BF199 NPN Silicon Transistor, BF199 Datasheet and Equivalents

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Published: 30 March 2022 | Last Updated: 30 March 2022

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BF199_J35Z

BF199_J35Z

ON Semiconductor

RF TRANS NPN 25V 1.1GHZ TO92-3

Purchase Guide

RF TRANS NPN 25V 1.1GHZ TO92-3

BF199 is an NPN silicon planar epitaxial RF transistor packaged inTO-92 Plastic with 4A maximum current. This article is going to explain guide details about BF199 for your reference.

This video demonstrates 3 usable transistors for VHF experiments.

3 usable transistors for VHF experiments: the BF199 NPN Si and the J310 FET and the BF245 FET

What is BF199?

The BF199 is an NPN transistor used in RF  applications such as radio frequency amplifiers and video  IF amplifiers. The transistor's VCEO, or maximum collector to emitter voltage, is 25V. The maximum collector current is 50 milliamperes, the maximum power dissipation is 350 milliwatts, and the maximum Transition frequency is 400 to 1100 millimeters per second.

Some manufacturers  ' transistors have a 550MHz transition frequency, whereas others have 750MHz or 11000MHz.


BF199 Pinout

bf199 pinout.jpg

BF199 Pinout

Pin NoPin Name
1Collector
2Emitter
3Base


BF199 CAD Model

BF199 symbol.jpg

BF199 Symbol

BF199 footprint.jpg

BF199 Footprint

BF199 3d model.jpg

BF199 3D Model

Specifications

ON Semiconductor BF199_J35Z technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor BF199_J35Z.
  • Type
    Parameter
  • Mounting Type

    The "Mounting Type" in electronic components refers to the method used to attach or connect a component to a circuit board or other substrate, such as through-hole, surface-mount, or panel mount.

    Through Hole
  • Package / Case

    refers to the protective housing that encases an electronic component, providing mechanical support, electrical connections, and thermal management.

    TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package

    The parameter "Supplier Device Package" in electronic components refers to the physical packaging or housing of the component as provided by the supplier. It specifies the form factor, dimensions, and layout of the component, which are crucial for compatibility and integration into electronic circuits and systems. The supplier device package information typically includes details such as the package type (e.g., DIP, SOP, QFN), number of pins, pitch, and overall size, allowing engineers and designers to select the appropriate component for their specific application requirements. Understanding the supplier device package is essential for proper component selection, placement, and soldering during the manufacturing process to ensure optimal performance and reliability of the electronic system.

    TO-92-3
  • Current-Collector (Ic) (Max)
    50mA
  • Operating Temperature

    The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

    -55°C~150°C TJ
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Bulk
  • Published
    2002
  • Part Status

    Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.

    Obsolete
  • Moisture Sensitivity Level (MSL)

    Moisture Sensitivity Level (MSL) is a standardized rating that indicates the susceptibility of electronic components, particularly semiconductors, to moisture-induced damage during storage and the soldering process, defining the allowable exposure time to ambient conditions before they require special handling or baking to prevent failures

    1 (Unlimited)
  • Base Part Number

    The "Base Part Number" (BPN) in electronic components serves a similar purpose to the "Base Product Number." It refers to the primary identifier for a component that captures the essential characteristics shared by a group of similar components. The BPN provides a fundamental way to reference a family or series of components without specifying all the variations and specific details.

    BF199
  • Power - Max

    Power - Max is a parameter that specifies the maximum amount of power that an electronic component can handle without being damaged. It is typically measured in watts and indicates the upper limit of power that can be safely supplied to the component. Exceeding the maximum power rating can lead to overheating, malfunction, or permanent damage to the component. It is important to consider the power-max rating when designing circuits or systems to ensure proper operation and longevity of the electronic components.

    350mW
  • Transistor Type

    Transistor type refers to the classification of transistors based on their operation and construction. The two primary types are bipolar junction transistors (BJTs) and field-effect transistors (FETs). BJTs use current to control the flow of current, while FETs utilize voltage to control current flow. Each type has its own subtypes, such as NPN and PNP for BJTs, and MOSFETs and JFETs for FETs, impacting their applications and characteristics in electronic circuits.

