AO4407A 30V P-Channel MOSFET, 12A 8SOIC and AO4407A Equivalents

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Published: 07 February 2022 | Last Updated: 07 February 2022

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AO4407A

AO4407A

Alpha & Omega Semiconductor Inc.

P-Channel Tape & Reel (TR) 11m Ω @ 12A, 20V ±25V 2600pF @ 15V 39nC @ 10V 30V 8-SOIC (0.154, 3.90mm Width)

Purchase Guide

P-Channel Tape & Reel (TR) 11m Ω @ 12A, 20V ±25V 2600pF @ 15V 39nC @ 10V 30V 8-SOIC (0.154, 3.90mm Width)

AO4407A is a kind of 30V P-Channel MOSFET packaged in SOIC-8 Type. This article is going to explain pinout, equivalents, features, applications, and other details about AO4407A MOSFET.

This video demonstrates how to use N channel MOSFET as a P channel MOSFET.

N&P Channel MOSFET, How to use N channel MOSFET as a P channel MOSFET

What is AO4407A?

AO4407A is a kind of 30V P-ChanneMOSFET  packaged in SOIC-8 Type. The AO4407A uses advanced trench technology to provide excellent RDS (ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM  applications.

AO4407A Pinout

The following is the AO4407A  pinout diagram.

ao4407a pinout.jpg

AO4407A Pinout

AO4407A CAD Model

ao4407a symbol.jpg

AO4407A Symbol


ao4407a footprint.jpg

AO4407A Footprint


ao4407a 3d model.jpg

AO4407A 3D Model




Specifications

Alpha & Omega Semiconductor Inc. AO4407A technical specifications, attributes, parameters and parts with similar specifications to Alpha & Omega Semiconductor Inc. AO4407A.
  • Type
    Parameter
  • Mount

    In electronic components, the term "Mount" typically refers to the method or process of physically attaching or fixing a component onto a circuit board or other electronic device. This can involve soldering, adhesive bonding, or other techniques to secure the component in place. The mounting process is crucial for ensuring proper electrical connections and mechanical stability within the electronic system. Different components may have specific mounting requirements based on their size, shape, and function, and manufacturers provide guidelines for proper mounting procedures to ensure optimal performance and reliability of the electronic device.

    Surface Mount
  • Mounting Type

    The "Mounting Type" in electronic components refers to the method used to attach or connect a component to a circuit board or other substrate, such as through-hole, surface-mount, or panel mount.

    Surface Mount
  • Package / Case

    refers to the protective housing that encases an electronic component, providing mechanical support, electrical connections, and thermal management.

    8-SOIC (0.154, 3.90mm Width)
  • Number of Pins
    8
  • Transistor Element Material

    The "Transistor Element Material" parameter in electronic components refers to the material used to construct the transistor within the component. Transistors are semiconductor devices that amplify or switch electronic signals and are a fundamental building block in electronic circuits. The material used for the transistor element can significantly impact the performance and characteristics of the component. Common materials used for transistor elements include silicon, germanium, and gallium arsenide, each with its own unique properties and suitability for different applications. The choice of transistor element material is crucial in designing electronic components to meet specific performance requirements such as speed, power efficiency, and temperature tolerance.

    SILICON
  • Current - Continuous Drain (Id) @ 25℃
    12A Ta
  • Drive Voltage (Max Rds On, Min Rds On)
    6V 20V
  • Number of Elements
    1
  • Power Dissipation (Max)
    3.1W Ta
  • Operating Temperature

    The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

    -55°C~150°C TJ
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Tape & Reel (TR)
  • Published
    2013
  • Part Status

    Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.

    Not For New Designs
  • Moisture Sensitivity Level (MSL)

    Moisture Sensitivity Level (MSL) is a standardized rating that indicates the susceptibility of electronic components, particularly semiconductors, to moisture-induced damage during storage and the soldering process, defining the allowable exposure time to ambient conditions before they require special handling or baking to prevent failures

    1 (Unlimited)
  • Number of Terminations
    8
  • ECCN Code

    An ECCN (Export Control Classification Number) is an alphanumeric code used by the U.S. Bureau of Industry and Security to identify and categorize electronic components and other dual-use items that may require an export license based on their technical characteristics and potential for military use.

