MJE2955T PNP Transistor: Pinout, Datasheet, Uses
Bipolar Transistors - BJT 10A 60V 125W PNP
The MJE2955T is a silicon Epitaxial-Base PNP transistor in the Jedec TO-220 package. This post will unlock its pinout, datasheet, circuit, equivalent and more details about MJE2955T

How to Make Amplifier Using MJE3055T & MJE2955T
MJE2955T Pinout

MJE2955T Pinout
Pin Number | Pin Name | Description |
1 | Base | Controls the biasing of the transistor |
2 | Collector | Electrons Emitted from Emitter Collected by the Collector |
3 | Emitter | Electrons emitted from the Emitter into the first PN junction |
MJE2955T CAD Model
Symbol

MJE2955T Symbol
Footprint

MJE2955T Footprint
3D Model

MJE2955T 3D Model
MJE2955T Description
The MJE2955T is a general-purpose PNP power transistor with an epitaxial base that is housed in a hermetically sealed metal box. This device is intended for use as a general-purpose switching and amplifier device.
MJE2955T Feature
DC Current Gain is specified to a maximum of 10 amps.
Bandwidth — High Current Gain
Type Designator: MJE2955T Product — fT = 2.0 MHz (Min) @ IC = 500 mAdc
Transistor Material: PNP for Si Polarity
|Veb| Maximum Emitter-Base Voltage: 5 V
MJE2955T Application
Power switching circuits
Amplifier circuits
PWM applications
Regulator circuits
Switch-mode power supply
Signal Amplifiers
MJE2955T Uses
The MJE2955T transistor is a highly adaptable device that can be used in a wide range of applications. It is utilized in high-power situations where high power lodes must be controlled. This transistor's frequency range is fairly limited, which is why it is primarily employed in amplifiers, but it can also be used as a preamplifier for a power amplifier stage in some situations. Because the MJE2955T is a PNP transistor, the collector and emitter will be closed (Forward biased) when the base pin is held at the ground and open (Reverse biased) when the base pin is attached to the ground pin. A PNP transistor differs from an NPN transistor in this regard.

MJE2955T Circuit
As previously stated, the MJE2955T is a PNP transistor that may be utilized in a variety of applications; therefore, we have configured the transistor in a common emitter configuration and are driving a high-power motor as a load. The button will initially be in an open circuit state, with no current flowing through the base. The transistor behaves as an open circuit when there is no base current, and the complete supply voltage V1 does not appear across it.
MJE2955T Equivalent
The equivalent for MJE2955T:
2N5987
2N5988
MJE1291
NTE183
MJE2955T Package

MJE2955T Package
MJE2955T Manufacturer
ON Semiconductor (Nasdaq: ON) is driving energy-efficient innovations, empowering customers to reduce global energy use. The company offers a comprehensive portfolio of energy-efficient power and signal management, logic, discrete and custom solutions to help design engineers solve their unique design challenges in automotive, communications, computing, consumer, industrial, LED lighting, medical, military/aerospace and power supply applications. ON Semiconductor operates a responsive, reliable, world-class supply chain and quality program, and a network of manufacturing facilities, sales offices and design centres in key markets throughout North America, Europe, and the Asia Pacific regions.
Specifications
- TypeParameter
- Lifecycle Status
Lifecycle Status refers to the current stage of an electronic component in its product life cycle, indicating whether it is active, obsolete, or transitioning between these states. An active status means the component is in production and available for purchase. An obsolete status indicates that the component is no longer being manufactured or supported, and manufacturers typically provide a limited time frame for support. Understanding the lifecycle status is crucial for design engineers to ensure continuity and reliability in their projects.
OBSOLETE (Last Updated: 1 week ago) - Mount
In electronic components, the term "Mount" typically refers to the method or process of physically attaching or fixing a component onto a circuit board or other electronic device. This can involve soldering, adhesive bonding, or other techniques to secure the component in place. The mounting process is crucial for ensuring proper electrical connections and mechanical stability within the electronic system. Different components may have specific mounting requirements based on their size, shape, and function, and manufacturers provide guidelines for proper mounting procedures to ensure optimal performance and reliability of the electronic device.