    NPN
  • DC Current Gain (hFE) (Min) @ Ic, Vce

    The parameter "DC Current Gain (hFE) (Min) @ Ic, Vce" in electronic components refers to the minimum value of the DC current gain, denoted as hFE, under specific operating conditions of collector current (Ic) and collector-emitter voltage (Vce). The DC current gain hFE represents the ratio of the collector current to the base current in a bipolar junction transistor (BJT), indicating the amplification capability of the transistor. The minimum hFE value at a given Ic and Vce helps determine the transistor's performance and efficiency in amplifying signals within a circuit. Designers use this parameter to ensure proper transistor selection and performance in various electronic applications.

    38 @ 7mA 10V
  • Voltage - Collector Emitter Breakdown (Max)

    Voltage - Collector Emitter Breakdown (Max) is a parameter that specifies the maximum voltage that can be applied between the collector and emitter terminals of a transistor or other semiconductor device before it breaks down and allows excessive current to flow. This parameter is crucial for ensuring the safe and reliable operation of the component within its specified limits. Exceeding the maximum breakdown voltage can lead to permanent damage or failure of the device. Designers and engineers must carefully consider this parameter when selecting components for their circuits to prevent potential issues and ensure proper functionality.

    25V
  • Frequency - Transition

    The parameter "Frequency - Transition" in electronic components refers to the maximum frequency at which a signal transition can occur within the component. It is a crucial specification for digital circuits as it determines the speed at which data can be processed and transmitted. A higher frequency transition allows for faster operation and better performance of the electronic component. It is typically measured in hertz (Hz) or megahertz (MHz) and is specified by the manufacturer to ensure proper functioning of the component within a given frequency range.

    1.1GHz
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BF199 Features

  • Material of Transistor: Si

  • Polarity: NPN 

  • Maximum Collector  Power Dissipation (Pc): 0.25 W

  • Maximum Collector  -Base Voltage  |Vcb|: 40 V

  • Maximum Collector-Emitter Voltage  |Vce|: 20 V

  • Maximum Emitter-Base Voltage  |Veb|: 4 V

  • Maximum Collector  Current |Ic max|: 0.025 A

  • Max. Operating  Junction Temperature  (Tj): 125 °C

  • Transition Frequency (ft): 275 MHz

  • Collector Capacitance (Cc): 0.6 pF

  • Forward Current Transfer Ratio  (hFE), MIN: 38

  • Noise Figure, dB: -


BF199 Applications

  •  FM senders

  •  Audio Amplifier Circuits

  •  FM Receiver Applications

  •  Audio Preamplifier Circuits


BF199 Equivalents

2N9018, C3355, BF197 , BF197-01 , BF197P , BF197PK , BF197PL, BF197PM , BF197PS , BF198 , BC639 , BF200 , BF200B , BF202 , BF203 , BF206 , BF207 , BF208 , BF209

Where and How to use BF199?

The BF199 is an RF transistor that can be utilized in a wide range of RF  applications, including high-frequency radio and television applications, AM oscillators, IF amplifiers, and so on. Aside from that, it can be utilized for audio purposes.

 


BF199 Package Outline

BF199 package dimensions.jpg

 BF199 Package Outline

BF199 Manufacturer

onsemi (formerly ON Semiconductor until August 5, 2021) is an American semiconductor supplier company, formerly in the Fortune 500, but dropping into the Fortune 1000 (ranked 512) in 2020. Products include power and signal management, logic, discrete, and custom devices for automotive, communications, computing, consumer, industrial, LED lighting, medical, military/aerospace and power applications.

Datasheet PDF

Download datasheets and manufacturer documentation for ON Semiconductor BF199_J35Z.
Frequently Asked Questions

What is the maximum collector to emitter voltage of the BF199 transistor?

25V

What is the maximum power dissipation of the BF199 transistor?

350 milliwatts

What is the transition frequency of some transistors?

550MHz

What can be BF199 used for?

BF199 is a semiconductor device used to amplify or switch electronic signals and electrical power. It is composed of semiconductor material usually with at least three terminals for connection to an external circuit.

What is the operating temperature of BF199?

-55°C~150°C TJ
BF199_J35Z

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