IRF540N N-Channel Power MOSFET: Circuits, Equivalent, and IRF540N vs IRF540

The IRF540N is an N-channel power MOSFET in the TO-220AB package. The IRF540N utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

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Footprint

3D Model

• Package Type: TO-220AB

• Transistor Type: N Channel

• Max Drain to Source Voltage: 100 V

• Max Drain to Gate Voltage: 100 V

• Max Gate to Source Voltage: ±20 V

• Max Continuous Drain Current: 45 A (Different manufacturers might have different ratings, for Fairchild Semiconductor it is 33 A)

• Max Power Dissipation: 127 W (For Fairchild Semiconductor it is 120 W)

• Typical Drain to Source On Resistance: 0.032 Ω

• Max Drain to Source On Resistance: 0.065 Ω (For Fairchild Semiconductor it is 0.04 Ω)

• Storage & Operating temperature: -55 to +175 Celsius

• Cutting-Edge Process Technology

• Ultra-Low On-Resistance

• Dynamic dv/dt Rating

• Fast Switching

• Fully Avalanche Rated

• Capable of Being Wave-soldered

IRF540N Unclamped Energy Test Circuit and Waveform

IRF540N Gate Charge Test Circuit and Waveform

IRF540N Switching Time Test Circuit and Waveform

RFP30N06, IRFZ44, 2N3055, IRF3205, IRF1310N, IRF3415, IRF3710, IRF3710Z, IRF3710ZG, IRF8010, IRFB260N, IRFB4110, IRFB4110G, IRFB4115, IRFB4115G, IRFB4127, IRFB4227, IRFB4233, IRFB4310, IRFB4310G, IRFB4310Z, IRFB4310ZG, IRFB4321, IRFB4321G, IRFB4332, IRFB4410, IRFB4410Z, IRFB4410ZG, IRFB4510, IRFB4510G, IRFB4610, IRFB4615, IRFB4710, IRFB52N15D, IRFB5615, IRFB59N10D, IRFB61N15D

Please check the pin configuration before replacing them in your circuit.

The IRF540N is an N-Channel power MOSFET that's best suited for high power DC switching applications, such as in high current SMPS power supplies, compact ferrite inverter circuits, iron core inverter circuits, buck and boost converters, power amplifiers, motor sped controllers, robotics, etc. It can also be used with Arduino and other microcontrollers for logic switching.

As a voltage-controlled device, MOSFET can be turned on/off by supplying the required gate threshold voltage (VGS). The IRF540N is an N-channel MOSFET, so the Drain and Source pins will be left open when there is no voltage applied to the Gate pin. When a voltage is applied to the Gate, the Drain and Source pins will close.

This circuit shows how this MOSFET behaves when there is a Gate voltage (5V) and there is not (0V). Since this is an N-Channel MOSFET, the load to be switched (in this case a motor) should always be connected above the drain pin.

When you turn on a MOSFET by supplying the required voltage to the gate pin, it will remain on unless you supply 0V to the gate. To avoid this problem we should always use a pull-down resistor (R1), here I have used a value of 10k. In applications like controlling the speed of the motor or dimming light, we would use a PWM signal for fast switching, during this scenario the MOSFET's gate capacitance will create a reverse current due to the parasitic effect. To tackle this problem we should use a current limiting capacitor, I have used a value of 470 here.

1. Connect the source to the ground or the negative line of the supply.

2. Connect the drain to the positive terminal of the supply via the load which needs to be operated by the device.

3. Connect the gate, which is the trigger lead of the device, to the trigger point of the circuit. This trigger input should be preferably a +5V supply from a CMOS logic source. If the trigger input is not a logic source make sure the gate is permanently connected to the ground via a high-value resistor.

4. When the device is being used for switching inductive loads like a transformer or a motor, a flyback diode should be connected across the load, with the cathode of the diode connected to the positive side of the load.

5. Because the IRF540N has a built-in avalanche protective diode, there is no need for an external diode. But you can use one if you want to provide extra safety to the device.

The IRF540N and IRF540 are both N-channel MOSFETs. The IRF540 is made with trench technology, with a small wafer area and relatively lower cost. The IRF540N, however, is made with planar technology, with a large wafer area and high current-carrying capability. The IRF540N also has a lower maximum on-resistance which is 0.044 Ω, while the IRF540 is 0.077 Ω.

The difference in some important parameters (Note: different manufacturers might have different parameters):

IRF540: 23 A, 100 V, 0.077 Ohm; IRF540N: 33 A, 100 V, 0.044 Ohm. They both come in the TO-220 package and their pins are the same, the main difference is their current-carrying capability, if you are fine with it, then the two are totally interchangeable.

• Switching high power devices

• Control speed of motors

• LED dimmers or flashers

• High-speed switching applications

• Converters or inverter circuits

• Microcontroller logic switching

IRF540N Package Outline

IRF540N Mechanical Data

Founded in 2003, VBsemi Co., Ltd. is a national high-tech enterprise specializing in the production of high-quality VBsemi MOSFET and other related products. We are a terminal manufacturer serving the mid to high-end market and are committed to providing your company with high-quality MOSFET to make your company a success in today's highly competitive market. VBsemi factory is headquartered in Taiwan China, We take VBsemi brand series products as the core, actively developing our product line, and strictly implements ISO9001 international quality standards.