Through Hole - Mounting Type
The "Mounting Type" in electronic components refers to the method used to attach or connect a component to a circuit board or other substrate, such as through-hole, surface-mount, or panel mount.
Through Hole - Package / Case
refers to the protective housing that encases an electronic component, providing mechanical support, electrical connections, and thermal management.
TO-220-3 - Number of Pins3
- Supplier Device Package
The parameter "Supplier Device Package" in electronic components refers to the physical packaging or housing of the component as provided by the supplier. It specifies the form factor, dimensions, and layout of the component, which are crucial for compatibility and integration into electronic circuits and systems. The supplier device package information typically includes details such as the package type (e.g., DIP, SOP, QFN), number of pins, pitch, and overall size, allowing engineers and designers to select the appropriate component for their specific application requirements. Understanding the supplier device package is essential for proper component selection, placement, and soldering during the manufacturing process to ensure optimal performance and reliability of the electronic system.
TO-220AB - Collector-Emitter Breakdown Voltage400V
- Collector-Emitter Saturation Voltage1.1V
- Current-Collector (Ic) (Max)10A
- hFEMin20
- Operating Temperature
The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.
-55°C~150°C TJ - Packaging
Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.
Tube - Published2010
- Part Status
Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.
Obsolete - Moisture Sensitivity Level (MSL)
Moisture Sensitivity Level (MSL) is a standardized rating that indicates the susceptibility of electronic components, particularly semiconductors, to moisture-induced damage during storage and the soldering process, defining the allowable exposure time to ambient conditions before they require special handling or baking to prevent failures
1 (Unlimited) - Max Operating Temperature
The Maximum Operating Temperature is the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.
150°C - Min Operating Temperature
The "Min Operating Temperature" parameter in electronic components refers to the lowest temperature at which the component is designed to operate effectively and reliably. This parameter is crucial for ensuring the proper functioning and longevity of the component, as operating below this temperature may lead to performance issues or even damage. Manufacturers specify the minimum operating temperature to provide guidance to users on the environmental conditions in which the component can safely operate. It is important to adhere to this parameter to prevent malfunctions and ensure the overall reliability of the electronic system.
-55°C - Voltage - Rated DC
Voltage - Rated DC is a parameter that specifies the maximum direct current (DC) voltage that an electronic component can safely handle without being damaged. This rating is crucial for ensuring the proper functioning and longevity of the component in a circuit. Exceeding the rated DC voltage can lead to overheating, breakdown, or even permanent damage to the component. It is important to carefully consider this parameter when designing or selecting components for a circuit to prevent any potential issues related to voltage overload.
-60V - Max Power Dissipation
The maximum power that the MOSFET can dissipate continuously under the specified thermal conditions.
75W - Current Rating
Current rating is the maximum current that a fuse will carry for an indefinite period without too much deterioration of the fuse element.
-10A - Base Part Number
The "Base Part Number" (BPN) in electronic components serves a similar purpose to the "Base Product Number." It refers to the primary identifier for a component that captures the essential characteristics shared by a group of similar components. The BPN provides a fundamental way to reference a family or series of components without specifying all the variations and specific details.
MJE2955 - Polarity
In electronic components, polarity refers to the orientation or direction in which the component must be connected in a circuit to function properly. Components such as diodes, capacitors, and LEDs have polarity markings to indicate which terminal should be connected to the positive or negative side of the circuit. Connecting a component with incorrect polarity can lead to malfunction or damage. It is important to pay attention to polarity markings and follow the manufacturer's instructions to ensure proper operation of electronic components.
PNP - Element Configuration
The distribution of electrons of an atom or molecule (or other physical structure) in atomic or molecular orbitals.
Single - Power - Max
Power - Max is a parameter that specifies the maximum amount of power that an electronic component can handle without being damaged. It is typically measured in watts and indicates the upper limit of power that can be safely supplied to the component. Exceeding the maximum power rating can lead to overheating, malfunction, or permanent damage to the component. It is important to consider the power-max rating when designing circuits or systems to ensure proper operation and longevity of the electronic components.
75W - Gain Bandwidth Product
The gain–bandwidth product (designated as GBWP, GBW, GBP, or GB) for an amplifier is the product of the amplifier's bandwidth and the gain at which the bandwidth is measured.
