voltage, the FET remains in the off state, acting as an open switch. Once the threshold voltage is exceeded, the FET enters the on state, conducting current between the source and drain.The threshold voltage is a key factor in determining the operating characteristics of FETs, such as their switching speed and power consumption. It is typically specified by the manufacturer and can vary depending on the specific type of FET and its design. Designers must consider the threshold voltage when selecting FETs for a particular application to ensure proper functionality and performance.

JEDEC-95 Code is a standardized identification system used by the Joint Electron Device Engineering Council to categorize and describe semiconductor devices. This code provides a unique alphanumeric identifier for various memory components, ensuring consistency in documentation and communication across the electronics industry. The format includes information about the type, capacity, and technology of the device, facilitating easier specification and understanding for manufacturers and engineers.

The Gate to Source Voltage (Vgs) is a crucial parameter in electronic components, particularly in field-effect transistors (FETs) such as MOSFETs. It refers to the voltage difference between the gate and source terminals of the FET. This voltage determines the conductivity of the FET and controls the flow of current through the device. By varying the Vgs, the FET can be switched on or off, allowing for precise control of electronic circuits. Understanding and properly managing the Vgs is essential for ensuring the reliable and efficient operation of FET-based circuits.

Drain to Source Breakdown Voltage, often denoted as V(BR) D-S, is a critical parameter in electronic components, particularly in field-effect transistors (FETs) and metal-oxide-semiconductor FETs (MOSFETs). It represents the maximum voltage that can be applied between the drain and source terminals of the device without causing breakdown or permanent damage. Exceeding this voltage can lead to excessive current flow, resulting in thermal failure or destruction of the component. It is essential for ensuring reliable operation in circuit designs where high voltages may be encountered.

The parameter "Pulsed Drain Current-Max (IDM)" in electronic components refers to the maximum current that the device can handle when operated under pulsed conditions. This specification is important for understanding the device's capability to handle short bursts of high current without causing damage. It is typically measured in amperes and is specified for a specific pulse width and duty cycle. Designers use this parameter to ensure that the component can withstand transient current spikes without failing, making it crucial for applications where pulsed operation is common, such as in power electronics and RF circuits.

Dual Supply Voltage refers to an electronic component's requirement for two separate power supply voltages, typically one positive and one negative. This configuration is commonly used in operational amplifiers, analog circuits, and certain digital devices to allow for greater signal handling capabilities and improved performance. The use of dual supply voltages enables the device to process bipolar signals, thereby enhancing its functionality in various applications.

Avalanche Energy Rating (Eas) is a parameter that quantifies the energy handling capability of a semiconductor device, particularly during avalanche breakdown conditions. It indicates the maximum energy that the device can withstand without being damaged when it experiences an avalanche effect. This rating is crucial for applications where devices might be exposed to over-voltage or other conditions that could cause unintended breakdown, ensuring reliability and longevity in operation. The Eas value helps designers select appropriate components for circuits that may encounter transient events.

Recovery time in electronic components refers to the time it takes for a device to return to its normal operating state after being subjected to a specific stimulus or disturbance. This parameter is particularly important in devices such as diodes, transistors, and capacitors, where the recovery time can impact the overall performance and reliability of the component. A shorter recovery time indicates that the component can quickly recover from a transient event, ensuring proper functionality and minimizing any potential disruptions in the circuit. Manufacturers typically provide recovery time specifications to help engineers and designers select components that meet the requirements of their specific applications.

Nominal Vgs refers to the standard or expected gate-source voltage in field-effect transistors (FETs) and other related electronic components. It represents the voltage level at which the transistor operates optimally, ensuring proper switching characteristics and performance. This parameter is crucial for designers to determine the appropriate control signals required for efficient operation of the device in circuits. Variations from the nominal Vgs can affect the performance and reliability of the component.

The parameter "REACH SVHC" in electronic components refers to the compliance with the Registration, Evaluation, Authorization, and Restriction of Chemicals (REACH) regulation regarding Substances of Very High Concern (SVHC). SVHCs are substances that may have serious effects on human health or the environment, and their use is regulated under REACH to ensure their safe handling and minimize their impact.Manufacturers of electronic components need to declare if their products contain any SVHCs above a certain threshold concentration and provide information on the safe use of these substances. This information allows customers to make informed decisions about the potential risks associated with using the components and take appropriate measures to mitigate any hazards.Ensuring compliance with REACH SVHC requirements is essential for electronics manufacturers to meet regulatory standards, protect human health and the environment, and maintain transparency in their supply chain. It also demonstrates a commitment to sustainability and responsible manufacturing practices in the electronics industry.

Radiation hardening is the process of making electronic components and circuits resistant to damage or malfunction caused by high levels of ionizing radiation, especially for environments in outer space (especially beyond the low Earth orbit), around nuclear reactors and particle accelerators, or during nuclear accidents or nuclear warfare.

RoHS means “Restriction of Certain Hazardous Substances” in the “Hazardous Substances Directive” in electrical and electronic equipment.

Lead Free is a term used to describe electronic components that do not contain lead as part of their composition. Lead is a toxic material that can have harmful effects on human health and the environment, so the electronics industry has been moving towards lead-free components to reduce these risks. Lead-free components are typically made using alternative materials such as silver, copper, and tin. Manufacturers must comply with regulations such as the Restriction of Hazardous Substances (RoHS) directive to ensure that their products are lead-free and environmentally friendly.