    EAR99
  • Terminal Position

    In electronic components, the term "Terminal Position" refers to the physical location of the connection points on the component where external electrical connections can be made. These connection points, known as terminals, are typically used to attach wires, leads, or other components to the main body of the electronic component. The terminal position is important for ensuring proper connectivity and functionality of the component within a circuit. It is often specified in technical datasheets or component specifications to help designers and engineers understand how to properly integrate the component into their circuit designs.

    DUAL
  • Terminal Form

    Occurring at or forming the end of a series, succession, or the like; closing; concluding.

    GULL WING
  • Pin Count

    a count of all of the component leads (or pins)

    8
  • Configuration

    The parameter "Configuration" in electronic components refers to the specific arrangement or setup of the components within a circuit or system. It encompasses how individual elements are interconnected and their physical layout. Configuration can affect the functionality, performance, and efficiency of the electronic system, and may influence factors such as signal flow, impedance, and power distribution. Understanding the configuration is essential for design, troubleshooting, and optimizing electronic devices.

    SINGLE WITH BUILT-IN DIODE
  • Operating Mode

    A phase of operation during the operation and maintenance stages of the life cycle of a facility.

    ENHANCEMENT MODE
  • Power Dissipation

    the process by which an electronic or electrical device produces heat (energy loss or waste) as an undesirable derivative of its primary action.

    3.1W
  • FET Type

    "FET Type" refers to the type of Field-Effect Transistor (FET) being used in an electronic component. FETs are three-terminal semiconductor devices that can be classified into different types based on their construction and operation. The main types of FETs include Metal-Oxide-Semiconductor FETs (MOSFETs), Junction FETs (JFETs), and Insulated-Gate Bipolar Transistors (IGBTs).Each type of FET has its own unique characteristics and applications. MOSFETs are commonly used in digital circuits due to their high input impedance and low power consumption. JFETs are often used in low-noise amplifiers and switching circuits. IGBTs combine the high input impedance of MOSFETs with the high current-carrying capability of bipolar transistors, making them suitable for high-power applications like motor control and power inverters.When selecting an electronic component, understanding the FET type is crucial as it determines the device's performance and suitability for a specific application. It is important to consider factors such as voltage ratings, current handling capabilities, switching speeds, and power dissipation when choosing the right FET type for a particular circuit design.

    P-Channel
  • Transistor Application

    In the context of electronic components, the parameter "Transistor Application" refers to the specific purpose or function for which a transistor is designed and used. Transistors are semiconductor devices that can amplify or switch electronic signals and are commonly used in various electronic circuits. The application of a transistor can vary widely depending on its design and characteristics, such as whether it is intended for audio amplification, digital logic, power control, or radio frequency applications. Understanding the transistor application is important for selecting the right type of transistor for a particular circuit or system to ensure optimal performance and functionality.

    SWITCHING
  • Rds On (Max) @ Id, Vgs

    Rds On (Max) @ Id, Vgs refers to the maximum on-resistance of a MOSFET or similar transistor when it is fully turned on or in the saturation region. It is specified at a given drain current (Id) and gate-source voltage (Vgs). This parameter indicates how much resistance the component will offer when conducting, impacting power loss and efficiency in a circuit. Lower Rds On values are preferred for better performance in switching applications.

    11m Ω @ 12A, 20V
  • Vgs(th) (Max) @ Id

    The parameter "Vgs(th) (Max) @ Id" in electronic components refers to the maximum gate-source threshold voltage at a specified drain current (Id). This parameter is commonly found in field-effect transistors (FETs) and is used to define the minimum voltage required at the gate terminal to turn on the transistor and allow current to flow from the drain to the source. The maximum value indicates the upper limit of this threshold voltage under specified operating conditions. It is an important parameter for determining the proper biasing and operating conditions of the FET in a circuit to ensure proper functionality and performance.