2MHz - Transistor Type
Transistor type refers to the classification of transistors based on their operation and construction. The two primary types are bipolar junction transistors (BJTs) and field-effect transistors (FETs). BJTs use current to control the flow of current, while FETs utilize voltage to control current flow. Each type has its own subtypes, such as NPN and PNP for BJTs, and MOSFETs and JFETs for FETs, impacting their applications and characteristics in electronic circuits.
PNP - Collector Emitter Voltage (VCEO)
Collector-Emitter Voltage (VCEO) is a key parameter in electronic components, particularly in transistors. It refers to the maximum voltage that can be applied between the collector and emitter terminals of a transistor while the base terminal is open or not conducting. Exceeding this voltage limit can lead to breakdown and potential damage to the transistor. VCEO is crucial for ensuring the safe and reliable operation of the transistor within its specified limits. Designers must carefully consider VCEO when selecting transistors for a circuit to prevent overvoltage conditions that could compromise the performance and longevity of the component.
8V - Max Collector Current
Max Collector Current is a parameter used to specify the maximum amount of current that can safely flow through the collector terminal of a transistor or other electronic component without causing damage. It is typically expressed in units of amperes (A) and is an important consideration when designing circuits to ensure that the component operates within its safe operating limits. Exceeding the specified max collector current can lead to overheating, degradation of performance, or even permanent damage to the component. Designers must carefully consider this parameter when selecting components and designing circuits to ensure reliable and safe operation.
10A - DC Current Gain (hFE) (Min) @ Ic, Vce
The parameter "DC Current Gain (hFE) (Min) @ Ic, Vce" in electronic components refers to the minimum value of the DC current gain, denoted as hFE, under specific operating conditions of collector current (Ic) and collector-emitter voltage (Vce). The DC current gain hFE represents the ratio of the collector current to the base current in a bipolar junction transistor (BJT), indicating the amplification capability of the transistor. The minimum hFE value at a given Ic and Vce helps determine the transistor's performance and efficiency in amplifying signals within a circuit. Designers use this parameter to ensure proper transistor selection and performance in various electronic applications.
20 @ 4A 4V - Current - Collector Cutoff (Max)
The parameter "Current - Collector Cutoff (Max)" refers to the maximum current at which a transistor or other electronic component will cease to conduct current between the collector and emitter terminals. This parameter is important in determining the maximum current that can flow through the component when it is in the cutoff state. Exceeding this maximum cutoff current can lead to malfunction or damage of the component. It is typically specified in the component's datasheet and is crucial for proper circuit design and operation.
700μA - Vce Saturation (Max) @ Ib, Ic
The parameter "Vce Saturation (Max) @ Ib, Ic" in electronic components refers to the maximum voltage drop across the collector-emitter junction when the transistor is in saturation mode. This parameter is specified at a certain base current (Ib) and collector current (Ic) levels. It indicates the minimum voltage required to keep the transistor fully conducting in saturation mode, ensuring that the transistor operates efficiently and does not enter the cutoff region. Designers use this parameter to ensure proper transistor operation and to prevent overheating or damage to the component.
8V @ 3.3A, 10A - Voltage - Collector Emitter Breakdown (Max)
Voltage - Collector Emitter Breakdown (Max) is a parameter that specifies the maximum voltage that can be applied between the collector and emitter terminals of a transistor or other semiconductor device before it breaks down and allows excessive current to flow. This parameter is crucial for ensuring the safe and reliable operation of the component within its specified limits. Exceeding the maximum breakdown voltage can lead to permanent damage or failure of the device. Designers and engineers must carefully consider this parameter when selecting components for their circuits to prevent potential issues and ensure proper functionality.
60V - Max Frequency
Max Frequency refers to the highest frequency at which an electronic component can operate effectively without degradation of performance. It is a critical parameter for devices such as transistors, capacitors, and oscillators, indicating their limitations in speed and response time. Exceeding the max frequency can lead to issues like signal distortion, heat generation, and potential failure of the component. Understanding this parameter is essential for designing circuits to ensure reliable and efficient operation.
