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MJE13001 BJT NPN switching transistor[Video]

UTMEL

Published: 05 May 2022 | Last Updated: 05 May 2022

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MJE13001

MJE13001

SI SEMICONDUCTORS CO LTD

MJE13001 datasheet pdf and Unclassified product details from SI SEMICONDUCTORS CO LTD stock available at Utmel

Purchase Guide

The MJE13001 is a typical BJT NPN switching transistor found in lamp ballasts and (cheap) phone chargers. This article is going to talk about the features, applications, pinout, and more detailed information about the MJE13001.

This video demonstrates detailed information about MJE13001.

Top 3 electronic projects using 13001 Transistor. full explanation

Overview of MJE13001

Because of its high breakdown voltage and current capacity, the MJE13001 is a typical BJT NPN switching transistor found in lamp ballasts and (cheap) phone chargers. It's available in two versions: SMD SOT-89 and TO-92 THT.


MJE13001 Features

  • 600V collector-emitter breakdown

  • 200mA collector current

  • The current gain of up to 70

  • SOT-89 and TO-92 package

  • Power dissipation 750mW (TO-92), 550mW (SOT-89)


Specifications

SI SEMICONDUCTORS CO LTD MJE13001 technical specifications, attributes, parameters and parts with similar specifications to SI SEMICONDUCTORS CO LTD MJE13001.
  • Type
    Parameter
  • Surface Mount

    having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.

    NO
  • Operating Temperature (Max.)
    150°C
  • Configuration

    The parameter "Configuration" in electronic components refers to the specific arrangement or setup of the components within a circuit or system. It encompasses how individual elements are interconnected and their physical layout. Configuration can affect the functionality, performance, and efficiency of the electronic system, and may influence factors such as signal flow, impedance, and power distribution. Understanding the configuration is essential for design, troubleshooting, and optimizing electronic devices.

    Single
  • Polarity/Channel Type

    In electronic components, the parameter "Polarity/Channel Type" refers to the characteristic that determines the direction of current flow or the type of signal that can be accommodated by the component. For components like diodes and transistors, polarity indicates the direction in which current can flow through the component, such as forward bias or reverse bias for diodes. For components like MOSFETs or JFETs, the channel type refers to whether the component is an N-channel or P-channel device, which determines the type of charge carriers that carry current through the component. Understanding the polarity or channel type of a component is crucial for proper circuit design and ensuring that the component is connected correctly to achieve the desired functionality.

    NPN
  • Power Dissipation-Max (Abs)

    Power Dissipation-Max (Abs) refers to the maximum amount of power that an electronic component can dissipate without undergoing thermal damage or degradation. This value is crucial for ensuring reliable operation, as exceeding it can result in overheating and failure. It is typically specified in watts and serves as a critical parameter for designers to determine proper heat management strategies in circuits. Properly managing the power dissipation is essential for the longevity and performance of electronic devices.

    7W
  • Collector Current-Max (IC)

    The parameter "Collector Current-Max (IC)" in electronic components refers to the maximum amount of current that can safely flow through the collector terminal of a transistor without causing damage to the component. It is an important specification that indicates the upper limit of current that the transistor can handle under normal operating conditions. Exceeding this maximum current rating can lead to overheating and potentially result in the failure of the transistor. Designers must ensure that the collector current does not exceed this specified limit to prevent damage to the component and ensure reliable operation of the circuit.

    0.5A
  • DC Current Gain-Min (hFE)

    The parameter "DC Current Gain-Min (hFE)" in electronic components refers to the minimum value of the DC current gain of a bipolar junction transistor (BJT). It is a measure of how much the transistor amplifies the input current to produce the output current. The hFE value indicates the ratio of the output current to the input current when the transistor is operating in the active region. A higher hFE value signifies a higher current gain and better amplification capabilities of the transistor. It is an important parameter to consider when designing and analyzing transistor circuits for various electronic applications.

    8
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MJE13001 Pinout

MJE13001 Pinout.png

MJE13001 Pinout

MJE13001 Dimension

MJE13001 Dimensions.png

MJE13001 Dimensions

How To Use MJE13001

The MJE13001 is a bipolar NPN transistor with a high collector-emitter breakdown voltage of 600V and a medium emitter current of 200mA. It's ideal for low-power SMPS and light ballasts because of its high breakdown voltage and current carrying capacity. It's also capable of switching high-voltage loads.

Because this is a high-voltage transistor, it differs from a lower-voltage transistor in a few ways. The first is the higher base-emitter voltage, which can reach 1.1V instead of the standard 0.6V. When constructing the drive circuitry, this must be taken into account. When there is no base-emitter bias, the cut-off current is likewise quite large — 200uA. This could cause issues downstream and should be considered. The transistor's storage time is 1.5us, which means it takes at least 1.5us for it to switch off after being turned on. To some extent, this can be minimized by connecting a capacitor in parallel with the base resistor to quickly drain current from the transistor base.


MJE13001 Equivalents

MJE13001 Absolute Rating

PARAMETERSYMBOLRATINGSUNIT
Collector-Emitter VoltageVCEO400V
Collector-Base Voltage VCBO 600V
Emitter Base Voltage VEBO7V
Collector CurrentIC 200mA
Collector Power DissipationSOT-89PC550mW
TO-92750
Junction Temperature TJ+150°C
Storage Temperature TSTG-55 ~ +150°C


MJE13001 Applications

  • Fluorescent lamp

  • Electronic ballast

  • Rectifier circuits


Popularity by Region

Frequently Asked Questions

What is the MJE13001?

The MJE13001 is a typical BJT NPN switching transistor found in lamp ballasts and (cheap) phone chargers. It's available in two versions: SMD SOT-89 and TO-92 THT.

What’s the maximum operating temperature of MJE13001?

150°C.

What’s the maximum Power Dissipation of MJE13001?

7W.

What’s the maximum Collector Current of MJE13001?

0.5A.
MJE13001

SI SEMICONDUCTORS CO LTD

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