    3V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds

    The parameter "Input Capacitance (Ciss) (Max) @ Vds" in electronic components refers to the maximum input capacitance measured at a specific drain-source voltage (Vds). Input capacitance is a crucial parameter in field-effect transistors (FETs) and power MOSFETs, as it represents the total capacitance at the input terminal of the device. This capacitance affects the device's switching speed and overall performance, as it influences the time required for charging and discharging during operation. Manufacturers provide this parameter to help designers understand the device's input characteristics and make informed decisions when integrating it into a circuit.

    2600pF @ 15V
  • Gate Charge (Qg) (Max) @ Vgs

    Gate Charge (Qg) (Max) @ Vgs refers to the maximum amount of charge that must be supplied to the gate of a MOSFET or similar device to fully turn it on, measured at a specific gate-source voltage (Vgs). This parameter is crucial for understanding the switching characteristics of the device, as it influences the speed at which the gate can charge and discharge. A higher gate charge value often implies slower switching speeds, which can impact the efficiency of high-frequency applications. This parameter is typically specified in nanocoulombs (nC) in the component's datasheet.

    39nC @ 10V
  • Drain to Source Voltage (Vdss)

    The Drain to Source Voltage (Vdss) is a key parameter in electronic components, particularly in field-effect transistors (FETs) such as MOSFETs. It refers to the maximum voltage that can be applied between the drain and source terminals of the FET without causing damage to the component. Exceeding this voltage limit can lead to breakdown and potentially permanent damage to the device.Vdss is an important specification to consider when designing or selecting components for a circuit, as it determines the operating range and reliability of the FET. It is crucial to ensure that the Vdss rating of the component is higher than the maximum voltage expected in the circuit to prevent failures and ensure proper functionality.In summary, the Drain to Source Voltage (Vdss) is a critical parameter that defines the maximum voltage tolerance of a FET component and plays a significant role in determining the overall performance and reliability of electronic circuits.

    30V
  • Vgs (Max)

    Vgs (Max) refers to the maximum gate-source voltage that can be applied to a field-effect transistor (FET) without causing damage to the component. This parameter is crucial in determining the safe operating limits of the FET and helps prevent overvoltage conditions that could lead to device failure. Exceeding the specified Vgs (Max) rating can result in breakdown of the gate oxide layer, leading to permanent damage to the FET. Designers must ensure that the applied gate-source voltage does not exceed the maximum rating to ensure reliable and long-term operation of the electronic component.

    ±25V
  • Continuous Drain Current (ID)

    Continuous Drain Current (ID) is a key parameter in electronic components, particularly in field-effect transistors (FETs) such as MOSFETs. It refers to the maximum current that can flow continuously through the drain terminal of the FET without causing damage to the component. This parameter is crucial for determining the power handling capability of the FET and is specified by the manufacturer in the component's datasheet. Designers must ensure that the actual operating current does not exceed the specified Continuous Drain Current to prevent overheating and potential failure of the component.

    12A
  • Gate to Source Voltage (Vgs)

    The Gate to Source Voltage (Vgs) is a crucial parameter in electronic components, particularly in field-effect transistors (FETs) such as MOSFETs. It refers to the voltage difference between the gate and source terminals of the FET. This voltage determines the conductivity of the FET and controls the flow of current through the device. By varying the Vgs, the FET can be switched on or off, allowing for precise control of electronic circuits. Understanding and properly managing the Vgs is essential for ensuring the reliable and efficient operation of FET-based circuits.

    25V
  • DS Breakdown Voltage-Min

    The parameter "DS Breakdown Voltage-Min" in electronic components refers to the minimum voltage at which the device will experience a breakdown in its Drain-Source (DS) junction. This voltage represents the point at which the component can no longer effectively regulate or control the flow of current, leading to potential damage or failure. It is an important specification to consider when designing or selecting components for a circuit, as exceeding this breakdown voltage can result in permanent damage to the device. Manufacturers provide this specification to ensure proper usage and to help engineers determine the appropriate operating conditions for the component.