2MHz - Max Breakdown Voltage
The "Max Breakdown Voltage" of an electronic component refers to the maximum voltage that the component can withstand across its terminals before it breaks down and allows current to flow uncontrollably. This parameter is crucial in determining the operating limits and safety margins of the component in a circuit. Exceeding the maximum breakdown voltage can lead to permanent damage or failure of the component. It is typically specified by the manufacturer in datasheets to guide engineers and designers in selecting the appropriate components for their applications.
60V - Frequency - Transition
The parameter "Frequency - Transition" in electronic components refers to the maximum frequency at which a signal transition can occur within the component. It is a crucial specification for digital circuits as it determines the speed at which data can be processed and transmitted. A higher frequency transition allows for faster operation and better performance of the electronic component. It is typically measured in hertz (Hz) or megahertz (MHz) and is specified by the manufacturer to ensure proper functioning of the component within a given frequency range.
2MHz - Collector Base Voltage (VCBO)
Collector Base Voltage (VCBO) is the maximum allowable voltage that can be applied between the collector and base terminals of a bipolar junction transistor when the emitter is open. It is a critical parameter that determines the voltage rating of the transistor and helps prevent breakdown in the collector-base junction. Exceeding this voltage can lead to permanent damage or failure of the component.
70V - Emitter Base Voltage (VEBO)
Emitter Base Voltage (VEBO) is a parameter used in electronic components, particularly in transistors. It refers to the maximum voltage that can be applied between the emitter and base terminals of a transistor without causing damage to the device. Exceeding this voltage limit can lead to breakdown of the transistor and potential failure. VEBO is an important specification to consider when designing circuits to ensure the proper operation and reliability of the components. It is typically provided in the datasheet of the transistor and should be carefully observed to prevent any potential damage during operation.
5V - Height9.28mm
- Length10.28mm
- Width4.82mm
- RoHS Status
RoHS means “Restriction of Certain Hazardous Substances” in the “Hazardous Substances Directive” in electrical and electronic equipment.
Non-RoHS Compliant - Lead Free
Lead Free is a term used to describe electronic components that do not contain lead as part of their composition. Lead is a toxic material that can have harmful effects on human health and the environment, so the electronics industry has been moving towards lead-free components to reduce these risks. Lead-free components are typically made using alternative materials such as silver, copper, and tin. Manufacturers must comply with regulations such as the Restriction of Hazardous Substances (RoHS) directive to ensure that their products are lead-free and environmentally friendly.
Contains Lead
Datasheet PDF
- PCN Obsolescence/ EOL :
- ReachStatement :
- Datasheets :
What is the MJE2955T intended for?
General-purpose switching and amplifier device.
In what package is the MJE2955T a silicon PNP transistor?
Jedec TO-220.
What is the complementary NPN type of the MJE2955T?
MJE3055T.
In what situations is the MJE2955T transistor used?
High power situations.
What type of transistor does a PNP transistor differ from?
NPN transistor.
What type of configuration does the MJE2955T have?
A common emitter configuration.
What type of state does the MJE2955T initially have?
Open circuit state.