    30V
  • Radiation Hardening

    Radiation hardening is the process of making electronic components and circuits resistant to damage or malfunction caused by high levels of ionizing radiation, especially for environments in outer space (especially beyond the low Earth orbit), around nuclear reactors and particle accelerators, or during nuclear accidents or nuclear warfare.

    No
  • RoHS Status

    RoHS means “Restriction of Certain Hazardous Substances” in the “Hazardous Substances Directive” in electrical and electronic equipment.

    ROHS3 Compliant
  • Lead Free

    Lead Free is a term used to describe electronic components that do not contain lead as part of their composition. Lead is a toxic material that can have harmful effects on human health and the environment, so the electronics industry has been moving towards lead-free components to reduce these risks. Lead-free components are typically made using alternative materials such as silver, copper, and tin. Manufacturers must comply with regulations such as the Restriction of Hazardous Substances (RoHS) directive to ensure that their products are lead-free and environmentally friendly.

    Lead Free
0 Similar Products Remaining

AO4407A Features

  • The following are features of AO4407A MOSFET.

  • Type of TransistorMOSFET 

  • Type of Control Channel: P-Channel 

  • Maximum Power Dissipation (Pd): 3.1 W

  • Maximum Drain-Source Voltage  |Vds|: 30 V

  • Maximum Gate-Source Voltage  |Vgs|: 25 V

  • Maximum Gate-Threshold Voltage  |Vgs(th)|: 3 V

  • Maximum Drain Current |Id|: 12 A

  • Maximum Junction Temperature (Tj): 150 °C

  • Rise Time (tr): 9.4 nS

  • Drain-Source Capacitance (Cd): 370 pF

  • Maximum Drain-Source On-State Resistance (Rds): 0.013 Ohm

  • Package: SO-8


Equivalents for AO4407A

AO4314 , AO4354 , AO4402 , AO4403 , AO4404B , AO4405 , AO4406A , AO4407 , IRF530 , AO4409 , AO4410 , AO4411 , AO4413 , AO4415 , AO4419 , AO4420 , AO4421 

Where to use AO4407A

AO4407A is suitable for use as a load switch or in PWM applications and the following are product details of AO4407A P-Channel MOSFET.

  • VDS = -30V

  • ID = -12A (VGS = -20V)

  • RDS (ON) < 11mΩ (VGS = -20V)

  • RDS (ON) < 13mΩ (VGS = -10V)

  • RDS (ON) < 17mΩ (VGS = -6V)

  • 100% UIS Tested

  • 100% Rg Tested


Parts with Similar Specs

The three parts on the right have similar specifications to Alpha & Omega Semiconductor Inc. & AO4407A.

AO4407A Dimensions

ao4407a dimensions.jpg

AO4407A Dimensions

AO4407A Manufacturer

Alpha and Omega Semiconductor, Inc., or AOS, is a designer, developer, and global supplier of a broad range of power semiconductors, including a wide portfolio of Power MOSFET  and Power IC products. AOS  seeks to differentiate itself by integrating its expertise in device physics, process technology, design, and advanced packaging to optimize product performance and cost, and its product portfolio is designed to meet the ever-increasing power efficiency requirements in high volume applications, including portable computers, flat-panel TVs, battery packs, portable media players and power supplies.

Trend Analysis

Frequently Asked Questions

What is the use of AO4407A?

The AO4407A uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications.

What is the AO4407A suitable for?

Load switch or in PWM applications.

What type of MOSFET is AO4407A packaged in?

SOIC-8 Type

What type of MOSFET is AO4407A?

30V P-Channel MOSFET
AO4407A

Alpha & Omega Semiconductor Inc.

In Stock: 120000

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