OPA2134 Audio Operational Amplifiers: Pinout, Datasheet and Replacement17 September 202114452
PMBTA42 Transistor: NPN High-Voltage, SOT23, Datasheet, Pinout14 February 20221401
Atmel SAM D21E / SAM D21G / SAM D21J Microcontrollers: Comprehensive Technical Analysis29 February 2024153
A Comprehensive Guide to LTC7815EUHF#TRPBF DC DC Switching Controller06 March 2024120
AT24C32 Two-Wire Serial EEPROM: Datasheet, Pinout and Address15 October 20213457
LT1014CN Quad Precision Op Amp: Pinout, Equivalent and Datasheet [Video & FAQ]25 April 20222138
KSZ9031RN 4/4 Transceiver Full Ethernet 48-QFN[FAQ]: Datasheet, Features, and Pinout21 March 2022505
2N5484 Transistor: 2N5484 Datasheet, Pinout, Equivalent21 February 20222287
This New Material Promises to Be the Best Semiconductor25 July 2022928
A Decade-Long Investment in ON Semiconductor Corp. Yields Over 1200% Returns18 September 20232651
Introduction to the Types of IoT Sensors21 July 20201438
Basic Introduction to Photocell09 April 202511869
What is a Water Level Indicator?19 February 202125559
How does the CPU Calculate 1+1?12 January 20223982
What is latch?28 March 20255399
Towards an Optoelectronic Chip That Mimics the Human Brain20 April 2022771
ON Semiconductor
In Stock: 33166
United States
China
Canada
Japan
Russia
Germany
United Kingdom
Singapore
Italy
Hong Kong(China)
Taiwan(China)
France
Korea
Mexico
Netherlands
Malaysia
Austria
Spain
Switzerland
Poland
Thailand
Vietnam
India
United Arab Emirates
Afghanistan
Åland Islands
Albania
Algeria
American Samoa
Andorra
Angola
Anguilla
Antigua & Barbuda
Argentina
Armenia
Aruba
Australia
Azerbaijan
Bahamas
Bahrain
Bangladesh
Barbados
Belarus
Belgium
Belize
Benin
Bermuda
Bhutan
Bolivia
Bonaire, Sint Eustatius and Saba
Bosnia & Herzegovina
Botswana
Brazil
British Indian Ocean Territory
British Virgin Islands
Brunei
Bulgaria
Burkina Faso
Burundi
Cabo Verde
Cambodia
Cameroon
Cayman Islands
Central African Republic
Chad
Chile
Christmas Island
Cocos (Keeling) Islands
Colombia
Comoros
Congo
Congo (DRC)
Cook Islands
Costa Rica
Côte d’Ivoire
Croatia
Cuba
Curaçao
Cyprus
Czechia
Denmark
Djibouti
Dominica
Dominican Republic
Ecuador
Egypt
El Salvador
Equatorial Guinea
Eritrea
Estonia
Eswatini
Ethiopia
Falkland Islands
Faroe Islands
Fiji
Finland
French Guiana
French Polynesia
Gabon
Gambia
Georgia
Ghana
Gibraltar
Greece
Greenland
Grenada
Guadeloupe
Guam
Guatemala
Guernsey
Guinea
Guinea-Bissau
Guyana
Haiti
Honduras
Hungary
Iceland
Indonesia
Iran
Iraq
Ireland
Isle of Man
Israel
Jamaica
Jersey
Jordan
Kazakhstan
Kenya
Kiribati
Kosovo
Kuwait
Kyrgyzstan
Laos
Latvia
Lebanon
Lesotho
Liberia
Libya
Liechtenstein
Lithuania
Luxembourg
Macao(China)
Madagascar
Malawi
Maldives
Mali
Malta
Marshall Islands
Martinique
Mauritania
Mauritius
Mayotte
Micronesia
Moldova
Monaco
Mongolia
Montenegro
Montserrat
Morocco
Mozambique
Myanmar
Namibia
Nauru
Nepal
New Caledonia
New Zealand
Nicaragua
Niger
Nigeria
Niue
Norfolk Island
North Korea
North Macedonia
Northern Mariana Islands
Norway
Oman
Pakistan
Palau
Palestinian Authority
Panama
Papua New Guinea
Paraguay
Peru
Philippines
Pitcairn Islands
Portugal
Puerto Rico
Qatar
Réunion
Romania
Rwanda
Samoa
San Marino
São Tomé & Príncipe
Saudi Arabia
Senegal
Serbia
Seychelles
Sierra Leone
Sint Maarten
Slovakia
Slovenia
Solomon Islands
Somalia
South Africa
South Sudan
Sri Lanka
St Helena, Ascension, Tristan da Cunha
St. Barthélemy
St. Kitts & Nevis
St. Lucia
St. Martin
St. Pierre & Miquelon
St. Vincent & Grenadines
Sudan
Suriname
Svalbard & Jan Mayen
Sweden
Syria
Tajikistan
Tanzania
Timor-Leste
Togo
Tokelau
Tonga
Trinidad & Tobago
Tunisia
Turkey
Turkmenistan
Turks & Caicos Islands
Tuvalu
U.S. Outlying Islands
U.S. Virgin Islands
Uganda
Ukraine
Uruguay
Uzbekistan
Vanuatu
Vatican City
Venezuela
Wallis & Futuna
Yemen
Zambia
Zimbabwe













